Showing 1–39 of 39 results for author: Sellier, H

Selective area epitaxy of in-plane HgTe nanostrcutures on CdTe(001) substrate

Authors: Nicolas Chaize, Xavier Baudry, Pierre-Henri Jouneau, Eric Gautier, Jean-Luc Rouvière, Yves Deblock, Jimmy Xu, Maxime Berthe, Clément Barbot, Bruno Grandidier, Ludovic Desplanque, Hermann Sellier, Philippe Ballet

Abstract: Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular bea… ▽ More Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO$_{\mathrm{2}}$ mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the <$110$>, <$1\bar{\mathrm{1}}0$>, or <$100$> direction, the deposited thickness, and the growth temperature. Several micron long in-plane nanowires can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a growth temperature as low as $140$°C and growth rate up to $0.5$ ML/s. For <$110$> oriented nanowires, the center of the nanostructure exhibits a trapezoidal shape with {$111$}B facets and two grains on the sides, while <$1\bar{\mathrm{1}}0$> oriented nanowires show {$111$}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe nanowire. Measurements of the resistance with fourpoint scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements. △ Less

Submitted 11 July, 2024; originally announced July 2024.

Comments: 18 pages and 8 figures. Submitted to Nanotechnology

Electron qubits surfing on acoustic waves: review of recent progress

Authors: Junliang Wang, Hermann Edlbauer, Baptiste Jadot, Pierre-André Mortemousque, Shintaro Takada, Christopher Bäuerle, Hermann Sellier

Abstract: The displacement of a single electron enables exciting avenues for nanotechnology with vast application potential in quantum metrology, quantum communication and quantum computation. Surface acoustic waves (SAW) have proven itself as a surprisingly useful solution to perform this task over large distance with outstanding precision and reliability. Over the last decade, important milestones have be… ▽ More The displacement of a single electron enables exciting avenues for nanotechnology with vast application potential in quantum metrology, quantum communication and quantum computation. Surface acoustic waves (SAW) have proven itself as a surprisingly useful solution to perform this task over large distance with outstanding precision and reliability. Over the last decade, important milestones have been achieved bringing SAW-driven single-electron transport from first proof-of-principle demonstrations to accurate, highly-controlled implementations, such as coherent spin transport, charge-to-photon conversion, or antibunching of charge states. Beyond the well-established piezoelectric gallium-arsenide platform, first realisations of acousto-electronic transport have also been carried out on the surface of liquid helium. In this review article, we aim to keep track of this remarkable progress by explaining these recent achievements from basic principles, with an outlook on follow-up experiments and near-term applications. △ Less

Submitted 7 February, 2024; originally announced February 2024.

Suppression of Electromagnetic Crosstalk by Differential Excitation for SAW Generation

Authors: Shunsuke Ota, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera, Shintaro Takada

Abstract: Surface acoustic waves (SAWs) hold a vast potential in various fields such as spintronics, quantum acoustics, and electron-quantum optics, but an electromagnetic wave emanating from SAW generation circuits has often been a major hurdle. Here, we investigate a differential excitation method of interdigital transducers (IDTs) to generate SAWs while reducing the electromagnetic wave. The results show… ▽ More Surface acoustic waves (SAWs) hold a vast potential in various fields such as spintronics, quantum acoustics, and electron-quantum optics, but an electromagnetic wave emanating from SAW generation circuits has often been a major hurdle. Here, we investigate a differential excitation method of interdigital transducers (IDTs) to generate SAWs while reducing the electromagnetic wave. The results show that electromagnetic waves are suppressed by more than 90% in all directions. This suppression overcomes the operating limits and improves the scalability of SAW systems. Our results promise to facilitate the development of SAW-based applications in a wide range of research fields. △ Less

Submitted 24 December, 2023; originally announced December 2023.

Evidence for correlated electron pairs and triplets in quantum Hall interferometers

Authors: Wenmin Yang, David Perconte, Corentin Déprez, Kenji Watanabe, Takashi Taniguchi, Sylvain Dumont, Edouard Wagner, Frédéric Gay, Inès Safi, Hermann Sellier, Benjamin Sacépé

Abstract: Pairing of electrons is ubiquitous in electronic systems featuring attractive inter-electron interactions, as exemplified in superconductors. Counter-intuitively, it can also be mediated in certain circumstances by the repulsive Coulomb interaction alone. Quantum Hall (QH) Fabry-Pérot interferometers (FPIs) tailored in two-dimensional electron gas under a perpendicular magnetic field has been argu… ▽ More Pairing of electrons is ubiquitous in electronic systems featuring attractive inter-electron interactions, as exemplified in superconductors. Counter-intuitively, it can also be mediated in certain circumstances by the repulsive Coulomb interaction alone. Quantum Hall (QH) Fabry-Pérot interferometers (FPIs) tailored in two-dimensional electron gas under a perpendicular magnetic field has been argued to exhibit such unusual electron pairing seemingly without attractive interaction. Here, we show evidence in graphene QH FPIs revealing not only a similar electron pairing at bulk filling factor nu=2 but also an unforeseen emergence of electron tripling characterized by a fractional Aharonov-Bohm flux period h/3e (h is the Planck constant and e the electron charge) at nu=3. Leveraging a novel plunger-gate spectroscopy, we demonstrate that electron pairing (tripling) involves correlated charge transport on two (three) entangled QH edge channels. This spectroscopy indicates a quantum interference flux-periodicity determined by the sum of the phases acquired by the distinct QH edge channels having slightly different interfering areas. While recent theory invokes the dynamical exchange of neutral magnetoplasmons -- dubbed neutralons -- as mediator for electron pairing, our discovery of three entangled QH edge channels with apparent electron tripling defies understanding and introduces a new three-body problem for interacting fermions. △ Less

Submitted 22 December, 2023; originally announced December 2023.

