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Grazing incidence X-ray fluorescence based characterization of nanostructures for element sensitive profile reconstruction
Authors:
Anna Andrle,
Philipp Hönicke,
Philipp Schneider,
Yves Kayser,
Martin Hammerschmidt,
Sven Burger,
Frank Scholze,
Burkhard Beckhoff,
Victor Soltwisch
Abstract:
For the reliable fabrication of the current and next generation of nanostructures it is essential to be able to determine their material composition and dimensional parameters. Using the grazing incidence X-ray fluoresence technique, which is taking advantage of the X-ray standing wave field effect, nanostructures can be investigated with a high sensitivity with respect to the structural and eleme…
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For the reliable fabrication of the current and next generation of nanostructures it is essential to be able to determine their material composition and dimensional parameters. Using the grazing incidence X-ray fluoresence technique, which is taking advantage of the X-ray standing wave field effect, nanostructures can be investigated with a high sensitivity with respect to the structural and elemental composition. This is demonstrated using lamellar gratings made of Si$_3$N$_4$. Rigorous field simulations obtained from a Maxwell solver based on the finite element method allow to determine the spatial distribution of elemental species and the geometrical shape with sub-nm resolution. The increasing complexity of nanostructures and demanded sensitivity for small changes quickly turn the curse of dimensionality for numerical simulation into a problem which can no longer be solved rationally even with massive parallelisation. New optimization schemes, e.g. machine learning, are required to satisfy the metrological requirements. We present reconstruction results obtained with a Bayesian optimization approach to reduce the computational effort.
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Submitted 28 April, 2021;
originally announced April 2021.
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Time-frequency analysis assisted reconstruction of ruthenium optical constants in the sub-EUV spectral range 8nm-23.75nm
Authors:
Qais Saadeh,
Philipp Naujok,
Vicky Philipsen,
Philipp Hönicke,
Christian Laubis,
Christian Buchholz,
Anna Andrle,
Christian Stadelhoff,
Heiko Mentzel,
Anja Schönstedt,
Victor Soltwisch,
Frank Scholze
Abstract:
The optical constants of ruthenium in the spectral range 8 nm to 23.75 nm with their corresponding uncertainties are derived from the reflectance of a sputtered ruthenium thin film in the Extreme Ultraviolet (EUV) spectral range measured using monochromatized synchrotron radiation. This work emphasizes the correlation between structure modelling and the reconstructed optical parameters in a detail…
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The optical constants of ruthenium in the spectral range 8 nm to 23.75 nm with their corresponding uncertainties are derived from the reflectance of a sputtered ruthenium thin film in the Extreme Ultraviolet (EUV) spectral range measured using monochromatized synchrotron radiation. This work emphasizes the correlation between structure modelling and the reconstructed optical parameters in a detailed inverse-problem optimization strategy. Complementary X-ray Reflectivity (XRR) measurements are coupled with Markov chain Monte Carlo (MCMC) based Bayesian inferences and quasi-model-independent methods to create a model factoring the sample's oxidation, contamination, and surface roughness. The sensitivity of the modelling scheme is tested and verified against contamination and oxidation. A notable approach mitigating the high dimensionality of the reconstruction problem is elaborated with the results of this work compared to two previously published datasets. The presented dataset is of high interest for the continuing development of Extreme Ultraviolet Lithography (EUVL) and EUV astronomy optical systems.
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Submitted 22 March, 2021;
originally announced March 2021.
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On uncertainties in the reconstruction of nanostructures in EUV scatterometry and grazing incidence small-angle X-ray scattering
Authors:
Analía Fernández Herrero,
Victor Soltwisch,
Mika Pflüger,
Jana Puls,
Frank Scholze
Abstract:
Increasing miniaturization and complexity of nanostructures require innovative metrology solutions with high throughput that can assess complex 3D structures in a non-destructive manner. EUV scatterometry is investigated for the characterization of nanostructured surfaces. The reconstruction is based on a rigorous simulation using a Maxwell solver based on finite-elements and is statistically vali…
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Increasing miniaturization and complexity of nanostructures require innovative metrology solutions with high throughput that can assess complex 3D structures in a non-destructive manner. EUV scatterometry is investigated for the characterization of nanostructured surfaces. The reconstruction is based on a rigorous simulation using a Maxwell solver based on finite-elements and is statistically validated with a Markov-Chain Monte Carlo sampling method. Here it is shown that this method is suitable for the dimensional characterization of the nanostructures and the investigation of oxide or contamination layers. In comparison to grazing-incidence small-angle X-rayscattering (GISAXS) EUV allows to probe smaller areas. The influence of the divergence on the diffracted intensities in EUV is much lower than in GISAXS, which also reduces the computational effort of the reconstruction.
