Showing 51–100 of 137 results for author: Schuh, D

Large nuclear spin polarization in gate-defined quantum dots using a single-domain nanomagnet

Authors: Gunnar Petersen, Eric A. Hoffmann, Dieter Schuh, Werner Wegscheider, Geza Giedke, Stefan Ludwig

Abstract: The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field t… ▽ More The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field tends to compensate external magnetic fields. This turns out to be beneficial for polarizing the nuclear spin ensemble. We reach a nuclear spin polarization of ~50%, unrivaled in lateral dots, and explain our manipulation technique using a comprehensive rate equation model. △ Less

Submitted 13 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. Lett. 110, 177602 (2013)

All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

Authors: Markus Ehlert, Cheng Song, Mariusz Ciorga, Martin Utz, Dieter Schuh, Dominique Bougeard, Dieter Weiss

Abstract: We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From… ▽ More We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From the results we determine skew scattering and side jump contribution to the total spin hall conductivity and compare it with the results of experiments on higher conductive n-GaAs channels[Phys. Rev. Lett. 105,156602(2010)]. As a result we conclude that both skewness and side jump contribution cannot be fully independent on the conductivity of the channel. △ Less

Submitted 12 September, 2012; originally announced September 2012.

Comments: 14 pages, 4 figures

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

Authors: P. Olbrich, C. Zoth, P. Lutz, C. Drexler, V. V. Bel'kov, Ya. V. Terent'ev, S. A. Tarasenko, A. N. Semenov, S. V. Ivanov, D. R. Yakovlev, T. Wojtowicz, U. Wurstbauer, D. Schuh, S. D. Ganichev

Abstract: We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalen… ▽ More We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field. △ Less

Submitted 27 April, 2012; originally announced April 2012.

Comments: 14 pages, 13 figures

Enlarged magnetic focusing radius of photoinduced ballistic currents

Authors: Markus Stallhofer, Christoph Kastl, Marcel Brändlein, Dieter Schuh, Werner Wegscheider, Jörg. P. Kotthaus, Gerhard Abstreiter, Alexander Holleitner

Abstract: We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The e… ▽ More We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The experimentally determined radius of the trajectories surprisingly exceeds the classical cyclotron value by far. Monte Carlo simulations suggest electron-electron scattering as the underlying reason. △ Less

Submitted 16 January, 2012; originally announced January 2012.

Comments: pdf-file includes both main article and supplementary information

Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

Authors: M. Griesbeck, M. M. Glazov, E. Ya. Sherman, D. Schuh, W. Wegscheider, C. Schüller, T. Korn

Abstract: We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane,… ▽ More We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane, as well as the $g$ factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 K and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed, the SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors. △ Less

Submitted 24 January, 2012; v1 submitted 23 November, 2011; originally announced November 2011.

Comments: 6 pages, 3 figures

Ultrastrong coupling of the cyclotron transition of a two-dimensional electron gas to a THz metamaterial

Authors: Giacomo Scalari, Curdin Maissen, Dana Turcinková, David Hagenmüller, Simone De Liberato, Cristiano Ciuti, Dieter Schuh, Christian Reichl, Werner Wegscheider, Mattias Beck, Jérôme Faist

Abstract: Artificial cavity photon resonators with ultrastrong light-matter interactions are attracting interest both in semiconductor and superconducting systems, due to the possibility of manipulating the cavity quantum electrodynamic ground state with controllable physical properties. We report here experiments showing ultrastrong light-matter coupling in a terahertz metamaterial where the cyclotron tran… ▽ More Artificial cavity photon resonators with ultrastrong light-matter interactions are attracting interest both in semiconductor and superconducting systems, due to the possibility of manipulating the cavity quantum electrodynamic ground state with controllable physical properties. We report here experiments showing ultrastrong light-matter coupling in a terahertz metamaterial where the cyclotron transition of a high mobility two-dimensional electron gas is coupled to the photonic modes of an array of electronic split-ring resonators. We observe a normalized coupling ratio $\fracΩ{ω_c}=0.58$ between the vacuum Rabi frequency $Ω$ and the cyclotron frequency $ω_c$. Our system appears to be scalable in frequency and could be brought to the microwave spectral range with the potential of strongly controlling the magnetotransport properties of a high-mobility 2DEG. △ Less

Submitted 4 May, 2012; v1 submitted 10 November, 2011; originally announced November 2011.

