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Cubic anisotropy of hole Zeeman splitting in semiconductor nanocrystals
Authors:
M. A. Semina,
A. A. Golovatenko,
A. V. Rodina
Abstract:
We study theoretically cubic anisotropy of Zeeman splitting of a hole localized in semiconductor nanocrystal. This anisotropy originates from three contributions: crystallographic cubically-symmetric spin and kinetic energy terms in the bulk Luttinger Hamiltonian and the spatial wave function distribution in a cube-shaped nanocrystal. From symmetry considerations, an effective Zeeman Hamiltonian f…
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We study theoretically cubic anisotropy of Zeeman splitting of a hole localized in semiconductor nanocrystal. This anisotropy originates from three contributions: crystallographic cubically-symmetric spin and kinetic energy terms in the bulk Luttinger Hamiltonian and the spatial wave function distribution in a cube-shaped nanocrystal. From symmetry considerations, an effective Zeeman Hamiltonian for the hole lowest even state is introduced, containing a spherically symmetric and a cubically symmetric term. The values of these terms are calculated numerically for spherical and cube-shaped nanocrystals as functions of the Luttinger Hamiltonian parameters. We demonstrate that the cubic shape of the nanocrystal and the cubic anisotropy of hole kinetic energy (so called valence band war**) significantly affect effective $g$ factors of hole states. In both cases, the effect comes from the cubic symmetry of the hole wave functions in zero magnetic field. Estimations for the effective $g$ factor values in several semiconductors with zinc-blende crystal lattices are made. Possible experimental manifestations and potential methods of measurement of the cubic anisotropy of the hole Zeeman splitting are suggested.
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Submitted 24 October, 2023;
originally announced October 2023.
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Shear Bernstein modes in a two-dimensional electron liquid
Authors:
A. N. Afanasiev,
P. S. Alekseev,
A. A. Greshnov,
M. A. Semina
Abstract:
Bernstein modes are formed as a result of non-local coupling of collective excitations and cyclotron harmonics in magnetized plasma. In degenerate solid state plasma they are typically associated with magnetoplasmons. A different type of Bernstein modes arises in two-dimensional electron liquid at sufficiently strong quasiparticle interaction. We consider Bernstein modes originating from coupling…
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Bernstein modes are formed as a result of non-local coupling of collective excitations and cyclotron harmonics in magnetized plasma. In degenerate solid state plasma they are typically associated with magnetoplasmons. A different type of Bernstein modes arises in two-dimensional electron liquid at sufficiently strong quasiparticle interaction. We consider Bernstein modes originating from coupling between quasiparticle cyclotron harmonics and shear magnetosound waves. The latter may be responsible for the giant peak in radio-frequency photoresistance observed in high-quality GaAs quantum wells. Using Landau-Silin kinetic equation with an arbitrary strength of the interparticle Landau interaction, we trace the reconstruction of Bernstein mode spectrum in high-quality 2D electron systems across the crossover between weakly interacting degenerate electron gas and the correlated electron liquid. Sensitivity of Bernstein modes to the strength of quasiparticle interaction allows one to use them for spectroscopy of Landau interaction function in the electron Fermi liquids.
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Submitted 18 December, 2023; v1 submitted 8 September, 2023;
originally announced September 2023.
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Exciton-polaritons in CsPbBr$_3$ crystals revealed by optical reflectivity in high magnetic fields and two-photon spectroscopy
Authors:
Dmitri R. Yakovlev,
Scott A. Crooker,
Marina A. Semina,
Janina Rautert,
Johannes Mund,
Dmitry N. Dirin,
Maksym V. Kovalenko,
Manfred Bayer
Abstract:
Cesium lead bromide (CsPbBr$_3$) is a representative material of the emerging class of lead halide perovskite semiconductors that possess remarkable optoelectronic properties. Its optical properties in the vicinity of the band gap energy are greatly contributed by excitons, which form exciton-polaritons due to strong light-matter interactions. We examine exciton-polaritons in solution-grown CsPbBr…
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Cesium lead bromide (CsPbBr$_3$) is a representative material of the emerging class of lead halide perovskite semiconductors that possess remarkable optoelectronic properties. Its optical properties in the vicinity of the band gap energy are greatly contributed by excitons, which form exciton-polaritons due to strong light-matter interactions. We examine exciton-polaritons in solution-grown CsPbBr$_3$ crystals by means of circularly-polarized reflection spectroscopy measured in high magnetic fields up to 60 T. The excited 2P exciton state is measured by two-photon absorption. Comprehensive modeling and analysis provides detailed quantitative information about the exciton-polariton parameters: exciton binding energy of 32.5 meV, oscillator strength characterized by longitudinal-tranverse splitting of 5.3 meV, dam** of 6.7 meV, reduced exciton mass of $0.18 m_0$, exciton diamagnetic shift of 1.6 $μ$eV/T$^2$, and exciton Landé factor $g_X=+2.35$. We show that the exciton states can be well described within a hydrogen-like model with an effective dielectric constant of 8.7. From the measured exciton longitudinal-transverse splitting we evaluate the Kane energy of $E_p=15$ eV, which is in reasonable agreement with values of $11.8-12.5$ eV derived from the carrier effective masses.
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Submitted 13 July, 2023;
originally announced July 2023.
