Showing 1–15 of 15 results for author: Schuller, J A

Quantum materials for energy-efficient neuromorphic computing

Authors: Axel Hoffmann, Shriram Ramanathan, Julie Grollier, Andrew D. Kent, Marcelo Rozenberg, Ivan K. Schuller, Oleg Shpyrko, Robert Dynes, Yeshaiahu Fainman, Alex Frano, Eric E. Fullerton, Giulia Galli, Vitaliy Lomakin, Shyue ** Ong, Amanda K. Petford-Long, Jonathan A. Schuller, Mark D. Stiles, Yayoi Takamura, Yimei Zhu

Abstract: Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, su… ▽ More Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems. △ Less

Submitted 4 April, 2022; originally announced April 2022.

Journal ref: APL Materials 10, 070904 (2022)

The scaling of the microLED and the advantage of 2D materials

Authors: Xuejun Xie, Hamid T. Chorsi, Kunjesh Agashiwala, Hsun-Ming Chang, Jiahao Kang, Jae Hwan Chu, Ibrahim Sarpkaya, Han Htoon, Jon A. Schuller, Kaustav Banerjee

Abstract: The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size re… ▽ More The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size reduces. Using Finite Element Analysis (FEA) method and Finite-Difference Time-Domain (FDTD) method, we find that reducing the thickness of the LED can reduce the current leaking to the sidewalls and reduce the total internal reflection simultaneously. A promising solution to this problem is by using atomically thin 2D materials to make LEDs. However, monolayer inorganic 2D materials that can provide red, green and blue emission are still lacking. Based on the blue light-emitting material fluorographene (CF), partially fluorinated graphene (CFx) is synthesized in this work to emit red and green colors from 683 nm to 555 nm (limited by the instrument). This work also demonstrates lithographically defined regions with different colors, paving the way for the scaling of microLED. △ Less

Submitted 18 January, 2021; originally announced January 2021.

Ferroelastic Hysteresis in Thin Films of Methylammonium Lead Iodide

Authors: Rhys M. Kennard, Clayton J. Dahlman, Ryan A. DeCrescent, Jon A. Schuller, Kunal Mukherjee, Ram Seshadri, Michael L. Chabinyc

Abstract: Mechanical strain can modify the structural and electronic properties of methylammonium lead iodide MAPbI3. The consequences of ferroelastic hysteresis, which involves the retention of structural memory upon cycles of deformation, in polycrystalline thin films of MAPbI3 are reported. Repeatedly bent films of MAPbI3 on flexible polyimide substrates were examined using Grazing Incidence Wide-Angle X… ▽ More Mechanical strain can modify the structural and electronic properties of methylammonium lead iodide MAPbI3. The consequences of ferroelastic hysteresis, which involves the retention of structural memory upon cycles of deformation, in polycrystalline thin films of MAPbI3 are reported. Repeatedly bent films of MAPbI3 on flexible polyimide substrates were examined using Grazing Incidence Wide-Angle X-ray Scattering (GIWAXS) to quantitatively characterize the strain state, populations, and minimum sizes of twin domains. Approximate locations for the coercive stress and saturation on the ferroelastic stress-strain curve are identified, and domains from differently-strained twin sets in the films are found to interact with each other. The presence of specific twin domains is found to correlate to reports of the heterogeneity of strain states with defect content. Long-term stability testing reveals that domain walls are highly immobile over extended periods. Nucleation of new domain walls occurs for specific mechanical strains and correlates closely with degradation of the films. These results help to explain the behavior of ion migration, degradation rate, and photoluminescence in thin films under compressive and tensile strain. △ Less

Submitted 10 October, 2020; originally announced October 2020.

Comments: 19 pages + References, 9 figures, Supporting Information included

Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics

Authors: Guillaume Lheureux, Morteza Monavarian, Ryan Anderson, Ryan A. DeCrescent, Joel Bellessa, Clementine Symonds, Jon A. Schuller, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Abstract: We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated using electrochemical etching on freestanding semipolar GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and wit… ▽ More We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated using electrochemical etching on freestanding semipolar GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The results indicate presence of a TP mode at ~ 455 nm on the structure after the Ag deposition. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (~ 4 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3) , suggesting an application of the nanoporous GaN based TP structure for optical sensing. △ Less

Submitted 5 January, 2020; originally announced January 2020.

