Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials
Authors:
I. I. Klimovskikh,
S. V. Eremeev,
D. A. Estyunin,
S. O. Filnov,
K. Shimada,
V. A. Golyashov,
O. E. Tereshchenko,
K. A. Kokh,
A. S. Frolov,
A. I. Sergeev,
V. S. Stolyarov,
V. Miksic Trontl,
L. Petaccia,
G. Di Santo,
M. Tallarida,
J. Dai,
S. Blanco-Canosa,
T. Valla,
A. M. Shikin,
E. V. Chulkov
Abstract:
Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifi…
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Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.
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Submitted 18 March, 2024;
originally announced March 2024.
Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$
Authors:
Alexander S. Frolov,
Dmitry Yu. Usachov,
Artem V. Tarasov,
Alexander V. Fedorov,
Kirill A. Bokai,
Ilya Klimovskikh,
Vasily S. Stolyarov,
Anton I. Sergeev,
Alexander N. Lavrov,
Vladimir A. Golyashov,
Oleg E. Tereshchenko,
Giovanni Di Santo,
Luca Petaccia,
Oliver J. Clark,
Jaime Sanchez-Barriga,
Lada V. Yashina
Abstract:
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dep…
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For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs.
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Submitted 22 June, 2023;
originally announced June 2023.
