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First demonstration of in-beam performance of bent Monolithic Active Pixel Sensors
Authors:
ALICE ITS project,
:,
G. Aglieri Rinella,
M. Agnello,
B. Alessandro,
F. Agnese,
R. S. Akram,
J. Alme,
E. Anderssen,
D. Andreou,
F. Antinori,
N. Apadula,
P. Atkinson,
R. Baccomi,
A. Badalà,
A. Balbino,
C. Bartels,
R. Barthel,
F. Baruffaldi,
I. Belikov,
S. Beole,
P. Becht,
A. Bhatti,
M. Bhopal,
N. Bianchi
, et al. (230 additional authors not shown)
Abstract:
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to ra…
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A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to radii of about 2cm without any signs of mechanical or electrical damage. During a subsequent characterisation using a 5.4GeV electron beam, it was further confirmed that they preserve their full electrical functionality as well as particle detection performance.
In this article, the bending procedure and the setup used for characterisation are detailed. Furthermore, the analysis of the beam test, including the measurement of the detection efficiency as a function of beam position and local inclination angle, is discussed. The results show that the sensors maintain their excellent performance after bending to radii of 2cm, with detection efficiencies above 99.9% at typical operating conditions, paving the way towards a new class of detectors with unprecedented low material budget and ideal geometrical properties.
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Submitted 17 August, 2021; v1 submitted 27 May, 2021;
originally announced May 2021.
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20 K superconductivity in heavily electron doped surface layer of FeSe bulk crystal
Authors:
J. J. Seo,
B. Y. Kim,
B. S. Kim,
J. K. Jeong,
J. M. Ok,
J. S. Kim,
J. D. Denlinger,
C. Kim,
Y. K. Kim
Abstract:
A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from its bulk value of 7 K. Currently, there are two main views on the origin of the enhanced Tc; in the first view, the enhancement comes from an interfacial effect…
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A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from its bulk value of 7 K. Currently, there are two main views on the origin of the enhanced Tc; in the first view, the enhancement comes from an interfacial effect while in the other it is from excess electrons with strong correlation strength. The issue is controversial and there are evidences that support each view. Finding the origin of the Tc enhancement could be the key to achieving even higher Tc and to identifying the microscopic mechanism for the superconductivity in iron-based materials. Here, we report the observation of 20 K superconductivity in the electron doped surface layer of FeSe. The electronic state of the surface layer possesses all the key spectroscopic aspects of the 1ML FeSe on STO. Without any interface effect, the surface layer state is found to have a moderate Tc of 20 K with a smaller gap opening of 4 meV. Our results clearly show that excess electrons with strong correlation strength alone cannot induce the maximum Tc, which in turn strongly suggests need for an interfacial effect to reach the enhanced Tc found in 1ML FeSe/STO.
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Submitted 14 December, 2015; v1 submitted 25 November, 2015;
originally announced November 2015.
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A note on q-analogue of Boole polynomials
Authors:
Dae San Kim,
Taekyun Kim,
Jong ** Seo
Abstract:
In this paper, we consider the q-extensions of Boole polynomials. From those polynomials, we derive some new and interesting properties and identities related to special polynomials.
In this paper, we consider the q-extensions of Boole polynomials. From those polynomials, we derive some new and interesting properties and identities related to special polynomials.
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Submitted 18 March, 2014;
originally announced March 2014.
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Identities of symmetry for higher-order generalized q-Euler polyonmials
Authors:
D. V. Dolgy,
D. S. Kim,
T. G. Kim,
J. J. Seo
Abstract:
In this paper, we investigate the properties of symmetry in two variables related to multiple Euler q-l-function which interpolates higher-order q-Euler polynomials at negative integers. From our investigation, we can derive many interesting identities of symmetry in two variables related to generalized higher-order q-Euler polynomials and alternating generalized q-power sums.
In this paper, we investigate the properties of symmetry in two variables related to multiple Euler q-l-function which interpolates higher-order q-Euler polynomials at negative integers. From our investigation, we can derive many interesting identities of symmetry in two variables related to generalized higher-order q-Euler polynomials and alternating generalized q-power sums.
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Submitted 17 December, 2013;
originally announced December 2013.
