Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond
Authors:
Marwa Garsi,
Rainer Stöhr,
Andrej Denisenko,
Farida Shagieva,
Nils Trautmann,
Ulrich Vogl,
Badou Sene,
Florian Kaiser,
Andrea Zappe,
Rolf Reuter,
Jörg Wrachtrup
Abstract:
The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become significant at such scales, and map** current densities to reveal these features is decisive for the development of modern electronics. However, advanced non-invasive t…
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The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become significant at such scales, and map** current densities to reveal these features is decisive for the development of modern electronics. However, advanced non-invasive technologies either offer low sensitivity or poor spatial resolution and are limited to two-dimensional spatial map**. Here we use near-surface nitrogen-vacancy centres in diamond to probe Oersted fields created by current flowing within a multi-layered integrated circuit in pre-development. We show the reconstruction of the three-dimensional components of the current density with a magnitude down to about $\approx 10 \,\rm μA / μm^2$ and sub-micron spatial resolution at room temperature. We also report the localisation of currents in different layers and observe anomalous current flow in an electronic chip. Our method provides, therefore a decisive step toward three-dimensional current map** in technologically relevant nanoscale electronics chips.
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Submitted 11 June, 2024; v1 submitted 22 December, 2021;
originally announced December 2021.
