Showing 1–50 of 103 results for author: Schwingenschlögl, U

Keldysh Theory of Thermal Transport in Multiband Hamiltonians

Authors: Luqman Saleem, Udo Schwingenschlogl, Aurelien Manchon

Abstract: We establish a comprehensive theoretical framework for systems subjected to a static uniform temperature gradient, employing the non-equilibrium Keldysh-Dyson formalism. This framework interprets the statistical force due to the temperature gradient as a mechanical force, utilizing both Luttinger's scalar and Moreno-Coleman-Tatara's vector potentials, which collectively emulate the gauge invarianc… ▽ More We establish a comprehensive theoretical framework for systems subjected to a static uniform temperature gradient, employing the non-equilibrium Keldysh-Dyson formalism. This framework interprets the statistical force due to the temperature gradient as a mechanical force, utilizing both Luttinger's scalar and Moreno-Coleman-Tatara's vector potentials, which collectively emulate the gauge invariance stemming from the conservation of energy. Our approach has the ability to treat heat current and heat magnetization on an equal footing, thereby extending and generalizing previous formalisms. The derived result for the thermal conductivity is applied to investigate the thermal characteristics of Weyl magnons in a stacked honeycomb ferromagnet featuring a trivial insulator phase, a magnon Chern insulator phase, and three Weyl magnon phases. Against the expectation from the Berry curvature, the magnon Chern insulator phase exhibits the highest transverse thermal conductivity. △ Less

Submitted 31 January, 2024; originally announced January 2024.

Comments: 15 pages, 8 figures

Fluctuation-mediated spin-orbit torque enhancement in the noncollinear antiferromagnet Mn3Ni0.35Cu0.65N

Authors: Arnab Bose, Tom G. Saunderson, Aga Shahee, Lichuan Zhang, Tetsuya Hajiri, Adithya Rajan, Dongwook Go, Hidefumi Asano, Udo Schwingenschlögl, Aurelien Manchon, Yuriy Mokrousov, Mathias Kläui

Abstract: The role of spin fluctuations near magnetic phase transitions is crucial for generating various exotic phenomena, including anomalies in the extraordinary Hall effect, excess spin-current generation through the spin-Hall effect (SHE), and enhanced spin-pum**, amongst others. In this study, we experimentally investigate the temperature dependence of spin-orbit torques (SOTs) generated by Mn3Ni0.3… ▽ More The role of spin fluctuations near magnetic phase transitions is crucial for generating various exotic phenomena, including anomalies in the extraordinary Hall effect, excess spin-current generation through the spin-Hall effect (SHE), and enhanced spin-pum**, amongst others. In this study, we experimentally investigate the temperature dependence of spin-orbit torques (SOTs) generated by Mn3Ni0.35Cu0.65N (MNCN), a member of the noncollinear antiferromagnetic family that exhibits unconventional magnetotransport properties. Our work uncovers a strong and nontrivial temperature dependence of SOTs, peaking near the Néel temperature of MNCN, which cannot be explained by conventional intrinsic and extrinsic scattering mechanisms of the SHE. Notably, we measure a maximum SOT efficiency of 30%, which is substantially larger than that of commonly studied nonmagnetic materials such as Pt. Theoretical calculations confirm a negligible SHE and a strong orbital Hall effect that can explain the observed SOTs. We propose a previously unidentified mechanism wherein fluctuating antiferromagnetic moments trigger the generation of substantial orbital currents near the Néel temperature due to the emergence of scalar spin chirality. Our findings present an approach for enhancing SOTs, which holds promise for magnetic memory applications by leveraging antiferromagnetic spin fluctuations to amplify both orbital and spin currents. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Revealing the higher-order spin nature of the Hall effect in non-collinear antiferromagnet $\mathrm{Mn_3Ni_{0.35}Cu_{0.65}N}$

Authors: Adithya Rajan, Tom G. Saunderson, Fabian R. Lux, Rocío Yanes Díaz, Hasan M. Abdullah, Arnab Bose, Beatrice Bednarz, Jun-Young Kim, Dongwook Go, Tetsuya Hajiri, Gokaran Shukla, Olena Gomonay, Yugui Yao, Wanxiang Feng, Hidefumi Asano, Udo Schwingenschlögl, Luis López-Díaz, Jairo Sinova, Yuriy Mokrousov, Aurélien Manchon, Mathias Kläui

Abstract: Ferromagnets generate an anomalous Hall effect even without the presence of a magnetic field, something that conventional antiferromagnets cannot replicate but noncollinear antiferromagnets can. The anomalous Hall effect governed by the resistivity tensor plays a crucial role in determining the presence of time reversal symmetry and the topology present in the system. In this work we reveal the co… ▽ More Ferromagnets generate an anomalous Hall effect even without the presence of a magnetic field, something that conventional antiferromagnets cannot replicate but noncollinear antiferromagnets can. The anomalous Hall effect governed by the resistivity tensor plays a crucial role in determining the presence of time reversal symmetry and the topology present in the system. In this work we reveal the complex origin of the anomalous Hall effect arising in noncollinear antiferromagnets by performing Hall measurements with fields applied in selected directions in space with respect to the crystalline axes. Our coplanar magnetic field geometry goes beyond the conventional perpendicular field geometry used for ferromagnets and allows us to suppress any magnetic dipole contribution. It allows us to map the in-plane anomalous Hall contribution and we demonstrate a 120$^\circ$ symmetry which we find to be governed by the octupole moment at high fields. At low fields we subsequently discover a surprising topological Hall-like signature and, from a combination of theoretical techniques, we show that the spins can be recast into dipole, emergent octupole and noncoplanar effective magnetic moments. These co-existing orders enable magnetization dynamics unachievable in either ferromagnetic or conventional collinear antiferromagnetic materials. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Phase engineering in tantalum sulfide monolayers on Au(111)

Authors: Daniela Dombrowski, Abdus Samad, Kai Mehlich, Thais Chagas, Udo Schwingenschlögl, Carsten Busse

Abstract: We prepare monolayers of tantalum sulfide on Au(111) by evaporation of Ta in a reactive background of H$_2$S. Under sulfur-rich conditions, monolayers of 2H-TaS$_2$ develop, whereas under sulfur-poor conditions TaS forms, a structure that can be derived from 2H-TaS$_2$ by removal of the bottom S layer. We analyse the alignment of the layers with respect to the substrate and the relation with the d… ▽ More We prepare monolayers of tantalum sulfide on Au(111) by evaporation of Ta in a reactive background of H$_2$S. Under sulfur-rich conditions, monolayers of 2H-TaS$_2$ develop, whereas under sulfur-poor conditions TaS forms, a structure that can be derived from 2H-TaS$_2$ by removal of the bottom S layer. We analyse the alignment of the layers with respect to the substrate and the relation with the domains in the Au(111) herringbone reconstruction using scanning tunneling microscopy (STM). With the help of density functional theory (DFT) calculations we can determine the registry of the two phases with the substrate. We develop a growth process that allows preparation of uniquely oriented 2H-TaS$_2$ on Au(111). 2H-TaS$_2$ and TaS have a remarkably similar in-plane lattice structure and we observe the formation of lateral 2H-TaS$_2$-TaS heterostructures with atomically well-defined and defect-free boundaries. We observe mirror twin boundaries within 2H-TaS$_2$ along the S- and Ta-edge. △ Less

Submitted 28 November, 2022; originally announced November 2022.

