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Layer-selective spin-orbit coupling and strong correlation in bilayer graphene
Authors:
Anna M. Seiler,
Yaroslav Zhumagulov,
Klaus Zollner,
Chiho Yoon,
David Urbaniak,
Fabian R. Geisenhof,
Kenji Watanabe,
Takashi Taniguchi,
Jaroslav Fabian,
Fan Zhang,
R. Thomas Weitz
Abstract:
Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene, which has weak SOC, intrinsic Lifshitz transitions and concomitant van-Hove singularities lead to the emergence of many-body correlated phases. Layer-selective SOC can be proximity induced by add…
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Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene, which has weak SOC, intrinsic Lifshitz transitions and concomitant van-Hove singularities lead to the emergence of many-body correlated phases. Layer-selective SOC can be proximity induced by adding a layer of tungsten diselenide (WSe2) on its one side. By applying an electric displacement field, the system can be tuned across a spectrum wherein electronic correlation, SOC, or a combination of both dominates. Our investigations reveal an intricate phase diagram of proximity-induced SOC-selective bilayer graphene. Not only does this phase diagram include those correlated phases reminiscent of SOC-free doped bilayer graphene, but it also hosts unique SOC-induced states allowing a compelling measurement of valley g-factor and a seemingly impossible correlated insulator at charge neutrality, thereby showcasing the remarkable tunability of the interplay between interaction and SOC in WSe2 enriched bilayer graphene.
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Submitted 25 March, 2024;
originally announced March 2024.
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Probing the tunable multi-cone bandstructure in Bernal bilayer graphene
Authors:
Anna M. Seiler,
Nils Jacobsen,
Martin Statz,
Noelia Fernandez,
Francesca Falorsi,
Kenji Watanabe,
Takashi Taniguchi,
Zhiyu Dong,
Leonid S. Levitov,
R. Thomas Weitz
Abstract:
Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the bandstructure, featuring two distinct regimes. In one regime, which is well established and widely used, a tunable bandgap is induced by…
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Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the bandstructure, featuring two distinct regimes. In one regime, which is well established and widely used, a tunable bandgap is induced by a large enough transverse displacement field. Another is a gapless metallic band occurring near charge neutrality and at not too strong fields, featuring rich 'fine structure' consisting of four linearly-dispersing Dirac cones with opposite chiralities in each valley and van Hove singularities. Even though BLG was extensively studied experimentally in the last two decades, the evidence of this exotic bandstructure is still elusive, likely due to insufficient energy resolution. Here, rather than probing the bandstructure by direct spectroscopy, we use Landau levels as markers of the energy dispersion and carefully analyze the Landau level spectrum in a regime where the cyclotron orbits of electrons or holes in momentum space are small enough to resolve the distinct mini Dirac cones. We identify the presence of four distinct Dirac cones and map out complex topological transitions induced by electric displacement field. These findings introduce a valuable addition to the toolkit for graphene electronics.
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Submitted 17 November, 2023;
originally announced November 2023.
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Interaction-driven (quasi-) insulating ground states of gapped electron-doped bilayer graphene
Authors:
Anna M. Seiler,
Martin Statz,
Isabell Weimer,
Nils Jacobsen,
Kenji Watanabe,
Takashi Taniguchi,
Zhiyu Dong,
Leonid S. Levitov,
R. Thomas Weitz
Abstract:
Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and superconductivity. This letter reports on a novel family of correlated phases characterized by spin and valley ordering, observed in electron-doped bilayer graphene.…
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Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and superconductivity. This letter reports on a novel family of correlated phases characterized by spin and valley ordering, observed in electron-doped bilayer graphene. The novel correlated phases demonstrate an intriguing non-linear current-bias behavior at ultralow currents that is sensitive to the onset of the phases and is accompanied by an insulating temperature dependence, providing strong evidence for the presence of unconventional charge carrying degrees of freedom originating from ordering. These characteristics cannot be solely attributed to any of the previously reported phases, and are qualitatively different from the behavior seen previously on the hole-doped side. Instead, our observations align with the presence of charge- or spin-density-waves state that open a gap on a portion of the Fermi surface or fully gapped Wigner crystals. The resulting new phases, quasi-insulators in which part of the Fermi surface remains intact or valley-polarized and valley-unpolarized Wigner crystals, coexist with previously known Stoner phases, resulting in an exceptionally intricate phase diagram.
