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Dark-Field X-ray Microscopy for 2D and 3D imaging of Microstructural Dynamics at the European X-ray Free Electron Laser
Authors:
Sara J. Irvine,
Kento Katagiri,
Trygve M. Ræder,
Darshan Chalise,
Dayeeta Pal,
Jade I. Stanton,
Gabriele Ansaldi,
Ulrike Boesenberg,
Felix Brauße,
Jon H. Eggert,
Lichao Fang,
Eric Folsom,
Jörg Hallmann,
Morten Haubro,
Theodor S. Holstad,
Anders Madsen,
Johannes Möller,
Martin M. Nielsen,
Henning F. Poulsen,
Jan-Etienne Pudel,
Angel Rodriguez-Fernandez,
Frank Schoofs,
Frank Seiboth,
Yifan Wang,
Jo Wonhyuk
, et al. (4 additional authors not shown)
Abstract:
Dark field X-ray microscopy (DXFM) has enabled experiments to visualize microstructural distortions in bulk crystals. Using the femtosecond X-ray pulses generated by X-ray free-electron lasers (XFEL), DFXM can achieve ~1-um spatial resolution and <100 fs time resolution simultaneously. In this paper, we present the first ultrafast DFXM measurements at the European XFEL. In this work, we demonstrat…
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Dark field X-ray microscopy (DXFM) has enabled experiments to visualize microstructural distortions in bulk crystals. Using the femtosecond X-ray pulses generated by X-ray free-electron lasers (XFEL), DFXM can achieve ~1-um spatial resolution and <100 fs time resolution simultaneously. In this paper, we present the first ultrafast DFXM measurements at the European XFEL. In this work, we demonstrate DFXM of laser-induced phonon wavepackets propagating through dislocations inside a diamond single crystal. In addition to demonstrating this new capability, we present two new DFXM scanning techniques for XFEL applications, 3D and axial-strain scans with sub-μm spatial resolution. With this progress to XFEL DFXM, we discuss new opportunities to study multi-timescale spatio-temporal dynamics of defects, strain waves, and other localized phenomena deep inside crystals.
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Submitted 7 November, 2023;
originally announced November 2023.
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Transonic Dislocation Propagation in Diamond
Authors:
Kento Katagiri,
Tatiana Pikuz,
Lichao Fang,
Bruno Albertazzi,
Shunsuke Egashira,
Yuichi Inubushi,
Genki Kamimura,
Ryosuke Kodama,
Michel Koenig,
Bernard Kozioziemski,
Gooru Masaoka,
Kohei Miyanishi,
Hirotaka Nakamura,
Masato Ota,
Gabriel Rigon,
Youichi Sakawa,
Takayoshi Sano,
Frank Schoofs,
Zoe J. Smith,
Keiichi Sueda,
Tadashi Togashi,
Tommaso Vinci,
Yifan Wang,
Makina Yabashi,
Toshinori Yabuuchi
, et al. (2 additional authors not shown)
Abstract:
The motion of line defects (dislocations) has been studied for over 60 years but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motions between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic disloc…
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The motion of line defects (dislocations) has been studied for over 60 years but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motions between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic dislocations. We use femtosecond x-ray radiography to track ultrafast dislocation motion in shock-compressed single-crystal diamond. By visualizing stacking faults extending faster than the slowest sound wave speed of diamond, we show the evidence of partial dislocations at their leading edge moving transonically. Understanding the upper limit of dislocation mobility in crystals is essential to accurately model, predict, and control the mechanical properties of materials under extreme conditions.
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Submitted 6 October, 2023; v1 submitted 7 March, 2023;
originally announced March 2023.