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Tailoring the electron and hole Landé factors in lead halide perovskite nanocrystals by quantum confinement and halide exchange
Authors:
M. O. Nestoklon,
Erik Kirstein,
D. R. Yakovlev,
E. A. Zhukov,
M. M. Glazov,
M. A. Semina,
E. L. Ivchenko,
E. V. Kolobkova,
M. S. Kuznetsova,
Manfred Bayer
Abstract:
The tunability of the optical properties of lead halide perovskite nanocrystals makes them highly appealing for applications. Both, halide anion exchange and quantum confinement pave the way for tailoring their band gap energy. For spintronics applications, the Landé g-factors of electrons and hole are of great importance. By means of the empirical tight-binding and $\textbf{k}\cdot\textbf{p}$ met…
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The tunability of the optical properties of lead halide perovskite nanocrystals makes them highly appealing for applications. Both, halide anion exchange and quantum confinement pave the way for tailoring their band gap energy. For spintronics applications, the Landé g-factors of electrons and hole are of great importance. By means of the empirical tight-binding and $\textbf{k}\cdot\textbf{p}$ methods, we calculate them for nanocrystals of the class of all-inorganic lead halide perovskites CsPb$X_3$ ($X = \text{I},\,\text{Br},\,\text{Cl}$). The hole g-factor as function of the band gap follows the universal dependence found for bulk perovskites, while for the electrons a considerable modification is predicted. Based on the $\textbf{k}\cdot\textbf{p}$ analysis we conclude that this difference arises from the interaction of the bottom conduction band with the spin-orbit split electron states. The model predictions are confirmed by experimental data for the electron and hole g-factors in CsPbI3 nanocrystals placed in a glass matrix, measured by time-resolved Faraday ellipticity in a magnetic field at cryogenic temperatures.
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Submitted 4 September, 2023; v1 submitted 17 May, 2023;
originally announced May 2023.
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Control of the Bright-Dark Exciton Splitting using Lamb Shift in a 2D Semiconductor
Authors:
L. Ren,
C. Robert,
M. M. Glazov,
M. A. Semina,
T. Amand,
L. Lombez,
D. Lagarde,
T. Taniguchi,
K. Watanabe,
X. Marie
Abstract:
We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant…
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We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant Lamb shift of the optically active exciton which arises from emission and absorption of virtual photons triggered by the vacuum fluctuations of the electromagnetic field. We also measured strong variations of the bright exciton radiative linewidth, as a result of the Purcell effect. All these experimental results illustrate the strong sensitivity of the excitons to local vacuum field. We found a very good agreement with a model that demonstrates the equivalence, for our system, of a classical electrodynamical transfer matrix formalism and quantum-electrodynamical approach. The bright-dark splitting control demonstrated here should apply to any semiconductor structures.
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Submitted 31 March, 2023;
originally announced March 2023.
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Excitons and trions with negative effective masses in two-dimensional semiconductors
Authors:
M. A. Semina,
J. V. Mamedov,
M. M. Glazov
Abstract:
We study theoretically fundamental Coulomb-correlated complexes: neutral and charged excitons, also known as trions, in transition metal dichalogenides monolayers. We focus on the situation where one of the electrons occupies excited, high-lying, conduction band characterized by a negative effective mass. We develop the theory of such high-lying excitons and trions with negative effective mass and…
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We study theoretically fundamental Coulomb-correlated complexes: neutral and charged excitons, also known as trions, in transition metal dichalogenides monolayers. We focus on the situation where one of the electrons occupies excited, high-lying, conduction band characterized by a negative effective mass. We develop the theory of such high-lying excitons and trions with negative effective mass and demonstrate the key role of the non-parabolicity of the high-lying conduction band dispersion in formation of the bound exciton and trion states. We present simple, accurate and physically justified trial wavefunctions for calculating the binding energies of Coulomb-bound complexes and compare the results of variational calculations with those of a fully numerical approach. Within the developed model we discuss recent experimental results on observation of high-lying negative effective mass trions [K.-Q. Lin et al., Nat. Commun. 13, 6980 (2022)].
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Submitted 22 March, 2023; v1 submitted 27 January, 2023;
originally announced January 2023.
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Hall effect in Poiseuille flow of two-dimensional electron fluid
Authors:
A. N. Afanasiev,
P. S. Alekseev,
A. A. Danilenko,
A. P. Dmitriev,
A. A. Greshnov,
M. A. Semina
Abstract:
The hydrodynamic regime of charge transport has been recently realized in high-quality conductors. In the hydrodynamic as well as in the Ohmic regimes the main part of the Hall resistance of a long sample is determined by the balance between the Lorentz force and the electric force, acting on conduction electrons. Experimentally observed deviations of the Hall resistance in hydrodynamic samples fr…
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The hydrodynamic regime of charge transport has been recently realized in high-quality conductors. In the hydrodynamic as well as in the Ohmic regimes the main part of the Hall resistance of a long sample is determined by the balance between the Lorentz force and the electric force, acting on conduction electrons. Experimentally observed deviations of the Hall resistance in hydrodynamic samples from such the ''standard'' value are usually associated with the Hall viscosity term in the Navier-Stokes equation. In this work we theoretically study the Hall effect in a Poiseuille flow of a two-dimensional electron fluid. We show that the near-edge semiballistic layers with the width of the order of the inter-particle mean free path, which inevitably appear near sample edges, give the contribution to the Hall resistance which is comparable with the bulk contribution from the Hall viscosity. In this way, the measured deviations of the Hall resistance from the ''standard'' one in hydrodynamic samples by the usual contact techniques should be associated with both the Hall viscosity in the bulk and the semiballistic effects in the near-edge layers
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Submitted 5 August, 2022;
originally announced August 2022.
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Valley polarization fluctuations, bistability, and switching in two-dimensional semiconductors
Authors:
M. A. Semina,
M. M. Glazov,
C. Robert,
L. Lombez,
T. Amand,
X. Marie
Abstract:
We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of t…
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We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of the valley polarization where two steady states with low and high valley polarization are formed. We study the effects of fluctuations and noise in such system. We evaluate valley polarization autocorrelation functions and demonstrate that for a high-polarization regime the fluctuations are characterized by high amplitude and long relaxation time. We study the switching between the low- and high-valley polarized states caused by the noise in the system and demonstrate that the state with high valley polarization is preferential in a wide range of pum** rates.
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Submitted 28 June, 2022; v1 submitted 10 April, 2022;
originally announced April 2022.