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Submitted 4 March, 2021;
originally announced March 2021.
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The anisotropy in the optical constants of quartz crystals for soft X-rays
Authors:
A. Andrle,
P. Hönicke,
J. Vinson,
R. Quintanilha,
Q. Saadeh,
S. Heidenreich,
F. Scholze,
V. Soltwisch
Abstract:
The refractive index of a y-cut SiO$_2$ crystal surface is reconstructed from polarization dependent soft X-ray reflectometry measurements in the energy range from 45 eV to 620 eV. Due to the anisotropy of the crystal structure in the (100) and (001) directions, we observe a significant deviation of the measured reflectance at the Si-L$_{2,3}$ and O-K absorption edges. The anisotropy in the optica…
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The refractive index of a y-cut SiO$_2$ crystal surface is reconstructed from polarization dependent soft X-ray reflectometry measurements in the energy range from 45 eV to 620 eV. Due to the anisotropy of the crystal structure in the (100) and (001) directions, we observe a significant deviation of the measured reflectance at the Si-L$_{2,3}$ and O-K absorption edges. The anisotropy in the optical constants reconstructed from these data is also confirmed by ab initio Bethe-Salpeter Equation calculations of the O-K edge. This new experimental dataset expands the existing literature data for quartz optical constants significantly, particularly in the near-edge regions.
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Submitted 8 October, 2020;
originally announced October 2020.
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Grazing incidence-X-ray fluorescence for a dimensional and elemental characterization of well-ordered nanostructures
Authors:
Philipp Hönicke,
Anna Andrle,
Yves Kayser,
Konstantin V. Nikolaev,
Jürgen Probst,
Frank Scholze,
Victor Soltwisch,
Thomas Weimann,
Burkhard Beckhoff
Abstract:
The increasing importance of well-controlled ordered nanostructures on surfaces represents a challenge for existing metrology techniques. To develop such nanostructures and monitor complex processing constraints fabrication, both a dimensional reconstruction of nanostructures and a characterization (ideally a quantitative characterization) of their composition is required. In this work, we present…
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The increasing importance of well-controlled ordered nanostructures on surfaces represents a challenge for existing metrology techniques. To develop such nanostructures and monitor complex processing constraints fabrication, both a dimensional reconstruction of nanostructures and a characterization (ideally a quantitative characterization) of their composition is required. In this work, we present a soft X-ray fluorescence-based methodology that allows both of these requirements to be addressed at the same time. By applying the grazing-incidence X-ray fluorescence technique and thus utilizing the X-ray standing wave field effect, nanostructures can be investigated with a high sensitivity with respect to their dimensional and compositional characteristics. By varying the incident angles of the exciting radiation, element-sensitive fluorescence radiation is emitted from different regions inside the nanoobjects. By applying an adequate modeling scheme, these datasets can be used to determine the nanostructure characteristics. We demonstrate these capabilities by performing an element-sensitive reconstruction of a lamellar grating made of Si$_3$N$_4$, where GIXRF data for the O-K$α$ and N-K$α$ fluorescence emission allows a thin oxide layer to be reconstructed on the surface of the grating structure. In addition, we employ the technique also to three dimensional nanostructures and derive both dimensional and compositional parameters in a quantitative manner.
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Submitted 5 May, 2020;
originally announced May 2020.
