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High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
A. Elbaroudy,
A. W. M. Jordan,
F. Thompson,
George Nichols,
Y. Shi,
Man Chun Tam,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$Å are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $μ$V and critical current densities up to 9.6 $μ$A/$μ$m, among the largest values reported for Nb-InAs SNS devices.
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Submitted 22 May, 2024;
originally announced May 2024.
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Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
Authors:
A. Elbaroudy,
B. Khromets,
F. Sfigakis,
E. Bergeron,
Y. Shi,
M. C. A. Tam,
T. Blaikie,
George Nichols,
J. Baugh,
Z. R. Wasilewski
Abstract:
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a th…
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Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.
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Submitted 19 April, 2024; v1 submitted 27 January, 2024;
originally announced January 2024.
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Stable electroluminescence in ambipolar dopant-free lateral p-n junctions
Authors:
Lin Tian,
Francois Sfigakis,
Arjun Shetty,
Ho-Sung Kim,
Nachiket Sherlekar,
Sara Hosseini,
Man Chun Tam,
Brad van Kasteren,
Brandon Buonacorsi,
Zach Merino,
Stephen R. Harrigan,
Zbigniew Wasilewski,
Jonathan Baugh,
Michael E. Reimer
Abstract:
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppr…
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Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.
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Submitted 15 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
Y. Shi,
George Nichols,
P. C. Klipstein,
A. Elbaroudy,
Sean M. Walker,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are obser…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=1$ in magnetic fields of up to $B=18$ T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4$\times 10^{11}$ cm$^{-2}$, and peak mobilities exceed 24,000 cm$^2$/Vs. Large Rashba spin-orbit coefficients up to 110 meV$\cdot$Å are obtained through weak anti-localization measurements. An effective mass of 0.019$m_e$ is determined from temperature-dependent magnetoresistance measurements, and a g-factor of 41 at a density of 3.6$\times 10^{11}$ cm$^{-2}$ is obtained from coincidence measurements in tilted magnetic fields. By comparing two heterostructures with and without a delta-doped layer beneath the quantum well, we find that the carrier density is stable with time when do** in the ternary Al$_{0.1}$In$_{0.9}$Sb barrier is not present. Finally, the effect of modulation do** on structural asymmetry between the two heterostructures is characterized.
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Submitted 7 January, 2023; v1 submitted 16 September, 2022;
originally announced September 2022.
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Temperature dependent angular dispersions of surface acoustic waves on GaAs
Authors:
Mats Powlowski,
Francois Sfigakis,
Na Young Kim
Abstract:
We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We design and fabricate sets of interdigital transducers (IDTs) to induce 4 μm SAWs via the inverse piezoelectric (PZE) effect between the PZE [110] direction (set as θ = 0°) and the non-PZE [100] direction (θ = 45°) on GaAs.…
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We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We design and fabricate sets of interdigital transducers (IDTs) to induce 4 μm SAWs via the inverse piezoelectric (PZE) effect between the PZE [110] direction (set as θ = 0°) and the non-PZE [100] direction (θ = 45°) on GaAs. We also prepare ZnO film sputtered GaAs substrates in order to launch SAWs efficiently by IDTs even in the non-PZE direction. We quantify acoustic velocities between 1.4 and 300 K from the resonant frequencies in the S11 parameter using a network analyzer. We observe parabolic velocity-temperature trends at all θ-values both on GaAs and ZnO/GaAs substrates. Below 200 K, in ZnO/GaAs substrates slower SAW modes appear around the [110] direction, which are unseen at RT.
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Submitted 1 May, 2021;
originally announced May 2021.
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Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
Authors:
B. Buonacorsi,
F. Sfigakis,
A. Shetty,
M. C. Tam,
H. S. Kim,
S. R. Harrigan,
F. Hohls,
M. E. Reimer,
Z. R. Wasilewski,
J. Baugh
Abstract:
We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance consideri…
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We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pum** in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.
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Submitted 16 September, 2021; v1 submitted 26 February, 2021;
originally announced February 2021.
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Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
Authors:
A. Shetty,
F. Sfigakis,
W. Y. Mak,
K. Das Gupta,
B. Buonacorsi,
M. C. Tam,
H. S. Kim,
I. Farrer,
A. F. Croxall,
H. E. Beere,
A. R. Hamilton,
M. Pepper,
D. G. Austing,
S. A. Studenikin,
A. Sachrajda,
M. E. Reimer,
Z. R. Wasilewski,
D. A. Ritchie,
J. Baugh
Abstract:
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i…
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Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.
