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Infrared Vertical External Cavity Surface Emitting Laser Threshold Magnetometer
Authors:
Nathan S. Gottesman,
Michael A. Slocum,
Gary A. Sevison,
Michael Wolf,
Michal L. Lukowski,
Chris Hessenius,
Mahmoud Fallahi,
Robert G. Bedford
Abstract:
Nitrogen-vacancy (NV) centers have considerable promise as high sensitivity magnetometers, however are commonly limited by inefficient collection and low contrasts. Laser threshold magnetometry (LTM) enables efficient collection and high contrasts, providing a path towards higher sensitivity magnetometry. We demonstrate an infrared LTM using an ensemble of NV centers in a single crystal diamond pl…
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Nitrogen-vacancy (NV) centers have considerable promise as high sensitivity magnetometers, however are commonly limited by inefficient collection and low contrasts. Laser threshold magnetometry (LTM) enables efficient collection and high contrasts, providing a path towards higher sensitivity magnetometry. We demonstrate an infrared LTM using an ensemble of NV centers in a single crystal diamond plate integrated into a vertical external cavity surface emitting laser. The laser was tuned to the spin dependent absorption line of the NV centers, allowing for optical readout by monitoring the laser output power. We demonstrate a magnetic sensitivity of 7.5~nT/$\sqrt{\textit{Hz}}$ in the frequency range between 10 and 50 Hz. Furthermore, the contrast and the projected PSNL sensitivity are shown to improve significantly by operating close to the lasing threshold, achieving 18.4\% and 26.6~pT/$\sqrt{\textit{Hz}}$ near threshold. What's more, an unexpected saturable absorption phenomenon was observed near threshold, which enhanced the contrast and projected PSNL sensitivity.
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Submitted 28 March, 2024;
originally announced March 2024.
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Phase change dynamics and 2-dimensional 4-bit memory in Ge2Sb2Te5 via telecom-band encoding
Authors:
Gary A. Sevison,
Shiva Farzinazar,
Joshua A. Burrow,
Christopher Perez,
Heungdong Kwon,
Jaeho Lee,
Mehdi Asheghi,
Kenneth E. Goodson,
Andrew Sarangan,
Joshua Hendrickson,
Imad Agha
Abstract:
As modern computing gets continuously pushed up against the von Neumann Bottleneck -- limiting the ultimate speeds for data transfer and computation -- new computing methods are needed in order to bypass this issue and keep our computer's evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these proto…
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As modern computing gets continuously pushed up against the von Neumann Bottleneck -- limiting the ultimate speeds for data transfer and computation -- new computing methods are needed in order to bypass this issue and keep our computer's evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these protocols, we require an optical memory: either a multilevel/accumulator memory, or a computational memory. Here, we propose and demonstrate a 2-dimensional 4-bit fully optical non-volatile memory using Ge2Sb2Te5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies. We verify our design and experimental results via rigorous numerical simulations based on finite element and nucleation theory, and we successfully write and read a string of characters using direct hexadecimal encoding.
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Submitted 7 October, 2019;
originally announced November 2019.
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Improving the performance of Ge$_2$Sb$_2$Te$_5$ materials via nickel do**: Towards RF-compatible phase-change devices
Authors:
Pengfei Guo,
Joshua A. Burrow,
Gary A. Sevison,
Aditya Sood,
Mehdi Asheghi,
Joshua R. Hendrickson,
Kenneth E. Goodson,
Imad Agha,
Andrew Sarangan
Abstract:
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective do** scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most imp…
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High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective do** scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most importantly, our results show that do** produces the desired electrical performance without adversely affecting the film's optical properties. The nickel do** level is approximately 2% and the lattice structure remains nearly unchanged when compared with undoped-GST. The refractive indices at amorphous and crystalline states were obtained using ellipsometry which echoes the results from XRD. The material's thermal transport properties are measured using time-domain thermoreflectance (TDTR), showing no change upon do**. The advantages of this do** system will open up new opportunities for designing electrically reconfigurable high speed optical elements in the near-infrared spectrum.
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Submitted 5 September, 2018;
originally announced October 2018.