Journal ref: 2D Mater. 10 025005 (2023)

Lattice Instability and Ultralow Lattice Thermal Conductivity of Layered PbIF

Authors: N. Yedukondalu, Aamir Shafique, S. C. Rakesh Roshan, Mohamed Barhoumi, Rajmohan Muthaiah, Lars Ehm, John B. Parise, Udo Schwingenschlögl

Abstract: Understanding the interplay between various design strategies (for instance, bonding heterogeneity and lone pair induced anharmonicity) to achieve ultralow lattice thermal conductivity ($κ_l$) is indispensable for discovering novel functional materials for thermal energy applications. In the present study, we investigate layered PbXF (X = Cl, Br, I), which offers bonding heterogeneity through the… ▽ More Understanding the interplay between various design strategies (for instance, bonding heterogeneity and lone pair induced anharmonicity) to achieve ultralow lattice thermal conductivity ($κ_l$) is indispensable for discovering novel functional materials for thermal energy applications. In the present study, we investigate layered PbXF (X = Cl, Br, I), which offers bonding heterogeneity through the layered crystal structure, anharmonicity through the Pb$^{2+}$ $6s^2$ lone pair, and phonon softening through the mass difference between F and Pb/X. The weak inter-layer van der Waals bonding and the strong intra-layer ionic bonding with partial covalent bonding result in a significant bonding heterogeneity and a poor phonon transport in the out-of-plane direction. Large average Grüneisen parameters ($\geq$ 2.5) demonstrate strong anharmonicity. The computed phonon dispersions show flat bands, which suggest short phonon lifetimes, especially for PbIF. Enhanced Born effective charges are due to cross-band-gap hybridization. PbIF shows lattice instability at a small volume expansion of 0.1$\%$. The $κ_l$ values obtained by the two channel transport model are 20-50$\%$ higher than those obtained by solving the Boltzmann transport equation. Overall, ultralow $κ_l$ values are found at 300 K, especially for PbIF. We propose that the interplay of bonding heterogeneity, lone pair induced anharmonicity, and constituent elements with high mass difference aids the design of low $κ_l$ materials for thermal energy applications. △ Less

Submitted 2 September, 2022; originally announced September 2022.

Observation of cnoidal wave localization in non-linear topolectric circuits

Authors: Hendrik Hohmann, Tobias Hofmann, Tobias Helbig, Stefan Imhof, Hauke Brand, Lavi K. Upreti, Alexander Stegmaier, Alexander Fritzsche, Tobias Müller, Udo Schwingenschlögl, Ching Hua Lee, Martin Greiter, Laurens W. Molenkamp, Tobias Kießling, Ronny Thomale

Abstract: We observe a localized cnoidal (LCn) state in an electric circuit network. Its formation derives from the interplay of non-linearity and the topology inherent to a Su-Schrieffer-Heeger (SSH) chain of inductors. Varicap diodes act as voltage-dependent capacitors, and create a non-linear on-site potential. For a sinusoidal voltage excitation around midgap frequency, we show that the voltage response… ▽ More We observe a localized cnoidal (LCn) state in an electric circuit network. Its formation derives from the interplay of non-linearity and the topology inherent to a Su-Schrieffer-Heeger (SSH) chain of inductors. Varicap diodes act as voltage-dependent capacitors, and create a non-linear on-site potential. For a sinusoidal voltage excitation around midgap frequency, we show that the voltage response in the non-linear SSH circuit follows the Korteweg-de Vries equation. The topological SSH boundary state which relates to a midgap impedance peak in the linearized limit is distorted into the LCn state in the non-linear regime, where the cnoidal eccentricity decreases from edge to bulk. △ Less

Submitted 20 June, 2022; originally announced June 2022.

Journal ref: Phys. Rev. Research 5, L012041 (2023)

Experimental identification of the second-order non-Hermitian skin effect with physics-graph-informed machine learning

Authors: Ce Shang, Shuo Liu, Ruiwen Shao, Peng Han, Xiaoning Zang, Xiangliang Zhang, Khaled Nabil Salama, Wenlong Gao, Ching Hua Lee, Ronny Thomale, Aurelien Manchon, Shuang Zhang, Tie Jun Cui, Udo Schwingenschlogl

Abstract: Topological phases of matter are conventionally characterized by the bulk-boundary correspondence in Hermitian systems: The topological invariant of the bulk in $d$ dimensions corresponds to the number of $(d-1)$-dimensional boundary states. By extension, higher-order topological insulators reveal a bulk-edge-corner correspondence, such that $n$-th order topological phases feature $(d-n)$-dimensio… ▽ More Topological phases of matter are conventionally characterized by the bulk-boundary correspondence in Hermitian systems: The topological invariant of the bulk in $d$ dimensions corresponds to the number of $(d-1)$-dimensional boundary states. By extension, higher-order topological insulators reveal a bulk-edge-corner correspondence, such that $n$-th order topological phases feature $(d-n)$-dimensional boundary states. The advent of non-Hermitian topological systems sheds new light on the emergence of the non-Hermitian skin effect (NHSE) with an extensive number of boundary modes under open boundary conditions. Still, the higher-order NHSE remains largely unexplored, particularly in the experiment. We introduce an unsupervised approach -- physics-graph-informed machine learning (PGIML) -- to enhance the data mining ability of machine learning with limited domain knowledge. Through PGIML, we experimentally demonstrate the second-order NHSE in a two-dimensional non-Hermitian topolectrical circuit. The admittance spectra of the circuit exhibit an extensive number of corner skin modes and extreme sensitivity of the spectral flow to the boundary conditions. The violation of the conventional bulk-boundary correspondence in the second-order NHSE implies that modification of the topological band theory is inevitable in higher dimensional non-Hermitian systems. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Protected valley states and generation of valley- and spin-polarized current in monolayer MA2Z4

Authors: Jiaren Yuan, Qingyuan Wei, Minglei Sun, Xiaohong Yan, Yongqing Cai, Lei Shen, Udo Schwingenschlögl

Abstract: The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As) family are direct band-gap semiconductors with protected valley states and that circularly polarized infrared light can induce valley-selective inter-band transition… ▽ More The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As) family are direct band-gap semiconductors with protected valley states and that circularly polarized infrared light can induce valley-selective inter-band transitions. Our optovalleytronic device demonstrates a close to 100% valley- and spin-polarized current under in-plane bias and circularly polarized infrared light, which can be exploited to encode, process, and store information. △ Less

Submitted 11 December, 2021; originally announced December 2021.

Comments: 6 figures

Topologically stable bimerons and skyrmions in vanadium dichalcogenide Janus monolayers

Authors: Slimane Laref, V. M. L. D. P. Goli, Idris Smaili, Udo Schwingenschlögl, Aurélien Manchon

Abstract: We investigate the magnetic phase diagram of 1T-vanadium dichalcogenide monolayers in Janus configuration (VSeTe, VSSe, and VSTe) from first principles. The magnetic exchange, magnetocrystalline anisotropy and Dzyaloshinskii-Moriya interaction (DMI) are computed using density functional theory calculations, while the temperature- and field-dependent magnetic phase diagram is simulated using large-… ▽ More We investigate the magnetic phase diagram of 1T-vanadium dichalcogenide monolayers in Janus configuration (VSeTe, VSSe, and VSTe) from first principles. The magnetic exchange, magnetocrystalline anisotropy and Dzyaloshinskii-Moriya interaction (DMI) are computed using density functional theory calculations, while the temperature- and field-dependent magnetic phase diagram is simulated using large-scale atomistic spin modeling in the presence of thermal fluctuations. The boundaries between magnetic ordered phases and paramagnetic phases are determined by cross-analyzing the average topological charge with the magnetic susceptibility and its derivatives. We find that in such Janus monolayers, DMI is large enough to stabilize non-trivial chiral textures. In VSeTe monolayer, an asymmetrical bimeron lattice state is stabilized for in-plane field configuration whereas skyrmion lattice is formed for out-of-plane field configuration. In VSSe monolayer, a skyrmion lattice is stabilized for out-of-plane field configuration. This study demonstrates that non-centrosymmetric van der Waals magnetic monolayers can support topological textures close to room temperature. △ Less

Submitted 16 November, 2020; originally announced November 2020.

