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Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Authors:
Jan Klos,
Jan Tröger,
Jens Keutgen,
Merritt P. Losert,
Helge Riemann,
Nikolay V. Abrosimov,
Joachim Knoch,
Hartmut Bracht,
Susan N. Coppersmith,
Mark Friesen,
Oana Cojocaru-Mirédin,
Lars R. Schreiber,
Dominique Bougeard
Abstract:
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing…
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Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.
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Submitted 30 May, 2024;
originally announced May 2024.
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Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
Authors:
Merritt P. Losert,
Max Oberländer,
Julian D. Teske,
Mats Volmer,
Lars R. Schreiber,
Hendrik Bluhm,
S. N. Coppersmith,
Mark Friesen
Abstract:
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with va…
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Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with valley splitting dominated by alloy disorder, one can expect to encounter pockets of low valley splitting, given a long-enough shuttling path. At such locations, inter-valley tunneling leads to dephasing of the spin wavefunction, substantially reducing the shuttling fidelity. We show how to mitigate this problem by modifying the heterostructure composition, or by varying the vertical electric field, the shuttling velocity, the shape and size of the dot, or the shuttling path. We further show that combinations of these strategies can reduce the shuttling infidelity by several orders of magnitude, putting shuttling fidelities sufficient for error correction within reach.
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Submitted 23 May, 2024; v1 submitted 2 May, 2024;
originally announced May 2024.
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Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots
Authors:
Julian Ferrero,
Thomas Koch,
Sonja Vogel,
Daniel Schroller,
Viktor Adam,
Ran Xue,
Inga Seidler,
Lars R. Schreiber,
Hendrik Bluhm,
Wolfgang Wernsdorfer
Abstract:
Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the c…
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Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 micro Hertz to 10 milli Hertz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger-Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions.
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Submitted 8 May, 2024; v1 submitted 30 April, 2024;
originally announced May 2024.
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Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
Authors:
Florian Ginzel,
Michael Fellner,
Christian Ertler,
Lars R. Schreiber,
Hendrik Bluhm,
Wolfgang Lechner
Abstract:
Motivated by the prospect of a two-dimensional square-lattice geometry for semiconductor spin qubits, we explore the realization of the Parity Architecture with quantum dots (QDs). This is part of the endeavor of develo** architectures that advance the utilization of spin qubits for quantum computing while harnessing their advantages, such as their fast timescales -- especially of the nearest-ne…
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Motivated by the prospect of a two-dimensional square-lattice geometry for semiconductor spin qubits, we explore the realization of the Parity Architecture with quantum dots (QDs). This is part of the endeavor of develo** architectures that advance the utilization of spin qubits for quantum computing while harnessing their advantages, such as their fast timescales -- especially of the nearest-neighbor interaction -- and small size. We present sequences of spin shuttling and quantum gates that implement the Parity Quantum Approximate Optimization Algorithm (QAOA) on a lattice constructed of identical unit cells, where the circuit depth is independent of the problem Hamiltonian and the system size. We further develop an error model, including a general description of the shuttling errors as a function of the probability distribution function of the valley splitting, and estimate the errors during one round of Parity QAOA, which is mainly limited by the valley splitting. Finally, we discuss the possibility of decoding the logical quantum state and of quantum error mitigation. We find that already with near-term spin qubit devices a sufficiently low physical error probability can be expected to reliably perform Parity QAOA with a short depth in a regime where the success probability compares favorably to standard QAOA.
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Submitted 14 March, 2024;
originally announced March 2024.
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Map** of valley-splitting by conveyor-mode spin-coherent electron shuttling
Authors:
Mats Volmer,
Tom Struck,
Arnau Sala,
Bingjie Chen,
Max Oberländer,
Tobias Offermann,
Ran Xue,
Lino Visser,
Jhih-Sian Tu,
Stefan Trellenkamp,
Łukasz Cywiński,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method fo…
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In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method for two-dimensional map** of the local valley splitting by detecting magnetic field dependent anticrossings of ground and excited valley states using entangled electron spin-pairs as a probe. The method has sub-μeV energy accuracy and a nanometer lateral resolution. The histogram of valley splittings spanning a large area of 210 nm by 18 nm matches well with statistics obtained by the established but time-consuming magnetospectroscopy method. For the specific heterostructure, we find a nearly Gaussian distribution of valley splittings and a correlation length similar to the quantum dot size. Our map** method may become a valuable tool for engineering Si/SiGe heterostructures for scalable quantum computing.
