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Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires
Authors:
Biplab Bhattacharyya,
Bahadur Singh,
R. P. Aloysius,
Reena Yadav,
Chenliang Su,
Hsin Lin,
S. Auluck,
Anurag Gupta,
T. D. Senguttuvan,
Sudhir Husale
Abstract:
Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi2Te3 topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under lon…
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Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi2Te3 topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under longitudinal magnetic field. We observe a large negative magnetoresistance which reaches -22% at 8T. The interplay between negative and positive magnetoresistance can be understood in terms of the competition between dephasing and spin-orbit scattering time scales. Based on the first-principles calculations within a density functional theory framework, we demonstrate that disorder (substitutional) by Ga+ ion milling process, which is used to fabricate nanowires, induces local magnetic moments in Bi2Te3 crystal that can lead to spin-dependent scattering of surface and bulk electrons. These experimental findings show a significant advance in the nanoscale spintronics applications based on longitudinal magnetoresistance in TIs. Our experimental results of large negative longitudinal magnetoresistance in 3D TIs further indicate that axial anomaly is a universal phenomenon in generic 3D metals.
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Submitted 24 May, 2019;
originally announced May 2019.
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Novel synthesis of topological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection
Authors:
Alka Sharma,
T D Senguttuvan,
V N Ojha,
Sudhir Husale
Abstract:
The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topologi…
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The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topological insulator) materials, their hybrid heterostructures with other novel 2D materials and their scalable growth. The substrate and temperature dependent growth is investigated on insulating, superconducting, metallic, semiconducting and ferromagnetic materials. The temperature dependent synthesis enables the growth of single, few quintuples to nanosheets and nanocrystals. The density of nanostructure growth is seen more on fabricated patterns or textured substrates. The fabricated nanostructure based devices show the broadband photodetection from ultraviolet to near infrared and exhibit high photoresponsivity. Ultimately, this unique synthesis process will give easy access to fabricate devices on user friendly substrates, study nanostructures and scalable growth will enable their future technology applications.
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Submitted 6 March, 2019;
originally announced March 2019.
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Proximity-induced supercurrent through topological insulator based nanowires for quantum computation studies
Authors:
Biplab Bhattacharyya,
V. P. S. Awana,
T. D. Senguttuvan,
V. N. Ojha,
Sudhir Husale
Abstract:
Proximity induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaevs one dimensional quantum wires, which pose a huge experimental challenge i…
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Proximity induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaevs one dimensional quantum wires, which pose a huge experimental challenge in terms of scalability of the current single nanowire based devices. Here, we address this problem by realizing robust superconductivity in junctions of fabricated topological insulator Bi2Se3 nanowires proximity coupled to conventional s wave superconducting W electrodes. Milling technique possesses great potential in fabrication of any desired shapes and structures at nanoscale level, and therefore can be effectively utilized to scale up the existing single nanowire based design into nanowire based network architectures. We demonstrate the dominant role of ballistic topological surface states in propagating the long range proximity induced superconducting order with high IcRN product in long Bi2Se3 junctions. Large upper critical magnetic fields exceeding the Chandrasekhar Clogston limit suggests the existence of robust superconducting order with spin triplet cooper pairing. An unconventional inverse dependence of IcRN product on the width of the nanowire junction was also observed.
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Submitted 22 November, 2018;
originally announced November 2018.
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Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions
Authors:
Alka Sharma,
A. K. Srivastava,
T. D. Senguttuvan,
Sudhir Husale
Abstract:
Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indi…
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Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm to 1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi2Te3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi2Te3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi2Te3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm ). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.
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Submitted 21 December, 2017; v1 submitted 20 December, 2017;
originally announced December 2017.
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Evidence of robust 2D transport and Efros-Shklovskii variable range hop** in disordered topological insulator (Bi2Se3) nanowires
Authors:
Biplab Bhattacharyya,
Alka Sharma,
Bhavesh Sinha,
Kunjal Shah,
Suhas Jejurikar,
T. D. Senguttuvan,
Sudhir Husale
Abstract:
We report the experimental observation of variable range hop** conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3). The value of the exponent in the hop** equation was extracted as ~ 1/2 for different widths of nanowires, which is the proof of the presence of Efros-Shklovskii hop** transport mechanism in a strongly disordered system. High…
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We report the experimental observation of variable range hop** conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3). The value of the exponent in the hop** equation was extracted as ~ 1/2 for different widths of nanowires, which is the proof of the presence of Efros-Shklovskii hop** transport mechanism in a strongly disordered system. High localization lengths (0.5nm, 20nm) were calculated for the devices. A careful analysis of the temperature dependent fluctuations present in the magnetoresistance curves, using the standard Universal Conductance Fluctuation theory, indicates the presence of 2D topological surface states. Also, the surface state contribution to the conductance was found very close to one conductance quantum. We believe that our experimental findings shed light on the understanding of quantum transport in disordered topological insulator based nanostructures.
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Submitted 16 August, 2017; v1 submitted 16 August, 2017;
originally announced August 2017.
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Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)
Authors:
Biplab Bhattacharyya,
Alka Sharma,
V P S Awana,
A. K. Srivastava,
T. D. Senguttuvan,
Sudhir Husale
Abstract:
Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanoribbons. Here we report robust approach of Bi2Se3 nan…
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Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanoribbons. Here we report robust approach of Bi2Se3 nanowire formation from deposited flakes using ion beam milling method. The fabricated Bi2Se3 nanowire devices have been employed to investigate the robustness of topological surface state (TSS) to gallium ion do** and any deformation in the material due to fabrication tools. We report the quantum oscillations in magnetoresistance curves under the parallel magnetic field. The resistance versus magnetic field curves have been studied and compared with Aharonov-Bohm (AB) interference effects which further demonstrate the transport through TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations and can be exploited further in studying the exotic electronic properties associated with TI based nanodevices.
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Submitted 26 December, 2016;
originally announced December 2016.
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FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance
Authors:
Biplab Bhattacharyya,
Alka Sharma,
V P S Awana,
T. D. Senguttuvan,
Sudhir Husale
Abstract:
Since the discovery of topological insulators (TI), there are considerable interests in demonstrating metallic surface states, their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by fabricating nanodevices. Here we address an important scientific issue related to TI whether one can clearly demonstrate the robustness of topological surface states (T…
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Since the discovery of topological insulators (TI), there are considerable interests in demonstrating metallic surface states, their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by fabricating nanodevices. Here we address an important scientific issue related to TI whether one can clearly demonstrate the robustness of topological surface states (TSS) to the presence of disorder that does not break any fundamental symmetry. The simple straightforward method of FIB milling was used to synthesize nanowires of Bi2Se3 which we believe an interesting route to test robustness of TSS and obtained results are new compared to many of the earlier papers on quantum transport in TI demonstrating robustness of metallic SS to gallium do**. In presence of perpendicular magnetic field, we have observed the co-existence of Shubnikov de Haas oscillations and linear magnetoresistance which was systematically investigated at different channel lengths indicating the Dirac dispersive surface states. The transport properties and estimated physical parameters shown here demonstrate the robustness of SS to the fabrication tools triggering flexibility to explore new exotic quantum phenomena at nanodevice level.
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Submitted 2 November, 2016;
originally announced November 2016.
