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Purcell Enhancement of Spontaneous Emission of a Quantum Emitter on a Waveguide
Authors:
Sushma Gali,
Komal Sharma,
Jaydeep Kumar Basu,
Shankar Kumar Selvaraja
Abstract:
We investigate the effect of a waveguide on an emitter spontaneous emission in its vicinity. The impact of various possible orientations of an emitter with respect to the waveguide surface is studied through simulations and compared with experimental demonstration. Quantum emitters are dip coated on waveguides and Purcell enhancement and a decrease in the lifetime of the emitter are observed. This…
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We investigate the effect of a waveguide on an emitter spontaneous emission in its vicinity. The impact of various possible orientations of an emitter with respect to the waveguide surface is studied through simulations and compared with experimental demonstration. Quantum emitters are dip coated on waveguides and Purcell enhancement and a decrease in the lifetime of the emitter are observed. This study serves as a proof of concept for the Purcell effect offered by waveguides and helps ineffectively estimate the efficiency of waveguide-based evanescent sensors and quantum photonic applications
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Submitted 9 July, 2024;
originally announced July 2024.
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DFT analysis and demonstration of enhanced clamped Electro-Optic tensor by strain engineering in PZT
Authors:
Suraj,
Shankar Kumar Selvaraja
Abstract:
We report $\approx$400\% enhancement in PZT Pockels coefficient on DFT simulation of lattice strain due to phonon mode softening.The simulation showed a relation between the rumpling and the Pockels coefficient divergence that happens at -8\% and 25\% strain developed in PZT film.The simulation was verified experimentally by RF sputter deposited PZT film on Pt/SiO$_2$/Si layer.The strain developed…
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We report $\approx$400\% enhancement in PZT Pockels coefficient on DFT simulation of lattice strain due to phonon mode softening.The simulation showed a relation between the rumpling and the Pockels coefficient divergence that happens at -8\% and 25\% strain developed in PZT film.The simulation was verified experimentally by RF sputter deposited PZT film on Pt/SiO$_2$/Si layer.The strain developed in PZT varied from -0.04\% for film annealed at 530\degree C to -0.21\% for 600\degree C annealing temperature.The strain was insensitive to RF power with a value of -0.13\% for power varying between 70-130 W. Pockels coefficient enhancement was experimentally confirmed by Si Mach Zehnder interferometer loaded with PZT and probed with the co-planar electrode.An enhancement of $\approx$300\% in Pockels coefficient was observed from 2-8 pm/V with strain increasing from -0.04\% to -0.21\%. To the best of our knowledge, this is the first time study and demonstration of strain engineering on Pockels coefficient of PZT using DFT simulation, film deposition, and photonic device fabrication.
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Submitted 30 May, 2023;
originally announced May 2023.
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3-D poling and drive mechanism for high-speed PZT-on-SOI Electro-Optic modulator using remote Pt buffered growth
Authors:
Suraj,
Shankar Kumar Selvaraja
Abstract:
In this work, we have demonstrated a novel method to increase the electro-optic interaction in an intensity modulator at the C-band by optimizing the growth methodology of PZT with the metal (Ti/Pt) as a base material and the PZT poling architecture. Here, we have used a patterned Pt layer for PZT deposition instead of a buffer layer. By optimizing the PZT growth process, we have been able to do p…
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In this work, we have demonstrated a novel method to increase the electro-optic interaction in an intensity modulator at the C-band by optimizing the growth methodology of PZT with the metal (Ti/Pt) as a base material and the PZT poling architecture. Here, we have used a patterned Pt layer for PZT deposition instead of a buffer layer. By optimizing the PZT growth process, we have been able to do poling of the fabricated PZT film in an arbitrary direction as well as have achieved an enhanced electro-optic interaction, leading to a DC spectrum shift of 304 pm/V and a Vπ Lπ value of 0.6 V-cm on a Si-based MZI. For an electro-optic modulator, we are reporting the best values of DC spectrum shift and Vπ Lπ using perovskite as an active material. The high-speed measurement has yielded a tool-limited bandwidth of > 12GHz. The extrapolated bandwidth calculated using the slope of the modulation depth is 45 GHz. We also show via simulation an optimized gap of 4.5 μm and a PZT thickness of 1 μm that gives us a less than 1 V-dB.