Journal ref: Science. 2012 Mar 16;335(6074):1323-6

Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

Authors: Christian H. Butschkow, Elisabeth Reiger, Stefan Geißler, Andreas Rudolph, Marcello Soda, Dieter Schuh, Georg Woltersdorf, Werner Wegscheider, Dieter Weiss

Abstract: We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along th… ▽ More We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the concept of the effective magnetic field, usually used to describe ferromagnetic resonance phenomena. The nanowires we investigate exhibit a uniaxial anisotropy which is approximately 5 times larger than the strain induced anisotropy observed in lithographically prepared (Ga,Mn)As stripes. △ Less

Submitted 25 October, 2011; originally announced October 2011.

Comments: 18 pages (pre-print), 7 figures, supporting information on last page

Determination of energy scales in few-electron double quantum dots

Authors: D. Taubert, D. Schuh, W. Wegscheider, S. Ludwig

Abstract: The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly… ▽ More The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays. △ Less

Submitted 3 January, 2012; v1 submitted 18 May, 2011; originally announced May 2011.

Comments: 7 pages, 6 figures

Journal ref: Rev. Sci. Instrum. 82, 123905 (2011)

Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems

Authors: R. Völkl, M. Griesbeck, S. A. Tarasenko, D. Schuh, W. Wegscheider, C. Schüller, T. Korn

Abstract: We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical exc… ▽ More We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes. △ Less

Submitted 13 May, 2011; originally announced May 2011.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B, 83, 241306(R) (2011)

Decoherence-assisted initialization of a resident hole spin polarization in a two-dimensional hole gas

Authors: M. Kugler, K. Korzekwa, P. Machnikowski, C. Gradl, S. Furthmeier, M. Griesbeck, M. Hirmer, D. Schuh, W. Wegscheider, T. Kuhn, C. Schüller, T. Korn

Abstract: We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pum** leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, whi… ▽ More We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pum** leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, while low power resonant optical pum** only leads to a resident hole spin polarization if a sufficient in-plane magnetic field is applied. The competition between two different processes of spin orientation strongly modifies the shape of resonant spin amplification traces. Calculations of the spin dynamics in the electron--hole system are in good agreement with the experimental Kerr rotation and resonant spin amplification traces and allow us to determine the hole spin polarization within the sample after optical orientation, as well as to extract quantitative information about spin dephasing processes at various stages of the evolution. △ Less

Submitted 19 January, 2012; v1 submitted 6 May, 2011; originally announced May 2011.

Comments: 10 pages, 6 figures; moderate modifications, one new figure

Journal ref: Phys. Rev. B 84, 085327 (2011)

Efficient quantum dot single photon extraction into an optical fiber using a nanophotonic directional coupler

Authors: M. Davanco, M. T. Rakher, W. Wegscheider, D. Schuh, A. Badolato, K. Srinivasan

Abstract: We demonstrate a spectrally broadband and effcient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a suspended GaAs nanophotonic waveguide with embedded quantum dots, forming an effcient and broadband directional coupler with standard optical fi… ▽ More We demonstrate a spectrally broadband and effcient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a suspended GaAs nanophotonic waveguide with embedded quantum dots, forming an effcient and broadband directional coupler with standard optical fiber input and output. Effcient photoluminescence collection over a wavelength range of tens of nanometers is demonstrated, and a maximum collection effciency of 6.05 % (corresponding single photon rate of 3.0 MHz) into a single mode optical fiber was estimated for a single quantum dot exciton. △ Less

Submitted 27 September, 2011; v1 submitted 20 April, 2011; originally announced April 2011.