On-Demand Single-Electron Source via Single-Cycle Acoustic Pulses

Authors: Shunsuke Ota, Junliang Wang, Hermann Edlbauer, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Arne Ludwig, Andreas D. Wieck, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera, Shintaro Takada

Abstract: Surface acoustic waves (SAWs) are a reliable solution to transport single electrons with precision in piezoelectric semiconductor devices. Recently, highly efficient single-electron transport with a strongly compressed single-cycle acoustic pulse has been demonstrated. This approach, however, requires surface gates constituting the quantum dots, their wiring, and multiple gate movements to load an… ▽ More Surface acoustic waves (SAWs) are a reliable solution to transport single electrons with precision in piezoelectric semiconductor devices. Recently, highly efficient single-electron transport with a strongly compressed single-cycle acoustic pulse has been demonstrated. This approach, however, requires surface gates constituting the quantum dots, their wiring, and multiple gate movements to load and unload the electrons, which is very time-consuming. Here, on the contrary, we employ such a single-cycle acoustic pulse in a much simpler way - without any quantum dot at the entrance or exit of a transport channel - to perform single-electron transport between distant electron reservoirs. We observe the transport of a solitary electron in a single-cycle acoustic pulse via the appearance of the quantized acousto-electric current. The simplicity of our approach allows for on-demand electron emission with arbitrary delays on a ns time scale. We anticipate that enhanced synthesis of the SAWs will facilitate electron-quantum-optics experiments with multiple electron flying qubits. △ Less

Submitted 30 November, 2023; originally announced December 2023.

Evidence for chiral supercurrent in quantum Hall Josephson junctions

Authors: Hadrien Vignaud, David Perconte, Wenmin Yang, Bilal Kousar, Edouard Wagner, Frédéric Gay, Kenji Watanabe, Takashi Taniguchi, Hervé Courtois, Zheng Han, Hermann Sellier, Benjamin Sacépé

Abstract: Hybridizing superconductivity with the quantum Hall (QH) effects has major potential for designing novel circuits capable of inducing and manipulating non-Abelian states for topological quantum computation. However, despite recent experimental progress towards this hybridization, concrete evidence for a chiral QH Josephson junction -- the elemental building block for coherent superconducting-QH ci… ▽ More Hybridizing superconductivity with the quantum Hall (QH) effects has major potential for designing novel circuits capable of inducing and manipulating non-Abelian states for topological quantum computation. However, despite recent experimental progress towards this hybridization, concrete evidence for a chiral QH Josephson junction -- the elemental building block for coherent superconducting-QH circuits -- is still lacking. Its expected signature is an unusual chiral supercurrent flowing in QH edge channels, which oscillates with a specific $2φ_0$ magnetic flux periodicity ($φ_0=h/2e$ is the superconducting flux quantum, $h$ the Planck constant and $e$ the electron charge). Here, we show that ultra-narrow Josephson junctions defined in encapsulated graphene nanoribbons exhibit such a chiral supercurrent, visible up to 8 teslas, and carried by the spin-degenerate edge channel of the QH plateau of resistance $h/2e^2\simeq 12.9$ k$Ω$. We observe reproducible $2φ_0$-periodic oscillation of the supercurrent, which emerges at constant filling factor when the area of the loop formed by the QH edge channel is constant, within a magnetic-length correction that we resolve in the data. Furthermore, by varying the junction geometry, we show that reducing the superconductor/normal interface length is pivotal to obtain a measurable supercurrent on QH plateaus, in agreement with theories predicting dephasing along the superconducting interface. Our findings mark a critical milestone along the path to explore correlated and fractional QH-based superconducting devices that should host non-Abelian Majorana and parafermion zero modes. △ Less

Submitted 6 August, 2023; v1 submitted 2 May, 2023; originally announced May 2023.

Comments: Maintext and SI

Journal ref: Nature 624, 545 (2023)

Absence of edge reconstruction for quantum Hall edge channels in graphene devices

Authors: Alexis Coissard, Adolfo G. Grushin, Cécile Repellin, Louis Veyrat, Kenji Watanabe, Takashi Taniguchi, Frédéric Gay, Hervé Courtois, Hermann Sellier, Benjamin Sacépé

Abstract: Electronic edge states in topological insulators have become a major paradigm in physics. The oldest and primary example is that of quantum Hall (QH) edge channels that propagate along the periphery of two-dimensional electron gases (2DEGs) under perpendicular magnetic field. Yet, despite 40 years of intensive studies using a variety of transport and scanning probe techniques, imaging the real-spa… ▽ More Electronic edge states in topological insulators have become a major paradigm in physics. The oldest and primary example is that of quantum Hall (QH) edge channels that propagate along the periphery of two-dimensional electron gases (2DEGs) under perpendicular magnetic field. Yet, despite 40 years of intensive studies using a variety of transport and scanning probe techniques, imaging the real-space structure of QH edge channels has proven difficult, mainly due to the buried nature of most 2DEGs in semiconductors. Here, we show that QH edge states in graphene are confined to a few magnetic lengths at the crystal edges by performing scanning tunneling spectroscopy up to the edge of a graphene flake on hexagonal boron nitride. These findings indicate that QH edge states are defined by boundary conditions of vanishing electronic wavefunctions at the crystal edges, resulting in ideal one-dimensional chiral channels, free of electrostatic reconstruction. We further evidence a uniform charge carrier density at the edges, contrasting with conjectures on the existence of non-topological upstream modes. The absence of electrostatic reconstruction of quantum Hall edge states has profound implications for the universality of electron and heat transport experiments in graphene-based systems and other 2D crystalline materials. △ Less

Submitted 22 March, 2023; v1 submitted 14 October, 2022; originally announced October 2022.