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Rotational viscosity in spin resonance of hydrodynamic electrons
Authors:
A. N. Afanasiev,
P. S. Alekseev,
A. A. Danilenko,
A. A. Greshnov,
M. A. Semina
Abstract:
In novel ultra-pure materials electrons can form a viscous fluid, which is fundamentally different by its dynamics from the electron gas in ordinary conductors with significant density of defects. The shape of the non-stationary flow of such electron fluid is similar to the alternating flow of blood in large-radius arteries [J. R. Womersley, J. Physiol. 127, 552 (1955)]. The rotational viscosity e…
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In novel ultra-pure materials electrons can form a viscous fluid, which is fundamentally different by its dynamics from the electron gas in ordinary conductors with significant density of defects. The shape of the non-stationary flow of such electron fluid is similar to the alternating flow of blood in large-radius arteries [J. R. Womersley, J. Physiol. 127, 552 (1955)]. The rotational viscosity effect is responsible for interconnection between the dynamics of electron spins and flow inhomogeneities. In particular, it induces the spin polarization of electrons in a curled flow via an internal spin-orbit torque acting on electron spins. Here we show that this effect in an electron fluid placed in a magnetic field leads to a correction to the ac sample impedance, which has a resonance at the Larmor frequency of electrons. In this way, via the electrically detected spin resonance the Womersley flow of an electron fluid can be visualized and the rotational viscosity can be measured.
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Submitted 11 July, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Flexural deformations and collapse of bilayer two-dimensional crystals by interlayer exciton
Authors:
Z. A. Iakovlev,
M. A. Semina,
M. M. Glazov,
E. Ya. Sherman
Abstract:
We develop a consistent theory of the interlayer exciton-polaron formed in atomically-thin bilayers. Coulomb attraction between an electron and a hole situated in the different layers results in their flexural deformation and provides an efficient mechanism of the exciton coupling with flexural phonons. We study the effect of layers tension on the polaron binding energy and effective mass leading…
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We develop a consistent theory of the interlayer exciton-polaron formed in atomically-thin bilayers. Coulomb attraction between an electron and a hole situated in the different layers results in their flexural deformation and provides an efficient mechanism of the exciton coupling with flexural phonons. We study the effect of layers tension on the polaron binding energy and effective mass leading to suppression of polaron formation by the tension both in the weak and strong coupling regimes. We also consider the role of the nonlinearity related to the interaction between the out- and in-plane lattice displacements and obtain the criterion of the layer sticking, where the exciton collapses, due to the Coulomb attraction between the charge carriers.
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Submitted 3 May, 2022; v1 submitted 24 February, 2022;
originally announced February 2022.
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The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
Authors:
E. Kirstein,
D. R. Yakovlev,
M. M. Glazov,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
G. S. Dimitriev,
M. A. Semina,
M. O. Nestoklon,
E. L. Ivchenko,
N. E. Kopteva,
D. N. Dirin,
O. Nazarenko,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
M. Bayer
Abstract:
The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)…
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The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.
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Submitted 31 December, 2021;
originally announced December 2021.
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Ballistic flow of two-dimensional electrons in a magnetic field
Authors:
A. N. Afanasiev,
P. S. Alekseev,
A. A. Greshnov,
M. A. Semina
Abstract:
In conductors with a very small density of defects, electrons at low temperatures collide predominantly with the edges of a sample. Therefore, the ballistic regime of charge and heat transport is realized. The application of a perpendicular magnetic field substantially modifies the character of ballistic transport. For the case of two-dimensional (2D) electrons in the magnetic fields corresponding…
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In conductors with a very small density of defects, electrons at low temperatures collide predominantly with the edges of a sample. Therefore, the ballistic regime of charge and heat transport is realized. The application of a perpendicular magnetic field substantially modifies the character of ballistic transport. For the case of two-dimensional (2D) electrons in the magnetic fields corresponding to the diameter of the cyclotron trajectories smaller than the sample width a hydrodynamic transport regime is formed. In the latter regime, the flow is mainly controlled by rare electron-electron collisions, which determine the viscosity effect. In this work, we study the ballistic flow of 2D electrons in long samples in magnetic fields up to the critical field of the transition to the hydrodynamic regime. From the solution of the kinetic equation, we obtain analytical formulas for the profiles of the current density and the Hall electric field far and near the ballistic-hydrodynamic transition as well as for the longitudinal and the Hall resistances in these ranges. Our theoretical results, apparently, describe the observed longitudinal resistance of pure graphene samples in the diapason of magnetic fields below the ballistic-hydrodynamic transition.
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Submitted 24 November, 2021;
originally announced November 2021.
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Electron recoil effect in electrically tunable MoSe2 monolayers
Authors:
Jonas Zipfel,
Koloman Wagner,
Marina A. Semina,
Jonas D. Ziegler,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail M. Glazov,
Alexey Chernikov
Abstract:
Radiative recombination of excitons dressed by the interactions with free charge carriers often occurs under simultaneous excitation of either electrons or holes to unbound states. This phenomenon, known as the electron recoil effect, manifests itself in pronounced, asymmetric spectral lineshapes of the resulting emission. We study the electron recoil effect experimentally in electrically-tunable…
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Radiative recombination of excitons dressed by the interactions with free charge carriers often occurs under simultaneous excitation of either electrons or holes to unbound states. This phenomenon, known as the electron recoil effect, manifests itself in pronounced, asymmetric spectral lineshapes of the resulting emission. We study the electron recoil effect experimentally in electrically-tunable monolayer semiconductors and derive it theoretically using both trion and Fermi-polaron pictures. Time-resolved analysis of the recoil lineshapes is employed to access transient, non-equilibrium states of the exciton-carrier complexes. We demonstrate cooling of the initially overheated populations on the picosecond timescales and reveal the impact of lattice temperature and free carrier density. Both thermally activated phonons and the presence of free charges are shown to accelerate equilibration. Finally, we find strong correlations between relaxation times from recoil analysis and luminescence rise times, providing a consistent interpretation for the initial dynamics of trion/Fermi-polaron states.
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Submitted 16 November, 2021; v1 submitted 15 November, 2021;
originally announced November 2021.