Journal ref: Appl. Phys. Lett. 99, 121101 (2011)

Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells

Authors: J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, J. Förstner, T. Meier, M. Oestreich

Abstract: We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure h… ▽ More We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure higher order effect that exists as well for diamond type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable to map out the internal -otherwise hidden- symmetries in two dimensional systems. Fourth order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects. △ Less

Submitted 7 April, 2011; originally announced April 2011.

Optical polarization of localized hole spins in p-doped quantum wells

Authors: M. Studer, M. Hirmer, D. Schuh, W. Wegscheider, K. Ensslin, G. Salis

Abstract: The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with… ▽ More The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states. △ Less

Submitted 6 April, 2011; originally announced April 2011.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. B 84, 085328 (2011)

A circular dielectric grating for vertical extraction of single quantum dot emission

Authors: M. Davanco, M. T. Rakher, D. Schuh, A. Badolato, K. Srinivasan

Abstract: We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 %… ▽ More We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement. △ Less

Submitted 27 September, 2011; v1 submitted 1 April, 2011; originally announced April 2011.

Comments: (3 pages)

Journal ref: Appl. Phys. Lett. 99, 041102 (2011)

Electron spin relaxation as evidence of excitons in an electron-hole plasma

Authors: S. Oertel, S. Kunz, D. Schuh, W. Wegscheider, J. Hübner, M. Oestreich

Abstract: We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over q… ▽ More We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures. △ Less

Submitted 6 April, 2011; v1 submitted 12 March, 2011; originally announced March 2011.

Magnetoresistance in a High Mobility Two-Dimensional Electron Gas

Authors: L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, R. J. Haug

Abstract: In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the par… ▽ More In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction. △ Less

Submitted 1 December, 2010; originally announced December 2010.

Comments: 4 pages, 4 figures

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Authors: Martin Heiß, Sonia Conesa-Boj, Jun Ren, Hsiang-Han Tseng, Adam Gali, Andreas Rudolph, Emanuele Uccelli, Francesca Peiro, Joan Ramon Morante, Dieter Schuh, Elisabeth Reiger, Efthimios Kaxiras, Jordi Arbiol, Anna Fontcuberta i Morral

Abstract: A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In… ▽ More A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results. △ Less

Submitted 23 November, 2010; originally announced November 2010.

Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures

Authors: V. Lechner, L. E. Golub, F. Lomakina, V. V. Bel'kov, P. Olbrich, S. Stachel, I. Caspers, M. Griesbeck, M. Kugler, M. J. Hirmer, T. Korn, C. Schüller, D. Schuh, W. Wegscheider, S. D. Ganichev

Abstract: We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum w… ▽ More We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms. △ Less

Submitted 19 November, 2010; originally announced November 2010.

Comments: 10 pages, 10 figures

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Authors: Mariusz Ciorga, Christian Wolf, Andreas Einwanger, Martin Utz, Dieter Schuh, Dieter Weiss

Abstract: We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of interplay between spin-transport-related contribution and tunneling anisotropic magnetoresistance of magnetic contacts. The ma… ▽ More We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of interplay between spin-transport-related contribution and tunneling anisotropic magnetoresistance of magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ohm which is twice the magnitude of the measured non-local signal. △ Less

Submitted 10 November, 2010; originally announced November 2010.

Comments: submitted to Appl. Phys. Lett

Tunable Non-local Coupling between Kondo Impurities

Authors: Daniel Tutuc, Bogdan Popescu, Dieter Schuh, Werner Wegscheider, Rolf J. Haug

Abstract: We study the tuning mechanisms of the Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction between two lateral quantum dots in the Kondo regime. At zero magnetic field we observe the expected splitting of the Kondo resonance and measure the RKKY interaction strength J as a function of the asymmetry between the two Kondo temperatures. At finite magnetic fields a chiral coupling between the qua… ▽ More We study the tuning mechanisms of the Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction between two lateral quantum dots in the Kondo regime. At zero magnetic field we observe the expected splitting of the Kondo resonance and measure the RKKY interaction strength J as a function of the asymmetry between the two Kondo temperatures. At finite magnetic fields a chiral coupling between the quantum dots is observed in the Kondo chessboard and we probe the presence of the exchange interaction by analyzing the Kondo temperature with magnetic field. △ Less

Submitted 7 February, 2011; v1 submitted 27 October, 2010; originally announced October 2010.