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Submitted 30 May, 2023;
originally announced May 2023.
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Highly Oriented PZT Platform for Polarization-Independent Photonic Integrated Circuit and Enhanced Efficiency Electro-Optic Modulation
Authors:
Suraj,
Shankar Kumar Selvaraja
Abstract:
We demonstrate, for the first time, sputtered PZT as a platform for the development of Si-based photonic devices such as rings, MZI, and electro-optic modulators. We report the optimization of PZT on MgO(002) substrate to obtain highly oriented PZT film oriented towards the (100) plane with a surface roughness of 2 nm. Si gratings were simulated for TE and TM mode with an efficiency of -2.2 dB/cou…
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We demonstrate, for the first time, sputtered PZT as a platform for the development of Si-based photonic devices such as rings, MZI, and electro-optic modulators. We report the optimization of PZT on MgO(002) substrate to obtain highly oriented PZT film oriented towards the (100) plane with a surface roughness of 2 nm. Si gratings were simulated for TE and TM mode with an efficiency of -2.2 dB/coupler -3 dB/coupler respectively with a polarization insensitive efficiency of 50% for both TE and TM mode. Si grating with an efficiency of around -10 dB/coupler and a 6 dB bandwidth of 30 nm was fabricated. DC Electro-optic characterization for MZI yielded a spectrum shift of 71 pm/V at the c-band.
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Submitted 30 May, 2023;
originally announced May 2023.
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Polarization Independent Grating in GaN-on-Sapphire Photonic Integrated Circuit
Authors:
Suraj,
Shashwat Rathkanthiwar,
Srinivasan Raghavan,
Shankar Kumar Selvaraja
Abstract:
In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-Sapphire platform. We provide a detailed demonstration of the material characterization, device simulation, and experimental results. We achieve a grating coupler efficiency of -5.2 dB/coupler with a 1dB and 3dB bandwidth of 40 nm and 80 nm, respectively. W…
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In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-Sapphire platform. We provide a detailed demonstration of the material characterization, device simulation, and experimental results. We achieve a grating coupler efficiency of -5.2 dB/coupler with a 1dB and 3dB bandwidth of 40 nm and 80 nm, respectively. We measure a single-mode waveguide loss of -6 dB/cm. The losses measured here are the lowest in a GaN-on-Sapphire photonic circuit. This demonstration provides opportunities for the development of on-chip linear and non-linear optical processes using the GaN-on-Sapphire platform. To the best of our knowledge, this is the first demonstration of an integrated photonic device using a GaN HEMT stack with 2D electron gas.
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Submitted 25 May, 2023;
originally announced May 2023.
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Sputter-deposited PZT-on-Silicon Optimization for C-band Electro-Optic Modulation
Authors:
Suraj,
Shankar Kumar Selvaraja
Abstract:
Ferroelectric materials exhibit interesting electric, mechanical and optical properties. Particularly,tin-film lead zirconium titanate (PZT) has been used as a standard piezo-electric material in micro-electro-mechanical systems. Interestingly, it has one of the highest electro-optic properties that can be exploited to make high-speed on-chip light modulators. In this work, we demonstrate sputter-…
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Ferroelectric materials exhibit interesting electric, mechanical and optical properties. Particularly,tin-film lead zirconium titanate (PZT) has been used as a standard piezo-electric material in micro-electro-mechanical systems. Interestingly, it has one of the highest electro-optic properties that can be exploited to make high-speed on-chip light modulators. In this work, we demonstrate sputter-deposited PZT on silicon-on-insulator wafers. Desired phase and film morphology is achieved through process and buffer layer engineering. We present results on buffer layer screening between MgO, TiO2 and Pt. MgO is identified as a suitable buffer layer from an optical and film growth perspective. We achieve a measured coercive field for PZT/MgO and PZT/Pt film is 50 kV/cm and 30 kV/cm, respectively. We use a PZT-loaded ring modulator with an electro-optic response of 14 pm/V.
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Submitted 5 May, 2023;
originally announced May 2023.
