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Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe$_2$
Authors:
Laric Bobzien,
Jonas Allerbeck,
Nils Krane,
Andres Ortega-Guerrero,
Zihao Wang,
Daniel E. Cintron Figueroa,
Chengye Dong,
Carlo A. Pignedoli,
Joshua A. Robinson,
Bruno Schuler
Abstract:
Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature sub-gap emission and single-photon response. In this let…
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Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature sub-gap emission and single-photon response. In this letter, we investigate the layer-dependent charge state lifetime of Se vacancies in WSe$_2$. In one monolayer WSe$_2$, we observe ultrafast charge transfer from the lowest unoccupied orbital of the top Se vacancy to the graphene substrate within (1.0 $\pm$ 0.2) ps measured via the current saturation in scanning tunneling approach curves. For Se vacancies decoupled by TMD multilayers, we find a sub-exponential increase of the charge lifetime from (62 $\pm$ 14) ps in bilayer to few nanoseconds in four-layer WSe$_2$, alongside a reduction of the defect state binding energy. Additionally, we attribute the continuous suppression and energy shift of the dI/dV in-gap defect state resonances at very close tip--sample distances to a current saturation effect. Our results provide a key measure of the layer-dependent charge transfer rate of chalcogen vacancies in TMDs.
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Submitted 5 July, 2024;
originally announced July 2024.
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Influence of Rhenium Concentration on Charge Do** and Defect Formation in MoS2
Authors:
Kyle T. Munson,
Riccardo Torsi,
Fatimah Habis,
Lysander Huberich,
Yu-Chuan Lin,
Yue Yuan,
Ke Wang,
Bruno Schuler,
Yuanxi Wang,
John B. Asbury,
Joshua A. Robinson
Abstract:
Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge do** and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as…
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Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge do** and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as the Re concentration approaches 2 atom%, there is significant clustering of Re in the MoS2. Ab Initio calculations indicate that the transition from isolated Re atoms to Re clusters increases the ionization energy of Re dopants, thereby reducing Re-do** efficacy. Using photoluminescence spectroscopy, we show that Re dopant clustering creates defect states that trap photogenerated excitons within the MoS2 lattice. These results provide insight into how the local concentration of metal dopants affect carrier density, defect formation, and exciton recombination in TMDs, which can aid the development of future TMD-based devices with improved electronic and photonic properties.
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Submitted 3 January, 2024; v1 submitted 28 December, 2023;
originally announced December 2023.
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Nanosecond chain dynamics of single-stranded nucleic acids
Authors:
Mark F. Nüesch,
Lisa Pietrek,
Erik D. Holmstrom,
Daniel Nettels,
Valentin von Roten,
Rafael Kronenberg-Tenga,
Ohad Medalia,
Gerhard Hummer,
Benjamin Schuler
Abstract:
The conformational dynamics of single-stranded nucleic acids are fundamental for nucleic acid folding and function. However, their elementary chain dynamics have been difficult to resolve experimentally. Here we employ a combination of single-molecule Förster resonance energy transfer, nanosecond fluorescence correlation spectroscopy, fluorescence lifetime analysis, and nanophotonic enhancement to…
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The conformational dynamics of single-stranded nucleic acids are fundamental for nucleic acid folding and function. However, their elementary chain dynamics have been difficult to resolve experimentally. Here we employ a combination of single-molecule Förster resonance energy transfer, nanosecond fluorescence correlation spectroscopy, fluorescence lifetime analysis, and nanophotonic enhancement to determine the conformational ensembles and rapid chain dynamics of short single-stranded nucleic acids in solution. To interpret the experimental results in terms of end-to-end distance dynamics, we utilize the hierarchical chain growth approach, simple polymer models, and refinement with Bayesian inference of ensembles to generate structural ensembles that closely align with the experimental data. The resulting chain reconfiguration times are exceedingly rapid, in the 10-ns range. Solvent viscosity-dependent measurements indicate that these dynamics of single-stranded nucleic acids exhibit negligible internal friction and are thus dominated by solvent friction. Our results provide a detailed view of the conformational distributions and rapid dynamics of single-stranded nucleic acids.