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Submitted 29 December, 2023;
originally announced December 2023.
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Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Authors:
Malte Neul,
Isabelle V. Sprave,
Laura K. Diebel,
Lukas G. Zinkl,
Florian Fuchs,
Yuji Yamamoto,
Christian Vedder,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructu…
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Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures.
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Submitted 11 December, 2023;
originally announced December 2023.
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Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
Authors:
Tom Struck,
Mats Volmer,
Lino Visser,
Tobias Offermann,
Ran Xue,
Jhih-Sian Tu,
Stefan Trellenkamp,
Łukasz Cywiński,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttl…
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Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7 % for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 $μ$m, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.
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Submitted 10 July, 2023;
originally announced July 2023.
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Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
Authors:
Ran Xue,
Max Beer,
Inga Seidler,
Simon Humpohl,
Jhih-Sian Tu,
Stefan Trellenkamp,
Tom Struck,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We…
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The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrmμ$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.
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Submitted 28 June, 2023;
originally announced June 2023.
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The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling
Authors:
Matthias Künne,
Alexander Willmes,
Max Oberländer,
Christian Gorjaew,
Julian D. Teske,
Harsh Bhardwaj,
Max Beer,
Eugen Kammerloher,
René Otten,
Inga Seidler,
Ran Xue,
Lars R. Schreiber,
Hendrik Bluhm
Abstract:
Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduc…
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Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduce the SpinBus architecture, which uses electron shuttling to connect qubits and features low operating frequencies and enhanced qubit coherence. Device simulations for all relevant operations in the Si/SiGe platform validate the feasibility with established semiconductor patterning technology and operation fidelities exceeding 99.9 %. Control using room temperature instruments can plausibly support at least 144 qubits, but much larger numbers are conceivable with cryogenic control circuits. Building on the theoretical feasibility of high-fidelity spin-coherent electron shuttling as key enabling factor, the SpinBus architecture may be the basis for a spin-based quantum processor that meets the scalability requirements for practical quantum computing.
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Submitted 28 June, 2023;
originally announced June 2023.
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Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
Authors:
C. Corley-Wiciak,
M. H. Zoellner,
I. Zaitsev,
K. Anand,
E. Zatterin,
Y. Yamamoto,
A. A. Corley-Wiciak,
F. Reichmann,
W. Langheinrich,
L. R. Schreiber,
C. L. Manganelli,
M. Virgilio,
C. Richter,
G. Capellini
Abstract:
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-in…
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The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations of the strain tensor components in the range of $2 - 8 \times 10^{-4}$ with ~60 nm lateral resolution. We have evaluated that these strain fluctuations are reflected into local modulations of the potential of the conduction band minimum larger than 2 meV, which is close to the orbital energy of an electrostatic quantum dot. We observe that the sign of the strain modulations at a given depth of the quantum well layer depends on the lateral dimensions of the electrodes. Since our work explores the impact of device geometry on the strain-induced energy landscape, it enables further optimization of the design of scaled CMOS-processed quantum devices.
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Submitted 18 April, 2023;
originally announced April 2023.
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Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
Authors:
Inga Seidler,
Malte Neul,
Eugen Kammerloher,
Matthias Künne,
Andreas Schmidbauer,
Laura Diebel,
Arne Ludwig,
Julian Ritzmann,
Andreas D. Wieck,
Dominique Bougeard,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for elect…
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Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for electrostatically modelling new spin qubit device layouts, considering gate voltages, heterostructures, reservoirs and an applied source-drain bias. Exemplified by a specific potential, we study the influence of each parameter. We verify our model by indirectly probing the potential landscape of two design implementations through transport measurements. We use the simulations to identify critical design areas and optimize for robustness with regard to influence and resolution limits of the fabrication process.
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Submitted 23 March, 2023;
originally announced March 2023.