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Sandwiched Hybrid Waveguide Platform for Integrated Photonics Application
Authors:
Rahul K Dash,
Shankar Kumar Selvaraja
Abstract:
We propose and demonstrate a hybrid waveguide platform using layered amorphous silicon and silicon nitride. The waveguide offers more degrees of freedom to design waveguides with desired confinement, effective index and polarization birefringence. Unlike single core material, the proposed waveguide offers design flexibility, and light confinement in the layers is polarization-dependent. We present…
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We propose and demonstrate a hybrid waveguide platform using layered amorphous silicon and silicon nitride. The waveguide offers more degrees of freedom to design waveguides with desired confinement, effective index and polarization birefringence. Unlike single core material, the proposed waveguide offers design flexibility, and light confinement in the layers is polarization-dependent. We present a detailed waveguide design and analysis of efficient fiber-chip grating couplers with a coupling efficiency of -3.27 dB and -8 dB for $TE$ and $TM$ polarization, respectively. The couplers offer a 3dB bandwidth of 100 nm. Furthermore, we demonstrate excitation of TE and TM modes exploiting the polarization-dependent confinement using thermo-optic characteristics of a ring resonator.
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Submitted 3 April, 2023;
originally announced April 2023.
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On-Chip Chemical Sensing Using Double-slot Silicon Waveguide
Authors:
Sushma Gali,
Akshay Keloth,
Shankar Kumar Selvaraja
Abstract:
In this paper, we present refractive index measurement using a double-slot silicon waveguide-based Mach Zehnder interferometer. We present a double-slot waveguide that offers the best sensitivity and limit of detection compared to wire and single-slot waveguides. We demonstrate ultra-low loss coupling between a single-mode waveguide and a double-slot waveguide and experimental proof for double-slo…
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In this paper, we present refractive index measurement using a double-slot silicon waveguide-based Mach Zehnder interferometer. We present a double-slot waveguide that offers the best sensitivity and limit of detection compared to wire and single-slot waveguides. We demonstrate ultra-low loss coupling between a single-mode waveguide and a double-slot waveguide and experimental proof for double-slot excitation. The double-slot waveguide is used to demonstrate a highly sensitive concentration sensor. An unbalanced Mach-Zehnder is used as the sensor device to demonstrate concentrations of Potassium Chloride in deionized water. A sensitivity of 700 nm/RIU and a limit of detection (LOD) of 7.142e^-6 RIU are achieved experimentally. To the best of our knowledge, the demonstrated sensitivity is the highest for an on-chip guided waveguide sensing scheme.
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Submitted 9 February, 2023;
originally announced February 2023.
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Linear and Nonlinear Characterization of broadband integrated Si-rich silicon nitride racetrack ring resonator for on-chip applications
Authors:
Partha Mondal,
Venkatachalam P,
Radhakant Singh,
Sneha Shelwade,
Gali Sushma,
Shankar K Selvaraja
Abstract:
We demonstrate the linear and nonlinear characterization of plasma-enhanced chemical vapor deposited silicon-rich silicon nitride (SRSN) racetrack ring resonator for on-chip application within the telecommunication wavelength range. The SRN waveguide parameters are optimized by employing the refractive index profile measured by ellipsometry to achieve flat dispersion in the telecom band. Furthermo…
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We demonstrate the linear and nonlinear characterization of plasma-enhanced chemical vapor deposited silicon-rich silicon nitride (SRSN) racetrack ring resonator for on-chip application within the telecommunication wavelength range. The SRN waveguide parameters are optimized by employing the refractive index profile measured by ellipsometry to achieve flat dispersion in the telecom band. Furthermore, we measure the thermo-optic coefficient (TOC) of the micro-resonator by analyzing the temperature-dependent transmission spectra and assessing it to be \(3.2825\) $\times$ \(10^{-5}\) \(^o{} C^{-1}\). Additionally, we perform power-dependent transmission spectra to investigate the effect of local heating and nonlinear absorption. The power-dependent transmission spectra exhibit a blue-shifting of the resonance peak in the visible and near-IR regions, which indicates the presence of nonlinear losses in that range. The power-dependent transmission spectra almost remain unchanged in the telecom band, revealing the absence of nonlinear losses and excellent thermal stability in that wavelength range. Our experimental results reveal that the SRSN-based structure can be employed potentially to realize linear and nonlinear applications in the telecom band.
