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Re-visiting Reservoir Computing architectures optimized by Evolutionary Algorithms
Authors:
Sebastián Basterrech,
Tarun Kumar Sharma
Abstract:
For many years, Evolutionary Algorithms (EAs) have been applied to improve Neural Networks (NNs) architectures. They have been used for solving different problems, such as training the networks (adjusting the weights), designing network topology, optimizing global parameters, and selecting features. Here, we provide a systematic brief survey about applications of the EAs on the specific domain of…
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For many years, Evolutionary Algorithms (EAs) have been applied to improve Neural Networks (NNs) architectures. They have been used for solving different problems, such as training the networks (adjusting the weights), designing network topology, optimizing global parameters, and selecting features. Here, we provide a systematic brief survey about applications of the EAs on the specific domain of the recurrent NNs named Reservoir Computing (RC). At the beginning of the 2000s, the RC paradigm appeared as a good option for employing recurrent NNs without dealing with the inconveniences of the training algorithms. RC models use a nonlinear dynamic system, with fixed recurrent neural network named the \textit{reservoir}, and learning process is restricted to adjusting a linear parametric function. %so the performance of learning is fast and precise. However, an RC model has several hyper-parameters, therefore EAs are helpful tools to figure out optimal RC architectures. We provide an overview of the results on the area, discuss novel advances, and we present our vision regarding the new trends and still open questions.
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Submitted 11 November, 2022;
originally announced November 2022.
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India's first robotic eye for time domain astrophysics: the GROWTH-India telescope
Authors:
Harsh Kumar,
Varun Bhalerao,
G. C. Anupama,
Sudhanshu Barway,
Judhajeet Basu,
Kunal Deshmukh,
Kishalay De,
Anirban Dutta,
Christoffer Fremling,
Hrishikesh Iyer,
Adeem Jassani,
Simran Joharle,
Viraj Karambelkar,
Maitreya Khandagale,
K Adithya Krishna,
Sumeet Kulkarni,
Sujay Mate,
Atharva Patil,
DVS Phanindra,
Subham Samantaray,
Kritti Sharma,
Yashvi Sharma,
Vedant Shenoy,
Avinash Singh,
Shubham Srivastava
, et al. (13 additional authors not shown)
Abstract:
We present the design and performance of the GROWTH-India telescope, a 0.7 m robotic telescope dedicated to time-domain astronomy. The telescope is equipped with a 4k back-illuminated camera giving a 0.82-degree field of view and sensitivity of m_g ~20.5 in 5-min exposures. Custom software handles observatory operations: attaining high on-sky observing efficiencies (>~ 80%) and allowing rapid resp…
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We present the design and performance of the GROWTH-India telescope, a 0.7 m robotic telescope dedicated to time-domain astronomy. The telescope is equipped with a 4k back-illuminated camera giving a 0.82-degree field of view and sensitivity of m_g ~20.5 in 5-min exposures. Custom software handles observatory operations: attaining high on-sky observing efficiencies (>~ 80%) and allowing rapid response to targets of opportunity. The data processing pipelines are capable of performing PSF photometry as well as image subtraction for transient searches. We also present an overview of the GROWTH-India telescope's contributions to the studies of Gamma-ray Bursts, the electromagnetic counterparts to gravitational wave sources, supernovae, novae and solar system objects.
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Submitted 27 June, 2022;
originally announced June 2022.