Comments: 4 pages, 4 figures

Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas

Authors: M. Studer, M. P. Walser, S. Baer, H. Rusterholz, S. Schön, D. Schuh, W. Wegscheider, K. Ensslin, G. Salis

Abstract: The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function of an in-plane electric field. The measured spin-orbit-induced spin-splitting is linear in the drift velocity, even in the regime where the cubic Dresselhaus S… ▽ More The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function of an in-plane electric field. The measured spin-orbit-induced spin-splitting is linear in the drift velocity, even in the regime where the cubic Dresselhaus SOI is important. We relate the measured splitting to the Dresselhaus coupling parameter, the QW confinement, the Fermi wavenumber and to strain effects. From this, the coupling parameter is determined quantitatively, including its sign. △ Less

Submitted 22 December, 2010; v1 submitted 28 September, 2010; originally announced September 2010.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 82, 235320 (2010)

Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

Authors: C. Drexler, V. V. Bel'kov, B. Ashkinadze, P. Olbrich, C. Zoth, V. Lechner, Ya. V. Terent'ev, D. R. Yakovlev, G. Karczewski, T. Wojtowicz, D. Schuh, W. Wegscheider, S. D. Ganichev

Abstract: We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding… ▽ More We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current. △ Less

Submitted 16 September, 2010; originally announced September 2010.

Comments: 3 pages, 4 figures

Forming and confining of dipolar excitons by quantizing magnetic fields

Authors: K. Kowalik-Seidl, X. P. Vögele, F. Seilmeier, D. Schuh, W. Wegscheider, A. W. Holleitner, J. P. Kotthaus

Abstract: We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illumin… ▽ More We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to $\sim 2.5$ $10^{11} cm^{-2}$ - a value comparable with typical carrier densities in modulation-doped structures. △ Less

Submitted 16 February, 2011; v1 submitted 2 September, 2010; originally announced September 2010.

Comments: 4.3 Pages, 4 Figures

Journal ref: Physical Review B 83, 081307(R) (2011)

Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures

Authors: Lucia Steinke, Patrick Cantwell, Eric Stach, Dieter Schuh, Anna Fontcuberta i Morral, Max Bichler, Gerhard Abstreiter, Matthew Grayson

Abstract: The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a tilted magnetic field both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of two c… ▽ More The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a tilted magnetic field both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of two coupled counter-propagating quantum Hall edges and an additional one-dimensional accumulation wire. A subsystems model is introduced, whereby the total hybrid dispersion and wavefunctions are explained in terms of the constituent QH edge- and accumulation wire-subsystem dispersions and wavefunctions. At low magnetic fields, orthonormal basis wavefunctions of the hybrid system can be accurately estimated by projecting out the lowest bound state of the accumulation wire from the edge state wavefunctions. At high magnetic fields, the coupling between the three subsystems increases as a function of the applied magnetic field, in contrast to coplanar barrier-junctions of QH systems, leading to large anticrossing gaps between the subsystem dispersions. These results are discussed in terms of previously reported experimental data on bent quantum Hall systems. △ Less

Submitted 16 August, 2010; originally announced August 2010.

Comments: 11 pages, 8 figures

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Authors: Benedikt Bauer, Andreas Rudolph, Marcello Soda, Anna Fontcuberta i Morral, Josef Zweck, Dieter Schuh, Elisabeth Reiger

Abstract: GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 \mum. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal c… ▽ More GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 \mum. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth. △ Less

Submitted 20 August, 2010; v1 submitted 21 June, 2010; originally announced June 2010.