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Electron, hole and exciton effective g-factors in semiconductor nanocrystals
Authors:
M. A. Semina,
A. A. Golovatenko,
A. V. Rodina
Abstract:
We review the existing and present the new results of $\bf kp$ calculations of the electron, hole, and exciton effective $g$-factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for calculation of electron $g$-factor size dependence in bare nanocrystals within the eight-band Kane model. Using the spherical approximation for Luttinger Hamilt…
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We review the existing and present the new results of $\bf kp$ calculations of the electron, hole, and exciton effective $g$-factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for calculation of electron $g$-factor size dependence in bare nanocrystals within the eight-band Kane model. Using the spherical approximation for Luttinger Hamiltonian we find the dependence of hole $g$-factor on light to heavy hole effective mass ratio in semiconductor nanostructures with spherical, axial, and cubically symmetric shape. We show that the non-equidistant Zeeman splitting of the four-fold degenerate hole state may take place in cube and spheroidal nanocrystals. We present a comparison of the calculated hole $g$-factors in nanostructures based on II-VI and III-V semiconductors for different sets of the Luttinger parameters and analyze the main effects contributing to the $g$-factor renormalization with the respect to the bulk value. We discuss different approaches to the definition of the hole and exciton $g$-factors which should be taken into account during the analysis of the experimental data and compare our results of $g$-factor calculations with the experimental data for semiconductor spherical nanocrystals and thin nanoplatelets available in the literature.
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Submitted 22 November, 2020;
originally announced November 2020.
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Ballistic-hydrodynamic phase transition in flow of two-dimensional electrons
Authors:
A. N. Afanasiev,
P. S. Alekseev,
A. A. Greshnov,
M. A. Semina
Abstract:
Phase transitions are characterized by a sharp change in the type of dynamics of microparticles, and their description usually requires quantum mechanics. Recently, a peculiar type of conductors was discovered in which two-dimensional (2D) electrons form a viscous fluid. In this work we reveal that such electron fluid in high-quality samples can be formed from ballistic electrons via a phase trans…
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Phase transitions are characterized by a sharp change in the type of dynamics of microparticles, and their description usually requires quantum mechanics. Recently, a peculiar type of conductors was discovered in which two-dimensional (2D) electrons form a viscous fluid. In this work we reveal that such electron fluid in high-quality samples can be formed from ballistic electrons via a phase transition. For this purpose, we theoretically study the evolution of a ballistic flow of 2D weakly interacting electrons with an increase of magnetic field and trace an emergence of a fluid fraction at a certain critical field. Such restructuring of the flow manifests itself in a kink in magnetic-field dependencies of the longitudinal and the Hall resistances. It is remarkable that the studied phase transition has a classical-mechanical origin and is determined by both the ballistic size effects and the electron-electron scattering. Our analysis shows that this effect was apparently observed in the recent transport experiments on 2D electrons in graphene and high-mobility GaAs quantum wells.
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Submitted 21 June, 2021; v1 submitted 4 October, 2020;
originally announced October 2020.
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Interlayer exciton-polaron in atomically thin semiconductors
Authors:
M. A. Semina,
M. M. Glazov,
E. Ya. Sherman
Abstract:
A novel type of exciton-phonon bound state -- interlayer polaron -- in a double-layer two-dimensional semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems the interaction of the interlayer exciton with the soft modes of out-of-plane lattice vibrations caused by van der Waals forces and flexural rigidity gives rise to a bound quasiparticle. The energy an…
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A novel type of exciton-phonon bound state -- interlayer polaron -- in a double-layer two-dimensional semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems the interaction of the interlayer exciton with the soft modes of out-of-plane lattice vibrations caused by van der Waals forces and flexural rigidity gives rise to a bound quasiparticle. The energy and effective mass of the formed polaron for weak and strong exciton-phonon coupling regimes are calculated and analyzed. Possible manifestations of these effects in transport- and spectroscopy-related experiments are discussed.
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Submitted 4 October, 2020; v1 submitted 6 September, 2020;
originally announced September 2020.
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Optical harmonic generation on the exciton-polariton in ZnSe
Authors:
Johannes Mund,
Dmitri R. Yakovlev,
Marina A. Semina,
Manfred Bayer
Abstract:
We study optical harmonic generation on the 1S exciton-polariton in the semiconductor ZnSe. Intense and spectrally narrow exciton resonances are found in optical second (SHG), third (THG), and fourth (FHG) harmonic generation spectra. The resonances are shifted to higher energy by 3.2 meV from the exciton energy in the linear reflectivity spectrum. Additional resonances are observed in the THG and…
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We study optical harmonic generation on the 1S exciton-polariton in the semiconductor ZnSe. Intense and spectrally narrow exciton resonances are found in optical second (SHG), third (THG), and fourth (FHG) harmonic generation spectra. The resonances are shifted to higher energy by 3.2 meV from the exciton energy in the linear reflectivity spectrum. Additional resonances are observed in the THG and FHG spectra and assigned to combinations of incident and backscattered photons in the crystal. Rotational anisotropy diagrams are measured and further information on the origin of the optical harmonic generation and the involved exciton states is obtained by a symmetry analysis using group theory in combination with a microscopic consideration.
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Submitted 23 June, 2020;
originally announced June 2020.
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Light-matter coupling and non-equilibrium dynamics of exchange-split trions in monolayer WS2
Authors:
Jonas Zipfel,
Koloman Wagner,
Jonas D. Ziegler,
Takashi Taniguchi,
Kenji Watanabe,
Marina A. Semina,
Alexey Chernikov
Abstract:
Monolayers of transition metal dichalcogenides present an intriguing platform to investigate the interplay of excitonic complexes in two dimensional semiconductors. Here, we use optical spectroscopy to study light-matter coupling and non-equilibrium relaxation dynamics of three-particle exciton states, commonly known as trions. We identify the consequences of the exchange interaction for the trion…
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Monolayers of transition metal dichalcogenides present an intriguing platform to investigate the interplay of excitonic complexes in two dimensional semiconductors. Here, we use optical spectroscopy to study light-matter coupling and non-equilibrium relaxation dynamics of three-particle exciton states, commonly known as trions. We identify the consequences of the exchange interaction for the trion finestructure in tungsten-based monolayer materials from variational calculations and experimentally determine the resulting characteristic differences in their oscillator strength. It allows us to quantitatively extract trion populations from time-resolved photoluminescence measurements and monitor their dynamics after off-resonant optical injection. At liquid helium temperature we observe pronounced non-equilibrium distribution of the trions during their lifetime with comparatively slow equilibration that occurs on time-scales up to several 100's of ps. In addition, we find an intriguing regime of population inversion at lowest excitation densities that builds up and is maintained during 10's of picoseconds. With increased lattice temperature the equilibrium is established more rapidly and the inversion disappears, highlighting the role of thermal activation for efficient scattering between exchange-split trions.
