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An ultra-broadband photonic-chip-based traveling-wave parametric amplifier
Authors:
Nikolai Kuznetsov,
Alberto Nardi,
Alisa Davydova,
Mikhail Churaev,
Johann Riemensberger,
Paul Seidler,
Tobias J. Kippenberg
Abstract:
Optical amplification, crucial for modern communication, primarily relies on erbium-doped fiber amplifiers (EDFAs) to enhance signals without distortion. However, EDFAs only cover a portion of the low-loss spectrum of optical fibers. Optical parametric amplification, utilizing material nonlinearities, offers expanded capacity, but has faced limitations in gain and bandwidth. Addressing this, we pr…
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Optical amplification, crucial for modern communication, primarily relies on erbium-doped fiber amplifiers (EDFAs) to enhance signals without distortion. However, EDFAs only cover a portion of the low-loss spectrum of optical fibers. Optical parametric amplification, utilizing material nonlinearities, offers expanded capacity, but has faced limitations in gain and bandwidth. Addressing this, we present a high-gain continuous-traveling-wave parametric amplifier, surpassing the erbium gain window. Leveraging low-loss gallium phosphide-on-insulator photonic integrated waveguides, we achieve up to 35 dB of parametric gain, with a fiber-to-fiber net gain exceeding 10 dB across a wide wavelength range of approximately 140 nm centered at 1550 nm. We demonstrate the capability to amplify ultra-weak signals, extending over 6 orders of magnitude of input powers, optical frequency combs, and communication signals, highlighting the practical potential of our photonic-chip-based amplifier.
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Submitted 12 April, 2024;
originally announced April 2024.
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Soliton Microcomb Generation in a III-V Photonic Crystal Cavity
Authors:
Alberto Nardi,
Alisa Davydova,
Nikolai Kuznetsov,
Miles H. Anderson,
Charles Möhl,
Johann Riemensberger,
Paul Seidler,
Tobias J. Kippenberg
Abstract:
Photonic crystals, material structures in which the dielectric function varies periodically in one, two, or three dimensions, can provide exquisite control over the propagation and confinement of light. By tailoring their band structure, exceptional optical effects can be achieved, such as slow light propagation or, through the creation of photonic bandgaps, optical cavities with both a high quali…
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Photonic crystals, material structures in which the dielectric function varies periodically in one, two, or three dimensions, can provide exquisite control over the propagation and confinement of light. By tailoring their band structure, exceptional optical effects can be achieved, such as slow light propagation or, through the creation of photonic bandgaps, optical cavities with both a high quality factor and a small mode volume. Photonic crystal cavities have been used to realize compact nano-lasers and achieve strong coupling to quantum emitters, such as semiconductor quantum dots, color centers, or cold atoms. A useful attribute of photonic crystals is the ability to create chirped mirrors. Chir** has underpinned advances in ultra-fast lasers based on bulk mirrors, but has yet to be fully exploited in integrated photonics, where it could provide a means to engineer otherwise unattainable dispersion profiles for a range of nonlinear optical applications, including soliton frequency comb generation. The vast majority of integrated resonators for frequency combs make use of microring geometries, where only waveguide width and height are varied to engineer dispersion. Generation of frequency combs has been demonstrated with one-dimensional photonic crystal cavities made of silicon nitride, but the low index contrast prevents formation of broad soliton combs. We overcome these challenges by using a photonic-crystal Fabry-Pérot resonator made of gallium phosphide, a material with a high refractive index and a Kerr nonlinearity 200 times larger than that of silicon nitride. We employ chirped photonic crystal mirrors to provide anomalous dispersion. With subharmonic pulsed pum** at an average power of 23.6 mW, we are able to access stable dissipative Kerr frequency combs. We demonstrate soliton formation with a 3-dB bandwidth of 3.0 THz, corresponding to a pulse duration of 60 fs.
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Submitted 27 April, 2023; v1 submitted 25 April, 2023;
originally announced April 2023.