Comments: New theoretical simulations of the tunneling DOS added

Journal ref: Science Advances 9, eadf7220 (2023)

Coulomb-mediated antibunching of an electron pair surfing on sound

Authors: Junliang Wang, Hermann Edlbauer, Aymeric Richard, Shunsuke Ota, Wanki Park, Jeongmin Shim, Arne Ludwig, Andreas Wieck, Heung-Sun Sim, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Hermann Sellier, Xavier Waintal, Shintaro Takada, Christopher Bäuerle

Abstract: Electron flying qubits are envisioned as potential information link within a quantum computer, but also promise -- alike photonic approaches -- a self-standing quantum processing unit. In contrast to its photonic counterpart, electron-quantum-optics implementations are subject to Coulomb interaction, which provide a direct route to entangle the orbital or spin degree of freedom. However, the contr… ▽ More Electron flying qubits are envisioned as potential information link within a quantum computer, but also promise -- alike photonic approaches -- a self-standing quantum processing unit. In contrast to its photonic counterpart, electron-quantum-optics implementations are subject to Coulomb interaction, which provide a direct route to entangle the orbital or spin degree of freedom. However, the controlled interaction of flying electrons at the single particle level has not yet been established experimentally. Here we report antibunching of a pair of single electrons that is synchronously shuttled through a circuit of coupled quantum rails by means of a surface acoustic wave. The in-flight partitioning process exhibits a reciprocal gating effect which allows us to ascribe the observed repulsion predominantly to Coulomb interaction. Our single-shot experiment marks an important milestone on the route to realise a controlled-phase gate for in-flight quantum manipulations. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Journal ref: Nature Nanotechnology 18, 721-726 (2023)

Imaging tunable quantum Hall broken-symmetry orders in graphene

Authors: Alexis Coissard, David Wander, Hadrien Vignaud, Adolfo G. Grushin, Cécile Repellin, Kenji Watanabe, Takashi Taniguchi, Frédéric Gay, Clemens B. Winkelmann, Hervé Courtois, Hermann Sellier, Benjamin Sacépé

Abstract: When electrons populate a flat band their kinetic energy becomes negligible, forcing them to organize in exotic many-body states to minimize their Coulomb energy. The zeroth Landau level of graphene under magnetic field is a particularly interesting strongly interacting flat band because inter-electron interactions are predicted to induce a rich variety of broken-symmetry states with distinct topo… ▽ More When electrons populate a flat band their kinetic energy becomes negligible, forcing them to organize in exotic many-body states to minimize their Coulomb energy. The zeroth Landau level of graphene under magnetic field is a particularly interesting strongly interacting flat band because inter-electron interactions are predicted to induce a rich variety of broken-symmetry states with distinct topological and lattice-scale orders. Evidence for these stems mostly from indirect transport experiments that suggest that broken-symmetry states are tunable by boosting the Zeeman energy or by dielectric screening of the Coulomb interaction. However, confirming the existence of these ground states requires a direct visualization of their lattice-scale orders. Here, we image three distinct broken-symmetry phases in graphene using scanning tunneling spectroscopy. We explore the phase diagram by tuning the screening of the Coulomb interaction by a low or high dielectric constant environment, and with a magnetic field. In the unscreened case, we unveil a Kekulé bond order, consistent with observations of an insulating state undergoing a magnetic-field driven Kosterlitz-Thouless transition. Under dielectric screening, a sublattice-unpolarized ground state emerges at low magnetic fields, and transits to a charge-density-wave order with partial sublattice polarization at higher magnetic fields. The Kekulé and charge-density-wave orders furthermore coexist with additional, secondary lattice-scale orders that enrich the phase diagram beyond current theory predictions. This screening-induced tunability of broken-symmetry orders may prove valuable to uncover correlated phases of matter in other quantum materials. △ Less

Submitted 23 June, 2022; v1 submitted 6 October, 2021; originally announced October 2021.

Comments: Main text + SI

Journal ref: Nature 605, 51-56 (2022)

A tunable Fabry-Pérot quantum Hall interferometer in graphene

Authors: Corentin Déprez, Louis Veyrat, Hadrien Vignaud, Goutham Nayak, Kenji Watanabe, Takashi Taniguchi, Frédéric Gay, Hermann Sellier, Benjamin Sacépé

Abstract: Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven challenging and often obscured by charging effects. Here we show that high-mobility monolayer graphene equipped with a series of gate-tunable quantum point contacts that… ▽ More Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven challenging and often obscured by charging effects. Here we show that high-mobility monolayer graphene equipped with a series of gate-tunable quantum point contacts that act as electron beam-splitters provides a model system to perform Fabry-Pérot quantum Hall interferometry. We observe high-visibility Aharonov-Bohm interference free of charging effects and widely tunable through electrostatic gating or magnetic field, in remarkable agreement with theory. A coherence length of $\mathbf{10 \,μm}$ at a temperature of $0.02$ K allows us to further achieve coherently-coupled double Fabry-Pérot interferometry. Our results open a new avenue for quantum Hall interferometry and the exploitation of topological excitations for quantum computation. △ Less

Submitted 3 May, 2021; v1 submitted 25 August, 2020; originally announced August 2020.

