Showing 1–15 of 15 results for author: Schultheiß, J

Magnetoelectric coupling at the domain level in polycrystalline ErMnO3

Authors: J. Schultheiß, L. Puntigam, M. Winkler, S. Krohns, D. Meier, H. Das, D. M. Evans, I. Kézsmárki

Abstract: We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, f… ▽ More We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, facilitated by intergranular coupling in polycrystalline multiferroics. Our findings give insights into the interplay between electric and magnetic properties at the local scale and represent a so far unexplored pathway for manipulating topologically protected ferroelectric vortex patterns in hexagonal manganites. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering

Authors: L. Zhou, L. Puntigam, P. Lunkenheimer, E. Bourret, Z. Yan, I. Kézsmárki, D. Meier, S. Krohns, J. Schultheiß, D. M. Evans

Abstract: A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the pote… ▽ More A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the potential of post-synthesis control of the dielectric constant. However, to date, direct imaging of how changes in domain wall pattern cause a change in dielectric constant within a single sample has not been realized. In this work, we demonstrate that changing the domain wall density allows the engineering of the dielectric constant in hexagonal-ErMnO3 single crystals. The changes of the domain wall density are quantified via microscopy techniques, while the dielectric constant is determined via macroscopic dielectric spectroscopy measurements. The observed changes in the dielectric constant are quantitatively consistent with the observed variation in domain wall density, implying that the insulating domain walls behave as 'ideal' capacitors connected in series. Our approach to engineer the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a novel degree of flexibility to in-situ tune the dielectric constant. △ Less

Submitted 19 January, 2024; originally announced January 2024.

Coexistence of multi-scale domains in ferroelectric polycrystals with non-uniform grain-size distributions

Authors: K. Wolk, R. S. Dragland, E. Chavez Panduro, L. Richarz, Z. Yan, E. Bourret, K. A. Hunnestad, Ch. Tzschaschel, J. Schultheiß, D. Meier

Abstract: Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here, we investigate domain formation in poly- and single crystalline improper ferroelectric DyMnO3. We show that a non-uniform grain-size distribution in… ▽ More Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here, we investigate domain formation in poly- and single crystalline improper ferroelectric DyMnO3. We show that a non-uniform grain-size distribution in the polycrystals facilitates the coexistence of multi-scale domains, varying by up to one order of magnitude in size. This unusual domain structure originates from an inverted domain-size/grain-size dependence that is intrinsic to the hexagonal manganite polycrystals, expanding previous studies towards non-uniform grain-size distributions. Our results demonstrate that the micrometer-sized grains in DyMnO3 represent individual ferroelectric units with a characteristic domain structure, giving a new dimension to domain engineering in ferroelectric polycrystals with non-uniform microstructures. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Pressure-control of non-ferroelastic ferroelectric domains in ErMnO3

Authors: O. W. Sandvik, A. M. Müller, H. W. Ånes, M. Zahn, J. He, M. Fiebig, Th. Lottermoser, T. Rojac, D. Meier, J. Schultheiß

Abstract: Mechanical pressure controls the structural, electric, and magnetic order in solid state systems, allowing to tailor and improve their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we stu… ▽ More Mechanical pressure controls the structural, electric, and magnetic order in solid state systems, allowing to tailor and improve their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we study the pressure-driven response in a non-ferroelastic ferroelectric, ErMnO3, where the classical stress-strain coupling is absent, and the domain formation is governed by creation-annihilation processes of topological defects. By annealing ErMnO3 polycrystals under variable pressures in the MPa-regime, we transform non-ferroelastic vortex-like domains into stripe-like domains. The width of the stripe-like domains is determined by the applied pressure as we confirm by three-dimensional phase field simulations, showing that pressure leads to highly oriented layer-like periodic domains. Our work demonstrates the possibility to utilize mechanical pressure for domain engineering in non-ferroelastic ferroelectrics, providing a processing-accessible lever to control their dielectric, electromechanical, and piezoelectric response. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Quantitative 3D map** of chemical defects at charged grain boundaries in a ferroelectric oxide

Authors: K. A. Hunnestad, J. Schultheiß, A. C. Mathisen, I. Ushakov, C. Hatzoglou, A. T. J. van Helvoort, D. Meier

Abstract: Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline fe… ▽ More Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline ferroelectric ErMnO3. Using orientation map** and different scanning probe microscopy techniques, we demonstrate that the polycrystalline material develops charged grain boundaries with enhanced electronic conductance. By performing atom probe tomography measurements, we find an enrichment of erbium and a depletion of oxygen at all grain boundaries. The observed compositional changes translate into a charge that exceeds possible polarization-driven effects, demonstrating that structural phenomena rather than electrostatics determine the local chemical composition and related changes in the electronic transport behavior. The study shows that the charged grain boundaries behave distinctly different from charged domain walls, giving additional opportunities for property engineering at polar oxide interfaces. △ Less

Submitted 23 March, 2023; v1 submitted 15 December, 2022; originally announced December 2022.

