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Proximity-induced superconductivity within the InAs/GaSb edge conducting state
Authors:
A. Kononov,
V. A. Kostarev,
B. R. Semyagin,
V. V. Preobrazhenskii,
M. A. Putyato,
E. A. Emelyanov,
E. V. Deviatov
Abstract:
We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. F…
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We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12~nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~nm InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.
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Submitted 18 December, 2017; v1 submitted 31 October, 2017;
originally announced October 2017.
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Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor
Authors:
A. Kononov,
S. V. Egorov,
N. Titova,
B. R. Semyagin,
V. V. Preobrazhenskii,
M. A. Putyato,
E. A. Emelyanov,
E. V. Deviatov
Abstract:
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves…
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We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.
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Submitted 25 October, 2016;
originally announced October 2016.
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Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion
Authors:
A. Kononov,
S. V. Egorov,
V. A. Kostarev,
B. R. Semyagin,
V. V. Preobrazhenskii,
M. A. Putyato,
E. A. Emelyanov,
E. V. Deviatov
Abstract:
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which…
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We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.
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Submitted 27 May, 2016;
originally announced May 2016.