Comments: Revised main text

Journal ref: Nature Nanotechnology (2021)

Helical quantum Hall phase in graphene on SrTiO$_3$

Authors: Louis Veyrat, Corentin Déprez, Alexis Coissard, Xiaoxi Li, Frédéric Gay, Kenji Watanabe, Takashi Taniguchi, Zheng Vitto Han, Benjamin A. Piot, Hermann Sellier, Benjamin Sacépé

Abstract: The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitatio… ▽ More The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitations. We tuned the ground state of the graphene zeroth Landau level to the topological phase via a suitable screening of the Coulomb interaction with a SrTiO$_3$ high-$k$ dielectric substrate. We observed robust helical edge transport emerging at a magnetic field as low as 1 tesla and withstanding temperatures up to 110 kelvins over micron-long distances. This new and versatile graphene platform opens new avenues for spintronics and topological quantum computation. △ Less

Submitted 4 July, 2019; originally announced July 2019.

Comments: Main text + SI

Journal ref: Science 367, 781 (2020)

Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene

Authors: Louis Veyrat, Anna Jordan, Katrin Zimmermann, Frederic Gay, Kenji Watanabe, Takeshi Taniguchi, Hermann Sellier, Benjamin Sacépé

Abstract: We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the conductance exhibits Fabry-Pérot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field $B^*$ corresponding to the… ▽ More We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the conductance exhibits Fabry-Pérot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field $B^*$ corresponding to the cyclotron radius equal to the npn cavity length, Fabry-Pérot resonances vanish and snake trajectories are guided through the constriction with a characteristic set of conductance oscillations. Increasing further the magnetic field allows us to probe the Landau level spectrum in the constriction, with distortions due to the combination of confinement and de-confinement of Landau levels in a saddle potential. These observations are confirmed by numerical calculations. △ Less

Submitted 2 December, 2018; v1 submitted 26 June, 2018; originally announced June 2018.

Journal ref: Nano Letters (2019)

Thermoelectric Scanning Gate Interferometry on a Quantum Point Contact

Authors: B. Brun, F. Martins, S. Faniel, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, P. Simon, S. Huant, M. Sanquer, H. Sellier, V. Bayot, B. Hackens

Abstract: We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential la… ▽ More We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential landscape. We apply this technique to perform interferometry of the thermoelectric transport in a quantum point contact (QPC). We observe an interference pattern both in SGM and TSGM images, and evidence large differences between the two signals in the low density regime of the QPC. In particular, a large phase jump appears in the interference fringes recorded by TSGM, which is not visible in SGM. We discuss this difference of sensitivity using a microscopic model of the experiment, based on the contribution from a resonant level inside or close to the QPC. This work demonstrates that combining scanning gate microscopy with thermoelectric measurements offers new information as compared to SGM, and provides a direct access to the derivative of the device transmission with respect to energy, both in amplitude and in phase. △ Less

Submitted 15 March, 2019; v1 submitted 30 March, 2018; originally announced April 2018.

Comments: Accepted for publication in Physical Review Applied

Journal ref: Phys. Rev. Applied 11, 034069 (2019)

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices

Authors: Katrin Zimmermann, Anna Jordan, Frédéric Gay, Kenji Watanabe, Takashi Taniguchi, Zheng Han, Vincent Bouchiat, Hermann Sellier, Benjamin Sacépé

Abstract: Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact (QPC), is fundamental for many coherent transport experiments. However, in graphene, tailoring a QPC with electrostatic gates remains challengin… ▽ More Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact (QPC), is fundamental for many coherent transport experiments. However, in graphene, tailoring a QPC with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short-circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high mobility boron-nitride/graphene/boron-nitride van-der-Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling QPC operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of quantum Hall edge channels through the QPC, both in the integer and the fractional quantum Hall regimes. This gate-control of edge channel propagation in graphene van-der-Waals heterostructures opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene. △ Less

Submitted 5 March, 2017; v1 submitted 27 May, 2016; originally announced May 2016.

Comments: New data in the fractional quantum Hall regime added

Journal ref: Nature Communications 8:14983 (2017)

Conductance measurement of spin-orbit coupling in the two-dimensional electron systems with in-plane magnetic field

Authors: K. Kolasiński, H. Sellier, B. Szafran

Abstract: We consider determination of spin-orbit (SO) coupling constants for the two-dimensional electron gas from measurements of electric properties in rotated in-plane magnetic field. %Due to the interplay Due to the SO coupling the electron backscattering is accompanied by spin precession and spin mixing of the incident and reflected electron waves. The competition of the external and SO-related magnet… ▽ More We consider determination of spin-orbit (SO) coupling constants for the two-dimensional electron gas from measurements of electric properties in rotated in-plane magnetic field. %Due to the interplay Due to the SO coupling the electron backscattering is accompanied by spin precession and spin mixing of the incident and reflected electron waves. The competition of the external and SO-related magnetic fields produces a characteristic conductance dependence on the in-plane magnetic field value and orientation which, in turn, allows for determination of the absolute value of the effective spin-orbit coupling constant as well as the ratio of the Rashba and Dresselhaus SO contributions. △ Less

Submitted 30 September, 2016; v1 submitted 5 April, 2016; originally announced April 2016.