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Submitted 22 December, 2023;
originally announced December 2023.
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Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides
Authors:
Feifei Xiang,
Lysander Huberich,
Preston A. Vargas,
Riccardo Torsi,
Jonas Allerbeck,
Anne Marie Z. Tan,
Chengye Dong,
Pascal Ruffieux,
Roman Fasel,
Oliver Gröning,
Yu-Chuan Lin,
Richard G. Hennig,
Joshua A. Robinson,
Bruno Schuler
Abstract:
The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS…
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The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS$_2$ by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). By substrate chemical gating different charge states of sulfur vacancies (Vac$_\text{S}$) and substitutional rhenium dopants (Re$_\text{Mo}$) can be stabilized. Vac$_\text{S}^{-1}$ as well as Re$_\text{Mo}^{0}$ and Re$_\text{Mo}^{-1}$ exhibit local lattice distortions and symmetry-broken defect orbitals attributed to a Jahn-Teller effect (JTE) and pseudo-JTE, respectively. By map** the electronic and geometric structure of single point defects, we disentangle the effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking.
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Submitted 4 August, 2023;
originally announced August 2023.
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Gotta catch 'em all: Modeling All Discrete Alternatives for Industrial Energy System Transitions
Authors:
Hendrik Schricker,
Benedikt Schuler,
Christiane Reinert,
Niklas von der Aßen
Abstract:
Industrial decision-makers often base decisions on mathematical optimization models to achieve cost-efficient design solutions in energy transitions. However, since a model can only approximate reality, the optimal solution is not necessarily the best real-world energy system. Exploring near-optimal design spaces, e.g., by the Modeling All Alternatives (MAA) method, provides a more holistic view o…
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Industrial decision-makers often base decisions on mathematical optimization models to achieve cost-efficient design solutions in energy transitions. However, since a model can only approximate reality, the optimal solution is not necessarily the best real-world energy system. Exploring near-optimal design spaces, e.g., by the Modeling All Alternatives (MAA) method, provides a more holistic view of decision alternatives beyond the cost-optimal solution. However, the MAA method misses out on discrete in-vestment decisions. Incorporating such discrete investment decisions is crucial when modeling industrial energy systems.
Our work extends the MAA method by integrating discrete design decisions. We optimize the design and operation of an industrial energy system transformation using a mixed-integer linear program. First, we explore the continuous, near-optimal design space by applying the MAA method. Thereafter, we sample all discrete design alternatives from the continuous, near-optimal design space.
In a case study, we apply our method to identify all near-optimal design alternatives of an industrial energy system. We find 128 near-optimal design alternatives where costs are allowed to increase to a maximum of one percent offering decision-makers more flexibility in their investment decisions. Our work enables the analysis of discrete design alternatives for industrial energy transitions and supports the decision-making process for investments in energy infrastructure.
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Submitted 20 July, 2023;
originally announced July 2023.
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Dilute Rhenium Do** and its Impact on Intrinsic Defects in MoS2
Authors:
Riccardo Torsi,
Kyle T. Munson,
Rahul Pendurthi,
Esteban A. Marques,
Benoit Van Troeye,
Lysander Huberich,
Bruno Schuler,
Maxwell A. Feidler,
Ke Wang,
Geoffrey Pourtois,
Saptarshi Das,
John B. Asbury,
Yu-Chuan Lin,
Joshua A. Robinson
Abstract:
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) do** of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisi…
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Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) do** of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10x. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the MoS2 growth-front when Re is introduced, resulting in an improved stoichiometry. Remarkably, defect photoluminescence (PL) commonly seen in as-grown MOCVD MoS2 is suppressed by 6x at 0.05 atomic percent (at.%) Re and completely quenched with 1 at.% Re. Furthermore, Re-MoS2 transistors exhibit up to 8x higher drain current and enhanced mobility compared to undoped MoS2 because of the improved material quality. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
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Submitted 31 January, 2023;
originally announced February 2023.