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Submitted 25 September, 2022;
originally announced September 2022.
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Independently reconfigurable internal loss and resonance-shift in an interferometer-embedded optical cavity
Authors:
Aneesh Dash,
Viphretuo Mere,
S. K. Selvaraja,
A. K. Naik
Abstract:
Optical cavities find diverse uses in lasers, frequency combs, optomechanics, and optical signal processors. Complete reconfigurability of the resonant frequency as well as the loss enables development of generic field programmable cavities for achieving the desired performance in these applications. Conventional reconfigurable cavities are generally limited to specific material platforms or speci…
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Optical cavities find diverse uses in lasers, frequency combs, optomechanics, and optical signal processors. Complete reconfigurability of the resonant frequency as well as the loss enables development of generic field programmable cavities for achieving the desired performance in these applications. Conventional reconfigurable cavities are generally limited to specific material platforms or specific optical tuning methods and require sophisticated fabrication. Furthermore, the tuning of the loss is coupled to the resonance-shift in the cavity. We propose and demonstrate a simple and generic interferometer in a cavity structure that enables quasiperiodic modification of the internal cavity loss and the cavity resonance to reconfigure the Q-factor, transmission characteristics, and group delay of the hybrid cavity, with simple tuning of the optical phase in the interferometer. We also demonstrate methods to decouple the tuning of the loss from the resonance-shift, that enables resonance-locked reconfigurability. This structure also enables resonance-shift to both shorter and longer wavelengths using the same phase-tuning technique, which is challenging to achieve in conventional reconfigurable cavities. These devices can be implemented in any guided-wave platform (on-chip or fiber-optic) with potential applications in programmable photonics and reconfigurable optomechanics.
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Submitted 7 November, 2022; v1 submitted 22 June, 2021;
originally announced June 2021.
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Compact Ring Resonator Enhanced Silicon-MSM Photodetector in SiN-on-SOI Platform
Authors:
Avijit Chatterjee,
Saumitra Sam,
Sujit Kumar Sikdar,
Shankar Kumar Selvaraja
Abstract:
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $μm$ long device. High responsivity is achieved by integrating the detector in a silicon nitride ring resonator. The resonance offers 100X responsivity improvement over a single-pas…
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We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $μm$ long device. High responsivity is achieved by integrating the detector in a silicon nitride ring resonator. The resonance offers 100X responsivity improvement over a single-pass photodetector due to cavity enhancement. We also present a detailed study of the high-speed response of the cavity and single-pass detector. We report an electro-optic bandwidth of 7.5 GHz measured using a femtosecond optical excitation. To the best of our knowledge, we report for the first time silicon nitride resonator integrated Si-MSM detector in SiN-SOI platform.
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Submitted 5 July, 2020;
originally announced July 2020.
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Alignment Tolerant Broadband Compact Taper for Low-Loss Coupling to a Silicon-on-Insulator Photonic Wire Waveguide
Authors:
Purnima Sethi,
Shankar Kumar Selvaraja
Abstract:
We experimentally demonstrate a broadband, fabrication tolerant, CMOS compatible compact silicon waveguide taper (34.2 um) in silicon-on-insulator wire waveguides. The taper works on multi-mode interference along the length of the taper. A single taper design has a broadband operation with coupling efficiency >70% over 700 nm that can be used in O, C and L-band. The compact taper is highly toleran…
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We experimentally demonstrate a broadband, fabrication tolerant, CMOS compatible compact silicon waveguide taper (34.2 um) in silicon-on-insulator wire waveguides. The taper works on multi-mode interference along the length of the taper. A single taper design has a broadband operation with coupling efficiency >70% over 700 nm that can be used in O, C and L-band. The compact taper is highly tolerant to fabrication variations; >100 nm change in the taper and end waveguide width varies the taper transmission by <5%. The footprint of the device i.e. taper along with the linear gratings is ~ 442 m2; i.e. 11.5X smaller than the adiabatic taper. The taper with linear gratings provides comparable coupling efficiency as standardly used focusing gratings. We have also compared the translational and rotational alignment tolerance of the focusing grating with the linear grating.