Comments: 9 pages, 7 figures

Second-order topological insulator and fragile topology in topological circuitry simulation

Authors: Ce Shang, Xiaoning Zang, Wenlong Gao, Udo Schwingenschlögl, Aurélien Manchon

Abstract: Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern insulators with opposite chiralities connected by interlayer coupling. To characterize the bulk-corner correspondence, we establish a Jacobian-transformed nested Wilson… ▽ More Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern insulators with opposite chiralities connected by interlayer coupling. To characterize the bulk-corner correspondence, we establish a Jacobian-transformed nested Wilson loop method and an edge theory that are applicable to a wider class of higher-order topological systems. The corresponding topological invariant admits a filling anomaly of the corner modes with fractional charges. The system manifests a fragile topological phase characterized by the absence of a Wannier gap in the Wilson loop spectrum. Furthermore, we argue that the proposed approach can be generalized to multilayers. Our work offers perspectives for exploring and understanding higher-order topological phenomena. △ Less

Submitted 19 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Janus Monolayers of Magnetic Transition Metal Dichalcogenides as an All-in-One Platform for Spin-Orbit Torque

Authors: Idris Smaili, Slimane Laref, Jose H. Garcia, Udo Schwingenschlogl, Stephan Roche, Aurelien Manchon

Abstract: We theoretically predict that vanadium-based Janus dichalcogenide monolayers constitute an ideal platform for spin-orbit-torque memories. Using first principles calculations, we demonstrate that magnetic exchange and magnetic anisotropy energies are higher for heavier chalcogen atoms, while the broken inversion symmetry in the Janus form leads to the emergence of Rashba-like spin-orbit coupling. T… ▽ More We theoretically predict that vanadium-based Janus dichalcogenide monolayers constitute an ideal platform for spin-orbit-torque memories. Using first principles calculations, we demonstrate that magnetic exchange and magnetic anisotropy energies are higher for heavier chalcogen atoms, while the broken inversion symmetry in the Janus form leads to the emergence of Rashba-like spin-orbit coupling. The spin-orbit torque efficiency is evaluated using optimized quantum transport methodology and found to be comparable to heavy nonmagnetic metals. The coexistence of magnetism and spin-orbit coupling in such materials with tunable Fermi-level opens new possibilities for monitoring magnetization dynamics in the perspective of non-volatile magnetic random access memories. △ Less

Submitted 15 July, 2020; originally announced July 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 104, 104415 (2021)

Site dependency of the magnetism for Mn adsorption on MgO/Ag(001): a combined DFT$+U$ and STM investigation

Authors: Shruba Gangopadhyay, Thaneshwor P. Kaloni, Udo Udo Schwingenschlögl, Barbara A. Jones

Abstract: Theoretical and experimental investigation of the electronic and magnetic structure of transition metal atoms on an insulating interface with a metallic substrate at low temperatures is quite challenging. In this paper, we show a density functional theory plus Hubbard $U$ based protocol to study an Mn adatom on three symmetrically allowed absorption sites, namely on O, hollow (between two Mg and t… ▽ More Theoretical and experimental investigation of the electronic and magnetic structure of transition metal atoms on an insulating interface with a metallic substrate at low temperatures is quite challenging. In this paper, we show a density functional theory plus Hubbard $U$ based protocol to study an Mn adatom on three symmetrically allowed absorption sites, namely on O, hollow (between two Mg and two O) and on Mg on MgO(001). We added a thick enough(bulk-like) metallic Ag slab beneath MgO for faithful replication of scanning tunneling microscopy (STM) experiments. Our study reveals that to determine the stable most binding site, we need to obtain a Hubbard $U$ value from the density functional theory(DFT) calculations, and our results show agreement with STM experiments. Our calculated Hubbard $U$ values for the three adatom sites are different. When Mn sits on O, it retains 2.4 $μ_B$ spin moment, close to its atomic spin moment. However, when Mn sits on other adatom sites, the spin moment decreases. Using the atom projected density of states, we find Mn on O atom shows very narrow crystal field splitting among \textit{d} orbitals, whereas on other adatom sites Mn \textit{d} orbitals show significant splitting. We calculate charge and spin densities and show vertical and horizontal propagation of charge and spin density varies widely between sites. Mn on Mg top shows an unusual feature, that Mn pushes Mg below, to make a coplanar of Mn geometry with the four oxygen atoms. In addition, we explained the reason for spin leaking down to the Ag layers. Mn on MgO/Ag does not show any spin-flip behavior in the STM, an unusual phenomenon, and we used our first principles-based approach to explain this unique observation. △ Less

Submitted 14 February, 2020; originally announced February 2020.

Comments: 10 pages, 8 figures

Identification and Resolution of Unphysical Multielectron Excitations in the Real-Time Time-Dependent Kohn-Sham Formulation

Authors: Xiaoning Zang, Udo Schwingenschlogl, Mark T. Lusk

Abstract: We resolve a fundamental issue associated with the conventional Kohn-Sham formulation of real-time time-dependent density functional theory. We show that unphysical multielectron excitations, generated during time propagation of the Kohn-Sham equations due to fixation of the total number of Kohn-Sham orbitals and their occupations, result in incorrect electron density and, therefore, wrong predict… ▽ More We resolve a fundamental issue associated with the conventional Kohn-Sham formulation of real-time time-dependent density functional theory. We show that unphysical multielectron excitations, generated during time propagation of the Kohn-Sham equations due to fixation of the total number of Kohn-Sham orbitals and their occupations, result in incorrect electron density and, therefore, wrong predictions of physical properties. A new formulation is proposed in that the number of Kohn-Sham orbitals and their occupations are updated on the fly, the unphysical multielectron excitations are removed, and the correct electron density is determined. The correctness of the new formulation is demonstrated by simulations of Rabi oscillation, as analytical results are available for comparison in the case of noninteracting electrons. △ Less

Submitted 23 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Lett. 124, 026402 (2020)

Artificial gauge fields and topological insulators in Moire superlattices

Authors: Ce Shang, Adel Abbout, Xiaoning Zang, Udo Schwingenschlogl, Aurelien Manchon

Abstract: We propose an innovative quantum emulator based on Moire superlattices showing that, by employing periodical modulation on each lattice site, one can create tunable, artificial gauge fields with imprinting Peierls phases on the hop** parameters and realize an analog of novel Haldane-like phase. As an application, we provide a methodology to directly quantify the topological invariant in such a s… ▽ More We propose an innovative quantum emulator based on Moire superlattices showing that, by employing periodical modulation on each lattice site, one can create tunable, artificial gauge fields with imprinting Peierls phases on the hop** parameters and realize an analog of novel Haldane-like phase. As an application, we provide a methodology to directly quantify the topological invariant in such a system from a dynamical quench process. This design shows a robustly integrated platform which opens a new door to investigate topological physics. △ Less

Submitted 1 December, 2019; originally announced December 2019.