Comments: 4 pages + supplementary materials

Journal ref: Phys. Rev. B 94, 121304 (2016)

Electron phase shift at the zero-bias anomaly of quantum point contacts

Authors: B. Brun, F. Martins, S. Faniel, B. Hackens, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, P. Simon, S. Huant, V. Bayot, M. Sanquer, H. Sellier

Abstract: The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the firs… ▽ More The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the first phase-sensitive measurement of the zero-bias anomaly in quantum point contacts using a scanning gate microscope to create an electronic interferometer. We observe an abrupt shift of the interference fringes by half a period in the bias range of the zero-bias anomaly, a behavior which cannot be reproduced by single-particle models. We instead relate it to the phase shift experienced by electrons scattering off a Kondo system. Our experiment therefore provides new evidence of this many-body effect in quantum point contacts. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Journal ref: Physical Review Letters 116, 136801 (2016)

Interference features in scanning gate conductance maps of quantum point contacts with disorder

Authors: K. Kolasiński, B. Szafran, B. Brun, H. Sellier

Abstract: We consider quantum point contacts (QPCs) defined within disordered two-dimensional electron gases as studied by scanning gate microscopy. We evaluate the conductance maps in the Landauer approach and wave function picture of electron transport for samples with both low and high electron mobility at finite temperatures. We discuss the spatial distribution of the impurities in the context of the br… ▽ More We consider quantum point contacts (QPCs) defined within disordered two-dimensional electron gases as studied by scanning gate microscopy. We evaluate the conductance maps in the Landauer approach and wave function picture of electron transport for samples with both low and high electron mobility at finite temperatures. We discuss the spatial distribution of the impurities in the context of the branched electron flow. We reproduce the surprising temperature stability of the experimental interference fringes far from the QPC. Next, we discuss -- previously undescribed -- funnel-shaped features that accompany splitting of the branches visible in previous experiments. Finally, we study elliptical interference fringes formed by an interplay of scattering by the point-like impurities and by the scanning probe. We discuss the details of the elliptical features as functions of the tip voltage and the temperature, showing that the first interference fringe is very robust against the thermal widening of the Fermi level. We present a simple analytical model that allows for extraction of the impurity positions and the electron gas depletion radius induced by the negatively charged tip of the atomic force microscope, and apply this model on experimental scanning gate images showing such elliptical fringes. △ Less

Submitted 23 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. B 94, 075301 (2016)

Spin-orbit coupling measurement by the scanning gate microscopy

Authors: K. Kolasiński, H. Sellier, B. Szafran

Abstract: We propose a procedure for extraction of the Fermi surface for a two-dimensional electron gas with a strong Rashba spin-orbit coupling from conductance microscopy. Due to the interplay between the effective spin-orbit magnetic field and the external one within the plane of confinement, the backscattering induced by a charged tip of an atomic force microscope located above the sample, leads to the… ▽ More We propose a procedure for extraction of the Fermi surface for a two-dimensional electron gas with a strong Rashba spin-orbit coupling from conductance microscopy. Due to the interplay between the effective spin-orbit magnetic field and the external one within the plane of confinement, the backscattering induced by a charged tip of an atomic force microscope located above the sample, leads to the spin precession, and thus to the spin mixing of the incident and reflected modes. This mixing leads to a characteristic angle-dependent beating pattern visible in the conductance maps. We show that the structure of the Fermi level, bearing signatures of the spin-orbit coupling, can be extracted from the Fourier transform of the interference fringes in the conductance maps as a function of the magnetic field direction. We propose a simple analytical model which can be used to fit the experimental data in order to obtain the spin-orbit coupling constant. △ Less

Submitted 4 February, 2016; originally announced February 2016.

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

Authors: P. Liu, F. Martins, B. Hackens, L. Desplanque, X. Wallart, M. G. Pala, S. Huant, V. Bayot, H. Sellier

Abstract: The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites of the wires produces conductance oscillations that are periodic in the tip voltage. These oscillations take the shape of concentric circles whose number and di… ▽ More The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites of the wires produces conductance oscillations that are periodic in the tip voltage. These oscillations take the shape of concentric circles whose number and diameter increase for more negative tip voltages until full depletion occurs in the probed region. These observations cannot be explained by charging events in material traps, but are consistent with Coulomb blockade in quantum dots forming when the potential fluctuations are raised locally at the Fermi level by the gating action of the tip. This interpretation is supported by simple electrostatic simulations in the case of a disorder potential induced by ionized dopants. This work represents a local investigation of the mechanisms responsible for the disorder-induced metal-to-insulator transition observed in macroscopic two-dimensional electron systems at low enough density. △ Less

Submitted 27 February, 2015; originally announced February 2015.

Journal ref: Physical Review B 91, 075313 (2015)

Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

Authors: S. Huant, S. Baltazar, P. Liu, H. Sellier, B. Hackens, F. Martins, V. Bayot, X. Wallart, L. Desplanque, M. G. Pala

Abstract: By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here… ▽ More By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network. △ Less

Submitted 6 December, 2013; originally announced December 2013.

Comments: 31st Int. Conf. Phys. Semiconductors, Zurich, July-August 2012

Journal ref: AIP Conference Proceedings 1566, 229 (2013

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy

Authors: B. Brun, F. Martins, S. Faniel, B. Hackens, G. Bachelier, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, S. Huant, V. Bayot, M. Sanquer, H. Sellier

Abstract: Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point c… ▽ More Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While swee** the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position. △ Less

Submitted 18 December, 2014; v1 submitted 31 July, 2013; originally announced July 2013.

Journal ref: Nature Communications 5, 4290 (2014)

Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island

Authors: F. Martins, S. Faniel, B. Rosenow, M. G. Pala, H. Sellier, S. Huant, L. Desplanque, X. Wallart, V. Bayot, B. Hackens

Abstract: We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb b… ▽ More We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb blockade governs transport across the QHI. Varying the microscope tip bias as well as current bias across the device, we uncover the QHI discrete energy spectrum arising from electronic confinement and we extract estimates of the gradient of the confining potential and of the edge state velocity. △ Less

Submitted 7 May, 2013; originally announced May 2013.