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Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices
Authors:
Priyabrata Mudi,
Shailesh K. Khamari,
Joydipto Bhattacharya,
Aparna Chakrabarti,
Tarun K. Sharma
Abstract:
GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin relaxation in the satellite X-valley of indirect band gap Al0.63Ga0.37As epitaxial layers through polarization resolved photo-luminescence excitation spectroscopy. Solving the rate equations, steady state electronic distribution in various valleys of AlxGa1-xAs is estimated against continues photo carrier generation…
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GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin relaxation in the satellite X-valley of indirect band gap Al0.63Ga0.37As epitaxial layers through polarization resolved photo-luminescence excitation spectroscopy. Solving the rate equations, steady state electronic distribution in various valleys of AlxGa1-xAs is estimated against continues photo carrier generation and an expression for the degree of circular polarization (DCP) of photoluminescence coming from the adjacent quantum well (QW) is derived. Amalgamating the experimental results with analytical expressions, the X-valley electron spin relaxation time (τ_S^X) is determined to be 2.7 +/- 0.1 ps at 10 K. To crosscheck its validity, theoretical calculations are performed based on Density Functional Theory within the framework of the projector augmented wave method, which support the experimental result quite well. Further, temperature dependence of τ_S^X is studied over 10-80 K range, which is explained by considering the intra-valley scattering of carriers in the X-valley of indirect band gap AlGaAs barrier layer. It is learnt that the strain induced modification of band structure lifts the degeneracy in X-valley, which dominates the electron spin relaxation beyond 50 K. Furthermore, the DCP spectra of hot electrons in indirect band gap AlGaAs layers is found to be significantly different compared to that of direct bandgap AlGaAs. It is understood as a consequence of linear k dependent Dresselhaus spin splitting and faster energy relaxation procedure in the X-valley. Findings of this work could provide a new horizon for the realization of next generation spin-photonic devices which are less sensitive to Joule heating.
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Submitted 14 July, 2021;
originally announced July 2021.
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Filtering Noise in Time and Frequency Domain for Ultrafast Pump-Probe Performed Using Low Repetition Rate Lasers
Authors:
Durga Prasad Khatua,
Sabina Gurung,
Asha Singh,
Salahuddin Khan,
Tarun Kumar Sharma,
J. Jayabalan
Abstract:
Optical pump-probe spectroscopy is a powerful tool to directly probe the carrier dynamics in materials down to sub-femtosecond resolution. To perform such measurement, while kee** the pump induced perturbation to the sample as small as possible, it is essential to have a detection scheme with high signal to noise ratio. Achieving such high signal to noise ratio is easy with phase sensitive detec…
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Optical pump-probe spectroscopy is a powerful tool to directly probe the carrier dynamics in materials down to sub-femtosecond resolution. To perform such measurement, while kee** the pump induced perturbation to the sample as small as possible, it is essential to have a detection scheme with high signal to noise ratio. Achieving such high signal to noise ratio is easy with phase sensitive detection based on lock-in-amplifier when a high repetition rate laser is used as the optical pulse source. However such a lock-in-amplifier based method does not work well when a low repetition rate laser is used for the measurement. In this article, a sensitive detection scheme which combines the advantages of boxcar which rejects noise in time domain and lock-in-amplifier which isolates signal in frequency domain for performing pump-probe measurements using low-repetition rate laser system is proposed and experimentally demonstrated. A theoretical model to explain the process of signal detection and a method to reduce the pulse to pulse energy fluctuation in probe pulses is presented. By performing pump-probe measurements at various detection conditions the optimum condition required for obtaining transient absorption signal with low noise is presented. The reported technique is not limited to pump-probe measurements and can be easily modified to suite for other sensitive measurements at low-repetition rates.
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Submitted 8 September, 2020;
originally announced September 2020.