The origin of the vanadium dioxide transition entropy

Authors: Thomas Ambrose Mellan, Hao Wang, Udo Schwingenschlögl, Ricardo Grau-Crespo

Abstract: The reversible metal-insulator transition in VO$_2$ at $T_\text{C} \approx 340$ K has been closely scrutinized yet its thermodynamic origin remains ambiguous. We discuss the origin of the transition entropy by calculating the electron and phonon contributions at $T_\text{C}$ using density functional theory. The vibration frequencies are obtained from harmonic phonon calculations, with the soft mod… ▽ More The reversible metal-insulator transition in VO$_2$ at $T_\text{C} \approx 340$ K has been closely scrutinized yet its thermodynamic origin remains ambiguous. We discuss the origin of the transition entropy by calculating the electron and phonon contributions at $T_\text{C}$ using density functional theory. The vibration frequencies are obtained from harmonic phonon calculations, with the soft modes that are imaginary at zero temperature renormalized to real values at $T_\text{C}$ using experimental information from diffuse x-ray scattering at high-symmetry wavevectors. Gaussian Process Regression is used to infer the transformed frequencies for wavevectors across the whole Brillouin zone, and in turn compute the finite temperature phonon partition function to predict transition thermodynamics. Using this method, we predict the phase transition in VO$_2$ is driven five to one by phonon entropy over electronic entropy, and predict a total transition entropy that accounts for $95$ % of the calorimetric value. △ Less

Submitted 24 January, 2019; v1 submitted 27 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. B 99, 064113 (2019)

Optical properties of BAlN and BGaN for applications in latticematched UV optical structures

Authors: Feras AlQatari, Muhammad Sajjad, Ronghui Lin, Kuang-Hui Li, Udo Schwingenschlogl, Xiaohang Li

Abstract: The optical properties of BAlN and BGaN ternary alloys are investigated using first-principle calculation. Hybrid density functional theory is applied to determine the refractive indices of different alloys. A peculiar non-linear behavior of the static refractive index as a function of boron composition is found. The results of this calculation are interpolated to generate a three dimensional data… ▽ More The optical properties of BAlN and BGaN ternary alloys are investigated using first-principle calculation. Hybrid density functional theory is applied to determine the refractive indices of different alloys. A peculiar non-linear behavior of the static refractive index as a function of boron composition is found. The results of this calculation are interpolated to generate a three dimensional dataset, which could be used for designing a myriad of strained and strain-free optoelectronic and photonic devices. This is then used to find a lattice-matched heterostructure optimized for DBR applications (B0.108Ga0.892N/AlN). A DBR design with 25 pairs at a wavelength of 375 nm is found to have peak reflectivity of 99.8% and a bandwidth of 26 nm. △ Less

Submitted 21 May, 2020; v1 submitted 27 March, 2018; originally announced March 2018.

Comments: The third version of the article is identical to the second. There was an error in the spelling of an author's name that is now corrected

S-wave elastic scattering of ${\it o}$-Ps from $\text{H}_2$ at low energy

Authors: J. -Y. Zhang, M. -S. Wu, Y. Qian, X. Gao, Y. -J. Yang, K. Varga, Z. -C. Yan, U. Schwingenschlögl

Abstract: The confined variational method is applied to investigate the low-energy elastic scattering of ortho-positronium from $\text{H}_2$ by first-principles quantum mechanics. Describing the correlation effect with explicitly correlated Gaussians, we obtain accurate $S$-wave phase shifts and pick-off annihilation parameters for different incident momenta. By a least-squares fit of the data to the effect… ▽ More The confined variational method is applied to investigate the low-energy elastic scattering of ortho-positronium from $\text{H}_2$ by first-principles quantum mechanics. Describing the correlation effect with explicitly correlated Gaussians, we obtain accurate $S$-wave phase shifts and pick-off annihilation parameters for different incident momenta. By a least-squares fit of the data to the effective-range theory, we determine the $S$-wave scattering length, $A_s=2.06a_0$, and the zero-energy value of the pick-off annihilation parameter, $^1\!\text{Z}_\text{eff}=0.1858$. The obtained $^1\!\text{Z}_\text{eff}$ agrees well with the precise experimental value of $0.186(1)$ (J.\ Phys.\ B \textbf{16}, 4065 (1983)) and the obtained $A_s$ agrees well with the value of $2.1(2)a_0$ estimated from the average experimental momentum-transfer cross section for Ps energy below 0.3 eV (J.\ Phys.\ B \textbf{36}, 4191 (2003)). △ Less

Submitted 8 March, 2018; originally announced March 2018.

Comments: 5 pages

Journal ref: Phys. Rev. A 100, 032701 (2019)

Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures

Authors: C. Morari, W. H. Appelt, A. Prinz-Zwick, U. Eckern, U. Schwingenschlögl, A. Östlin, L. Chioncel

Abstract: We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of NiMnSb in the scattering region. We investigate the dependence of the transmission function computed within the local spin density approximation (LSDA) of the density functional theory (DFT) on the number of half-metallic units in the scattering region. For a single NiMnSb unit the transmiss… ▽ More We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of NiMnSb in the scattering region. We investigate the dependence of the transmission function computed within the local spin density approximation (LSDA) of the density functional theory (DFT) on the number of half-metallic units in the scattering region. For a single NiMnSb unit the transmission function displays a spin polarization of around 50 % in a window of 1 eV centered around the Fermi level. By increasing the number of layers an almost complete spin polarization of the transmission is obtained in the same energy window. Supplementing the DFT-LSDA calculations with local electronic interactions, of Hubbard-type on the Mn sites, leads to a hybridization between the interface and many-body states. The significant reduction of the spin polarization seen in the density of states is not apparent in the spin-polarization of the conduction electron transmission, which suggests the localized nature of the hybridized interface and many-body induced states. △ Less

Submitted 4 September, 2017; originally announced September 2017.

Comments: 25 pages, 6 figures

Journal ref: Phys. Rev. B 96, 205137 (2017)

Thermoelectric properties of the misfit cobaltate Ca$_3$Co$_4$O$_9$

Authors: Bin Amin, Ulrich Eckern, Udo Schwingenschlögl

Abstract: The layered misfit cobaltate Ca$_3$Co$_4$O$_9$, also known as Ca$_2$CoO$_3$[CoO$_2$]$_{1.62}$, is a promising p-type thermoelectric oxide. Employing density functional theory, we study its electronic structure and determine, on the basis of Boltzmann theory within the constant-relaxation-time approximation, the thermoelectric transport coefficients. The dependence on strain and temperature is dete… ▽ More The layered misfit cobaltate Ca$_3$Co$_4$O$_9$, also known as Ca$_2$CoO$_3$[CoO$_2$]$_{1.62}$, is a promising p-type thermoelectric oxide. Employing density functional theory, we study its electronic structure and determine, on the basis of Boltzmann theory within the constant-relaxation-time approximation, the thermoelectric transport coefficients. The dependence on strain and temperature is determined. In particular, we find that the $xx$-component of the thermopower is strongly enhanced, while the $yy$-component is strongly reduced, when applying 2% tensile strain. A similar anisotropy is also found in the power factor. The temperature dependence of the conductivity in the $a$-$b$ plane is found to be rather weak above 200 K, which clearly indicates that the experimentally observed transport properties are dominated by inhomogeneities arising during sample growth, i.e., are not intrinsic. △ Less

Submitted 30 March, 2017; originally announced March 2017.

Comments: 12 pages (preprint style), 5 figures

Journal ref: Appl. Phys. Lett. 110, 233505 (2017)

Proximity induced spin-valley polarization in silicene/germanene on F-doped WS$_2$

Authors: Shahid Sattar, Nirpendra Singh, Udo Schwingenschlögl

Abstract: Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS$_2$) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for… ▽ More Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS$_2$) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene/germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS$_2$ opens a substantial band gap in silicene/germanene. F do** of WS$_2$ results in spin polarization, which, in conjunction with proximity-enhanced spin orbit coupling, creates sizable spin-valley polarization. △ Less

Submitted 13 January, 2017; originally announced January 2017.