Comments: 13 pages, 3 figures

MSC Class: 73.43.Jn; 73.43.-f; 73.23.Hk

Journal ref: New Journal of Physics 15, 013049 (2013)

Coherent tunnelling across a quantum point contact in the quantum Hall regime

Authors: F. Martins, S. Faniel, B. Rosenow, H. Sellier, S. Huant, M. G. Pala, L. Desplanque, X. Wallart, V. Bayot, B. Hackens

Abstract: The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC ca… ▽ More The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC can turn into an interferometer for specific potential landscapes. Spectroscopy, magnetic field and temperature dependences of electron transport reveal a quantitatively consistent interferometric behavior of the studied QPC. To explain this unexpected behavior, we put forward a new model which relies on the presence of a quantum Hall island at the centre of the constriction as well as on different tunnelling paths surrounding the island, thereby creating a new type of interferometer. This work sets the ground for new device concepts based on coherent tunnelling. △ Less

Submitted 9 May, 2013; v1 submitted 7 May, 2013; originally announced May 2013.

Comments: 19 pages, 8 figures

MSC Class: 73.21.La; 73.23.Ad; 03.65.Yz; 85.35.Ds

Journal ref: Scientific Reports 3 : 1416 (2013)

A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks

Authors: Marco Pala, Hermann Sellier, Benoit Hackens, Frederico Martins, Vincent Bayot, Serge Huant

Abstract: The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve congestion can counter-intuitively degrade the overall network performance. Recently, we have extended the concept of Braess paradox to semiconductor mesoscopic networks, whose transport properties are governed by quantum physics. In this pape… ▽ More The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve congestion can counter-intuitively degrade the overall network performance. Recently, we have extended the concept of Braess paradox to semiconductor mesoscopic networks, whose transport properties are governed by quantum physics. In this paper, we demonstrate theoretically that, alike in classical systems, congestion plays a key role in the occurrence of a Braess paradox in mesoscopic networks. △ Less

Submitted 4 August, 2012; originally announced August 2012.

Comments: Invited talk at Int. Conf. on Superlattices, Nanostructures, and Nanodevices (ICSNN2012), Dresden, July 2012; submitted to Nanoscale Res. Lett

Journal ref: Nanoscale Res. Lett. 7, 472 (2012)

Casimir force measurements in Au-Au and Au-Si cavities at low temperature

Authors: J. Laurent, H. Sellier, A. Mosset, S. Huant, J. Chevrier

Abstract: We report on measurements of the Casimir force in a sphere-plane geometry using a cryogenic force microscope to move the force probe in situ over different materials. We show how the electrostatic environment of the interacting surfaces plays an important role in weak force measurements and can overcome the Casimir force at large distance. After minimizing these parasitic forces, we measure the Ca… ▽ More We report on measurements of the Casimir force in a sphere-plane geometry using a cryogenic force microscope to move the force probe in situ over different materials. We show how the electrostatic environment of the interacting surfaces plays an important role in weak force measurements and can overcome the Casimir force at large distance. After minimizing these parasitic forces, we measure the Casimir force between a gold-coated sphere and either a gold-coated or a heavily doped silicon surface in the 100-400 nm distance range. We compare the experimental data with theoretical predictions and discuss the consequence of a systematic error in the scanner calibration on the agreement between experiment and theory. The relative force over the two surfaces compares favorably with theory at short distance, showing that this Casimir force experiment is sensitive to the dielectric properties of the interacting surfaces. △ Less

Submitted 13 January, 2012; originally announced January 2012.

Comments: accepted for publication in Physical Review B

Journal ref: Physical Review B 85, 035426 (2012)

Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox

Authors: M. G. Pala, S. Baltazar, P. Liu, H. Sellier, B. Hackens, F. Martins, V. Bayot, X. Wallart, L. Desplanque, S. Huant

Abstract: We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A sc… ▽ More We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A scanning-probe experiment using a biased tip to modulate the transmission of one branch in the network reveals the occurrence of this paradox by map** the conductance variation as a function of the tip voltage and position. △ Less

Submitted 10 January, 2012; v1 submitted 6 December, 2011; originally announced December 2011.

Comments: 2nd version with minor stylistic corrections. To appear in Phys. Rev. Lett.: Editorially approved for publication 6 January 2012

Journal ref: Phys. Rev. Lett. 108, 076802 (2012)

Large variation in the boundary-condition slippage for a rarefied gas flowing between two surfaces

Authors: J. Laurent, A. Drezet, H. Sellier, J. Chevrier, S. Huant

Abstract: We study the slippage of a gas along mobile rigid walls in the sphere-plane confined geometry and find that it varies considerably with pressure. The classical no-slip boundary condition valid at ambient pressure changes continuously to an almost perfect slip condition in a primary vacuum. Our study emphasizes the key role played by the mean free-path of the gas molecules on the interaction betwee… ▽ More We study the slippage of a gas along mobile rigid walls in the sphere-plane confined geometry and find that it varies considerably with pressure. The classical no-slip boundary condition valid at ambient pressure changes continuously to an almost perfect slip condition in a primary vacuum. Our study emphasizes the key role played by the mean free-path of the gas molecules on the interaction between a confined fluid and solid surfaces and further demonstrates that the macroscopic hydrodynamics approach can be used with confidence even in a primary vacuum environment where it is intuitively expected to fail. △ Less

Submitted 11 September, 2011; originally announced September 2011.