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Fabrication of plasmonic surface relief gratings for the application of band-pass filter in UV-Visible spectral range
Authors:
Sudheer,
S. Porwal,
S. Bhartiya,
C. Mukherjee,
P. Tiwari,
T. K. Sharma,
V. N. Rai,
A. K. Srivastava
Abstract:
The measured experimental results of optical diffraction of 10, 5 and 3.4 micrometer period plasmonic surface relief grating are presented for the application of band-pass filter in visible spectral range. Conventional scanning electron microscopic (SEM) is used to fabricate the grating structures on the silver halide based film (substrate) by exposing the electron beam in raster scan fashion. Mor…
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The measured experimental results of optical diffraction of 10, 5 and 3.4 micrometer period plasmonic surface relief grating are presented for the application of band-pass filter in visible spectral range. Conventional scanning electron microscopic (SEM) is used to fabricate the grating structures on the silver halide based film (substrate) by exposing the electron beam in raster scan fashion. Morphological characterization of the gratings is performed by atomic force microscopy (AFM) shows that the period, height and profile depends on the line per frame, beam spot, single line dwell time, beam current, and accelerating voltage of the electron beam. Optical transmission spectra of 10 micrometer period grating shows a well-defined localized surface plasmon resonance (LSPR) dip at ~366 nm wavelength corresponding to gelatin embedded silver nanoparticles of the grating structure. As the period of the grating reduces LSPR dip becomes prominent. The maximum first order diffraction efficiency (DE) and bandwidth for 10 micrometer period grating are observed as 4% and 400 nm in 350 nm to 800 nm wavelength range respectively. The DE and bandwidth are reduced up to 0.03% and 100 nm for 3.4 micrometer period grating. The profile of DE is significantly flat within the diffraction bandwidth for each of the gratings. An assessment of the particular role of LSPR absorption and varied grating period in the development of the profile of first order DE v/s wavelength are studied. Fabrication of such nano-scale structures in a large area using conventional SEM and silver halide based films may provide the simple and efficient technique for various optical devices applications.
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Submitted 4 July, 2017;
originally announced August 2017.
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Development of high power quantum well lasers at RRCAT
Authors:
T. K. Sharma,
Tapas Ganguli,
V. K. Dixit,
S. D. Singh,
S. Pal,
S. Porwal,
Ravi Kumar,
Alexander Khakha,
R. Jangir,
V. Kheraj,
P. Rawat,
A. K. Nath
Abstract:
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and do** values. For example, a laser diode operating at 0.8 micron has either GaAs or GaAsP quantum well as an active layer. The quantum well is sandwiched between AlGaAs wider band…
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We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and do** values. For example, a laser diode operating at 0.8 micron has either GaAs or GaAsP quantum well as an active layer. The quantum well is sandwiched between AlGaAs wider bandgap waveguide and cladding layers. The complete laser structure is grown by metal organic vapour phase epitaxy technique and devices are fabricated through standard procedure using photolithography. We recently achieved about 5.3 Watt peak power at 853 nm. These laser diodes were tested under pulsed operation at room temperature for 500 nanosecond pulse duration with a duty cycle of 1:1000. Laser diode arrays consisting of 6-10 elements were also developed and tested for operation in pulsed mode at room temperature.
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Submitted 4 December, 2014;
originally announced December 2014.
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Effect of Strain disorder on the magnetic glassy state in La5/8-yPryCa3/8MnO3 (y = 0.45) thin films
Authors:
Dileep K. Mishra,
V. G. Sathe,
R. Rawat,
V. Ganesan,
Ravi Kumar,
T. K. Sharma
Abstract:
Present study reveals that the free energy landscape of the La5/8-yPryCa3/8MnO3 (LPCMO) system could be modified by elastic strain interaction in the epitaxial thin films. Epitaxial LPCMO thin films of various thicknesses are grown on LaAlO3 substrate by pulsed laser deposition. With increasing thickness, by virtue of island growth morphology, strain disorder is invoked in thin films during strain…
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Present study reveals that the free energy landscape of the La5/8-yPryCa3/8MnO3 (LPCMO) system could be modified by elastic strain interaction in the epitaxial thin films. Epitaxial LPCMO thin films of various thicknesses are grown on LaAlO3 substrate by pulsed laser deposition. With increasing thickness, by virtue of island growth morphology, strain disorder is invoked in thin films during strain relaxation process. The length-scale of phase separation is found to be highly correlated with strain disorder. Magneto-transport measurements demonstrate that coherent strain stabilizes charge ordered insulating phase while strain disorder stabilizes metallic phase. Resistivity under cooling and heating in unequal field (CHUF) protocol exhibits lower value of freezing temperature for strain disordered films compared to bulk system. Raman spectroscopy reveals that the charge ordered insulating and ferromagnetic metallic phases are structurally dissimilar and possess monoclinic and rhombohedral like symmetries respectively. Interfaces between two phases strongly influence low temperature glassy metastable state resulting in different phase separation states in the LPCMO thin films.