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Submitted 8 May, 2020;
originally announced May 2020.
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Magneto-Stark and Zeeman effect as origin of second harmonic generation of excitons in Cu$_2$O
Authors:
A. Farenbruch,
J. Mund,
D. Fröhlich,
D. R. Yakovlev,
M. Bayer,
M. A. Semina,
M. M. Glazov
Abstract:
We report on the experimental and theoretical investigation of magnetic-field-induced second harmonic generation (SHG) and two-photon absorption (TPA) of excited exciton states ($n \geq 3$) of the yellow series in Cu$_2$O. In this centrosymmetric material, SHG can occur due to constructive interplay of electric dipole and electric quadrupole/magnetic dipole transitions for light propagating along…
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We report on the experimental and theoretical investigation of magnetic-field-induced second harmonic generation (SHG) and two-photon absorption (TPA) of excited exciton states ($n \geq 3$) of the yellow series in Cu$_2$O. In this centrosymmetric material, SHG can occur due to constructive interplay of electric dipole and electric quadrupole/magnetic dipole transitions for light propagating along the low-symmetry directions [111] or [112]. By application of a magnetic field in Voigt configuration, SHG gets also allowed for excitation along the [110]-axis and even the high-symmetry cubic direction [001]. Combining a symmetry analysis and a microscopic theory, we uncover the two key contributions to the magnetic-field-induced SHG: the Zeeman effect and the magneto-Stark effect. We demonstrate systematic dependencies of the SHG intensity on the linear polarization angles of the ingoing fundamental laser and the outgoing SHG beam. In general, the resulting contour plots in combination with a symmetry analysis allow one to determine uniquely the character of involved transitions. Moreover, we can separate in magnetic field the Zeeman and the magneto-Stark effect through appropriate choice of the experimental geometry and polarization configuration. We present a microscopic theory of the second harmonic generation of excitons in a centrosymmetric cubic semiconductor taking into account the symmetry and the band structure of cuprous oxide. Based on the developed microscopic theory we identify the main contributions to the second-order nonlinear susceptibility of $S$-, $P$- and $D$-excitons. We analyze the redistribution of SHG intensities between the excitonic states both in the absence and presence of the magnetic field and show good agreement with the experimental data. With increasing exciton principal quantum number the magneto-Stark effect overpowers the influence of the Zeeman effect.
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Submitted 26 February, 2020;
originally announced February 2020.
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Intervalley Polaron in Atomically Thin Transition Metal Dichalcogenides
Authors:
M. M. Glazov,
M. A. Semina,
C. Robert,
B. Urbaszek,
T. Amand,
X. Marie
Abstract:
We study theoretically intervalley coupling in transition-metal dichalcogenide monolayers due to electron interaction with short-wavelength phonons. We demonstrate that this intervalley polaron coupling results in (i) a renormalization of the conduction band spin splitting and (ii) an increase of the electron effective masses. We also calculate the renormalization of the cyclotron energy and the L…
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We study theoretically intervalley coupling in transition-metal dichalcogenide monolayers due to electron interaction with short-wavelength phonons. We demonstrate that this intervalley polaron coupling results in (i) a renormalization of the conduction band spin splitting and (ii) an increase of the electron effective masses. We also calculate the renormalization of the cyclotron energy and the Landau level splitting in the presence of an external magnetic field. An inter-valley magneto-phonon resonance is uncovered. Similar, but much weaker effects are also expected for the valence band holes. These results might help to resolve the discrepancy between ab initio values of the electron effective masses and the ones deduced from magneto-transport measurements.
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Submitted 18 June, 2019; v1 submitted 4 April, 2019;
originally announced April 2019.
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The Hall effect in ballistic flow of two-dimensional interacting particles
Authors:
P. S. Alekseev,
M. A. Semina
Abstract:
In high-quality solid-state systems at low temperatures, the hydrodynamic or the ballistic regimes of heat and charge transport are realized in the electron and the phonon systems. In these regimes, the thermal and the electric conductance of the sample can reach abnormally large magnitudes. In this paper, we study the Hall effect in a system of interacting two-dimensional charged particles in a b…
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In high-quality solid-state systems at low temperatures, the hydrodynamic or the ballistic regimes of heat and charge transport are realized in the electron and the phonon systems. In these regimes, the thermal and the electric conductance of the sample can reach abnormally large magnitudes. In this paper, we study the Hall effect in a system of interacting two-dimensional charged particles in a ballistic regime. We demonstrated that the Hall electric field is caused by a change in the densities of particles due to the effect of external fields on their free motions between the sample edges. In one-component (electron or hole) systems the Hall coefficient turns out to one half compared with the one in conventional disordered Ohmic samples. This result is consistent with the recent experiment on measuring of the Hall resistance in ultra-high-mobility GaAs quantum wells. In two-component electron-hole systems the Hall electric field depends linearly on the difference between the concentrations of electrons and holes near the charge neutrality point (the equilibrium electron and hole densities coincide) and saturates to the Hall field of a one-component system far from the charge neutrality point. We also studied the corrections to magnetoresistance and the Hall electric field due to inter-particle scattering being a precursor of forming a viscous flow. For the samples shorter than the inter-particle scattering length, the obtained corrections govern the dependencies of magnetoresistance and the Hall field on temperature.
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Submitted 19 March, 2019;
originally announced March 2019.
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Control of the Exciton Radiative Lifetime in van der Waals Heterostructures
Authors:
H. H. Fang,
B. Han,
C. Robert,
M. A. Semina,
D. Lagarde,
E. Courtade,
T. Taniguchi,
K. Watanabe,
T. Amand,
B. Urbaszek,
M. M. Glazov,
X. Marie
Abstract:
Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures…
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Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures can be tailored by a simple change of the hBN encapsulation layer thickness as a consequence of the Purcell effect. The time-resolved photoluminescence measurements together with cw reflectivity and photoluminescence experiments show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers. The inhibition of the radiative recombination can yield spontaneous emission time up to $10$~ps. These results are in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime. The analysis shows that we are also able to observe a sizeable enhancement of the exciton radiative decay rate. Understanding the role of these electrodynamical effects allow us to elucidate the complex dynamics of relaxation and recombination for both neutral and charged excitons.