Journal ref: Phys. Rev. Lett. 107, 164501 (2011)

Negative Backaction Noise in Interferometric Detection of a Microlever

Authors: J. Laurent, A. Mosset, O. Arcizet, J. Chevrier, S. Huant, H. Sellier

Abstract: Interferometric detection of mirror displacements is intrinsically limited by laser shot noise. In practice, however, it is often limited by thermal noise. Here we report on an experiment performed at the liquid helium temperature to overcome the thermal noise limitation and investigate the effect of classical laser noise on a microlever that forms a Fabry-Perot cavity with an optical fiber. The s… ▽ More Interferometric detection of mirror displacements is intrinsically limited by laser shot noise. In practice, however, it is often limited by thermal noise. Here we report on an experiment performed at the liquid helium temperature to overcome the thermal noise limitation and investigate the effect of classical laser noise on a microlever that forms a Fabry-Perot cavity with an optical fiber. The spectral noise densities show a region of negative contribution of the backaction noise close to the resonance frequency. We interpret this noise reduction as a coherent coupling of the microlever to the laser intensity noise. This optomechanical effect could be used to improve the detection sensitivity as discussed in proposals going beyond the Standard Quantum Limit. △ Less

Submitted 22 July, 2011; originally announced July 2011.

Comments: accepted for publication in Physical Review Letters

Journal ref: Physical Review Letters 107, 050801 (2011)

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Authors: Hermann Sellier, Benoit Hackens, Marco Pala, Frederico Martins, Samuel Baltazar, Xavier Wallart, Ludovic Desplanque, Vincent Bayot, Serge Huant

Abstract: This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings… ▽ More This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microscopy. These include possible tip induced artefacts, effects of a large bias applied to the scanning tip, as well as consequences of unwanted charge traps on the conductance maps. We emphasize how special care must be paid in interpreting these scanning-gate images. △ Less

Submitted 11 April, 2011; originally announced April 2011.

Comments: Special issue on (nano)characterization of semiconductor materials and structures

Journal ref: Semicond. Sci. Technol. 26, 064008 (2011)

Imaging Coulomb Islands in a Quantum Hall Interferometer

Authors: B. Hackens, F. Martins, S. Faniel, C. A. Dutu, H. Sellier, S. Huant, M. Pala, L. Desplanque, X. Wallart, V. Bayot

Abstract: In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electro… ▽ More In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of quantum Hall Coulomb islands, and reveal the spatial structure of transport inside a quantum Hall interferometer. Electron islands locations are found by modulating the tunneling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high magnetic field magnetoresistance oscillations, and opens the way to further local scale manipulations of quantum Hall localized states. △ Less

Submitted 21 October, 2010; originally announced October 2010.

Journal ref: Nature Communications 1:39 (2010)

Scanning-gate microscopy of semiconductor nanostructures: an overview

Authors: F. Martins, B. Hackens, H. Sellier, P. Liu, M. G. Pala, S. Baltazar, L. Desplanque, X. Wallart, V. Bayot, S. Huant

Abstract: This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs… ▽ More This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements. △ Less

Submitted 19 October, 2010; originally announced October 2010.

Comments: Invited talk by SH at 39th "Jaszowiec" International School and Conference on the Physics of Semiconductors, Krynica-Zdroj, Poland, June 2010

Journal ref: Acta Phys. Polon. A 119, 569 (2011)

Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy

Authors: M. G. Pala, B. Hackens, F. Martins, H. Sellier, V. Bayot, S. Huant, T. Ouisse

Abstract: We study the relationship between the local density of states (LDOS) and the conductance variation $ΔG$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift $ΔG$ is proportional to the Hilbert transform of the LDOS and hence a generalized Kr… ▽ More We study the relationship between the local density of states (LDOS) and the conductance variation $ΔG$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift $ΔG$ is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and $ΔG$. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS-$ΔG$ correspondence by means of exact numerical simulations, when localized states or semi-classical orbits characterize the wavefunction of the system. △ Less

Submitted 21 November, 2007; originally announced November 2007.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 77, 125310 (2008)

Imaging Electron Wave Functions Inside Open Quantum Rings

Authors: F. Martins, B. Hackens, M. G. Pala, T. Ouisse, H. Sellier, X. Wallart, S. Bollaert, A. Cappy, J. Chevrier, V. Bayot, S. Huant

Abstract: Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|Ψ|^{2}(x,y)$ in embedded mesoscopic quantum rings (QRs). The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wavefunction interferences. Simulations of bot… ▽ More Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|Ψ|^{2}(x,y)$ in embedded mesoscopic quantum rings (QRs). The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wavefunction interferences. Simulations of both $|Ψ|^{2}(x,y)$ and SGM conductance maps reproduce the main experimental observations and link fringes in SGM images to $|Ψ|^{2}(x,y)$. △ Less

Submitted 2 October, 2007; v1 submitted 3 September, 2007; originally announced September 2007.

Comments: new title

Journal ref: Phys. Rev. Lett. 99, 136807 (2007)

Imaging and controlling electron transport inside a quantum ring

Authors: B. Hackens, F. Martins, T. Ouisse, H. Sellier, S. Bollaert, X. Wallart, A. Cappy, J. Chevrier, V. Bayot, S. Huant

Abstract: Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a detailed image of "how electrons behave down there". Ideally, understanding transport at the nanoscale would require tracking each electron inside the nano-d… ▽ More Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a detailed image of "how electrons behave down there". Ideally, understanding transport at the nanoscale would require tracking each electron inside the nano-device. Significant progress towards this goal was obtained by combining Scanning Probe Microscopy (SPM) with transport measurements2-7. Some studies even showed signatures of quantum transport in the surrounding of nanostructures4-6. Here, SPM is used to probe electron propagation inside an open quantum ring exhibiting the archetype of electron wave interference phenomena: the Aharonov-Bohm effect8. Conductance maps recorded while scanning the biased tip of a cryogenic atomic force microscope above the quantum ring show that the propagation of electrons, both coherent and ballistic, can be investigated in situ, and even be controlled by tuning the tip potential. △ Less

Submitted 14 November, 2006; originally announced November 2006.