Comments: 8 pages, 4 figures

Soft phonons and ultralow lattice thermal conductivity in the Dirac semimetal Cd3As2

Authors: Shengying Yue, Hamid T. Chorsi, Manik Goyal, Timo Schumann, Runqing Yang, Tashi Xu, Bowen Deng, Susanne Stemmer, Jon A. Schuller, Bolin Liao

Abstract: Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combi… ▽ More Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combine first-principles lattice dynamics calculations and temperature-dependent high-resolution Raman spectroscopy of high-quality single-crystal thin films grown by molecular beam epitaxy to reveal the existence of a group of soft optical phonon modes at the Brillouin zone center of Cd3As2. These soft phonon modes significantly increase the scattering phase space of heat-carrying acoustic phonons and are the origin of the low lattice thermal conductivity of Cd3As2. Furthermore, we show that the interplay between the phonon-phonon Umklapp scattering rates and the soft optical phonon frequency explains the unusual non-monotonic temperature dependence of the lattice thermal conductivity of Cd3As2. Our results further suggest that the soft phonon modes are potentially induced by a Kohn anomaly associated with the Dirac nodes, in analogy to similar, nonetheless weaker, effects in graphene and Weyl semimetals. △ Less

Submitted 10 August, 2019; originally announced August 2019.

Comments: 7 pages, 4 figure. Comments are welcome

Journal ref: Phys. Rev. Research 1, 033101 (2019)

Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd$_3$As$_2$

Authors: Hamid T. Chorsi, Shengying Yue, Prasad P. Iyer, Manik Goyal, Timo Schumann, Susanne Stemmer, Bolin Liao, Jon A. Schuller

Abstract: In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demons… ▽ More In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of Cd$_3$As$_2$ thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown Cd$_3$As$_2$ promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas. △ Less

Submitted 28 July, 2019; originally announced July 2019.

Journal ref: Advanced Optical Materials, 2020

Unidirectional Luminescence from Quantum Well Metasurfaces

Authors: Prasad P. Iyer, Ryan A. DeCrescent, Nikita A. Butakov, Abdullah Alhassan, Guillaume Lheureux, Claude Weisbuch, Shuji Nakamura, Steven P. DenBaars, Jon. A. Schuller

Abstract: III-Nitride light emitting diodes (LEDs) are the backbone of ubiquitous lighting and display applications. Imparting directional emission is an essential requirement for many LED implementations. Although optical packaging, nano-patterning and surface roughening techniques can enhance LED extraction, directing the emitted light requires bulky optical components. Optical metasurfaces provide precis… ▽ More III-Nitride light emitting diodes (LEDs) are the backbone of ubiquitous lighting and display applications. Imparting directional emission is an essential requirement for many LED implementations. Although optical packaging, nano-patterning and surface roughening techniques can enhance LED extraction, directing the emitted light requires bulky optical components. Optical metasurfaces provide precise control over transmitted and reflected waveforms, suggesting a new route for directing light emission. However, it is difficult to adapt metasurface concepts for incoherent light emission, due to the lack of a phase-locking incident wave. In this Letter, we demonstrate metasurface-based design of InGaN/GaN quantum-well structures that generate narrow, unidirectional transmission and emission lobes at arbitrary engineered angles. We show that the directions and polarization of emission differ significantly from transmission, in agreement with an analytical Local Density of Optical States (LDOS) model. The results presented in this Letter open a new paradigm for exploiting metasurface functionality in light emitting devices. △ Less

Submitted 6 May, 2019; originally announced May 2019.

