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Ultrafast electron localization and screening in a transition metal dichalcogenide
Authors:
Z. Schumacher,
S. A. Sato,
S. Neb,
A. Niedermayr,
L. Gallmann,
A. Rubio,
U. Keller
Abstract:
The coupling of light to electrical charge carriers in semiconductors is the foundation of many technological applications. Attosecond transient absorption spectroscopy measures simultaneously how excited electrons and the vacancies they leave behind dynamically react to the applied optical fields. In compound semiconductors, these dynamics can be probed via any of their atomic constituents. Often…
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The coupling of light to electrical charge carriers in semiconductors is the foundation of many technological applications. Attosecond transient absorption spectroscopy measures simultaneously how excited electrons and the vacancies they leave behind dynamically react to the applied optical fields. In compound semiconductors, these dynamics can be probed via any of their atomic constituents. Often, the atomic species forming the compound contribute comparably to the relevant electronic properties of the material. One therefore expects to observe similar dynamics, irrespective of the choice of atomic species via which it is probed. Here, we show in the two-dimensional transition metal dichalcogenide semiconductor $MoSe_2$, that through a selenium-based transition we observe charge carriers acting independently from each other, while when probed through molybdenum, the collective, many-body motion of the carriers dominates. Such unexpectedly contrasting behavior can be traced back to a strong localization of electrons around molybdenum atoms following absorption of light, which modifies the local fields acting on the carriers. We show that similar behavior in elemental titanium metal carries over to transition metal-containing compounds and is expected to play an essential role for a wide range of such materials. Knowledge of independent particle and collective response is essential for fully understanding these materials.
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Submitted 11 October, 2022;
originally announced October 2022.
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Single-dopant band bending fluctuations in MoSe$_2$ measured with electrostatic force microscopy
Authors:
Megan Cowie,
Rikke Plougmann,
Zeno Schumacher,
Peter Grütter
Abstract:
In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe$_2$ sample. We show that noise in this device is intrinsically bias-dependent due to the bias-dependent surface potential, and does not require that the frequency or magnitude of individual dopant fl…
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In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe$_2$ sample. We show that noise in this device is intrinsically bias-dependent due to the bias-dependent surface potential, and does not require that the frequency or magnitude of individual dopant fluctuations are themselves bias-dependent. Finally, we measure spatial nonhomogeneities in band bending (charge reorganization) timescales.
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Submitted 15 June, 2022; v1 submitted 30 September, 2021;
originally announced September 2021.
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How high is a MoSe$_2$ monolayer?
Authors:
Rikke Plougmann,
Megan Cowie,
Yacine Benkirane,
Léonard Schué,
Zeno Schumacher,
Peter Grütter
Abstract:
Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy (AFM) height measurements. Here, we use photoluminescen…
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Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy (AFM) height measurements. Here, we use photoluminescence spectroscopy and three different AFM methods to demonstrate significant discrepancies in height measurements of exfoliated MoSe$_2$ flakes on SiO$_2$ depending on the method used. We highlight that overlooking effects from electrostatic forces, contaminants and surface binding can be misleading when measuring the height of a MoSe$_2$ flake. These factors must be taken into account as a part of the protocol for counting TMDC layers.
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Submitted 11 September, 2021;
originally announced September 2021.
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Charge carrier inversion in a doped thin film organic semiconductor island
Authors:
Zeno Schumacher,
Rasa Rejali,
Megan Cowie,
Andreas Spielhofer,
Yoichi Miyahara,
Peter Grutter
Abstract:
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time…
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Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time. Here, we develop a pulsed bias technique to characterize the dopant type of any organic material system, without prior knowledge or characterization of the material in question. We use this technique on a pentacene/PTCDI heterostructure and thus deduce that pentacene is n-doped by impurities. Additionally, through tip-induced band-bending, we generate inversion, depletion, and accumulation regimes over a 20~nm radius, three monolayer thick n-doped pentacene island. Our findings demonstrate that nanometer-scale lateral extent and thickness are sufficient for an OFET device to operate in the inversion regime.
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Submitted 5 January, 2021; v1 submitted 4 August, 2020;
originally announced August 2020.
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The lower limit for time resolution in frequency modulation atomic force microscopy
Authors:
Zeno Schumacher,
Andreas Spielhofer,
Yoichi Miyahara,
Peter Grutter
Abstract:
Atomic force microscopy (AFM) routinely achieves structural information in the sub-nm length scale. Measuring time resolved properties on this length scale to understand kinetics at the nm scale remains an elusive goal. We present a general analysis of the lower limit for time resolution in AFM. Our finding suggests the time resolution in AFM is ultimately limited by the well-known thermal limit o…
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Atomic force microscopy (AFM) routinely achieves structural information in the sub-nm length scale. Measuring time resolved properties on this length scale to understand kinetics at the nm scale remains an elusive goal. We present a general analysis of the lower limit for time resolution in AFM. Our finding suggests the time resolution in AFM is ultimately limited by the well-known thermal limit of AFM and not as often proposed by the mechanical response time of the force sensing cantilever. We demonstrate a general pump-probe approach using the cantilever as a detector responding to the averaged signal. This method can be applied to any excitation signal such as electrical, thermal, magnetic or optical. Experimental implementation of this method allows us to measure a photocarrier decay time of ~1 ps in low temperature grown GaAs using a cantilever with a resonance frequency of 280 kHz.
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Submitted 8 September, 2016;
originally announced September 2016.
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Kelvin probe force microscopy by direct dissipative electrostatic force modulation
Authors:
Yoichi Miyahara,
Jessica Topple,
Zeno Schumacher,
Peter Grutter
Abstract:
We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning as it requires no low frequency modulation. The dissipation is caused by the oscillating electrostatic force that is coherent with the tip oscillation, which is…
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We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning as it requires no low frequency modulation. The dissipation is caused by the oscillating electrostatic force that is coherent with the tip oscillation, which is induced by a sinusoidally oscillating voltage applied between the tip and sample. We analyzed the effect of the phase of the oscillating force on the frequency shift and dissipation and found that the relative phase of 90$^\circ$ that causes only the dissipation is the most appropriate for KPFM measurements. The present technique requires a significantly smaller ac voltage amplitude by virtue of enhanced force detection due to the resonance enhancement and the use of fundamental flexural mode oscillation for electrostatic force detection. This feature will be of great importance in the electrical characterizations of technically relevant materials whose electrical properties are influenced by the externally applied electric field as is the case in semiconductor electronic devices.
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Submitted 24 August, 2015;
originally announced August 2015.