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Submitted 1 August, 2023;
originally announced August 2023.
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Ferroelectric and anomalous quantum Hall states in bare rhombohedral trilayer graphene
Authors:
Felix Winterer,
Fabian R. Geisenhof,
Noelia Fernandez,
Anna M. Seiler,
Fan Zhang,
R. Thomas Weitz
Abstract:
Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like magnets, and an unconventional superconductor in bilayer graphene. Its natural extension, rhombohedral trilayer graphene is predicted to be even more susceptible to…
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Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like magnets, and an unconventional superconductor in bilayer graphene. Its natural extension, rhombohedral trilayer graphene is predicted to be even more susceptible to interactions given its even flatter low-energy bands and larger winding number. Theoretically, five spontaneous quantum Hall phases have been proposed to be candidate ground states. Here, we provide transport evidence for observing four of the five competing ordered states in interaction-maximized, dually-gated, rhombohedral trilayer graphene. In particular, at vanishing but finite magnetic fields, two states with Chern numbers 3 and 6 can be stabilized at elevated and low electric fields, respectively, and both exhibit clear magnetic hysteresis. We also reveal that the quantum Hall ferromagnets of the zeroth Landau level are ferroelectrics with spontaneous layer polarizations even at zero electric field, as evidenced by electric hysteresis. Our findings exemplify the possible birth of rich interacting electron physics in a simple elementary material.
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Submitted 27 June, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Quantum cascade of new correlated phases in trigonally warped bilayer graphene
Authors:
Anna M. Seiler,
Fabian R. Geisenhof,
Felix Winterer,
Kenji Watanabe,
Takashi Taniguchi,
Tianyi Xu,
Fan Zhang,
R. Thomas Weitz
Abstract:
Divergent density of states offers the unique opportunity to explore a wide variety of correlated electron physics. In the thinnest limit, this has been predicted and verified in the ultra-flat bands of magic-angle twisted bilayer graphene, the band touching points of few-layer rhombohedral graphite, and the lightly doped rhombohedral trilayer graphene. The simpler and seemingly better understood…
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Divergent density of states offers the unique opportunity to explore a wide variety of correlated electron physics. In the thinnest limit, this has been predicted and verified in the ultra-flat bands of magic-angle twisted bilayer graphene, the band touching points of few-layer rhombohedral graphite, and the lightly doped rhombohedral trilayer graphene. The simpler and seemingly better understood Bernal bilayer graphene is also susceptible to orbital magnetism-driven phases at charge neutrality, such as layer antiferromagnet and quantum anomalous Hall octet. Here we report the discovery of a cascade of novel correlated phases in the vicinity of electric-field-controlled Lifshitz transitions and van Hove singularities in trigonally warped bilayer graphene. We provide compelling evidence for the observation of Stoner ferromagnets - half and quarter metals. More prominently, we identify signatures consistent with a topologically nontrivial Wigner-Hall crystal at zero magnetic field and its transition to a trivial Wigner crystal, as well as two correlated metals whose behavior deviates from standard Fermi liquids. Our results in this reproducible, tunable, simple system opens a new chapter for studying strongly correlated electrons.
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Submitted 11 November, 2021;
originally announced November 2021.
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Interplay between topological protected valley and quantum Hall edge transport
Authors:
Fabian R. Geisenhof,
Felix Winterer,
Anna M. Seiler,
Jakob Lenz,
Ivar Martin,
R. Thomas Weitz
Abstract:
An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individuall…
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An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of high-quality suspended bilayer graphene. We find that the two-terminal conductance remains approximately constant for low magnetic fields throughout the distinct quantum Hall states since the conduction channels are traded between domain wall and device edges. For high magnetic fields, however, we observe evidence of transport suppression at the domain wall, which can be attributed to the emergence of spectral minigaps. This indicates that stacking domain walls do potentially do not correspond to a topological domain wall in the order parameter.
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Submitted 10 November, 2021;
originally announced November 2021.
