Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
Authors:
K. C. Ku,
S. J. Potashnik,
R. F. Wang,
M. J. Seong,
E. Johnston-Halperin,
R. C. Meyers,
S. H. Chun,
A. Mascarenhas,
A. C. Gossard,
D. D. Awschalom,
P. Schiffer,
N. Samarth
Abstract:
We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the car…
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We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.
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Submitted 19 October, 2002;
originally announced October 2002.
Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As
Authors:
M. J. Seong,
S. H. Chun,
Hyeonsik M. Cheong,
N. Samarth,
A. Mascarenhas
Abstract:
The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity ana…
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The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity analysis of the coupled plasmon-LO-phonon mode and the unscreened LO phonon. The unscreened LO phonon frequency linearly decreases as the Mn concentration increases up to 8.3%. The hole density determined from the Raman scattering shows a monotonic increase with increasing $x$ for $x\leq0.083$, exhibiting a direct correlation to the observed $T_c$. The optical technique reported here provides an unambiguous means of determining the hole density in this important new class of ``spintronic'' semiconductor materials.
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Submitted 3 June, 2002;
originally announced June 2002.