Journal ref: PhysRevB.94, 205415 (2016)

Unravelling the interplay of geometrical, magnetic and electronic properties of metal-doped graphene nanomeshes

Authors: Mohamed M. Fadlallah, Ahmed A. Maarouf, Udo Schwingenschlögl, Ulrich Eckern

Abstract: Graphene nanomeshes (GNMs), formed by creating a superlattice of pores in graphene, possess rich physical and chemical properties. Many of these properties are determined by the pore geometry. In this work, we use first principles calculations to study the magnetic and electronic properties of metal-doped nitrogen-passivated GNMs. We find that the magnetic behaviour is dependent on the pore shape… ▽ More Graphene nanomeshes (GNMs), formed by creating a superlattice of pores in graphene, possess rich physical and chemical properties. Many of these properties are determined by the pore geometry. In this work, we use first principles calculations to study the magnetic and electronic properties of metal-doped nitrogen-passivated GNMs. We find that the magnetic behaviour is dependent on the pore shape (trigonal vs. hexagonal) as dictated by the number of covalent bonds formed between the 3$d$ metal and the passivating N atoms. We also find that Cr and V doped trigonal-pore GNMs, and Ti doped GNMs are the most favourable for spintronic applications. The calculated magnetic properties of Fe-doped GNMs compare well with recent experimental observations. The studied systems are useful as spin filters and chemical sensors. △ Less

Submitted 24 November, 2016; v1 submitted 9 November, 2016; originally announced November 2016.

Comments: 14 pages (preprint style), 4 figures

Journal ref: J. Phys.: Condens. Matter 29, 055301 (2017)

Defect engineering of the electronic transport through cuprous oxide interlayers

Authors: Mohamed M. Fadlallah, Ulrich Eckern, Udo Schwingenschlögl

Abstract: The electronic transport through Au-(Cu$_{2}$O)$_n$-Au junctions is investigated using first-principles calculations and the nonequilibrium Green's function method. The effect of varying the thickness (i.e., $n$) is studied as well as that of point defects and anion substitution. For all Cu$_{2}$O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, wi… ▽ More The electronic transport through Au-(Cu$_{2}$O)$_n$-Au junctions is investigated using first-principles calculations and the nonequilibrium Green's function method. The effect of varying the thickness (i.e., $n$) is studied as well as that of point defects and anion substitution. For all Cu$_{2}$O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the exception of O vacancies and Cl substitutional defects. A similar transmission behavior results from Cu deficiency and N substitution, as well as from Cl substitution and N interstitials for thick Cu$_{2}$O junctions. In agreement with recent experimental observations, it is found that N and Cl do** enhances the conductance. A Frenkel defect, i.e., a superposition of an O interstitial and O substitutional defect, leads to a remarkably high conductance. From the analysis of the defect formation energies, Cu vacancies are found to be particularly stable, in agreement with earlier experimental and theoretical work. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Comments: 21 pages (preprint style), 8 figures

Journal ref: Sci. Rep. 6, 27049 (2016)

Current developments in silicene and germanene

Authors: T. P. Kaloni, G. Schreckenbach, M. S. Freund, U. Schwingenschlögl

Abstract: Exploration of the unusual properties of the two-dimensional materials silicene and germanene is a very active research field in recent years. This article therefore reviews the latest developments, focusing both on the fundamental materials properties and on possible applications. Exploration of the unusual properties of the two-dimensional materials silicene and germanene is a very active research field in recent years. This article therefore reviews the latest developments, focusing both on the fundamental materials properties and on possible applications. △ Less

Submitted 19 December, 2015; originally announced December 2015.

Comments: 9 pages, 9 figures, and 2 tables

Defect induced d0 ferromagnetism in a ZnO grain boundary

Authors: S. Assa Aravindh, Udo Schwingenschloegl, Iman S. Roqan

Abstract: Several experimental studies have referred to the grain boundary (GB) defect as the origin of the ferromagnetism in ZnO. However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the GGA+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms hav… ▽ More Several experimental studies have referred to the grain boundary (GB) defect as the origin of the ferromagnetism in ZnO. However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the GGA+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. Unlike O vacancy (VO), Zn vacancy (VZn) is preferentially aggregated at the GB, relative to the bulk-like region, indicating the possibility of obtaining p-type conductivity in polycrystalline ZnO. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB. Ferromagnetic exchange energy > 150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0 semiconductors. △ Less

Submitted 1 August, 2015; originally announced August 2015.

Tunable thermoelectricity in monolayers of MoS$_{2}$ and other group-VI dichalcogenides

Authors: M. Tahir, U. Schwingenschlogl

Abstract: We study the thermoelectric properties of monolayers of MoS$_{2}$ and other group-VI dichalcogenides under circularly polarized off-resonant light. Analytical expressions are derived for the Berry phase mediated magnetic moment, orbital magnetization, as well as thermal and Nernst conductivities. Tuning of the band gap by {\it off-resonant} light enhances the spin splitting in both the valence and… ▽ More We study the thermoelectric properties of monolayers of MoS$_{2}$ and other group-VI dichalcogenides under circularly polarized off-resonant light. Analytical expressions are derived for the Berry phase mediated magnetic moment, orbital magnetization, as well as thermal and Nernst conductivities. Tuning of the band gap by {\it off-resonant} light enhances the spin splitting in both the valence and conduction bands and, thus, leads to a dramatic improvement of the spin and valley thermoelectric properties. △ Less

Submitted 18 April, 2015; originally announced April 2015.

Comments: 10 pages and 6 figs

Journal ref: New J. Phys. 16 115003 (2014)

Photoinduced quantum spin and valley Hall effects and orbital magnetization in monolayer MoS2

Authors: M. Tahir, A. Manchon, U. Schwingenschlogl

Abstract: We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we pred… ▽ More We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin-polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides. △ Less

Submitted 18 April, 2015; originally announced April 2015.

Comments: 10 pages and 2 figs

Journal ref: Phys. Rev. B 90, 125438 (2014)

Electronic transport properties of (fluorinated) metal phthalocyanine

Authors: M. M. Fadlallah, U. Eckern, A. H. Romero, U. Schwingenschlögl

Abstract: The magnetic and transport properties of the metal phthalocyanine (MPc) and F$_{16}$MPc (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn and Ag) families of molecules in contact with S-Au wires are investigated by density functional theory within the local density approximation, including local electronic correlations on the central metal atom. The magnetic moments are found to be considerably modified… ▽ More The magnetic and transport properties of the metal phthalocyanine (MPc) and F$_{16}$MPc (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn and Ag) families of molecules in contact with S-Au wires are investigated by density functional theory within the local density approximation, including local electronic correlations on the central metal atom. The magnetic moments are found to be considerably modified under fluorination. In addition, they do not depend exclusively on the configuration of the outer electronic shell of the central metal atom (as in isolated MPc and F$_{16}$MPc) but also on the interaction with the leads. Good agreement between the calculated conductance and experimental results is obtained. For M = Ag, a high spin filter efficiency and conductance is observed, giving rise to a potentially high sensitivity for chemical sensor applications. △ Less

Submitted 27 November, 2015; v1 submitted 9 February, 2015; originally announced February 2015.

Comments: 8 pages (two-column), 8 figures

Journal ref: New J. Phys. 18, 013003 (2016)

Quantum spin Hall states in graphene interacting with WS$_2$ or WSe$_2$

Authors: T. P. Kaloni, L. Kou, T. Frauenheim, U. Schwingenschlögl

Abstract: In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence o… ▽ More In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence of a magnetic field. △ Less

Submitted 1 December, 2014; originally announced December 2014.

Journal ref: Appl. Phys. Lett. 105, 233112 (2014)

Stretching of BDT-gold molecular junctions: thiol or thiolate termination?