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Some identities of q-Bernoulli numbers associated p-adic convolutions
Authors:
J. J. Seo,
T. Kim,
S. H. Lee
Abstract:
In this paper, we give some interesting and new identities of q-Bernoulli numbers which are derived from convolutions on the ring of p-adic integers.
In this paper, we give some interesting and new identities of q-Bernoulli numbers which are derived from convolutions on the ring of p-adic integers.
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Submitted 1 July, 2013;
originally announced July 2013.
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p-adic invariant integral on Zp associated with the Changhee q-Bernoulli polynomials
Authors:
Jong ** Seo,
Taekyun Kim
Abstract:
In this paper, we study some properties of Changhee's q-Bernou lli polynomials which are derived from p-adic invariant integral on Zp. By using these properties, we give some interesting identities related to higher- order q-Bernoulli polynomials.
In this paper, we study some properties of Changhee's q-Bernou lli polynomials which are derived from p-adic invariant integral on Zp. By using these properties, we give some interesting identities related to higher- order q-Bernoulli polynomials.
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Submitted 29 June, 2013;
originally announced July 2013.
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Existence and uniqueness of positive solutions of boundary-value problems for fractional differential equations with p-Laplacian operator
Authors:
Erdoğan Şen,
Mehmet Acikgoz,
Jong ** Seo,
Serkan Araci,
Kamil Oruçoğlu
Abstract:
In this article, we consider the boundary-value problem of nonlinear fractional differential equation with p-Laplacian operator. By the properties of Green function and Schauder fixed point theorem, several existence and nonexistence results for positive solutions, in terms of two parameters are obtained. The uniqueness of positive solution on these parameters is also studied.
In this article, we consider the boundary-value problem of nonlinear fractional differential equation with p-Laplacian operator. By the properties of Green function and Schauder fixed point theorem, several existence and nonexistence results for positive solutions, in terms of two parameters are obtained. The uniqueness of positive solution on these parameters is also studied.
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Submitted 11 March, 2013; v1 submitted 1 March, 2013;
originally announced March 2013.
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Hermite polynomials related to Genocchi, Euler and Bernstein polynomials
Authors:
Serkan Araci,
Jong ** Seo,
Mehmet Acikgoz
Abstract:
The objective of this paper is to derive some interesting properties of Genocchi, Euler and Bernstein polynomials by means of the orthogonality of Hermite polynomials.
The objective of this paper is to derive some interesting properties of Genocchi, Euler and Bernstein polynomials by means of the orthogonality of Hermite polynomials.
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Submitted 21 May, 2013; v1 submitted 30 May, 2012;
originally announced May 2012.
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A new family of q-analogue of Genocchi numbers and polynomials of higher order
Authors:
Serkan Araci,
Mehmet Acikgoz,
Jong ** Seo
Abstract:
In this work, we consider the generating function of Kim's q-Euler polynomials and introduce new generalization of q-Genocchi polynomials and numbers of higher order. Also, we give surprising identities for studying in Analytic Numbers Theory and especially in Mathematical Physics. Moreover, by applying q-Mellin transformation to generating function of q-Genocchi polynomials of higher order and so…
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In this work, we consider the generating function of Kim's q-Euler polynomials and introduce new generalization of q-Genocchi polynomials and numbers of higher order. Also, we give surprising identities for studying in Analytic Numbers Theory and especially in Mathematical Physics. Moreover, by applying q-Mellin transformation to generating function of q-Genocchi polynomials of higher order and so we define q-Hurwitz-Zeta type function which interpolates of this polynomials at negative integers.
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Submitted 13 May, 2012;
originally announced May 2012.
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Explicit Formulas involving q-Euler Numbers and Polynomials
Authors:
Serkan Araci,
Mehmet Acikgoz,
Jong ** Seo
Abstract:
In this paper, we deal with q-Euler numbers and q-Bernoulli numbers. We derive some interesting relations for q-Euler numbers and polynomials by using their generating function and derivative operator. Also, we show between the q-Euler numbers and q-Bernoulli numbers via the p-adic q-integral in the p-adic integer ring.
In this paper, we deal with q-Euler numbers and q-Bernoulli numbers. We derive some interesting relations for q-Euler numbers and polynomials by using their generating function and derivative operator. Also, we show between the q-Euler numbers and q-Bernoulli numbers via the p-adic q-integral in the p-adic integer ring.
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Submitted 4 April, 2012; v1 submitted 28 March, 2012;
originally announced March 2012.