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Engineering and probing atomic quantum defects in 2D semiconductors: A perspective
Authors:
Joshua A. Robinson,
Bruno Schuler
Abstract:
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts that promise to push quantum technologies beyond cryogenic environments. Mission-critical capabilities towards realizing these goals are the mitigation of accide…
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Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts that promise to push quantum technologies beyond cryogenic environments. Mission-critical capabilities towards realizing these goals are the mitigation of accidental lattice imperfections and the deterministic generation of desirable defects. In this perspective, the authors review some of their recent results on engineering and probing atomic point defects in 2D TMDs. Furthermore we provide a personal outlook on the next frontiers in this fast evolving field.
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Submitted 8 October, 2021;
originally announced October 2021.
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Controllable p-type Do** of 2D WSe2 via Vanadium Substitution
Authors:
Azimkhan Kozhakhmetov,
Samuel Stolz,
Anne Marie Z. Tan,
Rahul Pendurthi,
Saiphaneendra Bachu,
Furkan Turker,
Nasim Alem,
Jessica Kachian,
Saptarshi Das,
Richard G. Hennig,
Oliver Gröning,
Bruno Schuler,
Joshua A. Robinson
Abstract:
Scalable substitutional do** of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to develo** next-generation logic and memory devices based on 2D materials. To date, do** efforts are still nascent. Here, we report scalable growth and vanadium (V) do** of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400…
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Scalable substitutional do** of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to develo** next-generation logic and memory devices based on 2D materials. To date, do** efforts are still nascent. Here, we report scalable growth and vanadium (V) do** of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400 °C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type do** via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, our study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
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Submitted 28 July, 2021;
originally announced July 2021.
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Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS$_2$
Authors:
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jonah B. Haber,
Tianyi Zhang,
Azimkhan Kozhakhmetov,
Joshua A. Robinson,
Mauricio Terrones,
Jascha Repp,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Bruno Schuler
Abstract:
We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides (TMDs). Hydrogenated carbon impurities located at chalcogen sites introduced by chemical do** can be activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state,…
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We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides (TMDs). Hydrogenated carbon impurities located at chalcogen sites introduced by chemical do** can be activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state, the carbon impurity exhibits a magnetic moment of 1 $μ_\text{B}$ resulting from an unpaired electron populating a spin-polarized in-gap orbital of C$^{\bullet -}_\text{S}$. Fermi level control by the underlying graphene substrate can charge and decharge the defect, thereby activating or quenching the defect magnetic moment. By inelastic tunneling spectroscopy and density functional theory calculations we show that the CRI defect states couple to a small number of vibrational modes, including a local, breathing-type mode. Interestingly, the electron-phonon coupling strength critically depends on the spin state and differs for monolayer and bilayer WS$_2$. These carbon radical ions in TMDs comprise a new class of surface-bound, single-atom spin-qubits that can be selectively introduced, are spatially precise, feature a well-understood vibronic spectrum, and are charge state controlled.
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Submitted 27 August, 2020;
originally announced August 2020.
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The FRET-based structural dynamics challenge -- community contributions to consistent and open science practices
Authors:
Eitan Lerner,
Benjamin Ambrose,
Anders Barth,
Victoria Birkedal,
Scott C. Blanchard,
Richard Borner,
Thorben Cordes,
Timothy D. Craggs,
Taekjip Ha,
Gilad Haran,
Thorsten Hugel,
Antonino Ingargiola,
Achillefs Kapanidis,
Don C. Lamb,
Ted Laurence,
Nam ki Lee,
Edward A. Lemke,
Emmanuel Margeat,
Jens Michaelis,
Xavier Michalet,
Daniel Nettels,
Thomas-Otavio Peulen,
Benjamin Schuler,
Claus A. M. Seidel,
Hamid So-leimaninejad
, et al. (1 additional authors not shown)
Abstract:
Single-molecule Förster resonance energy transfer (smFRET) has become a mainstream technique for probing biomolecular structural dynamics. The rapid and wide adoption of the technique by an ever-increasing number of groups has generated many improvements and variations in the technique itself, in methods for sample preparation and characterization, in analysis of the data from such experiments, an…
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Single-molecule Förster resonance energy transfer (smFRET) has become a mainstream technique for probing biomolecular structural dynamics. The rapid and wide adoption of the technique by an ever-increasing number of groups has generated many improvements and variations in the technique itself, in methods for sample preparation and characterization, in analysis of the data from such experiments, and in analysis codes and algorithms. Recently, several labs that employ smFRET have joined forces to try to bring the smFRET community together in adopting a consensus on how to perform experiments and analyze results for achieving quantitative structural information. These recent efforts include multi-lab blind-tests to assess the accuracy and precision of smFRET between different labs using different procedures, the formal assembly of the FRET community and development of smFRET procedures to be considered for entries in the wwPDB. Here we delve into the different approaches and viewpoints in the field. This position paper describes the current "state-of-the field", points to unresolved methodological issues for quantitative structural studies, provides a set of 'soft recommendations' about which an emerging consensus exists, and a list of resources that are openly available. To make further progress, we strongly encourage 'open science' practices. We hope that this position paper will provide a roadmap for newcomers to the field, as well as a reference for seasoned practitioners.