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Submitted 21 December, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
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Orientation of hole quantum Hall nematic phases in an out-of-plane electric field
Authors:
A. F. Croxall,
F. Sfigakis,
J. Waldie,
I. Farrer,
D. A. Ritchie
Abstract:
We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$,…
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We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$, and hence the symmetry of the confining potential. For $p\approx2\times10^{11}$~cm$^{-2}$ and $E_\perp \approx -2 \times10^{5}$~V/m, the magnetoresistance along $\langle01\bar1\rangle$ greatly exceeds that along $\langle011\rangle$, suggesting the formation of a quantum Hall nematic or `stripe' phase. Reversing the sign of $E_\perp$ rotates the stripes by $90^{\circ}$. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects.
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Submitted 14 May, 2019; v1 submitted 7 March, 2019;
originally announced March 2019.
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Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides
Authors:
Hyun Ho Kim,
Bowen Yang,
Siwen Li,
Shengwei Jiang,
Chenhao **,
Zui Tao,
George Nichols,
Francois Sfigakis,
Shazhou Zhong,
Chenghe Li,
Shangjie Tian,
David G. Cory,
Guo-Xing Miao,
Jie Shan,
Kin Fai Mak,
Hechang Lei,
Kai Sun,
Liuyan Zhao,
Adam W. Tsen
Abstract:
We conduct a comprehensive study of three different magnetic semiconductors, CrI$_3$, CrBr$_3$, and CrCl$_3$, by incorporating both few- and bi-layer samples in van der Waals tunnel junctions. We find that the interlayer magnetic ordering, exchange gap, magnetic anisotropy, as well as magnon excitations evolve systematically with changing halogen atom. By fitting to a spin wave theory that account…
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We conduct a comprehensive study of three different magnetic semiconductors, CrI$_3$, CrBr$_3$, and CrCl$_3$, by incorporating both few- and bi-layer samples in van der Waals tunnel junctions. We find that the interlayer magnetic ordering, exchange gap, magnetic anisotropy, as well as magnon excitations evolve systematically with changing halogen atom. By fitting to a spin wave theory that accounts for nearest neighbor exchange interactions, we are able to further determine a simple spin Hamiltonian describing all three systems. These results extend the 2D magnetism platform to Ising, Heisenberg, and XY spin classes in a single material family. Using magneto-optical measurements, we additionally demonstrate that ferromagnetism can be stabilized down to monolayer in more isotropic CrBr$_3$, with transition temperature still close to that of the bulk.
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Submitted 23 May, 2019; v1 submitted 4 March, 2019;
originally announced March 2019.
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Few-electrode design for silicon MOS quantum dots
Authors:
Eduardo B. Ramirez,
Francois Sfigakis,
Sukanya Kudva,
Jonathan Baugh
Abstract:
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunne…
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Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunnel barriers are naturally formed by gaps between electrodes and controlled by adjacent accumulation gates. The accumulation gates define the electron reservoirs and provide tunability of the tunnel rate of nearly 8.5 decades/V, determined by a combination of charge sensor electron counting measurements and by direct transport. The valley splitting in the few-electron regime is probed by magneto-spectroscopy up to a field of 6 T, providing an estimate for the ground-state gap of 290 $μ$eV. We show preliminary characterization of a double quantum dot, demonstrating that this design can be extended to linear dot arrays that should be useful in applications like electron shuttling. These results motivate further innovations in MOS quantum dot design that can improve the scalability prospects for spin qubits.
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Submitted 19 July, 2019; v1 submitted 22 December, 2018;
originally announced December 2018.
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One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure
Authors:
Hyun Ho Kim,
Bowen Yang,
Tarun Patel,
Francois Sfigakis,
Chenghe Li,
Shangjie Tian,
Hechang Lei,
Adam W. Tsen
Abstract:
We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 Tesla field. The effect arises from a change between antiparallel to parallel alignment of spins across the different C…
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We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 Tesla field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI3 and present new opportunities for spintronics based on two-dimensional materials.
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Submitted 18 July, 2018; v1 submitted 30 March, 2018;
originally announced April 2018.
