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Solution-Processed Inks with Fillers of NbS$_3$ Quasi-One-Dimensional Charge-Density-Wave Material
Authors:
Tekwam Geremew,
Maedeh Taheri,
Nicholas Sesing,
Subhajit Ghosh,
Fariborz Kargar,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution. The results of the electrical measurements of two-terminal electronic test str…
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We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution. The results of the electrical measurements of two-terminal electronic test structures printed on silicon substrates reveal resistance anomalies in the temperature range of ~330 K to 370 K. It was found that the changes in the temperature-dependent resistive characteristics of the test structures originate from the charge-density-wave phase transition of individual NbS$_3$ fillers. The latter confirms that the exfoliated NbS$_3$ fillers preserve their intrinsic charge-density-wave quantum condensate states and can undergo phase transitions above room temperature even after chemical exfoliation processes and printing. These results are important for develo** "quantum inks" with charge-density-wave fillers for the increased functionality of future solution-processed electronics.
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Submitted 13 April, 2024;
originally announced April 2024.
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Electrical-Field Modulation of the Charge-Density-Wave Quantum Condensate in h-BN/NbS$_3$ Heterostructure Devices
Authors:
Maedeh Taheri,
Nicholas Sesing,
Tina,
T. Salguero,
Alexander A. Balandin
Abstract:
We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric layers. The charge-density-wave phases and collective current in quasi-1D NbS$_3$ nanowires were verified via temperature dependence of the resistivity, non-lin…
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We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric layers. The charge-density-wave phases and collective current in quasi-1D NbS$_3$ nanowires were verified via temperature dependence of the resistivity, non-linear current-voltage characteristics, and Shapiro steps that appeared in the device response under radio frequency excitation mixed with the DC bias. It was demonstrated that the electric field of the applied gate bias can reversibly modulate the collective current of the sliding charge-density-wave condensate. The collective current reduces with more positive bias suggesting a surface effect on the condensate mobility. The single particle current, at small source-drain biases, shows small amplitude fluctuation behavior, attributed to the variations in the background potential due to the pinned or cree** charge-density-wave condensate. The knowledge of the electric-field effect on the charge density waves in quasi-1D NbS$_3$ nanowires is useful for potential electronic applications of such quantum materials.
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Submitted 29 October, 2023;
originally announced October 2023.
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Quantum Composites with the Functionality Defined by the Charge-Density-Wave Phase Transitions
Authors:
Zahra Barani,
Tekwam Geremew,
Megan Stokey,
Nicholas Sesing,
Maedeh Taheri,
Matthew J. Hilfiker,
Fariborz Kargar,
Mathias Schubert,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We demonstrate a unique class of advanced materials - quantum composites based on polymers with fillers comprised of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to colla…
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We demonstrate a unique class of advanced materials - quantum composites based on polymers with fillers comprised of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to collapses of the quantum states. We succeeded in preserving the macroscopic charge-density-wave phases of filler particles after multiple composite processing steps. The prepared composites manifest strong charge-density-wave phenomena even above room temperature. The dielectric constant experiences more than two orders of magnitude enhancement while the material maintains its electrically insulating properties, opening a venue for advanced applications in energy storage and electronics. The results present a conceptually different approach for engineering the properties of materials, extending the application domain for van der Waals materials.
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Submitted 21 February, 2023;
originally announced February 2023.
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Specifics of the Elemental Excitations in "True One-Dimensional" MoI$_3$ van der Waals Nanowires
Authors:
Fariborz Kargar,
Zahra Barani,
Nicholas R. Sesing,
Thuc T. Mai,
Topojit Debnath,
Huairuo Zhang,
Yuhang Liu,
Yanbing Zhu,
Subhajit Ghosh,
Adam J. Biacchi,
Felipe H. da Jornada,
Ludwig Bartels,
Tehseen Adel,
Angela R. Hight Walker,
Albert V. Davydov,
Tina T. Salguero,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate t…
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We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate that MoI$_3$ is an easy-plane antiferromagnet with alternating spins along the dimerized chains and with inter-chain helical spin ordering. The calculated frequencies of the phonons and magnons are consistent with the interpretation of the experimental Raman data. The obtained results shed light on the specifics of the phononic and magnonic states in MoI$_3$ and provide a strong motivation for future study of this unique material with potential for spintronic device applications.
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Submitted 10 October, 2022;
originally announced October 2022.
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Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices
Authors:
Maedeh Taheri,
Jonas Brown,
Adil Rehman,
Nicholas R. Sesing,
Fariborz Kargar,
Tina T. Salguero,
Sergey Rumyantsev,
Alexander A. Balandin
Abstract:
We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and th…
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We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while swee** the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.
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Submitted 10 August, 2022;
originally announced August 2022.
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Low-Frequency Noise in Quasi-1D (TaSe$_4$)$_2$I Weyl Semimetal Nanoribbons
Authors:
Subhajit Ghosh,
Fariborz Kargar,
Nick R. Sesing,
Zahra Barani,
Tina T. Salguero,
Dong Yan,
Sergey Rumyantsev,
Alexander A. Balandin
Abstract:
We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T…
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We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T~225 K. These spectral changes were attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe$_4$)$_2$I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons was surprisingly low, $\sim 10^{-9}$ um$^2$Hz$^{-1}$ at f=10 Hz, when measured below and above the Peierls transition temperature. Obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects.
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Submitted 12 August, 2022;
originally announced August 2022.