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Submitted 4 June, 2020;
originally announced June 2020.
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How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
Authors:
Bruno Schuler,
Jun-Ho Lee,
Christoph Kastl,
Katherine A. Cochrane,
Christopher T. Chen,
Sivan Refaely-Abramson,
Shengjun Yuan,
Edo van Veen,
Rafael Roldán,
Nicholas J. Borys,
Roland J. Koch,
Shaul Aloni,
Adam M. Schwartzberg,
D. Frank Ogletree,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided in…
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Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and do** of TMDs.
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Submitted 15 May, 2020;
originally announced May 2020.
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Transition path dynamics of a nanoparticle in a bistable optical trap
Authors:
Niels Zijlstra,
Daniel Nettels,
Rohit Satija,
Dmitrii E. Makarov,
Benjamin Schuler
Abstract:
Many processes in chemistry, physics, and biology involve rare events in which the system escapes from a metastable state by surmounting an activation barrier. Examples range from chemical reactions, protein folding, and nucleation events to the catastrophic failure of bridges. A challenge in understanding the underlying mechanisms is that the most interesting information is contained within the r…
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Many processes in chemistry, physics, and biology involve rare events in which the system escapes from a metastable state by surmounting an activation barrier. Examples range from chemical reactions, protein folding, and nucleation events to the catastrophic failure of bridges. A challenge in understanding the underlying mechanisms is that the most interesting information is contained within the rare transition paths, the exceedingly short periods when the barrier is crossed. To establish a model process that enables access to all relevant timescales, although highly disparate, we probe the dynamics of single dielectric particles in a bistable optical trap in solution. Precise localization by high-speed tracking enables us to resolve the transition paths and relate them to the detailed properties of the 3D potential within which the particle diffuses. By varying the barrier height and shape, the experiments provide a stringent benchmark of current theories of transition path dynamics.
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Submitted 19 December, 2019;
originally announced December 2019.
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Depletion interactions modulate coupled folding and binding in crowded environments
Authors:
Franziska Zosel,
Andrea Soranno,
Daniel Nettels,
Benjamin Schuler
Abstract:
Intrinsically disordered proteins (IDPs) abound in cellular regulation. Their interactions are often transitory and highly sensitive to salt concentration and posttranslational modifications. However, little is known about the effect of macromolecular crowding on the kinetics and stability of the interactions of IDPs with their cellular targets. Here, we investigate the influence of crowding on th…
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Intrinsically disordered proteins (IDPs) abound in cellular regulation. Their interactions are often transitory and highly sensitive to salt concentration and posttranslational modifications. However, little is known about the effect of macromolecular crowding on the kinetics and stability of the interactions of IDPs with their cellular targets. Here, we investigate the influence of crowding on the coupled folding and binding between two IDPs, using polyethylene glycol as a crowding agent across a broad size range. Single-molecule Förster resonance energy transfer allows us to quantify several key parameters simultaneously: equilibrium dissociation constants, kinetic association and dissociation rates, and translational diffusion coefficients resulting from changes in microviscosity. We find that the stability of the IDP complex increases not only with the concentration but also with the size of the crowders, in contradiction to scaled-particle theory. However, both the equilibrium and the kinetic results can be explained quantitatively by depletion interactions if the polymeric properties of proteins and crowders are taken into account. This approach thus provides an integrated framework for addressing the complex interplay between depletion effects and polymer physics on IDP interactions in a crowded environment.