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Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO$_2$
Authors:
Veit Langrock,
Jan A. Krzywda,
Niels Focke,
Inga Seidler,
Lars R. Schreiber,
Łukasz Cywiński
Abstract:
Silicon spin qubits stand out due to their very long coherence times, compatibility with industrial fabrication, and prospect to integrate classical control electronics. To achieve a truly scalable architecture, a coherent mid-range link that moves the electrons between qubit registers has been suggested to solve the signal fan-out problem. Here, we present a blueprint of such a $\approx 10\,μ$m l…
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Silicon spin qubits stand out due to their very long coherence times, compatibility with industrial fabrication, and prospect to integrate classical control electronics. To achieve a truly scalable architecture, a coherent mid-range link that moves the electrons between qubit registers has been suggested to solve the signal fan-out problem. Here, we present a blueprint of such a $\approx 10\,μ$m long link, called a spin qubit shuttle, which is based on connecting an array of gates into a small number of sets. To control these sets, only a few voltage control lines are needed and the number of these sets and thus the number of required control signals is independent of the length of this link. We discuss two different operation modes for the spin qubit shuttle: A qubit conveyor, i.e. a potential minimum that smoothly moves laterally, and a bucket brigade, in which the electron is transported through a series of tunnel-coupled quantum dots by adiabatic passage. We find the former approach more promising considering a realistic Si/SiGe device including potential disorder from the charged defects at the Si/SiO$_2$ layer, as well as typical charge noise. Focusing on the qubit transfer fidelity in the conveyor shuttling mode, we discuss in detail motional narrowing, the interplay between orbital and valley excitation and relaxation in presence of $g$-factors that depend on orbital and valley state of the electron, and effects from spin-hotspots. We find that a transfer fidelity of 99.9 \% is feasible in Si/SiGe at a speed of $\sim$10 m/s, if the average valley splitting and its inhomogeneity stay within realistic bounds. Operation at low global magnetic field $\approx 20$ mT and material engineering towards high valley splitting is favourable for reaching high fidelities of transfer.
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Submitted 12 April, 2023; v1 submitted 23 February, 2022;
originally announced February 2022.
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Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
Authors:
L. R. Schreiber,
C. Schwark,
G. Güntherodt,
M. Lepsa,
C. Adelmann,
C. J. Palmstrøm,
X. Lou,
P. A. Crowell,
B. Beschoten
Abstract:
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin…
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The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into $n$-GaAs. By means of time-resolved Faraday rotation, we demonstrate phase coherence by the observation of multiple Larmor precession cycles for current pulse widths down to 500 ps at 17 K. We show that the current pulses are broadened by the charging and discharging time of the Schottky barrier. At high frequencies, the observable spin coherence is limited only by the finite band width of the current pulses, which is on the order of 2 GHz. These results therefore demonstrate that all-electrical injection and phase control of electron spin packets at microwave frequencies is possible in metallic-ferromagnet/semiconductor heterostructures.
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Submitted 17 November, 2021;
originally announced November 2021.
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Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
Authors:
Inga Seidler,
Tom Struck,
Ran Xue,
Niels Focke,
Stefan Trellenkamp,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single el…
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Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single electron by a propagating wave-potential in an electrostatically defined 420 nm long Si/SiGe quantum-channel. This conveyor-mode shuttling approach requires independent from its length only four sinusoidal control signals. We discuss the tuning of the signal parameters, detect the smoothness of the electron motion enabling the map** of potential disorder and observe a high single-electron shuttling fidelity of $99.42\pm0.02\,\%$ including a reversal of direction. Our shuttling device can be readily embedded in industrial fabrication of Si/SiGe qubit chips and paves the way to solving the signal-fanout problem for a fully scalable semiconductor quantum-computing architecture.
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Submitted 2 August, 2021;
originally announced August 2021.
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Sensing dot with high output swing for scalable baseband readout of spin qubits
Authors:
Eugen Kammerloher,
Andreas Schmidbauer,
Laura Diebel,
Inga Seidler,
Malte Neul,
Matthias Künne,
Arne Ludwig,
Julian Ritzmann,
Andreas Wieck,
Dominique Bougeard,
Lars R. Schreiber,
Hendrik Bluhm
Abstract:
A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significant…
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A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significantly improved response compared to conventional charge sensing dots. Our ASD design features a strongly decoupled drain reservoir from the sensor dot, which mitigates negative feedback effects found in conventional sensors. This results in a boosted output swing of $3\,\text{mV}$, which exceeds the response in the conventional regime of our device by more than ten times. The enhanced output signal paves the way for employing very low-power readout amplifiers in close proximity to the qubit.
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Submitted 4 May, 2023; v1 submitted 28 July, 2021;
originally announced July 2021.