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Ultrafast tunable lasers using lithium niobate integrated photonics
Authors:
Viacheslav Snigirev,
Annina Riedhauser,
Grigory Lihachev,
Johann Riemensberger,
Rui Ning Wang,
Charles Moehl,
Mikhail Churaev,
Anat Siddharth,
Guanhao Huang,
Youri Popoff,
Ute Drechsler,
Daniele Caimi,
Simon Hoenl,
Junqiu Liu,
Paul Seidler,
Tobias J. Kippenberg
Abstract:
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications ranging from 5G telecommunication and microwave photonics to microwave-to-optical quantum interfaces. Lithium niobate integrated photonic circuits could equally be…
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Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications ranging from 5G telecommunication and microwave photonics to microwave-to-optical quantum interfaces. Lithium niobate integrated photonic circuits could equally be the basis of integrated narrow-linewidth frequency-agile lasers. Pioneering work on polished lithium niobate crystal resonators has led to the development of electrically tunable narrow-linewidth lasers. Here we report low-noise frequency-agile lasers based on lithium niobate integrated photonics and demonstrate their use for coherent laser ranging. This is achieved through heterogeneous integration of ultra-low-loss silicon nitride photonic circuits with thin-film lithium niobate via direct wafer bonding. This platform features low propagation loss of 8.5 dB/m enabling narrow-linewidth lasing (intrinsic linewidth of 3 kHz) by self-injection locking to a III-V semiconductor laser diode. The hybrid mode of the resonator allows electro-optical laser frequency tuning at a speed of 12 PHz/s with high linearity, low hysteresis and while retaining narrow linewidth. Using this hybrid integrated laser, we perform a proof-of-concept FMCW LiDAR ranging experiment, with a resolution of 15 cm. By fully leveraging the high electro-optic coefficient of lithium niobate, with further improvements in photonic integrated circuits design, these devices can operate with CMOS-compatible voltages, or achieve mm-scale distance resolution. Endowing low loss silicon nitride integrated photonics with lithium niobate, gives a platform with wide transparency window, that can be used to realize ultrafast tunable lasers from the visible to the mid-infrared, with applications from OCT and LiDAR to environmental sensing.
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Submitted 11 August, 2022; v1 submitted 3 December, 2021;
originally announced December 2021.
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A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform
Authors:
Mikhail Churaev,
Rui Ning Wang,
Viacheslav Snigirev,
Annina Riedhauser,
Terence Blésin,
Charles Möhl,
Miles A. Anderson,
Anat Siddharth,
Youri Popoff,
Daniele Caimi,
Simon Hönl,
Johann Riemensberger,
Junqiu Liu,
Paul Seidler,
Tobias J. Kippenberg
Abstract:
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency combs, and microwave-optical transducers. Yet to date, LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using non-standard etching techniqu…
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The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency combs, and microwave-optical transducers. Yet to date, LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using non-standard etching techniques that lack the reproducibility routinely achieved in silicon photonics. Widespread future application of thin-film LiNbO3 requires a reliable and scalable solution using standard processing and precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform that overcomes the abovementioned challenges by employing wafer-scale bonding of thin-film LiNbO3 to planarized low-loss silicon nitride (Si3N4) photonic integrated circuits, a mature foundry-grade integrated photonic platform. The resulting devices combine the substantial Pockels effect of LiNbO3 with the scalability, high-yield, and complexity of the underlying Si3N4 PICs. Importantly, the platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si3N4 waveguides. We find that ten transitions between a mode confined in the Si3N4 PIC and the hybrid LiNbO$_3$ mode produce less than 0.8 dB additional loss, corresponding to a loss per transition not exceeding 0.1 dB. These nearly lossless adiabatic transitions thus link the low-loss passive Si3N4 photonic structures with electro-optic components. We demonstrate high-Q microresonators, optical splitters, electrically tunable photonic dimers, electro-optic frequency combs, and carrier-envelope phase detection of a femtosecond laser on the same platform, thus providing a reliable and foundry-ready solution to low-loss and complex LiNbO3 integrated photonic circuits.
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Submitted 12 September, 2022; v1 submitted 3 December, 2021;
originally announced December 2021.