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Submitted 13 December, 2019;
originally announced December 2019.
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Electrically driven photon emission from individual atomic defects in monolayer WS2
Authors:
Bruno Schuler,
Katherine A. Cochrane,
Christoph Kastl,
Ed Barnard,
Ed Wong,
Nicholas Borys,
Adam M. Schwartzberg,
D. Frank Ogletree,
F. Javier García de Abajo,
Alexander Weber-Bargioni
Abstract:
Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstr…
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Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstrate electrically stimulated photon emission from individual point defects in a 2D material. Specifically, by bringing a metallic tip into close proximity to a discrete defect state in the band gap of WS2, we induce inelastic tip-to-defect electron tunneling with an excess of transition energy carried by the emitted photons. We gain atomic spatial control over the emission through the position of the tip, while the spectral characteristics are highly customizable by varying the applied tip-sample voltage. Atomically resolved emission maps of individual sulfur vacancies and chromium substituent defects are in excellent agreement with the electron density of their respective defect orbitals as imaged via conventional elastic scanning tunneling microscopy. Inelastic charge-carrier injection into localized defect states of 2D materials thus provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.
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Submitted 10 October, 2019;
originally announced October 2019.
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Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors
Authors:
Martik Aghajanian,
Bruno Schuler,
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Arash A. Mostofi,
Johannes Lischner
Abstract:
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave functi…
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A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at $Γ$ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
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Submitted 5 September, 2019;
originally announced September 2019.
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Efficient conversion of chemical energy into mechanical work by Hsp70 chaperones
Authors:
Salvatore Assenza,
Alberto S. Sassi,
Ruth Kellner,
Ben Schuler,
Paolo De Los Rios,
Alessandro Barducci
Abstract:
Hsp70 molecular chaperones are abundant ATP-dependent nanomachines that actively reshape non-native, misfolded proteins and assist a wide variety of essential cellular processes. Here we combine complementary computational/theoretical approaches to elucidate the structural and thermodynamic details of the chaperone-induced expansion of a substrate protein, with a particular emphasis on the critica…
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Hsp70 molecular chaperones are abundant ATP-dependent nanomachines that actively reshape non-native, misfolded proteins and assist a wide variety of essential cellular processes. Here we combine complementary computational/theoretical approaches to elucidate the structural and thermodynamic details of the chaperone-induced expansion of a substrate protein, with a particular emphasis on the critical role played by ATP hydrolysis. We first determine the conformational free-energy cost of the substrate expansion due to the binding of multiple chaperones using coarse-grained molecular simulations. We then exploit this result to implement a non-equilibrium rate model which estimates the degree of expansion as a function of the free energy provided by ATP hydrolysis. Our results are in quantitative agreement with recent single-molecule FRET experiments and highlight the stark non-equilibrium nature of the process, showing that Hsp70s are optimized to convert effectively chemical energy into mechanical work close to physiological conditions.
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Submitted 29 March, 2019; v1 submitted 5 February, 2019;
originally announced February 2019.
