Showing 1–1 of 1 results for author: Semenchinsky, S G
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Magnetotransport with two occupied subbands in a Si(100) inversion layer
Authors:
S. G. Semenchinsky,
L. Smrcka,
J. Stehno
Abstract:
We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature dam** of the second series oscillations indicates that the second occupied subband belongs to the first energy level of the fourfold-degenerate ladder $0'$. Samp…
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We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature dam** of the second series oscillations indicates that the second occupied subband belongs to the first energy level of the fourfold-degenerate ladder $0'$. Samples with two occupied subbans exhibit a strong anomalous negative magnetoresitance, reaching $\rm \approx 25 \%$ of a zero field value at $B =$ 12 T. The resistance decrease is more pronounced for lower temperatures and higher electron concentrations. We explain this behaviour by an increase of the second subband mobility due to the freezing-out of the scattering of $0'$ electrons. Based on the measured periods of SdH oscillations, we conclude that the electrons are distributed inhomogeneously beneath the sample gate.
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Submitted 31 July, 1995;
originally announced July 1995.