Comments: 9 pages, 4 figures

Journal ref: Nanotechnology 21 (2010) 435601

Spatially resolved ultrafast transport current in GaAs photoswitches

Authors: L. Prechtel, S. Manus, D. Schuh, W. Wegscheider, A. W. Holleitner

Abstract: We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport c… ▽ More We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of a collective electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches. △ Less

Submitted 11 May, 2010; originally announced May 2010.

Comments: 10 pages, 3 figures

Long exciton spin memory in coupled quantum wells

Authors: Katarzyna Kowalik-Seidl, Xaver P. Vögele, Bernhard N. Rimpfl, Stephan Manus, Dieter Schuh, Werner Wegscheider, Alexander W. Holleitner, Jörg P. Kotthaus

Abstract: Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, de… ▽ More Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pum** laser pulse, demonstrating directly a very long relaxation time of exciton spin. The observed spin memory effect exceeds the radiative lifetime of the indirect excitons. △ Less

Submitted 16 July, 2010; v1 submitted 1 April, 2010; originally announced April 2010.

Comments: 4 pages, 2 figures

Journal ref: Appl. Phys. Lett. 97, 011104 (2010)

Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

Authors: C. Rossler, T. Feil, P. Mensch, T. Ihn, K. Ensslin, D. Schuh, W. Wegscheider

Abstract: We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge r… ▽ More We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the do** layers and is relevant for the design of future gateable high-mobility electron gases. △ Less

Submitted 18 February, 2010; originally announced February 2010.

Journal ref: New Journal of Physics 12 (2010) 043007

Electron spin relaxation in bulk GaAs for do** densities close to the metal-to-insulator transition

Authors: M. Römer, H. Bernien, G. Müller, D. Schuh, J. Hübner, M. Oestreich

Abstract: We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for do** concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confir… ▽ More We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for do** concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-insulator-transition shows the longest spin relaxation time at low temperatures, a clear crossing of the spin relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin relaxation time above 70 K. △ Less

Submitted 20 November, 2009; originally announced November 2009.

Comments: 6 pages, 4 figures

Cyclotron effect on coherent spin precession of two-dimensional electrons

Authors: M. Griesbeck, M. M. Glazov, T. Korn, E. Ya. Sherman, D. Waller, C. Reichl, D. Schuh, W. Wegscheider, C. Schüller

Abstract: We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the $(001)$-grown structures without external magnetic fields, we observe coherent oscillations of the electron spin polarization about the effective spin-orbit field. In n… ▽ More We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the $(001)$-grown structures without external magnetic fields, we observe coherent oscillations of the electron spin polarization about the effective spin-orbit field. In non-quantizing magnetic fields applied normal to the sample plane, the cyclotron motion of the electrons rotates the effective spin-orbit field. This rotation leads to fast oscillations in the spin polarization about a non-zero value and a strong increase in the spin dephasing time in our experiments. These two effects are absent in the $(110)$-grown structure due to the different symmetry of its effective spin-orbit field. The measurements are in excellent agreement with our theoretical model. △ Less

Submitted 15 October, 2009; originally announced October 2009.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 80, 241314(R) (2009)

Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures

Authors: T. Korn, M. Kugler, M. Griesbeck, R. Schulz, A. Wagner, M. Kubová, C. Gerl, D. Schuh, W. Wegscheider, C. Schüller

Abstract: For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system. Recently, hole spins in III-V-based quantum dots were discussed as alternatives to electron spins, since the hole spin, in contrast to the electron spin, is not affec… ▽ More For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system. Recently, hole spins in III-V-based quantum dots were discussed as alternatives to electron spins, since the hole spin, in contrast to the electron spin, is not affected by contact hyperfine interaction with the nuclear spins. Here, we report a breakthrough in the spin coherence times of hole ensembles, confined in so called natural quantum dots, in narrow GaAs/AlGaAs quantum wells at temperatures below 500 mK. Consistently, time-resolved Faraday rotation and resonant spin amplification techniques deliver hole-spin coherence times, which approach in the low magnetic field limit values above 70 ns. The optical initialisation of the hole spin polarisation, as well as the interconnected electron and hole spin dynamics in our samples are well reproduced using a rate equation model. △ Less

Submitted 12 February, 2010; v1 submitted 21 September, 2009; originally announced September 2009.