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The refined EUV mask model
Authors:
I. A. Makhotkin,
M. Wu,
V. Soltwisch,
F. Scholze,
V. Philipsen
Abstract:
A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV photo-lithography (EUVL) imaging. The model is derived by combined analysis of the measured EUV and X-ray reflectivity of a state-of-the-art mask blank. T…
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A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV photo-lithography (EUVL) imaging. The model is derived by combined analysis of the measured EUV and X-ray reflectivity of a state-of-the-art mask blank. These two sets of measurements were analyzed using a combined free-form analysis procedure that delivers high-resolution X-ray and EUV optical constant depth profiles based on self-adapted sets of sublayers as thin as 0.25nm providing a more accurate description of the reflectivity than obtained from only EUV reflectivity. 'Free-form analysis' means that the shape of the layer-interfaces in the model is determined experimentally and is not given a priori by the structure model. To reduce the numerical effort for EUV imaging simulations a low-resolution model of the multilayer and absorber stack with sublayer thicknesses larger than 2nm, that fits to only the EUV reflectance, was derived from the high-resolution model. Rigorous high-NA EUVL simulations were done to compare the performance of the new model to our previous work.
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Submitted 19 December, 2019;
originally announced December 2019.
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A semi-analytical approach for the characterization of ordered 3D nano structures using grazing-incidence X-ray fluorescence
Authors:
K. V. Nikolaev,
V. Soltwisch,
P. Hoenicke,
F. Scholze,
J. de la Rie,
S. N. Yakunin,
I. A. Makhotkin,
R. W. E. van de Kruijs,
F. Bijkerk
Abstract:
Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new computational scheme for the simulation of the angular dependent fluorescence intensities from such periodic 2D and 3D nanoscale structures. The computation…
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Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new computational scheme for the simulation of the angular dependent fluorescence intensities from such periodic 2D and 3D nanoscale structures. The computational scheme is based on the dynamical diffraction theory in many-beam approximation, which allows to derive a semi-analytical solution to the Sherman equation in a linear-algebraic form. The computational scheme has been used to analyze recently published GIXRF data measured on 2D Si3N4 lamellar gratings, as well as on periodically structured 3D Cr nano pillars. Both the dimensional and structural parameters of these nanostructures have been reconstructed by fitting numeric simulations to the experimental GIXRF data. Obtained results show good agreement with nominal parameters used in the manufacturing of the structures, as well as with reconstructed parameters based on the previously published finite element method simulations, in case of the Si3N4 grating.
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Submitted 30 August, 2019;
originally announced August 2019.
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Applicability of the Debye-Waller dam** factor for the determination of the line-edge roughness of lamellar gratings
Authors:
Analía Fernández Herrero,
Mika Pflüger,
Jürgen Probst,
Frank Scholze,
Victor Soltwisch
Abstract:
Periodic nanostructures are fundamental elements in optical instrumentation as well as basis structures in integrated electronic circuits. Decreasing sizes and increasing complexity of nanostructures have made roughness a limiting parameter to the performance. Grazing-incidence small-angle X-ray scattering is a characterization method that is sensitive to three-dimensional structures and their imp…
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Periodic nanostructures are fundamental elements in optical instrumentation as well as basis structures in integrated electronic circuits. Decreasing sizes and increasing complexity of nanostructures have made roughness a limiting parameter to the performance. Grazing-incidence small-angle X-ray scattering is a characterization method that is sensitive to three-dimensional structures and their imperfections. To quantify line-edge roughness, a Debye-Waller factor (DWF), which is derived for binary gratings, is usually used. In this work, we systematically analyze the effect of roughness on the diffracted intensities. Two different limits to applying the DWF are found depending on whether or not the roughness is normally distributed.
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Submitted 11 July, 2019;
originally announced July 2019.
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Distortion analysis of crystalline and locally quasicrystalline 2D photonic structures with GISAXS
Authors:
Mika Pflüger,
Victor Soltwisch,
Jolly Xavier,
Jürgen Probst,
Frank Scholze,
Christiane Becker,
Michael Krumrey
Abstract:
In this study, grazing incidence small-angle X-ray scattering (GISAXS) is used to collect statistical information on dimensional parameters in an area of 20 mm x 15 mm on photonic structures produced by nanoimprint lithography. The photonic structures are composed of crystalline and locally quasicrystalline two-dimensional patterns with structure sizes between about 100 nm and 10 $μ$m to enable br…
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In this study, grazing incidence small-angle X-ray scattering (GISAXS) is used to collect statistical information on dimensional parameters in an area of 20 mm x 15 mm on photonic structures produced by nanoimprint lithography. The photonic structures are composed of crystalline and locally quasicrystalline two-dimensional patterns with structure sizes between about 100 nm and 10 $μ$m to enable broadband visible light absorption for use in solar energy harvesting. These first GISAXS measurements on locally quasicrystalline samples demonstrate that GISAXS is capable of showing the locally quasicrystalline nature of the samples while at the same time revealing the long-range periodicity introduced due to the lattice design. We describe the scattering qualitatively in the framework of the distorted wave Born approximation using a hierarchical model mirroring the sample design, which consists of a rectangular and locally quasicrystalline supercell which is repeated periodically to fill the whole surface.
