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Substitution of Lead with Tin Suppresses Ionic Transport in Halide Perovskite Optoelectronics
Authors:
Krishanu Dey,
Dibyajyoti Ghosh,
Matthew Pilot,
Samuel R Pering,
Bart Roose,
Priyanka Deswal,
Satyaprasad P Senanayak,
Petra J Cameron,
M Saiful Islam,
Samuel D Stranks
Abstract:
Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) ha…
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Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development.
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Submitted 3 May, 2023;
originally announced May 2023.
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Charge Transport in Mixed Metal Halide Perovskite Semiconductors
Authors:
Satyaprasad P. Senanayak,
Krishanu Dey,
Ravichandran Shivanna,
Weiwei Li,
Dibyajyoti Ghosh,
Bart Roose,
Youcheng Zhang,
Zahra Andaji-Garmaroudi,
Nikhil Tiwale,
Judith L. MacManus Driscoll,
Richard Friend,
Samuel D. Stranks,
Henning Sirringhaus
Abstract:
Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectro…
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Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectronic device operation. Here, we address both these challenges and demonstrate that field-effect transistors (FETs) based on methylammonium-free, mixed-metal (Pb/Sn) perovskite compositions, that are widely studied for solar cell and light-emitting diode applications, do not suffer from ion migration effects as their pure Pb counterparts and reliably exhibit hysteresis free p-type transport with high mobility reaching 5.4 $cm^2/Vs$, ON/OFF ratio approaching $10^6$, and normalized channel conductance of 3 S/m. The reduced ion migration is also manifested in an activated temperature dependence of the field-effect mobility with low activation energy, which reflects a significant density of shallow electronic defects. We visualize the suppressed in-plane ionic migration in Sn-containing perovskites compared to their pure-Pb counterparts using photoluminescence microscopy under bias and demonstrate promising voltage and current-stress device operational stabilities. Our work establishes FETs as an excellent platform for providing fundamental insights into the do**, defect and charge transport physics of mixed-metal halide perovskite semiconductors to advance their applications in optoelectronic devices.
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Submitted 5 February, 2022;
originally announced February 2022.
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Self-Assembled Photochromic Molecular Dipoles for High Performance Polymer Thin-Film Transistors
Authors:
Satyaprasad P. Senanayak,
Vinod K. Sangwan,
Julian J. McMorrow,
Ken Everaerts,
Zhihua Chen,
Antonio Facchetti,
Mark C. Hersam,
Tobin J. Marks,
K. S. Narayan
Abstract:
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized i…
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The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized in polymer thin-film transistors (TFTs) to realize high performance electronics with p-type field-effect mobility exceeding 2 cm^2/(V.s). A crossover in the transport mechanism from electrostatic dipolar disorder to ionic-induced disorder is observed in the transistor characteristics over a range of temperatures. The facile supramolecular design allows the possibility to optically control the extent of molecular and ionic polarization in the ultra-thin nanodielectric. Thus, we demonstrate a three-fold increase in the capacitance from 0.1 uF/cm^2 to 0.34 uF/cm^2, which results in a 200% increase in TFT channel current.
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Submitted 6 June, 2018;
originally announced June 2018.
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Room Temperature Band-like Transport and Hall Effect in a High Mobility Ambipolar Polymer
Authors:
Satyaprasad P. Senanayak,
A. Z. Ashar,
Catherine Kanimozhi,
Satish Patil,
K. S. Narayan
Abstract:
The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hop** between localized states versus extended state conduction. Here, we investigate the origin of ultra-low degree of disorder (~ 16 meV) and band-like negative temperature (T) coefficient of the field effect electron mobility in a high perf…
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The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hop** between localized states versus extended state conduction. Here, we investigate the origin of ultra-low degree of disorder (~ 16 meV) and band-like negative temperature (T) coefficient of the field effect electron mobility in a high performance diketopyrrolopyrrole (DPP)-based semiconducting polymer. Models based on the framework of mobility edge (ME) with exponential density of states are invoked to explain the trends in transport. The temperature window over which the system demonstrates de-localized transport was tuned by a systematic introduction of disorder at the transport interface. Additionally, the Hall mobility extracted from Hall-voltage measurements in these devices was found to be comparable to field effect mobility in the high T band-like regime. Comprehensive studies with different combinations of dielectrics and semiconductors demonstrate the effectiveness of rationale molecular design which emphasizes uniform-energetic landscape and low re-organization energy.
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Submitted 3 November, 2014;
originally announced November 2014.
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Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors
Authors:
Satyaprasad P. Senanayak,
S. Guha,
K. S. Narayan
Abstract:
Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrica…
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Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization-fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.
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Submitted 19 February, 2012;
originally announced February 2012.
