Zero-bias photodetection in 2d materials via geometric design of contacts
Authors:
Valentin A. Semkin,
Aleksandr V. Shabanov,
Dmitry A. Mylnikov,
Mikhail A. Kashchenko,
Ivan K. Domaratskiy,
Sergey S. Zhukov,
Dmitry A. Svintsov
Abstract:
Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ do** being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a p…
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Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ do** being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe$_2$ with mutually orthogonal metal leads. Upon uniform illumination with linearly-polarized light, the device demonstrates non-zero photocurrent which flips its sign upon 90$^\circ$ polarization rotation. The origin of zero-bias photocurrent lies in polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair, and selectively activates the internal photoeffect at the respective metal-PdSe$_2$ Schottky junction. The proposed technology of contact engineering can be extended to arbitrary 2d materials and detection of both polarized and natural light.
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Submitted 29 March, 2023;
originally announced March 2023.
Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
Authors:
Dmitry Mylnikov,
Elena I. Titova,
Mikhail A. Kashchenko,
Ilya V. Safonov,
Sergey S. Zhukov,
Valentin A. Semkin,
Kostya S. Novoselov,
Denis A. Bandurin,
Dmitry A. Svintsov
Abstract:
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gappe…
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Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel do** even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.
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Submitted 8 December, 2022;
originally announced December 2022.
