-
The TRAMOS pixel as a photo-detection device: design, architecture and building blocks
Authors:
Nicolas T. Fourches,
Vishant Kumar,
Yves Serruys,
G. Gutierrez,
F. Leprêtre,
F. Jomard
Abstract:
The deep trap** gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate l…
▽ More
The deep trap** gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate localization. Source-drain current modulation occurs, measurable during readout. The buried gate (Deep Trap** Gate or DTG) contains deep level centers which can be introduced during process or may be made with a Quantum Well. The device can be scaled down providing a micron range resolution. The proof of principle for such a device was verified using 2D device and process simulations. Work under way focusses on the study of building blocks. In this contribution, the pixel proof of design, using existing fabrication techniques will be discussed first. The use of this pixel for photon imaging will be discussed
△ Less
Submitted 23 October, 2017;
originally announced October 2017.
-
Limits in point to point resolution of MOS (Metal-Oxide-Semiconductor) based pixels detector arrays
Authors:
Nicolas Fourches,
Xavier Coppolani,
Daniel Desforge,
Mariam Kebbiri,
Vishant Kumar,
Yves Serruys,
Gaêlle Gutierrez,
Frederic Leprêtre,
François Jomard
Abstract:
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pix…
▽ More
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pixel-pitch in the 10 micrometer range. Attempts to design small pixels based on SOI (Silicon On Insulator) technology will be briefly recalled here. This paper is devoted to the evaluation of the building blocks with regard to their use in pixel arrays for the accurate tracking of the charged particles. We will make here a simulations based quantitative evaluation of the physical limits in the pixel size. A design based on CMOS (Complementary Metal-Oxide-Semiconductor) compatible technologies that allows a reduction of the pixel size down to the sub-micronmeter range is introduced. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization.
△ Less
Submitted 5 February, 2018; v1 submitted 28 August, 2017;
originally announced August 2017.
-
Effect of 0.25 and 2.0 MeV He-ion irradiation on short-range ordering in model (EFDA) Fe-Cr alloys
Authors:
S. M. Dubiel,
J. Zukrowski,
Y. Serruys
Abstract:
The effect of He+ ion irradiation on a distribution of Cr atoms in model (EFDA) Fe(100-x)Cr(x) (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectroscopy. The alloys were irradiated to the dose of 1.2E16 ions per cm2 (7.5 dpa) with He+ of 0.25 and 2.0 MeV. The distribution of Cr atoms within the first two coordination shells around the probe Fe atoms was expressed in…
▽ More
The effect of He+ ion irradiation on a distribution of Cr atoms in model (EFDA) Fe(100-x)Cr(x) (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectroscopy. The alloys were irradiated to the dose of 1.2E16 ions per cm2 (7.5 dpa) with He+ of 0.25 and 2.0 MeV. The distribution of Cr atoms within the first two coordination shells around the probe Fe atoms was expressed in terms of the Warren-Cowley short-range order parameters alpha1 (first-neighbour shell, 1NN), alpha2 (second-neighbour shell, 2NN) and alpha12 (1NN+2NN. In non-irradiated alloys alpha1 was positive and alpha2 was negative for all three samples which indicates an ordering of Cr atoms. Yet, the value of alpha12 were close to zero, i.e. the distribution of Cr atoms averaged over the first two coordination shells around the probe Fe atoms, was random. The effect of the irradiation of the Fe5Cr sample is similar for the two energies of the He+ projectiles viz. increase of number of Cr atoms in the 1NN and decrease in the 2NN shell. Consequently, the degree of the ordering increased. For the other two samples, the effect of the irradiation depends on the composition, and it is stronger for the less energetic ions where, in the case of Fe10Cr, the disordering disappeared and some traces of Cr clustering (alpha12 weakly positive) can be seen. In the Fe15Cr sample the clustering is clear. In the samples irradiated with 2.0 MeV ions the ordering also survived in the samples with x=10.75 and 15.15, although its degree became smaller than in the Fe5Cr sample. Small changes in the magnetic texture were revealed.
△ Less
Submitted 5 July, 2018; v1 submitted 19 July, 2016;
originally announced July 2016.
-
Effect of He-ion irradiation on short-range ordering in model (EFDA) Fe-Cr alloys
Authors:
Stanislaw M. Dubiel,
Jan Żukrowski,
Yves Serruys
Abstract:
The effect of He-ion irradiation on a short-range ordering in model Fe100-xCrx (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectroscopy. The alloys were irradiated to the dose of 7.5 dpa with ions of 0.25 and 2.0 MeV. The short-range order was expressed in terms of the Warren-Cowley parameters: alpha1 (for the first nearest-neighbor shell), alpha2 (for the second n…
▽ More
The effect of He-ion irradiation on a short-range ordering in model Fe100-xCrx (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectroscopy. The alloys were irradiated to the dose of 7.5 dpa with ions of 0.25 and 2.0 MeV. The short-range order was expressed in terms of the Warren-Cowley parameters: alpha1 (for the first nearest-neighbor shell), alpha2 (for the second nearest-neighbor shell) and alpha12 (for both shells). For all alloys and both energies a clustering of Cr atoms was revealed, as far as alpha1 and alpha2 are considered, yet its degree was found to be both concentration and energy dependent. The average short-range order parameter, alpha12, exhibits, however, a cross-over transition at x=10 from ordering into clustering. The strongest effect of energy occurs at x=5.8 and the weakest one at x=10.75.
△ Less
Submitted 27 October, 2016; v1 submitted 23 February, 2014;
originally announced February 2014.