Authors: Amaury de Melo Souza, Ivan Rungger, Renato Borges Pontes, Alexandre Reily Rocha, Antonio Jose Roque da Silva, Udo Schwingenschloegl, Stefano Sanvito

Abstract: It is often assumed that the hydrogen atoms in the thiol groups of a benzene-1,4-dithiol dissociate when Au-benzene-1,4-dithiol-Au junctions are formed. We demonstrate, by stability and transport properties calculations, that this assumption can not be made. We show that the dissociative adsorption of methanethiol and benzene-1,4-dithiol molecules on a flat Au(111) surface is energetically unfavor… ▽ More It is often assumed that the hydrogen atoms in the thiol groups of a benzene-1,4-dithiol dissociate when Au-benzene-1,4-dithiol-Au junctions are formed. We demonstrate, by stability and transport properties calculations, that this assumption can not be made. We show that the dissociative adsorption of methanethiol and benzene-1,4-dithiol molecules on a flat Au(111) surface is energetically unfavorable and that the activation barrier for this reaction is as high as 1 eV. For the molecule in the junction, our results show, for all electrode geometries studied, that the thiol junctions are energetically more stable than their thiolate counterparts. Due to the fact that density functional theory (DFT) within the local density approximation (LDA) underestimates the energy difference between the lowest unoccupied molecular orbital and the highest occupied molecular orbital by several electron-volts, and that it does not capture the renormalization of the energy levels due to the image charge effect, the conductance of the Au-benzene-1,4-dithiol-Au junctions is overestimated. After taking into account corrections due to image charge effects by means of constrained-DFT calculations and electrostatic classical models, we apply a scissor operator to correct the DFT energy levels positions, and calculate the transport properties of the thiol and thiolate molecular junctions as a function of the electrodes separation. △ Less

Submitted 3 October, 2014; originally announced October 2014.

Comments: 14 pages, 13 figures, to appear in Nanoscale

Solid argon as a possible substrate for quasi-freestanding silicene

Authors: S. Sattar, R. Hoffmann, U. Schwingenschlögl

Abstract: We study the structural and electronic properties of silicene on solid Ar(111) substrate using ab-initio calculations. We demonstrate that due to weak interaction quasi-freestanding silicene is realized in this system. The small binding energy of only $-32$ meV per Si atom also indicates the possibility to separate silicene from the solid Ar(111) substrate. In addition, a band gap of $11$ meV and… ▽ More We study the structural and electronic properties of silicene on solid Ar(111) substrate using ab-initio calculations. We demonstrate that due to weak interaction quasi-freestanding silicene is realized in this system. The small binding energy of only $-32$ meV per Si atom also indicates the possibility to separate silicene from the solid Ar(111) substrate. In addition, a band gap of $11$ meV and a significant splitting of the energy levels due to spin-orbit coupling are observed. △ Less

Submitted 24 June, 2014; originally announced June 2014.

Journal ref: New J. Phys. 16, 065001 (2014)

Effect of Gd do** and O deficiency on the Curie temperature of EuO

Authors: Nuttachai Jutong, Thomas Mairoser, Ulrich Eckern, Udo Schwingenschlögl

Abstract: The effect of Gd do** and O deficiency on the electronic structure, exchange interaction, and Curie temperature of EuO in the cubic and tetragonal phases is studied by means of density functional theory. For both defects, the Curie temperature is found to exhibit a distinct maximum as a function of the defect concentration. The existence of optimal defect concentrations is explained by the inter… ▽ More The effect of Gd do** and O deficiency on the electronic structure, exchange interaction, and Curie temperature of EuO in the cubic and tetragonal phases is studied by means of density functional theory. For both defects, the Curie temperature is found to exhibit a distinct maximum as a function of the defect concentration. The existence of optimal defect concentrations is explained by the interplay of the on-site, RKKY, and superexchange contributions to the magnetism. △ Less

Submitted 6 May, 2014; originally announced May 2014.

Comments: 5 figures, 14 pages (preprint style)

Journal ref: Sci. Rep. 5, 8038 (2015)

The fate of half-metallicity near interfaces: the case of NiMnSb/MgO and NiMnSi/MgO

Authors: Rui-**g Zhang, Ulrich Eckern, Udo Schwingenschlögl

Abstract: The electronic and magnetic properties of the interfaces between the half-metallic Heusler alloys NiMnSb, NiMnSi and MgO have been investigated using first-principles density-functional calculations with projector augmented wave potentials generated in the generalized gradient approximation. In the case of the NiMnSb/MgO (100) interface the half-metallicity is lost, whereas the MnSb/MgO contact in… ▽ More The electronic and magnetic properties of the interfaces between the half-metallic Heusler alloys NiMnSb, NiMnSi and MgO have been investigated using first-principles density-functional calculations with projector augmented wave potentials generated in the generalized gradient approximation. In the case of the NiMnSb/MgO (100) interface the half-metallicity is lost, whereas the MnSb/MgO contact in the NiMnSb/MgO (100) interface maintains a substantial degree of spin polarization at the Fermi level ($\sim 60$%). Remarkably, the NiMnSi/MgO (111) interface shows 100% spin polarization at the Fermi level, despite considerable distortions at the interface, as well as rather short Si/O bonds after full structural optimization. This behavior markedly distinguishes NiMnSi/MgO (111) from the corresponding NiMnSb/CdS and NiMnSb/InP interfaces. △ Less

Submitted 28 February, 2014; originally announced March 2014.

Comments: 14 pages (preprint style), 4 figures, 6 tables

Journal ref: ACS Appl. Mater. Interfaces 6, 14516 (2014)

Band gap tunning in BN-doped graphene systems with high carrier mobility

Authors: T. P. Kaloni, R. P. Joshi, N. P. Adhikari, U. Schwingenschlögl

Abstract: Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five do** concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies… ▽ More Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five do** concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies between 0.007 and 0.209 free electron masses, resembling a high mobility of the charge carriers. △ Less

Submitted 23 February, 2014; v1 submitted 1 February, 2014; originally announced February 2014.

Comments: 3 figures and 1 Table

Journal ref: Appl. Phys. Lett. 104, 073116 (2014)

Prediction of a quantum anomalous Hall state in Co decorated silicene

Authors: T. P. Kaloni, N. Singh, U. Schwingenschlögl

Abstract: Based on first-principles calculations, we demonstrate that Co decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin orbit coupling of the silicene opens a nontrivial band gap at the K-point. As compared to other transition metals, Co decorated silicene is unique in this respect, since usually hybridization and spin-pol… ▽ More Based on first-principles calculations, we demonstrate that Co decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin orbit coupling of the silicene opens a nontrivial band gap at the K-point. As compared to other transition metals, Co decorated silicene is unique in this respect, since usually hybridization and spin-polarization induced in the silicene suppress a quantum anomalous Hall state. △ Less

Submitted 9 January, 2014; v1 submitted 26 December, 2013; originally announced December 2013.

Journal ref: Phys. Rev. B 89, 035409 (2014)

Substrate enhanced superconductivity in Li-decorated graphene

Authors: T. P. Kaloni, A. V. Balatsky, U. Schwingenschlögl

Abstract: We investigate the role of the substrate for the strength of the electon phonon coupling in Li-decorated graphene. We find that the interaction with a $h$-BN substrate leads to a significant enhancement from $λ_0=0.62$ to $λ_1=0.67$, which corresponds to a $25\%$ increase of the transition temperature from $T_{c0}=10.33$ K to $T_{c1}=12.98$ K. The superconducting gaps amount to 1.56 meV (suspended… ▽ More We investigate the role of the substrate for the strength of the electon phonon coupling in Li-decorated graphene. We find that the interaction with a $h$-BN substrate leads to a significant enhancement from $λ_0=0.62$ to $λ_1=0.67$, which corresponds to a $25\%$ increase of the transition temperature from $T_{c0}=10.33$ K to $T_{c1}=12.98$ K. The superconducting gaps amount to 1.56 meV (suspended) and 1.98 meV (supported). These findings open up a new route to enhanced superconducting transition temperatures in graphene-based materials by substrate engineering. △ Less

Submitted 16 December, 2013; v1 submitted 7 December, 2013; originally announced December 2013.