Comments: 22 pages including Supplementary Information, 4 main article figures

Device Platform for Electrically Reconfigurable Dielectric Metasurfaces

Authors: Prasad P Iyer, Mihir Pendharkar, Chris J. Palmstrøm, Jon A. Schuller

Abstract: Achieving an electrically tunable phased array optical antenna surface has been a principal challenge in the field of metasurfaces. In this letter, we demonstrate a device platform for achieving reconfigurable control over the resonant wavelength of a subwavelength optical antenna through free-carrier injection. We engineer and grow, using molecular beam epitaxy, a heterostructure of In1-xAlxAs/In… ▽ More Achieving an electrically tunable phased array optical antenna surface has been a principal challenge in the field of metasurfaces. In this letter, we demonstrate a device platform for achieving reconfigurable control over the resonant wavelength of a subwavelength optical antenna through free-carrier injection. We engineer and grow, using molecular beam epitaxy, a heterostructure of In1-xAlxAs/InAs/AlyGa1-ySb layers designed to achieve large amplitude and phase modulation of light by maximizing the refractive index change in regions of resonant field enhancement The p-i-n layers are grown on a heavily doped n-InAs layer which forms a reflecting substrate to confine the Mie resonances within the nanowires of the index tunable layers. We outline the fabrication process developed to form such tunable metasurface elements using a four-step projection lithography process and a self-aligned vertical dry etch. We experimentally demonstrate the operation of an electrically reconfigurable optical antenna element where the resonant wavelength blue shifts by 200nm only during carrier-injection. We extrapolate the experimentally measured InAs refractive index shifts to show we can achieve nearly π phase shift in a metasurface array. This solid-state device platform enables us to contact each resonant element independently to form a truly reconfigurable Fourier optical element with the promise of arbitrary control of the electromagnetic wavefront at the subwavelength scale. △ Less

Submitted 2 December, 2018; originally announced March 2019.

Bright magnetic dipole radiation from two-dimensional lead-halide perovskites

Authors: Ryan A. DeCrescent, Naveen R. Venkatesan, Clayton J. Dahlman, Rhys M. Kennard, Xie Zhang, Wenhao Li, Xinhong Du, Michael L. Chabinyc, Rashid Zia, Jon A. Schuller

Abstract: Light-matter interactions in semiconductor systems are uniformly treated within the electric dipole (ED) approximation, as multipolar interactions are considered "forbidden". Here, we demonstrate that this approximation inadequately describes light emission in novel two-dimensional hybrid organic-inorganic perovskite materials (2D HOIPs) --- a class of solution processable layered semiconductor wi… ▽ More Light-matter interactions in semiconductor systems are uniformly treated within the electric dipole (ED) approximation, as multipolar interactions are considered "forbidden". Here, we demonstrate that this approximation inadequately describes light emission in novel two-dimensional hybrid organic-inorganic perovskite materials (2D HOIPs) --- a class of solution processable layered semiconductor with promising optoelectronic properties. Consequently, photoluminescence (PL) spectra become strongly dependent on the experimental geometry, a fact that is often overlooked, though critical for correct optical characterization of materials. Using energy-momentum and time-resolved spectroscopies, we experimentally demonstrate that low-energy sideband emission in 2D HOIPs exhibits a highly unusual, multipolar polarization and angle dependence. Using combined electromagnetic and quantum-mechanical analyses, we attribute this radiation pattern to an out-of-plane oriented magnetic dipole transition arising from the 2D character of the excited and ground state orbitals. Symmetry arguments point toward the presence of significant inversion symmetry-breaking mechanisms that are currently under great debate. These results provide a new perspective on the origins of unexpected sideband emission in HOIPs, clarify discrepancies in previous literature, and generally challenge the paradigm of ED-dominated light-matter interactions in novel optoelectronic materials. △ Less

Submitted 15 April, 2019; v1 submitted 16 January, 2019; originally announced January 2019.

Comments: 8 Pages + References, 5 Figures, Supporting Information arXiv replace (2019/04/15): updated references, updated (optical power) units in Fig. 4, updated figure commentary, new supporting information figure

Thermal tuning capabilities of semiconductor metasurface resonators

Authors: Tomer Lewi, Nikita A. Butakov, Jon A. Schuller

Abstract: Metasurfaces exploit the ability to engineer the optical phase, amplitude and polarization at subwavelength dimensions providing unprecedented control of light. The realization of the all dielectric approach to metasurfaces has led to the demonstration of extensive flat optical elements and functionalities with low losses. However, to reach their ultimate potential, metasurfaces must move beyond s… ▽ More Metasurfaces exploit the ability to engineer the optical phase, amplitude and polarization at subwavelength dimensions providing unprecedented control of light. The realization of the all dielectric approach to metasurfaces has led to the demonstration of extensive flat optical elements and functionalities with low losses. However, to reach their ultimate potential, metasurfaces must move beyond static operation and incorporate active tunability and reconfigurable functions. The central challenge is achieving large tunability in subwavelength resonator elements which require large optical effects in response to external stimuli. Here we study the thermal tunability of high-index silicon and germanium semiconductor resonators over a large temperature range. We demonstrate thermal tuning of Mie resonances due to the normal positive thermo-optic effect (dn/dT >0) over a wide infrared range. We show that at higher temperatures and long wavelengths the sign of the thermo-optic coefficient is reversed (dn/dT<0) culminating in a negative induced index due to thermal excitation of free carriers. We also demonstrate the tuning of high order Mie resonances by several linewidths with a temperature swing of ΔT<100K. Finally, we exploit the larger thermo-optic coefficient at NIR wavelengths in Si metasurfaces to realize optical switching and tunable metafilters. △ Less