Comments: 16 pages, 6 figures

Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Authors: Andreas Einwanger, Mariusz Ciorga, Ursula Wurstbauer, Dieter Schuh, Werner Wegscheider, Dieter Weiss

Abstract: We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotr… ▽ More We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of $~8%$ in case of spins oriented either along $[1\bar{1}0]$ or $[110]$ directions and $~25%$ anisotropy between in-plane and perpendicular-to-plane orientation of spins. △ Less

Submitted 7 July, 2009; originally announced July 2009.

Comments: 9 pages, 3 figures

Confluence of resonant laser excitation and bi-directional quantum dot nuclear spin polarization

Authors: C. Latta, A. Högele, Y. Zhao, A. N. Vamivakas, P. Maletinsky, M. Kroner, J. Dreiser, I. Carusotto, A. Badolato, D. Schuh, W. Wegscheider, M. Atature, A. Imamoglu

Abstract: Resonant laser scattering along with photon correlation measurements have established the atom-like character of quantum dots. Here, we present measurements which challenge this identification for a wide range of experimental parameters: the absorption lineshapes that we measure at magnetic fields exceeding 1 Tesla indicate that the nuclear spins polarize by an amount that ensures locking of the… ▽ More Resonant laser scattering along with photon correlation measurements have established the atom-like character of quantum dots. Here, we present measurements which challenge this identification for a wide range of experimental parameters: the absorption lineshapes that we measure at magnetic fields exceeding 1 Tesla indicate that the nuclear spins polarize by an amount that ensures locking of the quantum dot resonances to the incident laser frequency. In contrast to earlier experiments, this nuclear spin polarization is bi-directional, allowing the electron+nuclear spin system to track the changes in laser frequency dynamically on both sides of the quantum dot resonance. Our measurements reveal that the confluence of the laser excitation and nuclear spin polarization suppresses the fluctuations in the resonant absorption signal. A master equation analysis shows narrowing of the nuclear Overhauser field variance, pointing to potential applications in quantum information processing. △ Less

Submitted 30 April, 2009; originally announced April 2009.

Gate control of low-temperature spin dynamics in two-dimensional hole systems

Authors: M. Kugler, T. Andlauer, T. Korn, A. Wagner, S. Fehringer, R. Schulz, M. Kubová, C. Gerl, D. Schuh, W. Wegscheider, P. Vogl, C. Schüller

Abstract: We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole spin dynamics that are strongly temperature dependen… ▽ More We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole spin dynamics that are strongly temperature dependent, indicating that in-plane localization is crucial for hole spin coherence. By applying a gate voltage, we are able to tune the observed hole g factor by more than 50 percent. Calculations of the hole g tensor as a function of the applied bias show excellent agreement with our experimental findings. △ Less

Submitted 1 July, 2009; v1 submitted 27 April, 2009; originally announced April 2009.

Comments: 8 pages, 7 figures

Transport through (Ga,Mn)As nanoislands: Coulomb-blockade and temperature dependence of the conductance

Authors: Markus Schlapps, Teresa Lermer, Stefan Geissler, Daniel Neumaier, Janusz Sadowski, Dieter Schuh, Werner Wegscheider, Dieter Weiss

Abstract: We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanatio… ▽ More We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb-blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction. △ Less

Submitted 14 September, 2009; v1 submitted 21 April, 2009; originally announced April 2009.

Comments: 5 pages, 3 figures, completed affiliations and corrected typos

Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

Authors: M. Wimmer, M. Lobenhofer, J. Moser, A. Matos-Abiague, D. Schuh, W. Wegscheider, J. Fabian, K. Richter, D. Weiss

Abstract: We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with… ▽ More We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry. △ Less

Submitted 20 April, 2009; originally announced April 2009.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 80, 121301(R) (2009)

Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures

Authors: P. Olbrich, J. Allerdings, V. V. Bel'kov, S. A. Tarasenko, D. Schuh, W. Wegscheider, T. Korn, C. Schüller, D. Weiss, S. D. Ganichev

Abstract: We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well… ▽ More We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-do** layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin relaxation time is maximal, therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs. △ Less

Submitted 21 March, 2009; originally announced March 2009.