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Submitted 24 September, 2013;
originally announced September 2013.
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Modification in structural, dielectric and magnetic properties of La and Nd co-substituted epitaxial BiFeO3 thin films
Authors:
Anju Ahlawat,
S. Satapathy,
V. G. Sathe,
R. J. Choudhary,
M. K. Singh,
Ravi Kumar,
T. K. Sharma,
P. K. Gupta
Abstract:
The influence of La and Nd co-substitution on the structural and magnetic properties of BiFeO3 (BFO) thin films was examined. Epitaxial thin films of pure and, La and Nd co-doped BFO on the SrRuO3 buffered single crystal SrTiO3 (001) substrate were deposited using pulsed laser deposition. The structural change in co doped La and Nd BFO thin films which was caused by the changes of force constant i…
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The influence of La and Nd co-substitution on the structural and magnetic properties of BiFeO3 (BFO) thin films was examined. Epitaxial thin films of pure and, La and Nd co-doped BFO on the SrRuO3 buffered single crystal SrTiO3 (001) substrate were deposited using pulsed laser deposition. The structural change in co doped La and Nd BFO thin films which was caused by the changes of force constant in the crystal lattice induced by ionic radii mismatch was investigated. Raman spectroscopy studies manifest the structural change in doped BFO films from rhombohedral to monoclinic distorted phase which is induced by the co substitution of La and Nd. Room temperature magnetic hysteresis curves indicated that saturation magnetization is enhanced in the doped film with saturation magnetization of ~20 emu/cm3. The dielectric and magnetic properties are effectively improved in BLNFO films compared to pure BFO thin films.
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Submitted 18 June, 2013;
originally announced June 2013.
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Adaptive Bee Colony in an Artificial Bee Colony for Solving Engineering Design Problems
Authors:
Tarun Kumar Sharma,
Millie Pant,
V. P. Singh
Abstract:
A wide range of engineering design problems have been solved by the algorithms that simulates collective intelligence in swarms of birds or insects. The Artificial Bee Colony or ABC is one of the recent additions to the class of swarm intelligence based algorithms that mimics the foraging behavior of honey bees. ABC consists of three groups of bees namely employed, onlooker and scout bees. In ABC,…
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A wide range of engineering design problems have been solved by the algorithms that simulates collective intelligence in swarms of birds or insects. The Artificial Bee Colony or ABC is one of the recent additions to the class of swarm intelligence based algorithms that mimics the foraging behavior of honey bees. ABC consists of three groups of bees namely employed, onlooker and scout bees. In ABC, the food locations represent the potential candidate solution. In the present study an attempt is made to generate the population of food sources (Colony Size) adaptively and the variant is named as A-ABC. A-ABC is further enhanced to improve convergence speed and exploitation capability, by employing the concept of elitism, which guides the bees towards the best food source. This enhanced variant is called E-ABC. The proposed algorithms are validated on a set of standard benchmark problems with varying dimensions taken from literature and on five engineering design problems. The numerical results are compared with the basic ABC and three recent variant of ABC. Numerically and statistically simulated results illustrate that the proposed method is very efficient and competitive.
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Submitted 22 October, 2012;
originally announced November 2012.