Comments: 11 text pages + 3 figures

Journal ref: Nature Physics, published online 12 november 2006

Transport spectroscopy of a single dopant in a gated silicon nanowire

Authors: H. Sellier, G. P. Lansbergen, J. Caro, N. Collaert, I. Ferain, M. Jurczak, S. Biesemans, S. Rogge

Abstract: We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up… ▽ More We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up and spin-down electrons under magnetic field. The first resonance is consistent with the binding energy of the neutral $D^0$ state of an arsenic donor. The second resonance shows a reduced charging energy due to the electrostatic coupling of the charged $D^-$ state with electrodes. Excited states and Zeeman splitting under magnetic field present large energies potentially useful to build atomic scale devices. △ Less

Submitted 13 November, 2006; v1 submitted 7 August, 2006; originally announced August 2006.

Comments: accepted for publication in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 97, 206805 (2006)

Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors

Authors: H. Sellier, G. P. Lansbergen, J. Caro, N. Collaert, I. Ferain, M. Jurczak, S. Biesemans, S. Rogge

Abstract: We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers, down to 50x60x35 nm^3. Conductance versus gate voltage show Coulomb-blockade oscillatio… ▽ More We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers, down to 50x60x35 nm^3. Conductance versus gate voltage show Coulomb-blockade oscillations with a large charging energy due to the formation of a small potential well below the gate. According to dependencies on device geometry and thermionic current analysis, we conclude that sub-threshold channels, a few nanometers wide, appear at the nanowire edges, hence providing an experimental evidence for the corner-effect. △ Less

Submitted 5 March, 2007; v1 submitted 16 March, 2006; originally announced March 2006.

Journal ref: Appl. Phys. Lett. 90, 073502 (2007)

Scanning Tunneling Spectroscopy of the superconducting proximity effect in a diluted ferromagnetic alloy

Authors: L. Cretinon, A. K. Gupta, H. Sellier, F. Lefloch, M. Faure, A. Buzdin, H. Courtois

Abstract: We studied the proximity effect between a superconductor (Nb) and a diluted ferromagnetic alloy (CuNi) in a bilayer geometry. We measured the local density of states on top of the ferromagnetic layer, which thickness varies on each sample, with a very low temperature Scanning Tunneling Microscope. The measured spectra display a very high homogeneity. The analysis of the experimental data shows t… ▽ More We studied the proximity effect between a superconductor (Nb) and a diluted ferromagnetic alloy (CuNi) in a bilayer geometry. We measured the local density of states on top of the ferromagnetic layer, which thickness varies on each sample, with a very low temperature Scanning Tunneling Microscope. The measured spectra display a very high homogeneity. The analysis of the experimental data shows the need to take into account an additional scattering mechanism. By including in the Usadel equations the effect of the spin relaxation in the ferromagnetic alloy, we obtain a good description of the experimental data. △ Less

Submitted 13 September, 2005; v1 submitted 2 February, 2005; originally announced February 2005.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 72, 024511 (2005)

Half-integer Shapiro steps at the 0-pi crossover of a ferromagnetic Josephson junction

Authors: H. Sellier, C. Baraduc, F. Lefloch, R. Calemczuk

Abstract: We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness and temperature. For a certain thickness a non-zero minimum of critical current is observed at the crossover temperature. We analyze this residual supercurrent by applying a high frequency excitation a… ▽ More We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness and temperature. For a certain thickness a non-zero minimum of critical current is observed at the crossover temperature. We analyze this residual supercurrent by applying a high frequency excitation and observe the formation of half-integer Shapiro steps. We attribute these fractional steps to a doubling of the Josephson frequency due to a sin(2*phi) current-phase relation. This phase dependence is explained by the splitting of the energy levels in the ferromagnetic exchange field. △ Less

Submitted 10 June, 2004; originally announced June 2004.

Comments: 4 pages, 5 figures, accepted for publication in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 92, 257005 (2004)

Inhomogeneous superconductivity induced in a weak ferromagnet

Authors: A. Rusanov, R. Boogaard, M. Hesselberth, H. Sellier, J. Aarts

Abstract: Under certain conditions, the order parameter induced by a superconductor (S) in a ferromagnet (F) can be inhomogeneous and oscillating, which results e.g. in the so-called pi-coupling in S/F/S junctions. In principle, the inhomogeneous state can be induced at T_c as function of the F-layer thickness d_F in S/F bilayers and multilayers, which should result in a dip-like characteristic of T_c(d_F… ▽ More Under certain conditions, the order parameter induced by a superconductor (S) in a ferromagnet (F) can be inhomogeneous and oscillating, which results e.g. in the so-called pi-coupling in S/F/S junctions. In principle, the inhomogeneous state can be induced at T_c as function of the F-layer thickness d_F in S/F bilayers and multilayers, which should result in a dip-like characteristic of T_c(d_F). We show the results of measurements on the S/F system Nb/Cu_{1-x}Ni_x, for Ni-concentrations in the range x = 0.5-0.7, where such effects might be expected. We find that the critical thickness for the occurrence of superconductivity is still relatively high, even for these weak ferromagnets. The resulting dip then is intrinsically shallow and difficult to observe, which explains the lack of a clear signature in the T_c(d_F) data. △ Less

Submitted 9 November, 2001; originally announced November 2001.

Comments: 4 pages, 4 figures. To be publishedin Physica C (proceedings of the Second Euroconference on Vortex Matter in Superconductors, Crete, 2001)