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Dissipative Quantum Feedback in Measurements Using a Parametrically Coupled Microcavity
Authors:
Liu Qiu,
Guanhao Huang,
Itay Shomroni,
Jiahe Pan,
Paul Seidler,
Tobias J. Kippenberg
Abstract:
Micro- and nanoscale optical or microwave cavities are used in a wide range of classical applications and quantum science experiments, ranging from precision measurements, laser technologies to quantum control of mechanical motion. The dissipative photon loss via absorption, present to some extent in any optical cavity, is known to introduce thermo-optical effects and thereby impose fundamental li…
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Micro- and nanoscale optical or microwave cavities are used in a wide range of classical applications and quantum science experiments, ranging from precision measurements, laser technologies to quantum control of mechanical motion. The dissipative photon loss via absorption, present to some extent in any optical cavity, is known to introduce thermo-optical effects and thereby impose fundamental limits on precision measurements. Here, we theoretically and experimentally reveal that such dissipative photon absorption can result in quantum feedback via in-loop field detection of the absorbed optical field, leading to the intracavity field fluctuations to be squashed or antisquashed. Strikingly, this modifies the optical cavity susceptibility in coherent response measurements and causes excess noise and correlations in incoherent interferometric optomechanical measurements using a cavity. We experimentally observe such unanticipated dissipative dynamics in optomechanical spectroscopy of sideband-cooled optomechanical crystal cavitiess at both cryogenic temperature (approximately 8 K) and ambient conditions. The dissipative feedback introduces effective modifications to the optical cavity linewidth and the optomechanical scattering rate and gives rise to excess imprecision noise in the interferometric quantum measurement of mechanical motion. Such dissipative feedback differs fundamentally from a quantum nondemolition feedback, e.g., optical Kerr squeezing. The dissipative feedback itself always results in an antisqueezed out-of-loop optical field, while it can enhance the coexisting Kerr squeezing under certain conditions. Our result has wide-ranging implications for future dissipation engineering, such as dissipation enhanced sideband cooling and Kerr squeezing, quantum frequency conversion, and nonreciprocity in photonic systems.
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Submitted 5 May, 2022; v1 submitted 29 September, 2021;
originally announced September 2021.
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Microwave-to-optical conversion with a gallium phosphide photonic crystal cavity
Authors:
Simon Hönl,
Youri Popoff,
Daniele Caimi,
Alberto Beccari,
Tobias J. Kippenberg,
Paul Seidler
Abstract:
Electrically actuated optomechanical resonators provide a route to quantum-coherent, bidirectional conversion of microwave and optical photons. Such devices could enable optical interconnection of quantum computers based on qubits operating at microwave frequencies. Here we present a novel platform for microwave-to-optical conversion comprising a photonic crystal cavity made of single-crystal, pie…
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Electrically actuated optomechanical resonators provide a route to quantum-coherent, bidirectional conversion of microwave and optical photons. Such devices could enable optical interconnection of quantum computers based on qubits operating at microwave frequencies. Here we present a novel platform for microwave-to-optical conversion comprising a photonic crystal cavity made of single-crystal, piezoelectric gallium phosphide integrated on pre-fabricated niobium circuits on an intrinsic silicon substrate. The devices exploit spatially extended, sideband-resolved mechanical breathing modes at $\sim$ 3.2 GHz, with vacuum optomechanical coupling rates of up to $g_0/2π\approx$ 300 kHz. The mechanical modes are driven by integrated microwave electrodes via the inverse piezoelectric effect. We estimate that the system could achieve an electromechanical coupling rate to a superconducting transmon qubit of $\sim$ 200 kHz. Our work represents a decisive step towards integration of piezoelectro-optomechanical interfaces with superconducting quantum processors.
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Submitted 27 May, 2021;
originally announced May 2021.
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Nanoscopic charge fluctuations in a gallium phosphide waveguide measured by single molecules
Authors:
Alexey Shkarin,
Dominik Rattenbacher,
Jan Renger,
Simon Hönl,
Tobias Utikal,
Paul Seidler,
Stephan Götzinger,
Vahid Sandoghdar
Abstract:
We present efficient coupling of single organic molecules to a gallium phosphide subwavelength waveguide (nanoguide). By examining and correlating the temporal dynamics of various single-molecule resonances at different locations along the nanoguide, we reveal light-induced fluctuations of their Stark shifts. Our observations are consistent with the predictions of a simple model based on the optic…
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We present efficient coupling of single organic molecules to a gallium phosphide subwavelength waveguide (nanoguide). By examining and correlating the temporal dynamics of various single-molecule resonances at different locations along the nanoguide, we reveal light-induced fluctuations of their Stark shifts. Our observations are consistent with the predictions of a simple model based on the optical activation of a small number of charges in the GaP nanostructure.
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Submitted 5 December, 2020;
originally announced December 2020.