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Submitted 15 July, 2019; v1 submitted 2 February, 2019;
originally announced February 2019.
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Third harmonic generation on exciton-polaritons in bulk semiconductors subject to a magnetic field
Authors:
W. Warkentin,
J. Mund,
D. R. Yakovlev,
V. V. Pavlov,
R. V. Pisarev,
A. V. Rodina,
M. A. Semina,
M. M. Glazov,
E. L. Ivchenko,
M. Bayer
Abstract:
We report on a comprehensive experimental and theoretical study of optical third harmonic generation (THG) on the exciton-polariton resonances in the zinc-blende semiconductors GaAs, CdTe, and ZnSe subject to an external magnetic field, representing a topic that had remained unexplored so far. In these crystals, crystallographic THG is allowed in the electric-dipole approximation, so that no stron…
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We report on a comprehensive experimental and theoretical study of optical third harmonic generation (THG) on the exciton-polariton resonances in the zinc-blende semiconductors GaAs, CdTe, and ZnSe subject to an external magnetic field, representing a topic that had remained unexplored so far. In these crystals, crystallographic THG is allowed in the electric-dipole approximation, so that no strong magnetic-field-induced changes of the THG are expected. Therefore, it comes as a total surprise that we observe a drastic enhancement of the THG intensity by a factor of fifty for the $1s$-exciton-polariton in GaAs in magnetic fields up to 10 T. In contrast, the corresponding enhancement is moderate for CdTe and almost neglectful for ZnSe. In order to explain this strong variation, we develop a microscopic theory accounting for the optical harmonics generation on exciton-polaritons and analyze the THG mechanisms induced by the magnetic field. The calculations show that the increase of THG intensity is dominated by the magnetic field enhancement of the exciton oscillator strength which is particularly strong for GaAs in the studied range of field strengths. The much weaker increase of THG intensity in CdTe and ZnSe is explained by the considerably larger exciton binding energies, leading to a weaker modification of their oscillator strengths by the magnetic field.
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Submitted 18 June, 2018;
originally announced June 2018.
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A classical mechanism for negative magnetoresistance in two-dimensional systems in the ballistic regime
Authors:
P. S. Alekseev,
M. A. Semina
Abstract:
In ultra-high quality two-dimensional (2D) materials the mean free paths of phonons and electrons relative to all mechanisms of scattering can be much greater than a size of a sample. In this case the most intensive type of scattering of particles is their collisions with sample edges and the ballistic regime of heat and charge transport is realized. We study the ballistic transport of classical i…
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In ultra-high quality two-dimensional (2D) materials the mean free paths of phonons and electrons relative to all mechanisms of scattering can be much greater than a size of a sample. In this case the most intensive type of scattering of particles is their collisions with sample edges and the ballistic regime of heat and charge transport is realized. We study the ballistic transport of classical interacting 2D particles in a long narrow sample. We show that the inter-particle scattering conserving momentum leads to a positive hydrodynamic correction to the ballistic conductance, which is a precursor of the viscous Poiseuille flow. We examine the effect of weak magnetic field on the electron ballistic conductance and predict a novel classical ballistic mechanism for negative magnetoresistance. Our analysis demonstrates that, apparently, such mechanism explains the temperature-independent part of the giant negative magnetoresistance recently observed in the ultra-high mobility GaAs quantum wells.
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Submitted 16 April, 2018; v1 submitted 9 January, 2018;
originally announced January 2018.
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Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures
Authors:
C. Robert,
M. A. Semina,
F. Cadiz,
M. Manca,
E. Courtade,
T. Taniguchi,
K. Watanabe,
H. Cai,
S. Tongay,
B. Lassagne,
P. Renucci,
T. Amand,
X. Marie,
M. M. Glazov,
B. Urbaszek
Abstract:
The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct…
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The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct comparison between transitions in optical spectra with different oscillator strength more challenging. Here we reveal in reflectivity and in photoluminescence excitation spectroscopy the presence of excited states of the A-exciton in MoS2 monolayers encapsulated in hBN layers of calibrated thickness, allowing to extrapolate an exciton binding energy of about 220 meV. We theoretically reproduce the energy separations and oscillator strengths measured in reflectivity by combining the exciton resonances calculated for a screened two-dimensional Coulomb potential with transfer matrix calculations of the reflectivity for the van der Waals structure. Our analysis shows a very different evolution of the exciton oscillator strength with principal quantum number for the screened Coulomb potential as compared to the ideal two-dimensional hydrogen model.
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Submitted 5 December, 2017;
originally announced December 2017.
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Electron and hole g-factors and spin dynamics of negatively charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells
Authors:
Elena V. Shornikova,
Louis Biadala,
Dmitri R. Yakovlev,
Donghai H. Feng,
Victor F. Sapega,
Nathan Flipo,
Aleksandr A. Golovatenko,
Marina A. Semina,
Anna V. Rodina,
Anatolie A. Mitioglu,
Mariana V. Ballottin,
Peter C. M. Christianen,
Yuri G. Kusrayev,
Michel Nasilowski,
Benoit Dubertret,
Manfred Bayer
Abstract:
We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively…
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We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively charged so that their photoluminescence is dominated by radiative recombination of negatively charged excitons (trions). Electron g-factor of 1.68 is measured and heavy-hole g-factor varying with increasing magnetic field from -0.4 to -0.7 is evaluated. Hole g-factors for two-dimensional structures are calculated for various hole confining potentials for cubic- and wurtzite lattice in CdSe core. These calculations are extended for various quantum dots and nanoplatelets based on II-VI semiconductors. We developed a magneto-optical technique for the quantitative evaluation of the nanoplatelets orientation in ensemble.
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Submitted 2 October, 2017;
originally announced October 2017.