Ferroelectric Polycrystals: Structural and microstructural levers for property engineering via domain-wall dynamics

Authors: J. Schultheiß, G. Picht, J. Wang, Y. A. Genenko, L. Q. Chen, J. E. Daniels, J. Koruza

Abstract: Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and actuators. The key to tuning their dielectric, piezoelectric, and electromechanical performance is to control the domain structure and the dynamics of the domain wa… ▽ More Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and actuators. The key to tuning their dielectric, piezoelectric, and electromechanical performance is to control the domain structure and the dynamics of the domain walls. In fixed compositions, this is often realized by chemical do**. In addition, structural and microstructural parameters, such as grain size, degree of crystallographic texture or porosity play a key role. A major breakthrough in the field came with the fundamental understanding of the link between the local electric and mechanical driving forces and domain wall motion. Here, the impact of structure and microstructure on these driving forces is reviewed and an engineering toolbox is introduced. An overview of advances in the understanding of domain wall motion on the micro- and nanoscale is provided and discussed in terms of the macroscopic functional performance of polycrystalline ferroelectrics/ferroelastics. In addition, a link to theoretical and computational models is established. The review concludes with a discussion about beyond state-of-the-art characterization techniques, new approaches, and future directions toward non-conventionally ordered ferroelectrics for next-generation nanoelectronics and energy-storage applications. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Confinement-driven inverse domain scaling in polycrystalline ErMnO3

Authors: Jan Schultheiß, Fei Xue, Erik Roede, Håkon W. Ånes, Frida H. Danmo, Sverre M. Selbach, Long-Qing Chen, Dennis Meier

Abstract: The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically p… ▽ More The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically protected vortices on the domain formation in improper ferroelectric ErMnO3 polycrystals, demonstrating inverted domain scaling behavior compared to classical ferroelectrics. We observe that as the grain size increases, smaller domains are formed, which we relate to the interaction of the topological vortices with local strain fields. The inversion of the domain scaling behavior has far-reaching implications, providing fundamentally new opportunities for topology-based domain engineering and the tuning of the electromechanical and dielectric performance of ferroelectrics in general. △ Less

Submitted 17 April, 2022; originally announced April 2022.

Unveiling AC electronic properties at ferroelectric domain walls

Authors: Jan Schultheiß, Tadej Rojac, Dennis Meier

Abstract: Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was the development of a fundamental framework that explains the emergence of enhanced electronic direct-current (DC) conduction at the domain walls. In this Revie… ▽ More Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was the development of a fundamental framework that explains the emergence of enhanced electronic direct-current (DC) conduction at the domain walls. In this Review, we discuss the much less explored behavior of ferroelectric domain walls under applied alternating-current (AC) voltages. We provide an overview of the recent advances in the nanoscale characterization that allow for resolving the dynamic responses of individual domain walls to AC fields. In addition, different examples are presented, showing the unusual AC electronic properties that arise at neutral and charged domain walls in the kilo- to gigahertz regime. We conclude with a discussion about the future direction of the field and novel application opportunities, expanding domain-wall based nanoelectronics into the realm of AC technologies. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Charged ferroelectric domain walls for deterministic a.c. signal control

Authors: J. Schultheiß, E. Lysne, L. Puntigam, J. Schaab, E. Bourret, Z. Yan, S. Krohns, D. Meier

Abstract: The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c… ▽ More The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c. behaviors at charged walls, their response to alternating currents (a.c.) remains to be resolved. Here, we reveal a.c. characteristics at positively and negatively charged walls in ErMnO3, distinctly different from the response of the surrounding domains. By combining voltage-dependent spectroscopic measurements on macroscopic and local scales, we demonstrate a pronounced non-linear response at the electrode-wall junction, which correlates with the domain-wall charge state. The dependence on the a.c. drive voltage enables reversible switching between uni- and bipolar output signals, providing conceptually new opportunities for the application of charged walls as functional nanoelements in a.c. circuitry. △ Less

Submitted 3 May, 2021; originally announced May 2021.

Insulating improper ferroelectric domain walls as robust barrier layer capacitors

Authors: Lukas Puntigam, Jan Schultheiß, Ana Strinic, Zewu Yan, Edith Bourret, Markus Altthaler, Istvan Kezsmarki, Donald M. Evans, Dennis Meier, Stephan Krohns

Abstract: We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second o… ▽ More We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8 %) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO$_3$, by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelecctrics with potential applications in electroceramic capacitors. △ Less

Submitted 20 November, 2020; originally announced November 2020.