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Robust and fast post-processing of single-shot spin qubit detection events with a neural network
Authors:
Tom Struck,
Javed Lindner,
Arne Hollmann,
Floyd Schauer,
Andreas Schmidbauer,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
Establishing low-error and fast detection methods for qubit readout is crucial for efficient quantum error correction. Here, we test neural networks to classify a collection of single-shot spin detection events, which are the readout signal of our qubit measurements. This readout signal contains a stochastic peak, for which a Bayesian inference filter including Gaussian noise is theoretically opti…
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Establishing low-error and fast detection methods for qubit readout is crucial for efficient quantum error correction. Here, we test neural networks to classify a collection of single-shot spin detection events, which are the readout signal of our qubit measurements. This readout signal contains a stochastic peak, for which a Bayesian inference filter including Gaussian noise is theoretically optimal. Hence, we benchmark our neural networks trained by various strategies versus this latter algorithm. Training of the network with 10$^{6}$ experimentally recorded single-shot readout traces does not improve the post-processing performance. A network trained by synthetically generated measurement traces performs similar in terms of the detection error and the post-processing speed compared to the Bayesian inference filter. This neural network turns out to be more robust to fluctuations in the signal offset, length and delay as well as in the signal-to-noise ratio. Notably, we find an increase of 7 % in the visibility of the Rabi-oscillation when we employ a network trained by synthetic readout traces combined with measured signal noise of our setup. Our contribution thus represents an example of the beneficial role which software and hardware implementation of neural networks may play in scalable spin qubit processor architectures.
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Submitted 22 March, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation
Authors:
Frank Volmer,
Inga Seidler,
Timo Bisswanger,
Jhih-Sian Tu,
Lars R. Schreiber,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in mo…
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We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms towards the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro- and nanostructures in an e-beam lithography process. After the metal deposition, the cross-linked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which e.g. includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber.
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Submitted 15 February, 2021; v1 submitted 13 October, 2020;
originally announced October 2020.
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Low-frequency spin qubit detuning noise in highly purified $^{28}$Si/SiGe
Authors:
Tom Struck,
Arne Hollmann,
Floyd Schauer,
Olexiy Fedorets,
Andreas Schmidbauer,
Kentarou Sawano,
Helge Riemann,
Nikolay V. Abrosimov,
Łukasz Cywiński,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin e…
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The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin echo decay time $T_2^{\text{echo}}=128\,μ$s. The power spectral density (PSD) of the charge noise explains both the observed transition of a $1/f^2$- to a $1/f$-dependence of the detuning noise PSD as well as the observation of a decreasing time-ensemble spin dephasing time from $T_2^* \approx 20\,μ$s with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few $^{73}$Ge nuclei overlap** with the quantum dot in the barrier do not limit $T_2^*$, as their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field is the key to further improve the qubit fidelity.
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Submitted 25 September, 2019;
originally announced September 2019.
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Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot
Authors:
Arne Hollmann,
Tom Struck,
Veit Langrock,
Andreas Schmidbauer,
Floyd Schauer,
Tim Leonhardt,
Kentarou Sawano,
Helge Riemann,
Nikolay V. Abrosimov,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown…
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Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.
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Submitted 30 March, 2020; v1 submitted 9 July, 2019;
originally announced July 2019.
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Transfer of a quantum state from a photonic qubit to a gate-defined quantum dot
Authors:
Benjamin Joecker,
Pascal Cerfontaine,
Federica Haupt,
Lars R. Schreiber,
Beata E. Kardynał,
Hendrik Bluhm
Abstract:
Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized ex…
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Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized exciton as intermediary between the photonic and the spin qubit. We use effective Hamiltonian models to describe the hybrid systems formed by the the exciton and the GDQDs and apply simple but realistic noise models to analyze the viability of the proposed protocols. Using realistic parameters, we find that the protocols can be completed with a success probability ranging between 85-97%.
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Submitted 16 December, 2018;
originally announced December 2018.
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Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems
Authors:
Jan Klos,
Fabian Hassler,
Pascal Cerfontaine,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detecto…
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Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detectors. Potential disorder and the increasing complexity of the two-dimensional gate-defined quantum computing devices sets high demands on the gate design and the voltage tuning of the tunnel barriers. We present a Green's formalism approach for the calculation of tunnel-couplings between a quantum dot and a reservoir. Our method takes into account in full detail the two-dimensional electrostatic potential of the quantum dot, the tunnel barrier and reservoir. A Markov approximation is only employed far away from the tunnel barrier region where the density of states is sufficiently large. We calculate the tunnel-coupling including potential disorder effects, which become increasingly important for large-scale silicon-based spin-qubit devices. Studying the tunnel-couplings of a single-electron transistor in Si/SiGe as a showcase, we find that charged defects are the dominant source of disorder leading to variations in the tunnel-coupling of four orders of magnitude.