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Scaling laws of Rydberg excitons
Authors:
J. Heckötter,
M. Freitag,
D. Fröhlich,
M. Aßmann,
M. Bayer,
M. A. Semina,
M. M. Glazov
Abstract:
Rydberg atoms have attracted considerable interest due to their huge interaction among each other and with external fields. They demonstrate characteristic scaling laws in dependence on the principal quantum number $n$ for features such as the magnetic field for level crossing. While bearing striking similarities to Rydberg atoms, fundamentally new insights may be obtained for Rydberg excitons, as…
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Rydberg atoms have attracted considerable interest due to their huge interaction among each other and with external fields. They demonstrate characteristic scaling laws in dependence on the principal quantum number $n$ for features such as the magnetic field for level crossing. While bearing striking similarities to Rydberg atoms, fundamentally new insights may be obtained for Rydberg excitons, as the crystal environment gives easy optical access to many states within an exciton multiplet. Here we study experimentally and theoretically the scaling of several characteristic parameters of Rydberg excitons with $n$. From absorption spectra in magnetic field we find for the first crossing of levels with adjacent principal quantum numbers a $B_r \propto n^{-4}$ dependence of the resonance field strength, $B_r$, due to the dominant paramagnetic term unlike in the atomic case where the diamagnetic contribution is decisive. By contrast, in electric field we find scaling laws just like for Rydberg atoms. The resonance electric field strength scales as $E_r \propto n^{-5}$. We observe anticrossings of the states belonging to multiplets with different principal quantum numbers. The energy splittings at the avoided crossings scale as $n^{-4}$ which we relate to the crystal specific deviation of the exciton Hamiltonian from the hydrogen model. We observe the exciton polarizability in the electric field to scale as $n^7$. In magnetic field the crossover field strength from a hydrogen-like exciton to a magnetoexciton dominated by electron and hole Landau level quantization scales as $n^{-3}$. The ionization voltages demonstrate a $n^{-4}$ scaling as for atoms. The width of the absorption lines remains constant before dissociation for high enough $n$, while for small $n \lesssim 12$ an exponential increase with the field is found. These results are in excellent agreement with theoretical calculations.
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Submitted 4 April, 2017;
originally announced April 2017.
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High resolution study of the yellow excitons in Cu$_2$O subject to an electric field
Authors:
J. Heckötter,
M. Freitag,
D. Fröhlich,
M. Aßmann,
M. Bayer,
M. A. Semina,
M. M. Glazov
Abstract:
We have used high resolution transmission spectroscopy to study the exciton level spectrum in Cu$_2$O subject to a longitudinal external electric field, i.e., in the geometry where the transmitted light is propagating along the field direction. Different experimental configurations given by the field orientation relative to the crystal and the light polarization have been explored. We focus on the…
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We have used high resolution transmission spectroscopy to study the exciton level spectrum in Cu$_2$O subject to a longitudinal external electric field, i.e., in the geometry where the transmitted light is propagating along the field direction. Different experimental configurations given by the field orientation relative to the crystal and the light polarization have been explored. We focus on the range of small principal quantum numbers $n \leq 7$. The number of exciton states belonging to a particular principal quantum number increases with $n$, leading to an enhanced complexity of the spectra. Still, in particular for $n = 3 \ldots 5$ a spectral separation of the different lines is feasible and identification as well as assignment of the dominant state character are possible. We find a strong dependence of the spectra on the chosen light propagation direction and polarization configuration, reflecting the inadequacy of the hydrogen model for describing the excitons. With increasing the field excitonic states with different parity become mixed, leading to optical activation of states that are dark in zero field. As compared with atoms, due to the reduced Rydberg energy states with different $n$ can be brought into resonance in the accessible electric field strength range. When this occurs, we observe mostly crossing of levels within the experimental accuracy showing that the electron and hole motion remains regular. The observed features are well described by detailed calculations accounting for the spin-orbit coupling, the cubic anisotropy effects, and the symmetry-imposed optical selection rules.
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Submitted 6 January, 2017; v1 submitted 17 October, 2016;
originally announced October 2016.
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Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
Authors:
V. V. Belykh,
D. R. Yakovlev,
J. J. Schindler,
E. A. Zhukov,
M. A. Semina,
M. Yacob,
J. P. Reithmaier,
M. Benyoucef,
M. Bayer
Abstract:
A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $μ$m (around 0.8 eV photon energy) is performed by time-resolved pump-probe ellipticity technique using a superconducting vector magnet. All components of the $g$-factor tensors are measured, including their…
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A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $μ$m (around 0.8 eV photon energy) is performed by time-resolved pump-probe ellipticity technique using a superconducting vector magnet. All components of the $g$-factor tensors are measured, including their spread in the quantum dot (QD) ensemble. Surprisingly, the electron $g$ factor shows a large anisotropy changing from $g_{\mathrm{e},x}= -1.63$ to $g_{\mathrm{e},z}= -2.52$ between directions perpendicular and parallel to the dot growth axis, respectively, at an energy of 0.82 eV. The hole $g$-factor anisotropy at this energy is even stronger: $|g_{\text{h},x}|= 0.64$ and $|g_{\text{h},z}|= 2.29$. On the other hand, the in-plane anisotropies of electron and hole $g$ factors are small. The pronounced out-of-plane anisotropy is also observed for the spread of the $g$ factors, determined from the spin dephasing time. The hole longitudinal $g$ factors are described with a theoretical model that allows us to estimate the QD parameters. We find that the QD height-to-diameter ratio increases while the indium composition decreases with increasing QD emission energy.
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Submitted 12 March, 2016; v1 submitted 11 December, 2015;
originally announced December 2015.
