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Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications
Authors:
T. Luo,
L. Lindner,
J. Langer,
V. Cimalla,
F. Hahl,
C. Schreyvogel,
S. Onoda,
S. Ishii,
T. Ohshima,
D. Wang,
D. A. Simpson,
B. C. Johnson,
M. Capelli,
R. Blinder,
J. Jeske
Abstract:
The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV$^-$ concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth an…
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The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV$^-$ concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over 4 orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2-20 parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin-spin coherence times T$_2$ ranging from 45.5 to 549 $μ$s for CVD diamonds containing 168 to 1 parts per billion NV$^-$ centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.
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Submitted 15 November, 2021;
originally announced November 2021.
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Quality assessment of in situ plasma etched diamond surfaces for CVD overgrowth
Authors:
J. Langer,
V. Cimalla,
M. Prescher,
J. Ligl,
B. Tegetmeyer,
C. Schreyvogel,
O. Ambacher
Abstract:
In situ plasma etching is a common method to prepare diamond substrates for epitaxial overgrowth to effectuate higher quality. However, there is no practical, direct, qualitative method established so far to assess the performance of the etching pretreatment. We propose an optimization of the pretreatment process on grounds of high-resolution X-ray diffraction measurements to judge the structural…
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In situ plasma etching is a common method to prepare diamond substrates for epitaxial overgrowth to effectuate higher quality. However, there is no practical, direct, qualitative method established so far to assess the performance of the etching pretreatment. We propose an optimization of the pretreatment process on grounds of high-resolution X-ray diffraction measurements to judge the structural quality gain of the diamond substrates and the effectiveness of the polishing-induced subsurface damage removal. The obtained data shows, that parameters like thickness nor misorientation angle of the diamond substrates seem to influence the gain of the structural quality. The process duration, however, is an important key factor, when the amount of material removal and the arising roughness are discussed. Furthermore, the impact of the oxygen-to-hydrogen ratio is examined. And with rising oxygen percentage, the structural quality gain remains similar, only the overall as well as local mean roughness increases exponentially. Within the utilized reactor setup, the best results are obtained after a 20-minute in situ hydrogen plasma-etching step. The optimal pretreatment process, however, will always embody a tradeoff and needs to be optimized for each reactor type. Due to the introduced method a better evaluation and comparison of the achievements is accomplishable.
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Submitted 19 January, 2021;
originally announced January 2021.
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Microstructural and Optical Emission Properties of Diamond Multiply Twinned Particles
Authors:
Vadim Lebedev,
Taro Yoshikawa,
Christoph Schreyvogel,
Lutz Kirste,
Jürgen Weippert,
Michael Kunzer,
Andreas Graff,
Oliver Ambacher
Abstract:
Multiply twinned particles, MTPs, are fascinating crystallographic entities with a number of controllable properties originating from their symmetry and cyclic structure. In the focus of our studies are diamond MTPs hosting optically active defects, objects demonstrating a high application potential for emerging optoelectronic and quantum devices. In this work, we discuss the growth mechanisms alo…
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Multiply twinned particles, MTPs, are fascinating crystallographic entities with a number of controllable properties originating from their symmetry and cyclic structure. In the focus of our studies are diamond MTPs hosting optically active defects, objects demonstrating a high application potential for emerging optoelectronic and quantum devices. In this work, we discuss the growth mechanisms along with the microstructural and optical properties of the MTPs aggregating high-density of silicon-vacancy complexes on the specific crystal irregularities. It is demonstrated that the silicon impurities incite a rapid growth of MTPs via intensive formation of penetration twins on 100 facets of regular octahedral grains. We also show that the zero-phonon-line emission from the Si color centers embedded in the twin boundaries dominates in photo- and electroluminescence spectra of the MTP-based light-emitting devices defining their steady-state optical properties.
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Submitted 28 April, 2020;
originally announced April 2020.