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Spontaneous Gully Polarized Quantum Hall States in ABA Trilayer Graphene
Authors:
F. Winterer,
A. M. Seiler,
A. Ghazaryan,
F. R. Geisenhof,
K. Watanabe,
T. Taniguchi,
M. Serbyn,
R. T. Weitz
Abstract:
Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric field, its band structure exhibits several off-center Dirac points (so-called Dirac gullies) in each valley. Here, the formation of Dirac gullies and the interaction…
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Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric field, its band structure exhibits several off-center Dirac points (so-called Dirac gullies) in each valley. Here, the formation of Dirac gullies and the interaction-induced breakdown of gully coherence is explored via magnetotransport measurements in high-quality Bernal-stacked (ABA) trilayer graphene. In the absence of a magnetic field, multiple Lifshitz transitions as function of electric field and charge carrier density indicating the formation of Dirac gullies are identified. In the quantum Hall regime and high electric fields, the emergence of Dirac gullies is evident as an increase in Landau level degeneracy. When tuning both electric and magnetic fields, electron-electron interactions can be controllably enhanced until the gully degeneracy is eventually lifted. The arising correlated ground state is consistent with a previously predicted nematic phase that spontaneously breaks the rotational gully symmetry.
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Submitted 1 September, 2021;
originally announced September 2021.
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Tunable quantum anomalous Hall octet driven by orbital magnetism in bilayer graphene
Authors:
Fabian R. Geisenhof,
Felix Winterer,
Anna M. Seiler,
Jakob Lenz,
Tianyi Xu,
Fan Zhang,
R. Thomas Weitz
Abstract:
The quantum anomalous Hall (QAH) effect - a macroscopic manifestation of chiral band topology at zero magnetic field - has only been experimentally realized by magnetic do** of topological insulators (1 - 3) and delicate design of Moire heterostructures (4 - 8). However, the seemingly simple bilayer graphene without magnetic do** or Moire engineering has long been predicted to host competing o…
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The quantum anomalous Hall (QAH) effect - a macroscopic manifestation of chiral band topology at zero magnetic field - has only been experimentally realized by magnetic do** of topological insulators (1 - 3) and delicate design of Moire heterostructures (4 - 8). However, the seemingly simple bilayer graphene without magnetic do** or Moire engineering has long been predicted to host competing ordered states with QAH effects (9 - 11). Here, we explore states in bilayer graphene with conductance of 2 e2/h that not only survive down to anomalously small magnetic fields and up to temperatures of 5 K, but also exhibit magnetic hysteresis. Together, the experimental signatures provide compelling evidence for orbital magnetism driven QAH behavior with a Chern number tunable via electric and magnetic fields as well as carrier sign. The observed octet of QAH phases is distinct from previous observations due to its peculiar ferrimagnetic and ferrielectric order that is characterized by quantized anomalous charge, spin, valley, and spin-valley Hall behavior.
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Submitted 14 July, 2021;
originally announced July 2021.
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Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits
Authors:
S. Fritz,
A. Seiler,
L. Radtke,
R. Schneider,
M. Weides,
G. Weiß,
D. Gerthsen
Abstract:
This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlO$_{x}$ tunnel barrier. The study is focused on the correlation of the…
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This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlO$_{x}$ tunnel barrier. The study is focused on the correlation of the fabrication conditions, nanostructural and nanochemical properties and the occurrence of two-level tunneling systems with particular emphasis on the AlO$_{x}$-layer. Electron-beam evaporation with two different processes and sputter deposition were used for structure fabrication, and the effect of illumination by ultraviolet light during Al-oxide formation is elucidated. Characterization was performed by analytical transmission electron microscopy and low-temperature dielectric measurements. We show that the fabrication conditions have a strong impact on the nanostructural and nanochemical properties of the layer systems and the properties of two-level tunneling systems. Based on the understanding of the observed structural characteristics, routes are derived towards the fabrication of Al/AlO$_{x}$/Al-layers systems with improved properties.
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Submitted 5 December, 2017;
originally announced December 2017.