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Ground state of the holes localized in II-VI quantum dots with Gaussian potential profiles
Authors:
M. A. Semina,
A. A. Golovatenko,
A. V. Rodina
Abstract:
We report on the theoretical study of the hole states in II-IV quantum dots of a spherical and ellipsoidal shape, described by a smooth potential confinement profiles, that can be modelled by a Gaussian functions in all three dimensions. The universal dependencies of the hole energy, $g$-factor and localization length on a quantum dot barrier height, as well as the ratio of effective masses of the…
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We report on the theoretical study of the hole states in II-IV quantum dots of a spherical and ellipsoidal shape, described by a smooth potential confinement profiles, that can be modelled by a Gaussian functions in all three dimensions. The universal dependencies of the hole energy, $g$-factor and localization length on a quantum dot barrier height, as well as the ratio of effective masses of the light and heavy holes are presented for the spherical quantum dots. The splitting of the four-fold degenerate ground state into two doublets is derived for anisotropic (oblate or prolate) quantum dots. Variational calculations are combined with numerical ones in the framework of the Luttinger Hamiltonian. Constructed trial functions are optimized by comparison with the numerical results. The effective hole $g$-factor is found to be independent on the quantum dot size and barrier height and is approximated by simple universal expression depending only on the effective mass parameters. The results can be used for interpreting and analyzing experimental spectra measured in various structures with the quantum dots of different semiconductor materials.
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Submitted 2 February, 2016; v1 submitted 1 December, 2015;
originally announced December 2015.
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Observation of high angular momentum excitons in cuprous oxide
Authors:
J. Thewes,
J. Heckötter,
T. Kazimierczuk,
M. Aßmann,
D. Fröhlich,
M. Bayer,
M. A. Semina,
M. M. Glazov
Abstract:
The recent observation of dipole-allowed $P$-excitons up to principal quantum numbers of $n=25$ in cuprous oxide has given insight into exciton states with unprecedented spectral resolution. While so far the exciton description as a hydrogen-like complex has been sufficient for cubic crystals, we demonstrate here distinct deviations: The breaking of rotational symmetry leads to mixing of high angu…
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The recent observation of dipole-allowed $P$-excitons up to principal quantum numbers of $n=25$ in cuprous oxide has given insight into exciton states with unprecedented spectral resolution. While so far the exciton description as a hydrogen-like complex has been sufficient for cubic crystals, we demonstrate here distinct deviations: The breaking of rotational symmetry leads to mixing of high angular momentum $F$- and $H$-excitons with the $P$-excitons so that they can be observed in absorption. The $F$-excitons show a three-fold splitting that depends systematically on $n$, in agreement with theoretical considerations. From detailed comparison of experiment and theory we determine the cubic anisotropy parameter of the Cu$_2$O valence band.
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Submitted 18 March, 2015;
originally announced March 2015.
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Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions
Authors:
C. Zoth,
P. Olbrich,
P. Vierling,
K. -M. Dantscher,
V. V. Bel'kov,
M. A. Semina,
M. M. Glazov,
L. E. Golub,
D. A. Kozlov,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
S. D. Ganichev
Abstract:
We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a…
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We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.
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Submitted 7 July, 2014; v1 submitted 4 July, 2014;
originally announced July 2014.
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Spin noise of exciton-polaritons in microcavities
Authors:
M. M. Glazov,
M. A. Semina,
E. Ya. Sherman,
A. V. Kavokin
Abstract:
We develop a theory of spin fluctuations of exciton-polaritons in a semiconductor microcavity under the non-resonant unpolarized pum**. It is shown that the corresponding spin noise is sensitive to the scattering rates in the system, occupation of the ground state, statistics of polaritons, and interactions. The spin noise spectrum drastically narrows in the polariton lasing regime due to format…
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We develop a theory of spin fluctuations of exciton-polaritons in a semiconductor microcavity under the non-resonant unpolarized pum**. It is shown that the corresponding spin noise is sensitive to the scattering rates in the system, occupation of the ground state, statistics of polaritons, and interactions. The spin noise spectrum drastically narrows in the polariton lasing regime due to formation of a polariton condensate, while its shape can become non-Lorentzian owing to interaction-induced spin decoherence.
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Submitted 17 July, 2013; v1 submitted 26 February, 2013;
originally announced February 2013.
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Coherence expansion and polariton condensate formation in a semiconductor microcavity
Authors:
V. V. Belykh,
N. N. Sibeldin,
V. D. Kulakovskii,
M. M. Glazov,
M. A. Semina,
C. Schneider,
S. Höfling,
M. Kamp,
A. Forchel
Abstract:
The dynamics of the expansion of the first order spatial coherence g(1) for a polariton system in a high-Q GaAs microcavity was investigated on the basis of Young's double slit experiment under 3 ps pulse excitation at the conditions of polariton Bose-Einstein condensation. It was found that in the process of condensate formation the coherence expands with a constant velocity of about 10^8 cm/s. T…
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The dynamics of the expansion of the first order spatial coherence g(1) for a polariton system in a high-Q GaAs microcavity was investigated on the basis of Young's double slit experiment under 3 ps pulse excitation at the conditions of polariton Bose-Einstein condensation. It was found that in the process of condensate formation the coherence expands with a constant velocity of about 10^8 cm/s. The measured coherence is smaller than that in thermally equilibrium system during the growth of condensate density and well exceeds it at the end of condensate decay. The onset of spatial coherence is governed by polariton relaxation while condensate amplitude and phase fluctuations are not suppressed.
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Submitted 17 April, 2013; v1 submitted 25 October, 2012;
originally announced October 2012.
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Spin current generation from Coulomb-Rashba interaction in semiconductor bilayers
Authors:
M. M. Glazov,
M. A. Semina,
S. M. Badalyan,
G. Vignale
Abstract:
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a…
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Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a charge current is driven in the other. This effect is symmetry-wise distinct from the spin Hall drag. The spin current is not, in general, perpendicular to the drive current.
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Submitted 3 May, 2011; v1 submitted 7 February, 2011;
originally announced February 2011.
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Spin relaxation in multiple (110) quantum wells
Authors:
M. M. Glazov,
M. A. Semina,
E. Ya. Sherman
Abstract:
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very…
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We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very strong enhancement of the spin relaxation time. In a degenerate electron gas the Pauli blocking suppresses the electron-electron collisions, and the leading spin relaxation mechanism comes from the field of donors. If the electron gas is nondegenerate the electron-electron collisions and scattering by the ionized donors give similar contributions to the relaxation rate.
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Submitted 7 May, 2010; v1 submitted 7 November, 2009;
originally announced November 2009.