Comments: 11 pages, 3 figures, and 1 table

Journal ref: EPL 104, 47013 (2013)

Influence of substitution on the optical properties of functionalized pentacene monomers and crystals: Experiment and theory

Authors: Y. Saeed, K. Zhao, N. Singh, R. Li, J. E. Anthony, A. Amassian, U. Schwingenschlögl

Abstract: The influence of solubilizing substitutional groups on the electronic and optical properties of functionalized pentacene molecules and crystals have been investigated. Density functional theory is used to calculate the electronic and optical properties of pentacene, TIBS-CF$_{3}$-pentacene, and TIPS-pentacene. The results are compared with experimental absorption spectra of solutions and the compl… ▽ More The influence of solubilizing substitutional groups on the electronic and optical properties of functionalized pentacene molecules and crystals have been investigated. Density functional theory is used to calculate the electronic and optical properties of pentacene, TIBS-CF$_{3}$-pentacene, and TIPS-pentacene. The results are compared with experimental absorption spectra of solutions and the complex dielectric function of thin films in the 1 eV to 3 eV energy range. In all cases, the band gaps of the isolated molecules are found to be smaller than those of the crystals. The absorption spectra and dielectric function are interpreted in terms of the transitions between the highest occupied molecular orbitals and lowest unoccupied molecular orbitals. The bands associated to C and Si atoms connecting the functional side group to the pentacene in the (6,13) positions are found to be the main contributors to the optical transitions. The calculated dielectric functions of thin films agree with the experimental results. A redshift is observed in crystals as compared to molecules in experiment and theory both, where the amplitude depends on the packing structure. △ Less

Submitted 14 November, 2013; originally announced November 2013.

Journal ref: Chemical Physics Letters 585 (2013) 95

Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions

Authors: Y. Saeed, N. Singh, N. Useinov, U. Schwingenschlögl

Abstract: The objective of this work is to describe the tunnel electron current in single barrier magnetic tunnel junctions within a new approach that goes beyond the single-band transport model. We propose a ballistic multi-channel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an… ▽ More The objective of this work is to describe the tunnel electron current in single barrier magnetic tunnel junctions within a new approach that goes beyond the single-band transport model. We propose a ballistic multi-channel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single crystal magnetic Fe(110) electrodes for Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ tunnel junctions, where the electronic band structures of Fe and La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ are derived by \it{ab-initio} calculations. △ Less

Submitted 14 November, 2013; originally announced November 2013.

Journal ref: Phys. Rev . B, 88, 060405(R), (2013)

Half-metallicity and giant magneto-optical Kerr effect in N-doped NaTaO$_3$

Authors: Y. Saeed, N. Singh, U. Schwingenschlögl

Abstract: We employ density functional theory using the modified Becke-Johnson (mBJ) approach to investigate the electronic and magneto-optical properties of N-doped NaTaO$_3$. The mBJ results reveal a half metallic nature of NaTaO$_2$N, in contrast to results obtained by the generalized gradient approximation. We find a giant polar Kerr rotation of 2.16$^{\circ}$ at 725 nm wave length (visible region), whi… ▽ More We employ density functional theory using the modified Becke-Johnson (mBJ) approach to investigate the electronic and magneto-optical properties of N-doped NaTaO$_3$. The mBJ results reveal a half metallic nature of NaTaO$_2$N, in contrast to results obtained by the generalized gradient approximation. We find a giant polar Kerr rotation of 2.16$^{\circ}$ at 725 nm wave length (visible region), which is high as compared to other half metallic perovskites as well as to the prototypical half metal PtMnSb. △ Less

Submitted 14 November, 2013; originally announced November 2013.

Journal ref: Chemical Physics Letters 546 (2012) 96

Colossal Thermoelectric Power Factor in K$_{7/8}$RhO$_2$

Authors: Y. Saeed, N. Singh, U. Schwingenschlögl

Abstract: We discuss the thermoelectric and optical properties of layered K$_{x}$RhO$_{2}$ (\emph{x} = 1/2 and 7/8) in terms of the electronic structure determined by first principles calculations as well as Boltzmann transport theory. Our optimized lattice constants differ significantly from the experiment, but result in optical and transport properties close to the experiment. The main contribution to the… ▽ More We discuss the thermoelectric and optical properties of layered K$_{x}$RhO$_{2}$ (\emph{x} = 1/2 and 7/8) in terms of the electronic structure determined by first principles calculations as well as Boltzmann transport theory. Our optimized lattice constants differ significantly from the experiment, but result in optical and transport properties close to the experiment. The main contribution to the optical spectra are due to intra and inter-band transitions between the Rh 4\emph{d} and O 2\emph{p} states. We find a similar power factor for pristine K$_{x}$RhO$_{2}$ at low and high cation concentartions. Our transport results of hydrated K$_{x}$RhO$_{2}$ at room temperature show highest value of the power factor among the hole-type materials. Specially at 100 K, we obtain a value of 3$\times$10$^{-3}$ K$^{-1}$ for K$_{7/8}$RhO$_{2}$, which is larger than that of Na$_{0.88}$CoO$_{2}$ {[}M. Lee \emph{et al}., Nat. Mater. 5, 537 (2006){]}. In general, the electronic and optical properties of K$_{x}$RhO$_{2}$ are similar to Na$_{x}$CoO$_{2}$ with enhanced transport properties in the hydrated phase. △ Less

Submitted 14 November, 2013; originally announced November 2013.

Journal ref: Adv. Funct. Mater. 22, 2792 (2012)

Modelling magnetism of C at O and B monovacancies in graphene

Authors: T. P. Kaloni, M. Upadhyay Kahaly, R. Faccio, U. Schwingenschlögl

Abstract: The presence of defects can introduce important changes in the electronic structure of graphene, leading to phenomena such as C magnetism. In addition, vacancies are reactive and permit the incorporation of dopants. This paper discusses the electronic properties of defective graphene for O and B decoration. Phonon calculations allow us to address directly the stability of the systems under study.… ▽ More The presence of defects can introduce important changes in the electronic structure of graphene, leading to phenomena such as C magnetism. In addition, vacancies are reactive and permit the incorporation of dopants. This paper discusses the electronic properties of defective graphene for O and B decoration. Phonon calculations allow us to address directly the stability of the systems under study. We show that it is possible to obtain magnetic solutions with and without dangling bonds, demonstrating that C magnetism can be achieved in the presence of B and O. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Comments: 11 pages, 4 figures, and 1 Table

Journal ref: Carbon 64, 281 (2013)

Stability of germanene under tensile strain

Authors: T. P. Kaloni, U. Schwingenschlögl

Abstract: The stability of germanene under biaxial tensile strain and the accompanying modifications of the electronic properties are studied by density functional theory. The phonon spectrum shows that up to $16\%$ strain the germanene lattice is stable, where the Dirac cone shifts towards higher energy and hole-doped Dirac states are achieved. The latter is due to weakening of the Ge-Ge bonds and reductio… ▽ More The stability of germanene under biaxial tensile strain and the accompanying modifications of the electronic properties are studied by density functional theory. The phonon spectrum shows that up to $16\%$ strain the germanene lattice is stable, where the Dirac cone shifts towards higher energy and hole-doped Dirac states are achieved. The latter is due to weakening of the Ge-Ge bonds and reduction of the s-p hybridization. Our calculated Grüneisen parameter shows a similar dependence on the strain as reported for silicene (which is different from that of graphene). △ Less

Submitted 12 November, 2013; originally announced November 2013.

