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Thermal Energy Transport in Oxide Nuclear Fuel
Authors:
David H. Hurley,
Anter El-Azab,
Matthew S. Bryan,
Michael W. D. Cooper,
Cody A. Dennett,
Krzysztof Gofryk,
Lingfeng He,
Marat Khafizov,
Gerard H. Lander,
Michael E. Manley,
J. Matthew Mann,
Chris A. Marianetti,
Karl Rickert,
Farida A. Selim,
Michael R. Tonks,
Janelle P. Wharry
Abstract:
To efficiently capture the energy of the nuclear bond, advanced nuclear reactor concepts seek solid fuels that must withstand unprecedented temperature and radiation extremes. In these advanced fuels, thermal energy transport under irradiation is directly related to reactor performance as well as reactor safety. The science of thermal transport in nuclear fuel is a grand challenge due to both comp…
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To efficiently capture the energy of the nuclear bond, advanced nuclear reactor concepts seek solid fuels that must withstand unprecedented temperature and radiation extremes. In these advanced fuels, thermal energy transport under irradiation is directly related to reactor performance as well as reactor safety. The science of thermal transport in nuclear fuel is a grand challenge due to both computational and experimental complexities. Here, we provide a comprehensive review of thermal transport research on two actinide oxides: one currently in use in commercial nuclear reactors, uranium dioxide (UO2), and one advanced fuel candidate material, thorium dioxide (ThO2). In both materials, heat is carried by lattice waves or phonons. Crystalline defects caused by fission events effectively scatter phonons and lead to a degradation in fuel performance over time. Bolstered by new computational and experimental tools, researchers are now develo** the foundational work necessary to accurately model and ultimately control thermal transport in advanced nuclear fuel. We begin by reviewing research aimed at understanding thermal transport in perfect single crystals. The absence of defects enables studies that focus on the fundamental aspects of phonon transport. Next, we review research that targets defect generation and evolution. Here, the focus is on ion irradiation studies used as surrogates for damage caused by fission products. We end this review with a discussion of modeling and experimental efforts directed at predicting and validating mesoscale thermal transport in the presence of irradiation defects. While efforts into these research areas have been robust, challenging work remains in develo** holistic tools to capture and predict thermal energy transport across widely varying environmental conditions.
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Submitted 27 April, 2022;
originally announced April 2022.
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Light-driven permanent transition from insulator to conductor in Ga2O3
Authors:
F. A. Selim,
D. Rana,
S. Agarwal,
M. Islam,
A. Banerjee,
B. P. Uberuaga,
P. Saadatkia,
P. Dulal,
N. Adhikari,
M. Butterling,
M. O. Liedke,
A. Wagner
Abstract:
The transition from insulator to conductor can be achieved in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by do**. Here we reveal a mechanism the lattice may adopt to induce such a transition. We show that limited exposure to sub-bandgap light caused a permanent transition from an insulator state to a condu…
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The transition from insulator to conductor can be achieved in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by do**. Here we reveal a mechanism the lattice may adopt to induce such a transition. We show that limited exposure to sub-bandgap light caused a permanent transition from an insulator state to a conductor state in the insulating oxide Ga2O3 with 9-orders of magnitude increase in electronic conduction. Photoexcitation modifies the charge state of an O-vacancy and the redistribution of the localized electrons, leading to a massive structural distortion in the lattice that is shown to be the underlying mechanism. It modifies density of states and introduces new stable states with shallower energy levels, leading to this intriguing behavior. We suggest that this mechanism may occur in other wide bandgap metal oxides leading to drastic modification in their electronic properties.
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Submitted 22 March, 2020;
originally announced March 2020.
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Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3
Authors:
Md Minhazul Islam,
Maciej Oskar Liedke,
David Winarski,
Maik Butterling,
Andreas Wagner,
Peter Hosemann,
Yongqiang Wang,
Blas Uberuaga,
Farida A. Selim
Abstract:
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar do** (n-type and p-type do**) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in beta-Ga2O3, an ultra-wide band…
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Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar do** (n-type and p-type do**) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in beta-Ga2O3, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further do**. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10-4 Ohm.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga2O3 lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy confirmed this finding and the interpretation of the results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time it demonstrates for the first time p-type and remarkable n-type conductivity in Ga2O3 which should usher in the development of Ga2O3 devices and advance optoelectronics and high-power devices
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Submitted 6 November, 2019;
originally announced November 2019.