Comments: 11 pages, 12 figures

Tuning of structure inversion asymmetry by the $δ$-do** position in (001)-grown GaAs quantum wells

Authors: V. Lechner, L. E. Golub, P. Olbrich, S. Stachel, D. Schuh, W. Wegscheider, V. V. Bel'kov, S. D. Ganichev

Abstract: Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-do** layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tunin… ▽ More Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-do** layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-do** position we grow samples with almost equal degrees of structure and bulk inversion asymmetry. △ Less

Submitted 6 March, 2009; originally announced March 2009.

Comments: 4 pages 2 figures

Density Enhanced Diffusion of Dipolar Excitons within a One-Dimensional Channel

Authors: X. P. Vogele, D. Schuh, W. Wegscheider, J. P. Kotthaus, A. W. Holleitner

Abstract: We experimentally investigate the lateral diffusion of dipolar excitons in coupled quantum wells in two (2D) and one (1D) dimensions. In 2D, the exciton expansion obeys non-linear temporal dynamics due to the repulsive dipole pressure at a high exciton density, in accordance with recent reports. In contrast, the observed 1D expansion behaves linearly in time even at high exciton densities. The c… ▽ More We experimentally investigate the lateral diffusion of dipolar excitons in coupled quantum wells in two (2D) and one (1D) dimensions. In 2D, the exciton expansion obeys non-linear temporal dynamics due to the repulsive dipole pressure at a high exciton density, in accordance with recent reports. In contrast, the observed 1D expansion behaves linearly in time even at high exciton densities. The corresponding 1D diffusion coefficient exceeds the one in 2D by far and depends linearly on the exciton density. We attribute the findings to screening of quantum well disorder by the dipolar excitons. △ Less

Submitted 30 January, 2009; originally announced January 2009.

Comments: 4 pages, 4 figures

Spin dynamics in high-mobility two-dimensional electron systems

Authors: Tobias Korn, Dominik Stich, Robert Schulz, Dieter Schuh, Werner Wegscheider, Christian Schüller

Abstract: Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of spin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-of-plane… ▽ More Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of spin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-of-plane magnetic field and thus reduces the spin-flip rate. By time-resolved Faraday rotation (TRFR) techniques, we demonstrate that the spin lifetime is increased by an order of magnitude as the initial spin polarization degree is raised from the low-polarization limit to several percent. We perform control experiments to decouple the excitation density in the sample from the spin polarization degree and investigate the interplay of the internal HF field and an external perpendicular magnetic field. The lifetime of spins oriented in the plane of a [001]-grown 2DES is strongly anisotropic if the Rashba and Dresselhaus spin-orbit fields are of the same order of magnitude. This anisotropy, which stems from the interference of the Rashba and the Dresselhaus spin-orbit fields, is highly density-dependent: as the electron density is increased, the kubic Dresselhaus term becomes dominant and reduces the anisotropy. △ Less

Submitted 5 November, 2008; originally announced November 2008.

Comments: 13 pages, 6 figures

Photoconductive gain in semiconductor quantum wires

Authors: K. -D. Hof, C. Rossler, S. Manus, J. P. Kotthaus, A. W. Holleitner, D. Schuh, W. Wegscheider

Abstract: We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which sh… ▽ More We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin. △ Less

Submitted 6 October, 2008; originally announced October 2008.

Manganese-diffusion-induced n-do** in semiconductor structures containing Ga(Mn)As layers

Authors: T. Korn, R. Schulz, S. Fehringer, U. Wurstbauer, D. Schuh, W. Wegscheider, M. W. Wu, C. Schüller

Abstract: Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there… ▽ More Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type do** within the QW, and, in addition, strongly increases the electron spin dephasing time. △ Less

Submitted 12 November, 2008; v1 submitted 22 September, 2008; originally announced September 2008.