Submitted 16 January, 2019; v1 submitted 26 February, 2018; originally announced February 2018.

Thermo-optically Reconfigurable PbTe Mie Resonator Meta-atoms

Authors: Tomer Lewi, Hayden A. Evans, Nikita A. Butakov, Jon A. Schuller

Abstract: Subwavelength Mie resonators have enabled new classes of optical antennas1-4, photodetectors5,6, antireflection coatings7, and magnetic mirrors8 and can act as the basic meta-atoms constituents of low-loss dielectric metasurfaces2-4,8-10. In any application, tunable Mie resonances are key to achieving dynamic and reconfigurable operation11,12. Sub-linewidth tuning has been achieved via coupling to… ▽ More Subwavelength Mie resonators have enabled new classes of optical antennas1-4, photodetectors5,6, antireflection coatings7, and magnetic mirrors8 and can act as the basic meta-atoms constituents of low-loss dielectric metasurfaces2-4,8-10. In any application, tunable Mie resonances are key to achieving dynamic and reconfigurable operation11,12. Sub-linewidth tuning has been achieved via coupling to liquid crystals13, ultrafast free-carrier injection14,15,16,17, stretchable substrates18 and with phase change materials19. Here, we demonstrate ultra-wide dynamic tuning of PbTe Mie resonators fabricated via both laser ablation and a novel solution-processing approach. Taking advantage of the extremely large thermo-optic (TO) coefficient and high refractive index of PbTe, we demonstrate high-quality factor Mie-resonances that are tuned by several linewidths with temperature modulation as small as ΔT~10K. When combined into metasurface arrays these effects can be exploited in ultra-narrow active notch filers and metasurface phase shifters that require only few-kelvin modulation. These findings demonstrate the enabling potential of thermo-optically tunable PbTe meta-atoms and metasurfaces. △ Less

Submitted 2 March, 2017; originally announced March 2017.

Ultra-wide plasmonic tuning of semiconductor metasurface resonators on epsilon near zero media

Authors: Prasad. P. Iyer, Mihir Pendharkar, Chris J. Palmstrøm, Jon A. Schuller

Abstract: Fully reconfigurable metasurfaces would enable new classes of optical devices that provide unprecedented control of electromagnetic beamforms. The principal challenge for achieving reconfigurability is the need to generate large tunability of subwavelength, low-Q metasurface resonators. Here, we demonstrate large refractive index tuning can be efficiently facilitated at mid-infrared wavelengths us… ▽ More Fully reconfigurable metasurfaces would enable new classes of optical devices that provide unprecedented control of electromagnetic beamforms. The principal challenge for achieving reconfigurability is the need to generate large tunability of subwavelength, low-Q metasurface resonators. Here, we demonstrate large refractive index tuning can be efficiently facilitated at mid-infrared wavelengths using novel temperature-dependent control over free-carrier refraction. In doped InSb we demonstrate nearly two-fold increase in the electron effective mass leading to a positive refractive index shift (Δn>1.5) far greater than conventional thermo-optic effects. In undoped films we demonstrate more than 10-fold change in the thermal free-carrier concentration producing a near-unity negative refractive index shift. Exploiting both effects within a single resonator system, intrinsic InSb wires on a heavily doped (epsilon near zero) InSb substrate, we demonstrate dynamically tunable Mie resonances. The observed larger than line-width resonance shifts (Δλ>1.5μm) suggest new avenues for highly tunable and reconfigurable mid-infrared semiconductor metasurfaces. △ Less

Submitted 3 February, 2017; originally announced February 2017.