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Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Authors:
Sara Barja,
Sivan Refaely-Abramson,
Bruno Schuler,
Diana Y. Qiu,
Artem Pulkin,
Sebastian Wickenburg,
Hye** Ryu,
Miguel M. Ugeda,
Christoph Kastl,
Christopher Chen,
Choongyu Hwang,
Adam Schwartzberg,
Shaul Aloni,
Sung-Kwan Mo,
D. Frank Ogletree,
Michael F. Crommie,
Oleg V. Yazyev,
Steven G. Louie,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scan…
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Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scanning Tunneling Microscopy (STM) images. However, TEM imaging measurements do not provide direct access to the electronic structure of individual defects; and while Scanning Tunneling Spectroscopy (STS) is a direct probe of local electronic structure, the interpretation of the chemical nature of atomically-resolved STM images of point defects in 2D-TMDs can be ambiguous. As a result, the assignment of point defects as vacancies or substitutional atoms of different kinds in 2D-TMDs, and their influence on their electronic properties, has been inconsistent and lacks consensus. Here, we combine low-temperature non-contact atomic force microscopy (nc-AFM), STS, and state-of-the-art ab initio density functional theory (DFT) and GW calculations to determine both the structure and electronic properties of the most abundant individual chalcogen-site defects common to 2D-TMDs. Surprisingly, we observe no IGS for any of the chalcogen defects probed. Our results and analysis strongly suggest that the common chalcogen defects in our 2D-TMDs, prepared and measured in standard environments, are substitutional oxygen rather than vacancies.
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Submitted 6 March, 2020; v1 submitted 8 October, 2018;
originally announced October 2018.
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Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Authors:
Bruno Schuler,
Diana Y. Qiu,
Sivan Refaely-Abramson,
Christoph Kastl,
Christopher T. Chen,
Sara Barja,
Roland J. Koch,
D. Frank Ogletree,
Shaul Aloni,
Adam M. Schwartzberg,
Jeffrey B. Neaton,
Steven G. Louie,
Alexander Weber-Bargioni
Abstract:
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional do** in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure…
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Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional do** in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states of the vacancy provide a unique fingerprint of this defect. Direct imaging of the defect orbitals by STM and state-of-the-art GW calculations reveal that the large splitting of 252 meV between these defect states is induced by spin-orbit coupling. The controllable incorporation and potential decoration of chalcogen vacancies provide a new route to tailor the optical, catalytic and magnetic properties of TMDs.
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Submitted 19 August, 2019; v1 submitted 5 October, 2018;
originally announced October 2018.
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Precision and accuracy of single-molecule FRET measurements - a worldwide benchmark study
Authors:
Björn Hellenkamp,
Sonja Schmid,
Olga Doroshenko,
Oleg Opanasyuk,
Ralf Kühnemuth,
Soheila Rezaei Adariani,
Anders Barth,
Victoria Birkedal,
Mark E. Bowen,
Hongtao Chen,
Thorben Cordes,
Tobias Eilert,
Carel Fijen,
Markus Götz,
Giorgos Gouridis,
Enrico Gratton,
Taekjip Ha,
Christian A. Hanke,
Andreas Hartmann,
Jelle Hendrix,
Lasse L. Hildebrandt,
Johannes Hohlbein,
Christian G. Hübner,
Eleni Kallis,
Achillefs N. Kapanidis
, et al. (28 additional authors not shown)
Abstract:
Single-molecule Förster resonance energy transfer (smFRET) is increasingly being used to determine distances, structures, and dynamics of biomolecules in vitro and in vivo. However, generalized protocols and FRET standards ensuring both the reproducibility and accuracy of measuring FRET efficiencies are currently lacking. Here we report the results of a worldwide, comparative, blind study, in whic…
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Single-molecule Förster resonance energy transfer (smFRET) is increasingly being used to determine distances, structures, and dynamics of biomolecules in vitro and in vivo. However, generalized protocols and FRET standards ensuring both the reproducibility and accuracy of measuring FRET efficiencies are currently lacking. Here we report the results of a worldwide, comparative, blind study, in which 20 labs determined the FRET efficiencies of several dye-labeled DNA duplexes. Using a unified and straightforward method, we show that FRET efficiencies can be obtained with a standard deviation between $Δ$E = +-0.02 and +-0.05. We further suggest an experimental and computational procedure for converting FRET efficiencies into accurate distances. We discuss potential uncertainties in the experiment and the modelling. Our extensive quantitative assessment of intensity-based smFRET measurements and correction procedures serve as an essential step towards validation of distance networks with the ultimate aim to archive reliable structural models of biomolecular systems obtained by smFRET-based hybrid methods.
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Submitted 29 December, 2017; v1 submitted 10 October, 2017;
originally announced October 2017.