Comments: 4 pages, 4 figures

Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics

Authors: Georg M. Müller, Michael Römer, Dieter Schuh, Werner Wegscheider, Jens Hübner, Michael Oestreich

Abstract: In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low temperature electron spin relaxation time of n-doped GaAs (110) quantum wells and to the corresponding low temperature anisotropic spin relaxation. The Brownian mot… ▽ More In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low temperature electron spin relaxation time of n-doped GaAs (110) quantum wells and to the corresponding low temperature anisotropic spin relaxation. The Brownian motion of the electrons within the spin noise probe laser spot becomes manifest in a modification of the spin noise line width. Thereby, the spatially resolved observation of the stochastic spin polarization uniquely allows to study electron dynamics at equilibrium conditions with a vanishing total momentum of the electron system. △ Less

Submitted 19 September, 2008; originally announced September 2008.

Journal ref: Phys. Rev. Lett. 101 (2008) 206601

Electrical spin injection and detection in lateral all-semiconductor devices

Authors: Mariusz Ciorga, Andreas Einwanger, Ursula Wurstbauer, Dieter Schuh, Werner Wegscheider, Dieter Weiss

Abstract: Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-… ▽ More Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the relatively high value of 50%. △ Less

Submitted 10 September, 2008; originally announced September 2008.

Comments: 11 pages, 3 figures, sent to PRL

Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires

Authors: K. -D. Hof, C. Rossler, S. Manus, J. P. Kotthaus, A. W. Holleitner, D. Schuh, W. Wegscheider

Abstract: We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well whic… ▽ More We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes. △ Less

Submitted 6 June, 2008; originally announced June 2008.

Optically induced transport properties of freely suspended semiconductor submicron channels

Authors: C. Rossler, K. -D. Hof, S. Manus, S. Ludwig, J. P. Kotthaus, J. Simon, A. W. Holleitner, D. Schuh, W. Wegscheider

Abstract: We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a ti… ▽ More We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds. △ Less

Submitted 15 May, 2008; originally announced May 2008.

Journal ref: Appl. Phys. Lett. 93, 071107 (2008)

Hop** conduction in strongly insulating states of a diffusive bent quantum Hall junction

Authors: L. Steinke, D. Schuh, M. Bichler, G. Abstreiter, M. Grayson

Abstract: Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor… ▽ More Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hop** at higher T to variable-range hop** conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hop** conduction. We observe almost identical behavior at filling factors 1 and 2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hop** which either include or ignore interactions are compared, all of which are consistent with the basic model of disorder coupled counter-propagating quantum Hall edges. △ Less

Submitted 14 July, 2008; v1 submitted 29 February, 2008; originally announced February 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 77, 235319 (2008)

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Authors: C Rossler, M Bichler, D Schuh, W Wegscheider, S Ludwig

Abstract: Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investi… ▽ More Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon-interaction. △ Less

Submitted 29 February, 2008; originally announced February 2008.

Journal ref: Nanotechnology 19, 16 (2008)

Symmetry and spin dephasing in (110)-grown quantum wells

Authors: V. V. Bel'kov, P. Olbrich, S. A. Tarasenko, D. Schuh, W. Wegscheider, T. Korn, Ch. Schüller, D. Weiss, W. Prettl, S. D. Ganichev

Abstract: Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in… ▽ More Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-do** layer position. △ Less

Submitted 11 December, 2007; originally announced December 2007.

Comments: 4 pages, 4 figures

All-electric detectors of the polarization state of terahertz laser radiation (extended version)

Authors: S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, D. Schuh, W. Wegscheider, Ch. Gerl, W. Prettl, D. Bougeard, G. Abstreiter

Abstract: Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The ph… ▽ More Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have sub-nanosecond time constants at room temperature making a high time resolution of the polarization detectors possible. △ Less

Submitted 6 May, 2008; v1 submitted 28 September, 2007; originally announced September 2007.