Comments: 24 pages

Morphology dependent optical anisotropies in the n-type polymer P(NDI2OD-T2)

Authors: Steven J. Brown, Ruth A. Schlitz, Michael L. Chabinyc, Jon A. Schuller

Abstract: Organic semiconductors tend to self-assemble into highly ordered and oriented morphologies with anisotropic optical properties. Studying these optical anisotropies provides insight into processing-dependent structural properties and informs the photonic design of organic photovoltaic and light-emitting devices. Here, we measure the anisotropic optical properties of spin-cast films of the n-type po… ▽ More Organic semiconductors tend to self-assemble into highly ordered and oriented morphologies with anisotropic optical properties. Studying these optical anisotropies provides insight into processing-dependent structural properties and informs the photonic design of organic photovoltaic and light-emitting devices. Here, we measure the anisotropic optical properties of spin-cast films of the n-type polymer P(NDI2OD-T2) using momentum-resolved absorption and emission spectroscopies. We quantify differences in the optical anisotropies of films deposited with distinct face-on and edge-on morphologies. In particular, we infer a substantially larger out-of-plane tilt angle of the optical transition dipole moment in high temperature annealed, edge-on films. Measurements of spectral differences between in-plane and out-of-plane dipoles, further indicate regions of disordered polymers in low temperature annealed face-on films that are otherwise obscured in traditional X-ray and optical characterization techniques. The methods and analysis developed in this work provide a way to identify and quantify subtle optical and structural anisotropies in organic semiconductors that are important for understanding and designing highly efficient thin film devices. △ Less

Submitted 24 July, 2016; originally announced July 2016.

Beam engineering for selective and enhanced coupling to multipolar resonances

Authors: Tanya Das, Prasad P. Iyer, Jon A. Schuller

Abstract: Multipolar electromagnetic phenomena in sub-wavelength resonators are at the heart of metamaterial science and technology. In this letter, we demonstrate selective and enhanced coupling to specific multipole resonances via beam engineering. We first derive an analytical method for determining the scattering and absorption of spherical nanoparticles (NPs) that depends only on the local electromagne… ▽ More Multipolar electromagnetic phenomena in sub-wavelength resonators are at the heart of metamaterial science and technology. In this letter, we demonstrate selective and enhanced coupling to specific multipole resonances via beam engineering. We first derive an analytical method for determining the scattering and absorption of spherical nanoparticles (NPs) that depends only on the local electromagnetic field quantities within an inhomogeneous beam. Using this analytical technique, we demonstrate the ability to drastically manipulate the scattering properties of a spherical NP by varying illumination properties and demonstrate the excitation of a longitudinal quadrupole mode that cannot be accessed with conventional illumination. This work enhances the understanding of fundamental light-matter interactions in metamaterials, and lays the foundation for researchers to identify, quantify, and manipulate multipolar light-matter interactions through optical beam engineering. △ Less

Submitted 3 September, 2015; originally announced September 2015.

Journal ref: Phys. Rev. B 92, 241110 (2015)

Independent Electronic and Magnetic Do** in (Ga,Mn)As Based Digital Ferromagnetic Heterostructures

Authors: E. Johnston-Halperin, J. A. Schuller, C. S. Gallinat, T. C. Kreutz, R. C. Myers, R. K. Kawakami, H. Knotz, A. C. Gossard, D. D. Awschalom

Abstract: Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving independent control of electronic do** in the ferromagnetic semiconductor (Ga,Mn)As. Samples are comprised of superlattices of 0.5 monolayer (ML) MnAs alter… ▽ More Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving independent control of electronic do** in the ferromagnetic semiconductor (Ga,Mn)As. Samples are comprised of superlattices of 0.5 monolayer (ML) MnAs alternating with 20 ML GaAs and are grown by low temperature (230 C) atomic layer epitaxy (ALE). This allows for the reduction of excess As incorporation and hence the number of charge-compensating As-related defects. We grow a series of samples with either Be or Si do** in the GaAs spacers (p- and n-type dopants, respectively), and verify their structural quality by in situ reflection high-energy electron diffraction (RHEED) and ex situ x-ray diffraction. Magnetization measurements reveal ferromagnetic behavior over the entire do** range, and show no sign of MnAs precipitates. Finally, magneto-transport shows the giant planar Hall effect and strong (20%) resistance fluctuations that may be related to domain wall motion. △ Less

Submitted 21 March, 2003; originally announced March 2003.

Comments: Submitted to Physical Review B. 30 pages, 9 figures