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Imaging Local Effects of Voltage and Boron Do** on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices
Authors:
Adam Erickson,
Syed Qamar Abbas Shah,
Ather Mahmood,
Pratyush Buragohain,
Ilja Fescenko,
Alexei Gruverman,
Christian Binek,
Abdelghani Laraoui
Abstract:
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) do** of Cr2O3 films led to an increase TN > 400 K and allowed the realization of vo…
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Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) do** of Cr2O3 films led to an increase TN > 400 K and allowed the realization of voltage magnetic-field free controlled Néel vector rotation. Here, we directly image the impact of B do** on the formation of AFM domains in Cr2O3 thin films and elucidate the mechanism of voltage-controlled manipulation of the spin structure using nitrogen vacancy (NV) scanning probe magnetometry. We find a stark reduction and thickness dependence of domain size in B-doped Cr2O3 (B:Cr2O3) films, explained by the increased germ density, likely associated with the B do**. By reconstructing the surface magnetization from the NV stray-field maps, we find a qualitative distinction between the undoped and B-doped Cr2O3 films, manifested by the histogram distribution of the AFM ordering, i.e., 180 degree domains for pure films, and 90 degree domains for B:Cr2O3 films. Additionally, NV imaging of voltage-controlled B-doped Cr2O3 devices corroborate the 90 degeree rotation of the AFM domains observed in magnetotransport measurement.
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Submitted 17 May, 2024;
originally announced May 2024.
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Post deposition interfacial Néel temperature tuning in magnetoelectric B:Cr2O3
Authors:
Ather Mahmood,
Jamie Weaver,
Syed Qamar Abbas Shah,
Will Echtenkamp,
Jeffrey W. Lynn,
Peter A. Dowben,
Christian Binek
Abstract:
Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven π/2 rotation of the Néel vector. Nonvolatile, voltage-controlled Néel vector rotation is a much-desired material property in the context of antiferromagnetic spintronics enabling ultra-low power, ultra-fast, nonvolatile memory, and logic device ap…
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Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven π/2 rotation of the Néel vector. Nonvolatile, voltage-controlled Néel vector rotation is a much-desired material property in the context of antiferromagnetic spintronics enabling ultra-low power, ultra-fast, nonvolatile memory, and logic device applications. Néel vector rotation is detected with the help of heavy metal (Pt) Hall-bars in proximity of pulsed laser deposited B:Cr2O3 films. To facilitate operation of B:Cr2O3-based devices in CMOS environments, the Néel temperature, TN, of the functional film must be tunable to values significantly above room temperature. Cold neutron depth profiling and x-ray photoemission spectroscopy depth profiling reveal thermally activated B-accumulation at the B:Cr2O3/ vacuum interface in thin films deposited on Al2O3 substrates. We attribute the B-enrichment to surface segregation. Magnetotransport data confirm B-accumulation at the interface within a layer of about 50 nm thick where the device properties reside. Here TN enhances from 334 K prior to annealing, to 477 K after annealing for several hours. Scaling analysis determines TN as a function of the annealing temperature. Stability of post-annealing device properties is evident from reproducible Néel vector rotation at 370 K performed over the course of weeks.
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Submitted 21 September, 2023;
originally announced September 2023.
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Search for magnetoelectric monopole response in Cr$_2$O$_3$ powder
Authors:
Syed Q. A. Shah,
Ather Mahmood,
Arun Parthasarathy,
Christian Binek
Abstract:
Powder samples have been suggested as a pathway to fabricate isotropic magnetoelectric (ME) materials which effectively only have a pseudoscalar or monopole ME response. We demonstrate that random distribution of ME grains alone does not warrant isotropic ME response because the activation of a non-vanishing ME response requires a ME field cooling protocol which tends to induce preferred axes. We…
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Powder samples have been suggested as a pathway to fabricate isotropic magnetoelectric (ME) materials which effectively only have a pseudoscalar or monopole ME response. We demonstrate that random distribution of ME grains alone does not warrant isotropic ME response because the activation of a non-vanishing ME response requires a ME field cooling protocol which tends to induce preferred axes. We investigate the evolution of ME susceptibility in powder chromia samples for various ME field cooling protocols both theoretically and experimentally. In particular, we work out the theoretical expressions for ME susceptibility for powder Chromia in the framework of statistical mechanics where Boltzmann factors weigh the orientation of the Néel vector relative to the local orientation of the c-axis of a grain. Previous approximations oversimplified the thermodynamic nature of the annealing process giving rise to misleading conclusions on the role of the magnitude of the applied product of electric and magnetic fields on the ME response. In accordance with our refined theory, a strong dependence of the functional form of $α$ vs. $T$ of Chromia powders on the ME field cooling protocol is observed. It shows that Chromia powder is not generically an isotropic ME effective medium but provides a pathway to realize the elusive isotropic ME response.
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Submitted 30 May, 2023;
originally announced May 2023.
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Nanoscale imaging of antiferromagnetic domains in epitaxial films of Cr2O3 via scanning diamond magnetic probe microscopy
Authors:
Adam Erickson,
Syed Qamar Abbas Shah,
Ather Mahmood,
Ilja Fescenko,
Rupak Timalsina,
Christian Binek,
Abdelghani Laraoui
Abstract:
We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr2O3 thin films using diamond nitrogen vacancy microscopy. We found a correlation between magnetic domain size and structural grain size which we associate with the domain formation process. We performed field cooling, i.e., cooling from above to below the Néel temperature in…
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We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr2O3 thin films using diamond nitrogen vacancy microscopy. We found a correlation between magnetic domain size and structural grain size which we associate with the domain formation process. We performed field cooling, i.e., cooling from above to below the Néel temperature in the presence of magnetic field, which resulted in the selection of one of the two otherwise degenerate 180 degree domains. Lifting of such a degeneracy is achievable with a magnetic field alone due to the Zeeman energy of a weak parasitic magnetic moment in Cr2O3 films that originates from defects and the imbalance of the boundary magnetization of opposing interfaces. This boundary magnetization couples to the antiferromagnetic order parameter enabling selection of its orientation. Nanostructuring the Cr2O3 film with mesa structures revealed reversible edge magnetic states with the direction of magnetic field during field cooling.
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Submitted 6 January, 2023; v1 submitted 15 September, 2022;
originally announced September 2022.