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Emergent Nonlinear Phenomena in a Driven Dissipative Photonic Dimer
Authors:
Alexey Tikan,
Johann Riemensberger,
Kenichi Komagata,
Simon Hönl,
Mikhail Churaev,
Connor Skehan,
Hairun Guo,
Rui Ning Wang,
Junqiu Liu,
Paul Seidler,
Tobias J. Kippenberg
Abstract:
Emergent phenomena are ubiquitous in nature and refer to spatial, temporal, or spatiotemporal pattern formation in complex nonlinear systems driven out of equilibrium that is not contained in the microscopic descriptions at the single-particle level. Examples range from novel phases of matter in both quantum and classical many-body systems, to galaxy formation or neural dynamics. Two characteristi…
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Emergent phenomena are ubiquitous in nature and refer to spatial, temporal, or spatiotemporal pattern formation in complex nonlinear systems driven out of equilibrium that is not contained in the microscopic descriptions at the single-particle level. Examples range from novel phases of matter in both quantum and classical many-body systems, to galaxy formation or neural dynamics. Two characteristic phenomena are length scales that exceed the characteristic interaction length and spontaneous symmetry breaking. Recent advances in integrated photonics indicate that the study of emergent phenomena is possible in complex coupled nonlinear optical systems. Here we demonstrate that out-of-equilibrium driving of a strongly coupled ("dimer") pair of photonic integrated Kerr microresonators, which at the "single-particle" (i.e. individual resonator) level generate well understood dissipative Kerr solitons, exhibit emergent nonlinear phenomena. By exploring the dimer phase diagram, we find unexpected and therefore unpredicted regimes of soliton hop**, spontaneous symmetry breaking, and periodically emerging (in)commensurate dispersive waves. These phenomena are not included in the single-particle description and related to the parametric frequency conversion between hybridized supermodes. Moreover, by controlling supermode hybridization electrically, we achieve wide tunability of spectral interference patterns between dimer solitons and dispersive waves. Our findings provide the first critical step towards the study of emergent nonlinear phenomena in soliton networks and multimode lattices.
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Submitted 23 May, 2020; v1 submitted 13 May, 2020;
originally announced May 2020.
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Laser cooling of a nanomechanical oscillator to the zero-point energy
Authors:
Liu Qiu,
Itay Shomroni,
Paul Seidler,
Tobias J. Kippenberg
Abstract:
Optomechanical cavities in the well-resolved-sideband regime are ideally suited for the study of a myriad of quantum phenomena with mechanical systems, including backaction-evading measurements, mechanical squeezing, and generation of non-classical states. For these experiments, the mechanical oscillator should be prepared in its ground state; residual motion beyond the zero-point motion must be n…
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Optomechanical cavities in the well-resolved-sideband regime are ideally suited for the study of a myriad of quantum phenomena with mechanical systems, including backaction-evading measurements, mechanical squeezing, and generation of non-classical states. For these experiments, the mechanical oscillator should be prepared in its ground state; residual motion beyond the zero-point motion must be negligible. The requisite cooling of the mechanical motion can be achieved using the radiation pressure of light in the cavity by selectively driving the anti-Stokes optomechanical transition. To date, however, laser-absorption heating of optical systems far into the resolved-sideband regime has prohibited strong driving. For deep ground-state cooling, previous studies have therefore resorted to passive cooling in dilution refrigerators. Here, we employ a highly sideband-resolved silicon optomechanical crystal in a $^3$He buffer gas environment at $\sim 2\text{K}$ to demonstrate laser sideband cooling to a mean thermal occupancy of $0.09_{-0.01}^{+0.02}$ quantum (self-calibrated using motional sideband asymmetry), which is $-7.4\text{dB}$ of the oscillator's zero-point energy and corresponds to 92% ground state probability. Achieving such low occupancy by laser cooling opens the door to a wide range of quantum-optomechanical experiments in the optical domain.
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Submitted 25 December, 2019; v1 submitted 25 March, 2019;
originally announced March 2019.