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Effect of electron-phonon interaction on the formation of one-dimensional electronic states in coupled Cl vacancies
Authors:
Bruno Schuler,
Mats Persson,
Sami Paavilainen,
Niko Pavliček,
Leo Gross,
Gerhard Meyer,
Jascha Repp
Abstract:
The formation of extended electron states in one-dimensional nanostructures is of key importance for the function of molecular electronics devices. Here we study the effects of strong electron-phonon interaction on the formation of extended electronic states in intentionally created Cl vacancy pairs and chains in a NaCl bilayer on Cu(111). The interaction between the vacancies was tailored by fabr…
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The formation of extended electron states in one-dimensional nanostructures is of key importance for the function of molecular electronics devices. Here we study the effects of strong electron-phonon interaction on the formation of extended electronic states in intentionally created Cl vacancy pairs and chains in a NaCl bilayer on Cu(111). The interaction between the vacancies was tailored by fabricating vacancy pairs and chains of different orientation and separation with atomic precision using vertical manipulation. Small separation of divacancies led to the formation of symmetric and antisymmetric vacancy states and localized interface-states. By scanning tunneling spectroscopy (STS) we measured their energy splitting and broadening as a function of the inter-vacancy separation. Unexpectedly, the energy splitting between the vacancy states is enlarged by level repulsion resulting from phonon dressing of the electronic states, as evidenced by theory. Already for a few coupled vacancies we observe an emerging band structure of the defect band.
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Submitted 23 March, 2015; v1 submitted 20 March, 2015;
originally announced March 2015.
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Investigating Atomic Contrast in Atomic Force Microscopy and Kelvin Probe Force Microscopy on Ionic Systems using Functionalized Tips
Authors:
Leo Gross,
Bruno Schuler,
Fabian Mohn,
Nikolaj Moll,
Niko Pavliček,
Wolfram Steurer,
Ivan Scivetti,
Konstantinos Kotsis,
Mats Persson,
Gerhard Meyer
Abstract:
Noncontact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM) have become important tools for nanotechnology; however, their contrast mechanisms on the atomic scale are not entirely understood. Here we used chlorine vacancies in NaCl bilayers on Cu(111) as a model system to investigate atomic contrast as a function of applied voltage, tip height, and tip functionalization. W…
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Noncontact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM) have become important tools for nanotechnology; however, their contrast mechanisms on the atomic scale are not entirely understood. Here we used chlorine vacancies in NaCl bilayers on Cu(111) as a model system to investigate atomic contrast as a function of applied voltage, tip height, and tip functionalization. We demonstrate that the AFM contrast on the atomic scale decisively depends on both the tip termination and the sample voltage. On the contrary, the local contact potential difference (LCPD) acquired with KPFM showed the same qualitative contrast for all tip terminations investigated, which resembled the contrast of the electric field of the sample. We find that the AFM contrast stems mainly from electrostatic interactions but its tip dependence cannot be explained by the tip dipole alone. With the aid of a simple electrostatic model and by density functional theory we investigate the underlying contrast mechanisms.
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Submitted 29 August, 2014;
originally announced August 2014.
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Observation of quantum states without a semiclassical equivalence bound by a magnetic field gradient
Authors:
B. Schüler,
M. Cerchez,
Hengyi Xu,
J. Schluck,
T. Heinzel,
D. Reuter,
A. D. Wieck
Abstract:
Resonant transmission through electronic quantum states that exist at the zero points of a magnetic field gradient inside a ballistic quantum wire is reported. Since the semiclassical motion along such a line of zero magnetic field takes place in form of unidirectional snake trajectories, these states have no classical equivalence. The existence of such quantum states has been predicted more than…
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Resonant transmission through electronic quantum states that exist at the zero points of a magnetic field gradient inside a ballistic quantum wire is reported. Since the semiclassical motion along such a line of zero magnetic field takes place in form of unidirectional snake trajectories, these states have no classical equivalence. The existence of such quantum states has been predicted more than a decade ago by theoretical considerations of Reijniers and coworkers [1]. We further show how their properties depend on the amplitude of the magnetic field profile as well as on the Fermi energy.
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Submitted 11 July, 2014;
originally announced July 2014.