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Submitted 4 May, 2018;
originally announced May 2018.
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30 GHz-voltage controlled oscillator operating at 4 K
Authors:
Arne Hollmann,
Daniel Jirovec,
Maciej Kucharski,
Dietmar Kissinger,
Gunter Fischer,
Lars R. Schreiber
Abstract:
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here,…
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Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator. The device maintains its functionality from 300 K to 4 K. We determined the dependence of frequency and output power on temperature and magnetic field up to 5 T and measured the temperature influence on noise performance. While the output power tends to increase, the frequency shift is 3 % for temperature and 0.02 % for the field dependence, respectively, both relevant for highly coherent spin qubit applications. We observe no improvement on output noise, but increased output flickering.
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Submitted 25 April, 2018;
originally announced April 2018.
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Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
Authors:
L. M. K. Vandersypen,
H. Bluhm,
J. S. Clarke,
A. S. Dzurak,
R. Ishihara,
A. Morello,
D. J. Reilly,
L. R. Schreiber,
M. Veldhorst
Abstract:
Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circ…
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Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual DC, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long spin coherence times, and the rich options for integration with classical electronics based on the same technology.
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Submitted 18 December, 2016;
originally announced December 2016.
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Dynamics of spin-flip photon-assisted tunneling
Authors:
F. R. Braakman,
J. Danon,
L. R. Schreiber,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under the present conditions. We are able to extract the resulting effective `spin-flip tunneling' energy,…
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We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under the present conditions. We are able to extract the resulting effective `spin-flip tunneling' energy, which is found to be three orders of magnitude smaller than the regular spin-conserving tunneling energy. We also measure the relaxation and dephasing times of a qubit formed out of two two-electron states with different spin and charge configurations.
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Submitted 5 January, 2014;
originally announced January 2014.
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Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna
Authors:
E. Kawakami,
P. Scarlino,
L. R. Schreiber,
J. R. Prance,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
L. M. K. Vandersypen
Abstract:
We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by h…
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We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by heating of the reservoirs.
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Submitted 10 January, 2013;
originally announced January 2013.
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Triggering and probing of phase-coherent spin packets by time-resolved spin transport across an Fe/GaAs Schottky barrier
Authors:
L. R. Schreiber,
C. Schwark,
S. Richter,
C. Weier,
G. Güntherodt,
C. Adelmann,
C. J. Palmstrom,
X. Lou,
P. A. Crowell,
B. Beschoten
Abstract:
Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin…
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Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin precession of optically created spin packets in n-GaAs can be probed electrically by spin-polarized photo-current pulses. The injection and detection experiments are not direct reciprocals of each other. In particular, we find that interfacial spin accumulation generated by the photocurrent pulse plays a critical role in time-resolved electrical spin detection.
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Submitted 19 April, 2012;
originally announced April 2012.
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Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
Authors:
J. R. Prance,
Zhan Shi,
C. B. Simmons,
D. E. Savage,
M. G. Lagally,
L. R. Schreiber,
L. M. K. Vandersypen,
Mark Friesen,
Robert Joynt,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three tripl…
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We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T.
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Submitted 2 November, 2011; v1 submitted 28 October, 2011;
originally announced October 2011.
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Coupling molecular spin states by photon-assisted tunneling
Authors:
L. R. Schreiber,
F. R. Braakman,
T. Meunier,
V. Calado,
J. Danon,
J. M. Taylor,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunneling of electrons between two coupled quantum dots triggered by microwave irradiation. So far, these tunneling processes have been treated as electric dipole-allowed spin-conserving events. Here w…
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Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunneling of electrons between two coupled quantum dots triggered by microwave irradiation. So far, these tunneling processes have been treated as electric dipole-allowed spin-conserving events. Here we report that microwaves can also excite tunneling transitions between states with different spin. In this work, the dominant mechanism responsible for violation of spin conservation is the spin-orbit interaction. These transitions make it possible to perform detailed microwave spectroscopy of the molecular spin states of an artificial hydrogen molecule and open up the possibility of realizing full quantum control of a two spin system via microwave excitation.
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Submitted 27 October, 2010;
originally announced October 2010.