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A Unified Generating Function of the q-Genocchi Polynomials with their Interpolation Functions
Authors:
Serkan Araci,
Mehmet Açikgöz,
Hassan Jolany,
Jong ** Seo
Abstract:
The purpose of this paper is to construct of the unification q-extension Genocchi polynomials. We give some interesting relations of this type of polynomials. Finally, we derive the q-extensions of Hurwitz-zeta type functions from the Mellin transformation of this generating function which interpolates the unification of q-extension of Genocchi polynomials.
The purpose of this paper is to construct of the unification q-extension Genocchi polynomials. We give some interesting relations of this type of polynomials. Finally, we derive the q-extensions of Hurwitz-zeta type functions from the Mellin transformation of this generating function which interpolates the unification of q-extension of Genocchi polynomials.
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Submitted 29 July, 2011;
originally announced July 2011.
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A Study on Silicon Nanotubes based on the Tersoff potential
Authors:
Jeong Won Kang,
Jae Jeong Seo,
Ho Jung Hwang
Abstract:
This study showed the structures and the thermal behaviors of Si nanocages and nanotubes using classical molecular dynamics simulations based on the Tersoff potential. For hypothetical Si nanotubes based on the Tersoff potential, Si-Si bond length, cohesive energies per atom, diameters, and elastic energy to curve the sheet into tube were in good agreement with those obtained from previous densi…
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This study showed the structures and the thermal behaviors of Si nanocages and nanotubes using classical molecular dynamics simulations based on the Tersoff potential. For hypothetical Si nanotubes based on the Tersoff potential, Si-Si bond length, cohesive energies per atom, diameters, and elastic energy to curve the sheet into tube were in good agreement with those obtained from previous density-functional theory results. Most of the structures, which were obtained from the SA simulations for several initial structures with diamond structure, have included encaged, tubular, or sheet-like structures and have been composed of both sp3 and sp2 bonds. The cohesive energies per atom for silicon nanotubes were higher than that for the Si bulk in the diamond structure, and this implies the difficulty in producing silicon nanotubes or graphitelike sheets. However, since the elastic energy per atom to curve the sheet into tube for silicon atoms is very low, when graphitelike sheets of silicon are formed, the extra cost to produce silicon nanotubes is also very low. When silicon nanotubes are composed of both sp2 and sp3 bonds and the ratio of sp3 to sp2 is high, since the probability of the existence of silicon nanotubes increases, silicon nanotubes similar to multi walled structures are anticipated.
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Submitted 1 October, 2002;
originally announced October 2002.
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Defects in ultrathin copper nanowires
Authors:
Jeong Won Kang,
Jae Jeong Seo,
Ki Ryang Byun,
Ho Jung Hwang
Abstract:
We have performed atomistic simulations for cylindrical multi-shell (CMS)-type Cu nanowires containing defects. Our investigation has revealed some physical properties that have not been detected in previous studies that have considered defect-free nanowires. Since the vacancy formation energy is lowest in the core of a CMS-type nanowire, a vacancy formed in the outer shell of a CMS-type nanowir…
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We have performed atomistic simulations for cylindrical multi-shell (CMS)-type Cu nanowires containing defects. Our investigation has revealed some physical properties that have not been detected in previous studies that have considered defect-free nanowires. Since the vacancy formation energy is lowest in the core of a CMS-type nanowire, a vacancy formed in the outer shell of a CMS-type nanowire naturally migrates toward the core. The maximum of the formation energy of an adhered atom on the surface of a CMS-type nanowire was modeled using a 16-11-6-1 nanowire. The formation energy of an adhered atom decreased when the diameter of the CMS-type nanowire was either above or below the diameter of the peak energy maximum. This investigation found three recombination mechanisms for the vacancy-adhered atom pairs: (i) by direct recombination, (ii) by a kick-in recombination, and (iii) by a ring recombination. Vacancy formation energy calculations show that an onion-like cluster with a hollow was formed, and molecular dynamics simulations for various CMS-type nanowires found that vacancies migrated towards the core. From these, we obtained basic information on the formation of hollow CMS-type metal nanowires (metal nanotubes) [Y. Oshima, et al., Phys. Rev. B 65, 121401 (2002)].
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Submitted 4 July, 2002;
originally announced July 2002.