Comments: 11 pages, 3 figures, and 1 Table

Journal ref: Chem. Phys. Lett. 583, 137 (2013)

A first principles investigated optical spectra of oxizided graphene

Authors: N. Singh, T. P. Kaloni, Udo Schwingenschlögl

Abstract: The electronic and optical properties of mono, di, tri, and tetravacancies in graphene are studied in comparison to each other, using density functional theory. In addition, oxidized monovacancies are considered for different oxygen concentrations. Pristine graphene is found to be more absorptive than any defect configuration at low energy. We demonstrate characteristic differences in the optical… ▽ More The electronic and optical properties of mono, di, tri, and tetravacancies in graphene are studied in comparison to each other, using density functional theory. In addition, oxidized monovacancies are considered for different oxygen concentrations. Pristine graphene is found to be more absorptive than any defect configuration at low energy. We demonstrate characteristic differences in the optical spectra of the various defects for energies up to 3 eV. This makes it possible to quantify by optical spectroscopy the ratios of the defect species present in a sample. △ Less

Submitted 9 November, 2013; originally announced November 2013.

Journal ref: Appl. Phys. Lett. 102, 023101 (2013)

Electronic properties of Mn decorated silicene on hexagonal boron nitride

Authors: T. P. Kaloni, S. Gangopadhyay, N. Singh, B. Jones, U. Schwingenschlögl

Abstract: We study silicene on hexagonal boron nitride, using first principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ… ▽ More We study silicene on hexagonal boron nitride, using first principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail. △ Less

Submitted 18 December, 2013; v1 submitted 5 November, 2013; originally announced November 2013.

Comments: 9 pages, 3 pages

Journal ref: Phys. Rev. B 88, 235418 (2013)

Quasi free-standing silicene in a superlattice with hexagonal boron nitride

Authors: T. P. Kaloni, M. Tahir, U. Schwingenschlögl

Abstract: We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved, which has not been possible in any other system so far. Due to the wide ban… ▽ More We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved, which has not been possible in any other system so far. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a metal to a topological insulator and further to a band insulator. △ Less

Submitted 29 October, 2013; originally announced October 2013.

Comments: 9 pages and 3 figures

Journal ref: Sci. Rep. 3, 3192 (2013)

Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

Authors: T. P. Kaloni, U. Schwingenschlögl

Abstract: The epitaxial growth of germanene on semiconducting GaAs(0001) substrate is studied using $ab$-$initio$ calculations. The interaction of the germanene is found to be minimum with the substrate. Our obtained results strongly indicate that it is possible to take off germanene from the substrate to make it free standing. We demonstrate a methods to achieve this aim. We also address the electronic str… ▽ More The epitaxial growth of germanene on semiconducting GaAs(0001) substrate is studied using $ab$-$initio$ calculations. The interaction of the germanene is found to be minimum with the substrate. Our obtained results strongly indicate that it is possible to take off germanene from the substrate to make it free standing. We demonstrate a methods to achieve this aim. We also address the electronic structure of germanene on GaAs(0001) substrate and found to be the Dirac cone shift above the Fermi level with the spltting of 160 meV. Forthermore, we calculate the band structure of the free standing germanene with and without substrate and found band gap of 24 meV due to the intrinsic spin orbit coupling. △ Less

Submitted 7 October, 2014; v1 submitted 29 October, 2013; originally announced October 2013.

Comments: 11 pages, 3 figures, and 1 table

Journal ref: J. Appl. Phys. 114, 184307 (2013)

Hole doped Dirac states in silicene by biaxial tensile strain

Authors: T. P. Kaloni, Y. C. Cheng, U. Schwingenschlögl

Abstract: The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole do** because of weakening of the Si$-$Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It… ▽ More The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole do** because of weakening of the Si$-$Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene. △ Less

Submitted 11 November, 2013; v1 submitted 28 October, 2013; originally announced October 2013.

Comments: 10 pages, 5 figures, and 1 table

Journal ref: J. Appl. Phys. 113, 104305 (2013)

Constrained-DFT method for accurate energy level alignment of metal/molecule interfaces

Authors: A. M. Souza, I. Rungger, C. D. Pemmaraju, U. Schwingenschloegl, S. Sanvito

Abstract: We present a computational scheme for extracting the energy level alignment of a metal/molecule interface, based on constrained density functional theory and local exchange and correlation functionals. The method, applied here to benzene on Li(100), allows us to evaluate charge transfer energies, as well as the spatial distribution of the image charge induced on the metal surface. We systematicall… ▽ More We present a computational scheme for extracting the energy level alignment of a metal/molecule interface, based on constrained density functional theory and local exchange and correlation functionals. The method, applied here to benzene on Li(100), allows us to evaluate charge transfer energies, as well as the spatial distribution of the image charge induced on the metal surface. We systematically study the energies for charge transfer from the molecule to the substrate as function of the molecule-substrate distance, and investigate the effects arising from image charge confinement and local charge neutrality violation. For benzene on Li(100) we find that the image charge plane is located at about 1.8 Åabove the Li surface, and that our calculated charge transfer energies compare perfectly with those obtained with a classical electrostatic model having the image plane located at the same position. The methodology outlined here can be applied to study any metal/organic interface in the weak coupling limit at the computational cost of a total energy calculation. Most importantly, as the scheme is based on total energies and not on correcting the Kohn-Sham quasiparticle spectrum, accurate results can be obtained with local/semi-local exchange and correlation functionals. This enables a systematic approach to convergence. △ Less

Submitted 26 September, 2013; originally announced September 2013.

Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

Authors: F. Cossu, U. Schwingenschlögl, V. Eyert

Abstract: We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a pa… ▽ More We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts ("scissors operator") cannot lead to valid results. △ Less

Submitted 16 July, 2013; originally announced July 2013.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 88, 045119 (2013)

Quantum capacitance of an ultrathin topological insulator film in a magnetic field

Authors: M. Tahir, K. sabeeh, U. Schwingenschlogl

Abstract: We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and… ▽ More We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and hybridization energies are varied relative to each other. This leads to a change in the character of the magnetocapacitance at the charge neutrality point. We further show that in the presence of both Zeeman interaction and hybridization the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high perpendicular magnetic field. In addition, we address the crossover from perpendicular to parallel magnetic field and find consistency with recent experimental data. △ Less

Submitted 6 February, 2013; originally announced February 2013.

Comments: 5 pages and 4 figures

Journal ref: Sci. Rep. 3, 1261 (2013)

Modified Li chains as atomic switches

Authors: Thomas Wunderlich, Berna Akgenc, Ulrich Eckern, Cosima Schuster, Udo Schwingenschlögl

Abstract: We present electronic structure and transport calculations for hydrogen and lithium chains, using density functional theory and scattering theory on the Green's function level, to systematically study impurity effects on the transmission coefficient. To this end we address various impurity configurations. Tight-binding results allow us to interpret our the findings. We analyze under which circumst… ▽ More We present electronic structure and transport calculations for hydrogen and lithium chains, using density functional theory and scattering theory on the Green's function level, to systematically study impurity effects on the transmission coefficient. To this end we address various impurity configurations. Tight-binding results allow us to interpret our the findings. We analyze under which circumstances impurities lead to level splitting and/or can be used to switch between metallic and insulating states. We also address the effects of strongly electronegative impurities. △ Less

Submitted 27 December, 2012; originally announced December 2012.

Comments: 12 pages (preprint style), 7 figures

Journal ref: Sci. Rep. 3, 2605 (2013)