Comments: 7 pages, 4 figures

Multi-step stochastic mechanism of polarization reversal in rhombohedral ferroelectrics

Authors: Yuri A. Genenko, Ruben Khachaturyan, Ivan S. Vorotiahin, Jan Schultheiß, John E. Daniels, Anna Grünebohm, Jurij Koruza

Abstract: A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of indiv… ▽ More A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of individual switching processes, and their activation fields. Complementary, the phenomenological Landau-Ginzburg-Devenshire theory is used to analyze the impact of external field and stress on switching barriers showing that residual mechanical stress may promote the fast switching. △ Less

Submitted 3 August, 2020; v1 submitted 10 April, 2020; originally announced April 2020.

Comments: 33 pages, 9 figures

Journal ref: Phys. Rev. B 102, 064107 (2020)

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Authors: J. Schultheiß, J. Schaab, D. R. Småbråten, S. H. Skjærvø, E. Bourret, Z. Yan, S. M. Selbach, D. Meier

Abstract: Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are… ▽ More Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are explained based on established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting domain wall behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes new possibilities for tuning their electronic response based on oxidation conditions, opening the door for domain-wall based sensor technology. △ Less

Submitted 30 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: 5 pages, 3 figures

Domain wall-grain boundary interactions in polycrystalline Pb(Zr0.7Ti0.3)O3 piezoceramics

Authors: J. Schultheiß, S. Checchia, H. Uršič, T. Frömling, J. E. Daniels, B. Malič, T. Rojac, J. Koruza

Abstract: Interactions between grain boundaries and domain walls were extensively studied in ferroelectric films and bicrystals. This knowledge, however, has not been transferred to polycrystalline ceramics, in which the grain size represents a powerful tool to tailor the dielectric and electromechanical response. Here, we relate changes in dielectric and electromechanical properties of a bulk polycrystalli… ▽ More Interactions between grain boundaries and domain walls were extensively studied in ferroelectric films and bicrystals. This knowledge, however, has not been transferred to polycrystalline ceramics, in which the grain size represents a powerful tool to tailor the dielectric and electromechanical response. Here, we relate changes in dielectric and electromechanical properties of a bulk polycrystalline Pb(Zr0.7Ti0.3)O3 to domain wall interactions with grain boundaries. Samples with grain sizes in the range of 3.9 - 10.4 micrometers were prepared and their microstructure, crystal structure, and dielectric/electromechanical properties were investigated. A decreasing grain size was accompanied by a reduction in large-signal electromechanical properties and an increase in small-signal dielectric permittivity. High-energy diffraction analysis revealed increasing microstrains upon decreasing the grain size, while piezoresponse force microscopy indicated an increased local coercive voltage near grain boundaries. The changes in properties were thus related to strained material volume close to the grain boundaries exhibiting reduced domain wall dynamics. △ Less

Submitted 24 February, 2020; originally announced February 2020.

Comments: 27 pages, 7 figures

Stochastic model of dispersive multi-step polarization switching in ferroelectrics due to spatial electric field distribution

Authors: Ruben Khachaturyan, Jan Schultheiss, Jurij Koruza, Yuri A. Genenko

Abstract: A stochastic model for polarization switching in tetragonal ferroelectric ceramics is introduced, which includes sequential 90°- and parallel 180°-switching processes and accounts for the dispersion of characteristic switching times due to a nonuniform spatial distribution of the applied field. It presents merging of the recent multistep stochastic mechanism (MSM) with the earlier nucleation limit… ▽ More A stochastic model for polarization switching in tetragonal ferroelectric ceramics is introduced, which includes sequential 90°- and parallel 180°-switching processes and accounts for the dispersion of characteristic switching times due to a nonuniform spatial distribution of the applied field. It presents merging of the recent multistep stochastic mechanism (MSM) with the earlier nucleation limited switching (NLS) and inhomogeneous field mechanism (IFM) models. The new model provides a much better description of simultaneous polarization and strain responses over a wide time window and a deeper insight into the microscopic switching mechanisms, as is exemplarily shown by comparison with measurements on lead zirconate titanate. △ Less

Submitted 26 April, 2019; originally announced April 2019.

Comments: 11 pages, 3 figures

Stochastic multi-step polarization switching in ferroelectrics

Authors: Y. A. Genenko, R. Khachaturyan, J. Schultheiss, A. Ossipov, J. E. Daniels, J. Koruza

Abstract: Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a new nucleation and growth multi-step model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180°-switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization… ▽ More Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a new nucleation and growth multi-step model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180°-switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb(Zr,Ti)O3 ceramic in a wide range of electric fields over a time domain of five orders of the magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices. △ Less

Submitted 9 January, 2018; originally announced January 2018.

Comments: 25 pages, 9 figures

Journal ref: Phys. Rev. B 97, 144101 (2018)