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Microwave spectroscopy of a carbon nanotube charge qubit
Authors:
Z. V. Penfold-Fitch,
F. Sfigakis,
M. R. Buitelaar
Abstract:
Carbon nanotube quantum dots allow accurate control of electron charge, spin and valley degrees of freedom in a material which is atomically perfect and can be grown isotopically pure. These properties underlie the unique potential of carbon nanotubes for quantum information processing, but develo** nanotube charge, spin, or spin-valley qubits requires efficient readout techniques as well as und…
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Carbon nanotube quantum dots allow accurate control of electron charge, spin and valley degrees of freedom in a material which is atomically perfect and can be grown isotopically pure. These properties underlie the unique potential of carbon nanotubes for quantum information processing, but develo** nanotube charge, spin, or spin-valley qubits requires efficient readout techniques as well as understanding and extending quantum coherence in these devices. Here, we report on microwave spectroscopy of a carbon nanotube charge qubit in which quantum information is encoded in the spatial position of an electron. We combine radio-frequency reflectometry measurements of the quantum capacitance of the device with microwave manipulation to drive transitions between the qubit states. This approach simplifies charge-state readout and allows us to operate the device at an optimal point where the qubit is first-order insensitive to charge noise. From these measurements, we are able to quantify the degree of charge noise experienced by the qubit and obtain an inhomogeneous charge coherence of 5 ns. We use a chopped microwave signal whose duty-cycle period is varied to measure the decay of the qubit states, yielding a charge relaxation time of 48 ns.
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Submitted 4 June, 2017;
originally announced June 2017.
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Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
Authors:
B. Zheng,
A. F. Croxall,
J. Waldie,
K. Das Gupta,
F. Sfigakis,
I. Farrer,
H. E. Beere,
D. A. Ritchie
Abstract:
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interactin…
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We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.
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Submitted 3 January, 2016; v1 submitted 27 November, 2015;
originally announced November 2015.
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The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
K. J. Thomas,
F. Sfigakis,
P. See,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantiz…
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We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.
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Submitted 6 November, 2015; v1 submitted 12 August, 2015;
originally announced August 2015.
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All-electric all-semiconductor spin field effect transistors
Authors:
Pojen Chuang,
Sheng-Chin Ho,
L. W. Smith,
F. Sfigakis,
M. Pepper,
Chin-Hung Chen,
Ju-Chun Fan,
J. P. Griffiths,
I. Farrer,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
Tse-Ming Chen
Abstract:
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to re…
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The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation, and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for the incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field effect transistor, in which these obstacles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins -- spin injection, manipulation, and detection -- in a purely electrical manner. Such a device is compatible with large-scale integration and hold promise for future spintronic devices for information processing.
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Submitted 22 June, 2015;
originally announced June 2015.
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Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
F. Sfigakis,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
A. R. Hamilton,
M. J. Kelly,
C. G. Smith
Abstract:
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that…
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Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B.
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Submitted 1 June, 2015; v1 submitted 4 March, 2015;
originally announced March 2015.
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Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly
Authors:
L. W. Smith,
H. Al-Taie,
F. Sfigakis,
P. See,
A. A. J. Lesage,
B. Xu,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum…
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The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.
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Submitted 28 July, 2014;
originally announced July 2014.
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Landau level spin diode in a GaAs two dimensional hole system
Authors:
O. Klochan,
A. R. Hamilton,
K. das Gupta,
F. Sfigakis,
H. E. Beere,
D. A. Ritchie
Abstract:
We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems…
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We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems.
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Submitted 15 June, 2014;
originally announced June 2014.
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Vortex detection and quantum transport in mesoscopic graphene Josephson junction arrays
Authors:
C. L. Richardson,
S. D. Edkins,
G. R. Berdiyorov,
C. J. Chua,
J. P. Griffiths,
G. A. C. Jones,
M. R. Buitelaar,
V. Narayan,
F. Sfigakis,
C. G. Smith,
L. Covaci,
M. R. Connolly
Abstract:
We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the fo…
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We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the formation of flux-quantized vortices. The applied fields at which the features occur are well described by Ginzburg-Landau simulations that take into account the number of unit cells in the array. We find that the mean conductance and universal conductance fluctuations are both enhanced below the critical temperature and field of the superconductor, with greater enhancement away from the graphene Dirac point.
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Submitted 21 June, 2015; v1 submitted 3 April, 2014;
originally announced April 2014.
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Evidence of Novel Quasiparticles in a Strongly Interacting Two-Dimensional Electron System: Giant Thermopower and Metallic Behaviour
Authors:
Vijay Narayan,
M. Pepper,
J. Griffths,
H. Beere,
F. Sfigakis,
G. Jones,
D. Ritchie,
A. Ghosh
Abstract:
We report thermopower ($S$) and electrical resistivity ($ρ_{2DES}$) measurements in low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We observe at temperatures $\lesssim$ 0.7 K a linearly growing $S$ as a function of temperature indicating metal-like behaviour. Interestingly this metallicity is not Dru…
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We report thermopower ($S$) and electrical resistivity ($ρ_{2DES}$) measurements in low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We observe at temperatures $\lesssim$ 0.7 K a linearly growing $S$ as a function of temperature indicating metal-like behaviour. Interestingly this metallicity is not Drude-like, showing several unusual characteristics: i) the magnitude of $S$ exceeds the Mott prediction valid for non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude; and ii) $ρ_{2DES}$ in this regime is two orders of magnitude greater than the quantum of resistance $h/e^2$ and shows very little temperature-dependence. We provide evidence suggesting that these observations arise due to the formation of novel quasiparticles in the 2DES that are not electron-like. Finally, $ρ_{2DES}$ and $S$ show an intriguing decoupling in their density-dependence, the latter showing striking oscillations and even sign changes that are completely absent in the resistivity.