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Submitted 27 November, 2019;
originally announced December 2019.
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Mitigation of carrier induced optical bistability in silicon ring resonators
Authors:
Vadivukkarasi Jeyaselvan,
Shankar Kumar Selvaraja
Abstract:
We present a detailed study of electrical and optical generated free carrier on the spectral characteristics of a silicon microring modulator. The spectral distortion generated due to thermal and free carriers is presented, and the mechanism for mitigation is also presented. We observed that two-photon induced nonlinearity could be addressed by operating the modulator at suitable bias points. Furt…
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We present a detailed study of electrical and optical generated free carrier on the spectral characteristics of a silicon microring modulator. The spectral distortion generated due to thermal and free carriers is presented, and the mechanism for mitigation is also presented. We observed that two-photon induced nonlinearity could be addressed by operating the modulator at suitable bias points. Furthermore, by applying small-signal drive the spectral distortion can be restored. We also present the effect of optical power and drive signal limit on the spectral characteristics. The study allows one to identify suitable device performance and operating conditions to utilize silicon ring modulator for optical signal processing.
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Submitted 12 November, 2019; v1 submitted 4 November, 2019;
originally announced November 2019.
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High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom
Authors:
Avijit Chatterjee,
Saumitra,
Sujit Kumar Sikdar,
Shankar Kumar Selvaraja
Abstract:
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating c…
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We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterisation of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.
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Submitted 11 April, 2019;
originally announced July 2019.
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Generation of tunable, high repetition rate optical frequency combs using on-chip silicon modulators
Authors:
Kp Nagarjun,
Vadivukarassi Jeyaselvan,
Shankar Kumar Selvaraja,
V R Supradeepa
Abstract:
We experimentally demonstrate tunable, highly-stable frequency combs with high repetition-rates using a single, charge injection based silicon PN modulator. In this work, we demonstrate combs in the C-band with over 8 lines in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also demonstrate throu…
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We experimentally demonstrate tunable, highly-stable frequency combs with high repetition-rates using a single, charge injection based silicon PN modulator. In this work, we demonstrate combs in the C-band with over 8 lines in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also demonstrate through simulations the potential for bandwidth scaling using an optimized silicon PIN modulator. We find that, the time varying free carrier absorption due to carrier injection, an undesirable effect in data modulators, assists here in enhancing flatness in the generated combs.
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Submitted 30 April, 2018;
originally announced May 2018.
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On-Chip Optical Transduction Scheme for Graphene Nano-Electro-Mechanical Systems in Silicon-Photonic Platform
Authors:
Aneesh Dash,
S. K. Selvaraja,
A. K. Naik
Abstract:
We present a scheme for on-chip optical transduction of strain and displacement of Graphene-based Nano-Electro-Mechanical Systems (NEMS). A detailed numerical study on the feasibility of three silicon-photonic integrated circuit configurations is presented: Mach-Zehnder Interferometer(MZI), micro-ring resonator and ring-loaded MZI. An index-sensing based technique using a Mach-Zehnder Interferomet…
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We present a scheme for on-chip optical transduction of strain and displacement of Graphene-based Nano-Electro-Mechanical Systems (NEMS). A detailed numerical study on the feasibility of three silicon-photonic integrated circuit configurations is presented: Mach-Zehnder Interferometer(MZI), micro-ring resonator and ring-loaded MZI. An index-sensing based technique using a Mach-Zehnder Interferometer loaded with a ring resonator with a moderate Q-factor of 2400 can yield a sensitivity of 28 fm/sqrt(Hz), and 6.5E-6 %/sqrt(Hz) for displacement and strain respectively. Though any phase sensitive integrated photonic device could be used for optical transduction, here we show that optimal sensitivity is achievable by combining resonance with phase sensitivity.
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Submitted 3 January, 2018; v1 submitted 3 January, 2018;
originally announced January 2018.