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Two-Tone Optomechanical Instability and Its Fundamental Implications for Backaction-Evading Measurements
Authors:
Itay Shomroni,
Amir Youssefi,
Nick Sauerwein,
Liu Qiu,
Paul Seidler,
Daniel Malz,
Andreas Nunnenkamp,
Tobias J. Kippenberg
Abstract:
While quantum mechanics imposes a fundamental limit on the precision of interferometric measurements of mechanical motion due to measurement backaction, the nonlinear nature of the coupling also leads to parametric instabilities that place practical limits on the sensitivity by limiting the power in the interferometer. Such instabilities have been extensively studied in the context of gravitationa…
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While quantum mechanics imposes a fundamental limit on the precision of interferometric measurements of mechanical motion due to measurement backaction, the nonlinear nature of the coupling also leads to parametric instabilities that place practical limits on the sensitivity by limiting the power in the interferometer. Such instabilities have been extensively studied in the context of gravitational wave detectors, and their presence has recently been reported in Advanced LIGO. Here, we observe experimentally and describe theoretically a new type of optomechanical instability that arises in two-tone backaction-evading (BAE) measurements, designed to overcome the standard quantum limit, and demonstrate the effect in the optical domain with a photonic crystal nanobeam, and in the microwave domain with a micromechanical oscillator coupled to a microwave resonator. In contrast to the well-known oscillatory parametric instability that occurs in single-tone, blue-detuned pum**, which is characterized by a vanishing effective mechanical dam**, the parametric instability in balanced two-tone optomechanics is exponential, and is a result of small detuning errors in the two pump frequencies. Its origin can be understood in a rotating frame as the vanishing of the effective mechanical frequency due to an optical spring effect. Counterintuitively, the instability occurs even in the presence of perfectly balanced intracavity fields, and can occur for both signs of detuning. We find excellent quantitative agreement with our theoretical predictions. Since the constraints on tuning accuracy become stricter with increasing probe power, it imposes a fundamental limitation on BAE measurements, as well as other two-tone schemes. In addition to introducing a new limitation in two-tone BAE measurements, the results also introduce a new type of nonlinear dynamics in cavity optomechanics.
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Submitted 13 November, 2019; v1 submitted 28 December, 2018;
originally announced December 2018.
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Optomechanics with one-dimensional gallium phosphide photonic crystal cavities
Authors:
Katharina Schneider,
Yannick Baumgartner,
Simon Hönl,
Pol Welter,
Herwig Hahn,
Dalziel J. Wilson,
Lukas Czornomaz,
Paul Seidler
Abstract:
Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 μm) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon absorption at telecommunication wavelengths. Heating due to strongly confined light fields is therefore greatly reduced. Here, we investigate the benefits of these proper…
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Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 μm) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon absorption at telecommunication wavelengths. Heating due to strongly confined light fields is therefore greatly reduced. Here, we investigate the benefits of these properties for cavity optomechanics. Utilizing a recently developed fabrication scheme based on direct wafer bonding, we realize integrated one-dimensional photonic crystal cavities made of gallium phosphide with optical quality factors as high as $1.1\times10^5$. We optimize their design to couple the optical eigenmode at $\approx 200$ THz via radiation pressure to a co-localized mechanical mode with a frequency of 3 GHz, yielding sideband-resolved devices. The high vacuum optomechanical coupling rate ($g_0=2π\times 400$ kHz) permits amplification of the mechanical mode into the so-called mechanical lasing regime with input power as low as $\approx 20$ μW. The observation of mechanical lasing implies a multiphoton cooperativity of $C>1$, an important threshold for the realization of quantum state transfer protocols. Because of the reduced thermo-optic resonance shift, optomechanically induced transparency can be detected at room temperature in addition to the normally observed optomechanically induced absorption.
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Submitted 3 December, 2018;
originally announced December 2018.
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Integrated gallium phosphide nonlinear photonics
Authors:
Dalziel J. Wilson,
Katharina Schneider,
Simon Hoenl,
Miles Anderson,
Tobias J. Kippenberg,
Paul Seidler
Abstract:
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $χ^{(2)}$ and $χ^{(3)}$ coefficients, a high refractive index ($>3$), and transparency from visible to long-infrared wavelengths ($0.55-11\,μ$m)---its application as an integrated photonics material has been little studied. Here we intro…
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Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $χ^{(2)}$ and $χ^{(3)}$ coefficients, a high refractive index ($>3$), and transparency from visible to long-infrared wavelengths ($0.55-11\,μ$m)---its application as an integrated photonics material has been little studied. Here we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer bonding approach to realize integrated waveguides with 1.2 dB/cm loss in the telecommunications C-band (on par with Si-on-insulator). High quality $(Q> 10^5)$, grating-coupled ring resonators are fabricated and studied. Employing a modulation transfer approach, we obtain a direct experimental estimate of the nonlinear index of GaP at telecommunication wavelengths: $n_2=1.2(5)\times 10^{-17}\,\text{m}^2/\text{W}$. We also observe Kerr frequency comb generation in resonators with engineered dispersion. Parametric threshold powers as low as 3 mW are realized, followed by broadband ($>100$ nm) frequency combs with sub-THz spacing, frequency-doubled combs and, in a separate device, efficient Raman lasing. These results signal the emergence of GaP-on-insulator as a novel platform for integrated nonlinear photonics.