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Submitted 22 August, 2012; v1 submitted 10 August, 2012;
originally announced August 2012.
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Unconventional Metallicity and Giant Thermopower in a Strongly Interacting Two Dimensional Electron System
Authors:
Vijay Narayan,
Srijit Goswami,
Michael Pepper,
Jonathan Griffiths,
Harvey Beere,
Francois Sfigakis,
Geb Jones,
Dave Ritchie,
Arindam Ghosh
Abstract:
We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localised regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance $h/e^2$, the therm…
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We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localised regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance $h/e^2$, the thermopower decreases linearly with temperature indicating metallicity. Remarkably, the magnitude of the thermopower exceeds the predicted value in non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude. Our results indicate a new quantum state and possibly a novel class of itinerant quasiparticles in dilute 2DESs at low temperatures where the Coulomb interaction plays a pivotal role.
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Submitted 22 August, 2012; v1 submitted 7 June, 2012;
originally announced June 2012.
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Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
Authors:
J. C. H. Chen,
D. Q. Wang,
O. Klochan,
A. P. Micolich,
K. Das Gupta,
F. Sfigakis,
D. A. Ritchie,
D. Reuter,
A. D. Wieck,
A. R. Hamilton
Abstract:
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (…
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We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.
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Submitted 3 April, 2012;
originally announced April 2012.
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Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas
Authors:
W. Y. Mak,
F. Sfigakis,
K. Das Gupta,
O. Klochan,
H. E. Beere,
I. Farrer,
J. P. Griffiths,
G. A. C. Jones,
A. R. Hamilton,
D. A. Ritchie
Abstract:
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be…
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We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).
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Submitted 16 March, 2013; v1 submitted 21 December, 2011;
originally announced December 2011.
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Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure
Authors:
K. Das Gupta,
A. F. Croxall,
W. Y. Mak,
H. E. Beere,
C. A. Nicoll,
I. Farrer,
F. Sfigakis,
D. A. Ritchie
Abstract:
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped…
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Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities.
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Submitted 18 November, 2011;
originally announced November 2011.
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Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures
Authors:
W. Y. Mak,
K. Das Gupta,
H. E. Beere,
I. Farrer,
F. Sfigakis,
D. A. Ritchie
Abstract:
We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentra…
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We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation do** due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants.
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Submitted 6 July, 2010;
originally announced July 2010.
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Kondo physics versus spin gap physics in fully spin-split quantum wires
Authors:
F. Sfigakis,
C. J. B. Ford,
M. Pepper,
D. A. Ritchie,
I. Farrer,
M. Y. Simmons,
D. Maude
Abstract:
Linear and nonlinear transport of quantum wires is investigated at a magnetic field where spin-split one-dimensional (1D) subbands are equidistant in energy. In this seldom-studied regime, experiments are consistent with a density-dependent energy gap between spin subbands, and with a complete spin polarization of the first 1D subband under a large source-drain bias at zero field.
Linear and nonlinear transport of quantum wires is investigated at a magnetic field where spin-split one-dimensional (1D) subbands are equidistant in energy. In this seldom-studied regime, experiments are consistent with a density-dependent energy gap between spin subbands, and with a complete spin polarization of the first 1D subband under a large source-drain bias at zero field.
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Submitted 18 August, 2009; v1 submitted 14 March, 2009;
originally announced March 2009.
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On the Zero-Bias Anomaly in Quantum Wires
Authors:
S. Sarkozy,
F. Sfigakis,
K. Das Gupta,
I. Farrer,
D. A. Ritchie,
G. A. C. Jones,
M. Pepper
Abstract:
Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin…
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Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.
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Submitted 6 October, 2008;
originally announced October 2008.
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Surface-acoustic-wave-driven luminescence from a lateral p-n junction
Authors:
J. R. Gell,
P. Atkinson,
S. P. Bremner,
F. Sfigakis,
M. Kataoka,
D. Anderson,
G. A. C. Jones,
C. H. W. Barnes,
D. A. Ritchie,
M. B. Ward,
C. E. Norman,
A. J. Shields
Abstract:
The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This typ…
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The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.
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Submitted 28 January, 2007;
originally announced January 2007.