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Improved Local Search in Artificial Bee Colony using Golden Section Search
Authors:
Tarun Kumar Sharma,
Millie Pant,
V. P. Singh
Abstract:
Artificial bee colony (ABC), an optimization algorithm is a recent addition to the family of population based search algorithm. ABC has taken its inspiration from the collective intelligent foraging behavior of honey bees. In this study we have incorporated golden section search mechanism in the structure of basic ABC to improve the global convergence and prevent to stick on a local solution. The…
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Artificial bee colony (ABC), an optimization algorithm is a recent addition to the family of population based search algorithm. ABC has taken its inspiration from the collective intelligent foraging behavior of honey bees. In this study we have incorporated golden section search mechanism in the structure of basic ABC to improve the global convergence and prevent to stick on a local solution. The proposed variant is termed as ILS-ABC. Comparative numerical results with the state-of-art algorithms show the performance of the proposal when applied to the set of unconstrained engineering design problems. The simulated results show that the proposed variant can be successfully applied to solve real life problems.
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Submitted 23 October, 2012;
originally announced October 2012.
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Origin of Periodic Modulations in the Transient Reflectivity Signal at Cryogenic Temperatures
Authors:
Salahuddin Khan,
Rama Chari,
J. Jayabalan,
Suparna Pal,
T. K. Sharma,
A. K. Sagar,
M. S. Ansari,
P. K. Kush
Abstract:
Periodic modulations that appear in the low-temperature transient reflectivity signal of a GaAsP/AlGaAs single quantum well is studied. Similar anomalous oscillations are also observed in layered manganite [K. Kouyama et.al. J. Phys. Soc. Jpn. 76:123702(1-3), 2007]. We show that such periodic modulations are caused by changes in the linear reflectivity of the sample during transient reflectivity m…
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Periodic modulations that appear in the low-temperature transient reflectivity signal of a GaAsP/AlGaAs single quantum well is studied. Similar anomalous oscillations are also observed in layered manganite [K. Kouyama et.al. J. Phys. Soc. Jpn. 76:123702(1-3), 2007]. We show that such periodic modulations are caused by changes in the linear reflectivity of the sample during transient reflectivity measurements. Studied carried out on reflectivity of different materials under identical conditions shows that these modulations on the true transient reflectivity signal are caused by condensation of residual gases on the surface of quantum well. Methods to obtain reliable transient reflectivity data are also described.
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Submitted 28 August, 2012;
originally announced August 2012.
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Strain-driven light polarization switching in deep ultraviolet nitride emitters
Authors:
T. K. Sharma,
Doron Naveh,
E. Towe
Abstract:
Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition…
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Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition than expected. This happens even in the presence of large and negative crystal field splitting energy for AlxGa1-xN layers. A judicious magnitude of the compressive strain can support vertical light emission (out of the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is desirable for the development of deep ultraviolet light-emitting diodes designed to operate below 250nm with transverse electric polarization characteristics.
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Submitted 9 January, 2011;
originally announced January 2011.
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Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling
Authors:
Shouvik Datta,
M. R. Gokhle,
A. P. Shah,
T. K. Sharma,
B. M. Arora
Abstract:
It is known in the literature that InGaP alloy synthesized within a certain range of growth temperature (520 - 720 degree Centrigrade) shows Cu-Pt crystal ordering. This ordering reduces the band gap energy . It was predicted that the ordering induced modification of energy levels of InGaP lowers its conduction band edge, which could change a type I band alignment at a GaAs/InGaP heterojunction…
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It is known in the literature that InGaP alloy synthesized within a certain range of growth temperature (520 - 720 degree Centrigrade) shows Cu-Pt crystal ordering. This ordering reduces the band gap energy . It was predicted that the ordering induced modification of energy levels of InGaP lowers its conduction band edge, which could change a type I band alignment at a GaAs/InGaP heterojunction to type II . Here we report the first observation of this ordering related type I/II transition for a GaAs/InGaP heterojunction by C-V profiling experiments done at room temperature .
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Submitted 6 March, 1999;
originally announced March 1999.