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Simultaneous Bright- and Dark-Field X-ray Microscopy at X-ray Free Electron Lasers
Authors:
Leora E. Dresselhaus-Marais,
Bernard Kozioziemski,
Theodor S. Holstad,
Trygve Magnus Ræder,
Matthew Seaberg,
Daewoong Nam,
Sangsoo Kim,
Sean Breckling,
Seonghyuk Choi,
Matthieu Chollet,
Philip K. Cook,
Eric Folsom,
Eric Galtier,
Arnulfo Gonzalez,
Tais Gorhover,
Serge Guillet,
Kristoffer Haldrup,
Marylesa Howard,
Kento Katagiri,
Seonghan Kim,
Sunam Kim,
Sungwon Kim,
Hyunjung Kim,
Erik Bergback Knudsen,
Stephan Kuschel
, et al. (18 additional authors not shown)
Abstract:
The structures, strain fields, and defect distributions in solid materials underlie the mechanical and physical properties across numerous applications. Many modern microstructural microscopy tools characterize crystal grains, domains and defects required to map lattice distortions or deformation, but are limited to studies of the (near) surface. Generally speaking, such tools cannot probe the str…
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The structures, strain fields, and defect distributions in solid materials underlie the mechanical and physical properties across numerous applications. Many modern microstructural microscopy tools characterize crystal grains, domains and defects required to map lattice distortions or deformation, but are limited to studies of the (near) surface. Generally speaking, such tools cannot probe the structural dynamics in a way that is representative of bulk behavior. Synchrotron X-ray diffraction based imaging has long mapped the deeply embedded structural elements, and with enhanced resolution, Dark Field X-ray Microscopy (DFXM) can now map those features with the requisite nm-resolution. However, these techniques still suffer from the required integration times due to limitations from the source and optics. This work extends DFXM to X-ray free electron lasers, showing how the $10^{12}$ photons per pulse available at these sources offer structural characterization down to 100 fs resolution (orders of magnitude faster than current synchrotron images). We introduce the XFEL DFXM setup with simultaneous bright field microscopy to probe density changes within the same volume. This work presents a comprehensive guide to the multi-modal ultrafast high-resolution X-ray microscope that we constructed and tested at two XFELs, and shows initial data demonstrating two timing strategies to study associated reversible or irreversible lattice dynamics.
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Submitted 5 September, 2023; v1 submitted 15 October, 2022;
originally announced October 2022.
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Radiation Damage and Thermal Recovery of Perovskite Superconductor Yttrium Barium Copper Oxide
Authors:
A. Khobnya,
M. E. Pek,
G. Greaves,
M. Danaie,
G. D. Brittles,
S. E. Donnelly,
F. Schoofs,
A. Reilly,
P. D. Edmondson,
S. Pedrazzini
Abstract:
High temperature superconducting materials are being considered to generate the magnetic fields required for the confinement of plasma in fusion reactors. The present study aims to assess the microstructural degradation resulting from ion implantation at room temperature under two implantation conditions in Yttrium Barium Copper Oxide (YBCO) tapes. Xray Diffraction (XRD) and high resolution charac…
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High temperature superconducting materials are being considered to generate the magnetic fields required for the confinement of plasma in fusion reactors. The present study aims to assess the microstructural degradation resulting from ion implantation at room temperature under two implantation conditions in Yttrium Barium Copper Oxide (YBCO) tapes. Xray Diffraction (XRD) and high resolution characterisation techniques including Atom Probe Tomography (APT) and Transmission Electron Microscopy (TEM) analyses were used to correlate alterations in superconducting behaviour measured using a Magnetic Properties Measurement System (MPMS) to amorphization and recovery caused by ion implantation. TEM analysis was performed to depth profile the degree of crystallinity (or lack thereof) on irradiated samples. SRIM predicted the damage depth at 900 nm below the sample surface of the 2 MeV Xe implanted sample and 450 nm beneath the surface of the 0.6 MeV Xe implanted sample. 2 MeV Xe implantation caused the superconducting temperature to decrease by 10 K and the critical current density to display a 10 fold reduction. Post irradiation heat treatments up to 600C caused recrystallisation of the irradiated layer, but also oxygen loss and alterations in grain size. The recrystallised grain orientation was random in TEM lamellae, however, bulk samples re-grew along the original crystal orientation provided that some of the original material was not amorphized (ie if they nucleated on crystalline YBCO). This is extremely promising for the thermal recovery of tokamak components.
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Submitted 10 March, 2020; v1 submitted 24 October, 2018;
originally announced October 2018.
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Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface
Authors:
R. Jaramillo,
Amanda Youssef,
Austin Akey,
Frank Schoofs,
Shriram Ramanathan,
Tonio Buonassisi
Abstract:
We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface…
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We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that Fermi level pinning is connected to the insulator-metal transition in doped ZnO, and that controlling this transition may be key to un-pinning the Fermi level in oxide / Si Schottky junctions.
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Submitted 29 October, 2015;
originally announced October 2015.
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Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism
Authors:
Sieu D. Ha,
R. Jaramillo,
D. M. Silevitch,
Frank Schoofs,
Kian Kerman,
John D. Baniecki,
Shriram Ramanathan
Abstract:
The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with va…
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The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation.
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Submitted 5 March, 2013; v1 submitted 9 January, 2013;
originally announced January 2013.