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Probing individual tunneling fluctuators with coherently controlled tunneling systems
Authors:
Saskia M. Meißner,
Arnold Seiler,
Jürgen Lisenfeld,
Alexey V. Ustinov,
Georg Weiss
Abstract:
Josephson junctions made from aluminium and its oxide are the most commonly used functional elements for superconducting circuits and qubits. It is generally known that the disordered thin-film AlOx contains atomic tunneling systems. Coherent tunneling systems may couple strongly to a qubit via their electric dipole moment, giving rise to spectral level repulsion. In addition, slowly fluctuating t…
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Josephson junctions made from aluminium and its oxide are the most commonly used functional elements for superconducting circuits and qubits. It is generally known that the disordered thin-film AlOx contains atomic tunneling systems. Coherent tunneling systems may couple strongly to a qubit via their electric dipole moment, giving rise to spectral level repulsion. In addition, slowly fluctuating tunneling systems are observable when they are located close to coherent ones and distort their potentials. This interaction causes telegraphic switching of the coherent tunneling systems' energy splitting. Here, we measure such switching induced by individual fluctuators on time scales from hours to minutes using a superconducting qubit as a detector. Moreover, we extend the range of measurable switching times to millisecond scales by employing a highly sensitive single-photon qubit swap spectroscopy and statistical analysis of the measured qubit states.
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Submitted 1 December, 2017; v1 submitted 16 October, 2017;
originally announced October 2017.
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Attosecond streaking of photoelectron emission from disordered solids
Authors:
W. A. Okell,
T. Witting,
D. Fabris,
C. A. Arrell,
J. Hengster,
S. Ibrahimkutty,
A. Seiler,
M. Barthelmess,
S. Stankov,
D. Y. Lei,
Y. Sonnefraud,
M. Rahmani,
Th. Uphues,
S. A. Maier,
J. P. Marangos,
J. W. G. Tisch
Abstract:
Attosecond streaking of photoelectrons emitted by extreme ultraviolet light has begun to reveal how electrons behave during their transport within simple crystalline solids. Many sample types within nanoplasmonics, thin-film physics, and semiconductor physics, however, do not have a simple single crystal structure. The electron dynamics which underpin the optical response of plasmonic nanostructur…
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Attosecond streaking of photoelectrons emitted by extreme ultraviolet light has begun to reveal how electrons behave during their transport within simple crystalline solids. Many sample types within nanoplasmonics, thin-film physics, and semiconductor physics, however, do not have a simple single crystal structure. The electron dynamics which underpin the optical response of plasmonic nanostructures and wide-bandgap semiconductors happen on an attosecond timescale. Measuring these dynamics using attosecond streaking will enable such systems to be specially tailored for applications in areas such as ultrafast opto-electronics. We show that streaking can be extended to this very general type of sample by presenting streaking measurements on an amorphous film of the wide-bandgap semiconductor tungsten trioxide, and on polycrystalline gold, a material that forms the basis of many nanoplasmonic devices. Our measurements reveal the near-field temporal structure at the sample surface, and photoelectron wavepacket temporal broadening consistent with a spread of electron transport times to the surface.
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Submitted 21 October, 2014;
originally announced October 2014.
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A Fast $\mathcal{L}_p$ Spike Alignment Metric
Authors:
Alexander J. Dubbs,
Brad A. Seiler,
Marcelo O. Magnasco
Abstract:
The metrization of the space of neural responses is an ongoing research program seeking to find natural ways to describe, in geometrical terms, the sets of possible activities in the brain. One component of this program are the {\em spike metrics}, notions of distance between two spike trains recorded from a neuron. Alignment spike metrics work by identifying "equivalent" spikes in one train and…
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The metrization of the space of neural responses is an ongoing research program seeking to find natural ways to describe, in geometrical terms, the sets of possible activities in the brain. One component of this program are the {\em spike metrics}, notions of distance between two spike trains recorded from a neuron. Alignment spike metrics work by identifying "equivalent" spikes in one train and the other. We present an alignment spike metric having $\mathcal{L}_p$ underlying geometrical structure; the $\mathcal{L}_2$ version is Euclidean and is suitable for further embedding in Euclidean spaces by Multidimensional Scaling methods or related procedures. We show how to implement a fast algorithm for the computation of this metric based on bipartite graph matching theory.
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Submitted 17 July, 2009; v1 submitted 17 July, 2009;
originally announced July 2009.