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Compact Broadband Low-Loss Taper for Coupling to a Silicon Nitride Photonic Wire
Authors:
Purnima Sethi,
Rakshitha Kallege,
Anubhab Haldar,
Shankar Kumar Selvaraja
Abstract:
We demonstrate an ultra-compact waveguide taper in Silicon Nitride platform. The proposed taper provides a coupling-efficiency of 95% at a length of 19.5 um in comparison to the standard linear taper of length 50 um that connects a 10 um wide waveguide to a 1 um wide photonic wire. The taper has a spectral response > 75% spanning over 800 nm and resilience to fabrication variations; >200 nm change…
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We demonstrate an ultra-compact waveguide taper in Silicon Nitride platform. The proposed taper provides a coupling-efficiency of 95% at a length of 19.5 um in comparison to the standard linear taper of length 50 um that connects a 10 um wide waveguide to a 1 um wide photonic wire. The taper has a spectral response > 75% spanning over 800 nm and resilience to fabrication variations; >200 nm change in taper and end waveguide width varies transmission by <5%. We experimentally demonstrate taper insertion loss of <0.1 dB/transition for a taper as short as 19.5 um, and reduces the footprint of the photonic device by 50.8% compared to the standard adiabatic taper. To the best of our knowledge, the proposed taper is the shortest waveguide taper ever reported in Silicon Nitride.
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Submitted 27 November, 2017;
originally announced November 2017.
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All-optical wavelength multicasting in quadruple resonance-split coupled Silicon microring cavity
Authors:
Awanish Pandey,
Shankar Kumar Selvaraja
Abstract:
We demonstrate an all-optical four-channel wavelength multicasting in a coupled Silicon microring resonator system. The scheme is based on two-photon absorption induced free carrier dispersion in Silicon. The coupled cavity facilitates resonance splitting that is utilized as individual channels for multicasting. Using the split resonances, we achieve an aggregate multicasted data rate of 48 Gbps (…
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We demonstrate an all-optical four-channel wavelength multicasting in a coupled Silicon microring resonator system. The scheme is based on two-photon absorption induced free carrier dispersion in Silicon. The coupled cavity facilitates resonance splitting that is utilized as individual channels for multicasting. Using the split resonances, we achieve an aggregate multicasted data rate of 48 Gbps (4X12 Gbps). Moreover, we also present a detailed analysis and performance of the multicasting architecture.
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Submitted 27 November, 2017;
originally announced November 2017.
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Efficient and Tunable Strip-to-Slot Fundamental Mode Coupling
Authors:
Viphretuo Mere,
Rakshitha Kallega,
Shankar Kumar Selvaraja
Abstract:
We present a novel photonic wire-to-slot waveguide coupler in SOI. The phase matching between a wire and slot mode is achieved using a mode transformer. The architecture consists of a balanced 50/50 power splitter and a tunable phase matched taper combiner forming a slot waveguide. We show a theoretical wire-to-slot coupling efficiency of 99 % is achievable and experimentally, we demonstrate a cou…
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We present a novel photonic wire-to-slot waveguide coupler in SOI. The phase matching between a wire and slot mode is achieved using a mode transformer. The architecture consists of a balanced 50/50 power splitter and a tunable phase matched taper combiner forming a slot waveguide. We show a theoretical wire-to-slot coupling efficiency of 99 % is achievable and experimentally, we demonstrate a coupling efficiency of 99 % in the 1550 nm band. Based on the coupling scheme, we also show excitation of a slot mode in a slotted ring resonator and verified the excitation through the thermo-optic response of the rings. We show a nearly athermal behaviour of a PMMA filled slot ring with a thermo-optic response of 12.8 pm/C compare to 43.5 pm/C for an air clad slot waveguide.
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Submitted 27 November, 2017;
originally announced November 2017.