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Submitted 23 August, 2018; v1 submitted 10 August, 2018;
originally announced August 2018.
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Highly selective dry etching of GaP in the presence of Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P
Authors:
Simon Hönl,
Herwig Hahn,
Yannick Baumgartner,
Lukas Czornomaz,
Paul Seidler
Abstract:
We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P). Utilizing mixtures of silicon tetrachloride (SiCl$_4$) and sulfur hexafluoride (SF$_6$), selectivities exceeding 2700:1 are achieved at…
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We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P). Utilizing mixtures of silicon tetrachloride (SiCl$_4$) and sulfur hexafluoride (SF$_6$), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm/min. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl$_4$ to SF$_6$. The process enables the use of thin Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P stop layers even at aluminum contents of a few percent.
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Submitted 19 January, 2018;
originally announced January 2018.
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Gallium phosphide-on-silicon dioxide photonic devices
Authors:
Katharina Schneider,
Pol Welter,
Yannick Baumgartner,
Herwig Hahn,
Lukas Czornomaz,
Paul Seidler
Abstract:
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits direct wafer bonding of a GaP/Al$_x$Ga$_{1-x}$P/GaP heterostructure onto a SiO$_2$-on-Si wafer followed by removal of the GaP substrate and the Al$_x$Ga$_{1-x}$P s…
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The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits direct wafer bonding of a GaP/Al$_x$Ga$_{1-x}$P/GaP heterostructure onto a SiO$_2$-on-Si wafer followed by removal of the GaP substrate and the Al$_x$Ga$_{1-x}$P stop layer. Photonic devices such as grating couplers, waveguides, and ring resonators are patterned by inductively coupled-plasma reactive-ion etching in the top GaP device layer. The peak coupling efficiency of the fabricated grating couplers is as high as 4.8 dB. Optical quality factors of 17000 as well as second- and third-harmonic generation are observed with the ring resonators. Because the large bandgap of GaP provides for low two-photon absorption at telecommunication wavelengths, the high-yield fabrication of GaP-on-insulator photonic devices enabled by this work is especially interesting for applications in nanophotonics, where high quality factors or low mode volumes can produce high electric field intensities. The large bandgap also enables integrated photonic devices operating at visible wavelengths.
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Submitted 8 January, 2018;
originally announced January 2018.
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Strong optomechanical coupling in a slotted photonic crystal nanobeam cavity with an ultrahigh quality factor-to-mode volume ratio
Authors:
Katharina Schneider,
Paul Seidler
Abstract:
We describe the design, fabrication, and characterization of a one-dimensional silicon photonic crystal cavity in which a central slot is used to enhance the overlap between highly localized optical and mechanical modes. The optical mode has an extremely small mode volume of 0.017 $(λ_{vac}/n)^3$, and an optomechanical vacuum coupling rate of 310 kHz is measured. With optical quality factors up to…
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We describe the design, fabrication, and characterization of a one-dimensional silicon photonic crystal cavity in which a central slot is used to enhance the overlap between highly localized optical and mechanical modes. The optical mode has an extremely small mode volume of 0.017 $(λ_{vac}/n)^3$, and an optomechanical vacuum coupling rate of 310 kHz is measured. With optical quality factors up to $1.2 \cdot 10^5$, fabricated devices are in the resolved-sideband regime. The electric field has its maximum at the slot wall and couples to the in-plane breathing motion of the slot. The optomechanical coupling is thus dominated by the moving-boundary effect, which we simulate to be six times greater than the photoelastic effect, in contrast to most structures, where the photoelastic effect is often the primary coupling mechanism.
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Submitted 8 June, 2016;
originally announced June 2016.