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Thermo-optic coefficient measurement of liquids using silicon photonic microring resonators
Authors:
Prashanth R Prasad,
Shankar K Selvaraja,
Manoj Varma
Abstract:
On-chip measurement of thermo-optic coefficient (TOC) of samples along with on-chip temperature measurements can be used to compensate for thermal fluctuation induced noise in refractometry using integrated photonic sensors. In this article we demonstrate a device design and describe the method to extract TOCs of liquid samples using resonant wavelength shifts of a silicon microring resonator. The…
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On-chip measurement of thermo-optic coefficient (TOC) of samples along with on-chip temperature measurements can be used to compensate for thermal fluctuation induced noise in refractometry using integrated photonic sensors. In this article we demonstrate a device design and describe the method to extract TOCs of liquid samples using resonant wavelength shifts of a silicon microring resonator. The TOCs of three standard fluids; De-ionized water, Ethanol and Isopropanol, were determined using our sensor and show a good agreement with values reported in literature. A mechanism for tracking of on-chip temperature variations is also included for ensuring accuracy of TOC measurements. Potential applications of the demonstrated on-chip TOC sensor include improvements in accuracy of refractive index measurements and multiparametric analysis of biochemical analytes.
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Submitted 9 October, 2017;
originally announced October 2017.
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High-efficiency broad-bandwidth sub-wavelength grating based fibre-chip coupler in SOI
Authors:
Siddharth Nambiar,
Shankar Kumar Selvaraja
Abstract:
We report a comprehensive study on the performance of uniform and non-uniform based subwavelength grating couplers in Silicon-on-Insulator. The two performance metrics, coupling efficiency and bandwidth enhancement and trade-offs is presented. We also present, design parameters to achieve high-efficiency and broadband operation based on the detailed study of various loss mechanisms in the grating.…
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We report a comprehensive study on the performance of uniform and non-uniform based subwavelength grating couplers in Silicon-on-Insulator. The two performance metrics, coupling efficiency and bandwidth enhancement and trade-offs is presented. We also present, design parameters to achieve high-efficiency and broadband operation based on the detailed study of various loss mechanisms in the grating. Based on the detailed analysis subwavelength grating coupler designs with efficiency as high as 84 % with a 1 dB bandwidth of 50 nm and 98 % with a 44 nm 1 dB bandwidth is presented.
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Submitted 17 September, 2017;
originally announced October 2017.
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Tunable coupling-induced resonance splitting in self-coupled Silicon ring cavity with robust spectral characteristics
Authors:
Awanish Pandey,
Shankar Kumar Selvaraja
Abstract:
We propose and demonstrate a self-coupled microring resonator for resonance splitting by mutual mode coupling of cavity mode and counter-propagating mode in Silicon-on-Insulator platform The resonator is constructed with a self-coupling region that can excite counter-propagating mode. We experimentally study the effect of self-coupling on the resonance splitting, resonance extinction, and quality-…
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We propose and demonstrate a self-coupled microring resonator for resonance splitting by mutual mode coupling of cavity mode and counter-propagating mode in Silicon-on-Insulator platform The resonator is constructed with a self-coupling region that can excite counter-propagating mode. We experimentally study the effect of self-coupling on the resonance splitting, resonance extinction, and quality-factor evolution and stability. Based on the coupling, we achieve 72% of FSR splitting for a cavity with FSR 2.1 nm with < 5% variation in the cavity quality factor. The self-coupled resonance splitting shows highly robust spectral characteristic that can be exploited for sensing and optical signal processing.
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Submitted 12 June, 2017;
originally announced June 2017.
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Generation of correlated photons in hydrogenated amorphous-silicon waveguides
Authors:
S. Clemmen,
A. Perret,
S. K. Selvaraja,
W. Bogaerts,
D. van Thourhout,
R. Baets,
Ph. Emplit,
S. Massar
Abstract:
We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous- silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geome- try. In particular, we show that amorphous silicon has a higher nonlinearity and competes with crystalline silicon in spite of higher loss.
We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous- silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geome- try. In particular, we show that amorphous silicon has a higher nonlinearity and competes with crystalline silicon in spite of higher loss.
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Submitted 4 February, 2011;
originally announced February 2011.
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On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides
Authors:
Bart Kuyken,
Stéphane Clemmen,
Shankar Kumar Selvaraja,
Wim Bogaerts,
Dries Van Thourhout,
Philippe Emplit,
Serge Massar,
Gunther Roelkens,
Roel Baets
Abstract:
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.
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Submitted 4 February, 2011;
originally announced February 2011.