The nanoimprinted samples are compared to a sample manufactured using electron beam lithography and the distortions of the periodic and locally quasiperiodic samples are quantified statistically. Due to the high sensitivity of GISAXS to deviations from the perfect lattice, the misalignment of the crystallographic axes was measured with a resolution of 0.015°, showing distortions up to +/- 0.15° in the investigated samples.
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Submitted 19 March, 2019;
originally announced March 2019.
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Characteristic diffuse scattering from distinct line roughnesses
Authors:
Analía Fernández Herrero,
Mika Pflüger,
Frank Scholze,
Victor Soltwisch
Abstract:
Lamellar gratings are widely used diffractive optical elements; gratings etched into Si can be used as structural elements or prototypes of structural elements in integrated electronic circuits. For the control of the lithographic manufacturing process, a rapid in-line characterization of nanostructures is indispensable. Numerous studies on the determination of regular geometry parameters of lamel…
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Lamellar gratings are widely used diffractive optical elements; gratings etched into Si can be used as structural elements or prototypes of structural elements in integrated electronic circuits. For the control of the lithographic manufacturing process, a rapid in-line characterization of nanostructures is indispensable. Numerous studies on the determination of regular geometry parameters of lamellar gratings from optical and extreme ultraviolet (EUV) scattering highlight the impact of roughness on the optical performance as well as on the reconstruction of these structures. Thus, a set of nine lamellar Si gratings with a well defined line edge roughness or line width roughness were designed. The investigation of these structures using EUV small-angle scattering reveals a strong correlation between the type of line roughness and the angular scattering distribution. These distinct scattering patterns open new paths for the unequivocal characterization of such structures by EUV scatterometry.
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Submitted 18 October, 2018;
originally announced October 2018.
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Element sensitive reconstruction of nanostructured surfaces with finite elements and grazing incidence soft X-ray fluorescence
Authors:
Victor Soltwisch,
Philipp Hönicke,
Yves Kayser,
Janis Eilbracht,
Jürgen Probst,
Frank Scholze,
Burckhard Beckhoff
Abstract:
The geometry of a Si$_3$N$_4$ lamellar grating was investigated experimentally with reference-free grazing-incidence X-ray fluorescence analysis. While simple layered systems are usually treated with the matrix formalism to determine the X-ray standing wave field, this approach fails for laterally structured surfaces. Maxwell solvers based on finite elements are often used to model electrical fiel…
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The geometry of a Si$_3$N$_4$ lamellar grating was investigated experimentally with reference-free grazing-incidence X-ray fluorescence analysis. While simple layered systems are usually treated with the matrix formalism to determine the X-ray standing wave field, this approach fails for laterally structured surfaces. Maxwell solvers based on finite elements are often used to model electrical field strengths for any 2D or 3D structures in the optical spectral range. We show that this approach can also be applied in the field of X-rays. The electrical field distribution obtained with the Maxwell solver can subsequently be used to calculate the fluorescence intensities in full analogy to the X-ray standing wave field obtained by the matrix formalism. Only the effective 1D integration for the layer system has to be replaced by a 2D integration of the finite elements, taking into account the local excitation conditions. We will show that this approach is capable of reconstructing the geometric line shape of a structured surface with high elemental sensitivity. This combination of GIXRF and finite-element simulations paves the way for a versatile characterization of nanoscale-structured surfaces.
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Submitted 12 January, 2018;
originally announced January 2018.
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Reconstructing Detailed Line Profiles of Lamellar Gratings from GISAXS Patterns with a Maxwell Solver
Authors:
Victor Soltwisch,
Analia Fernandez Herrero,
Mika Pflüger,
Anton Haase,
Jürgen Probst,
Christian Laubis,
Michael Krumrey,
Frank Scholze
Abstract:
Laterally periodic nanostructures were investigated with grazing incidence small angle X-ray scattering (GISAXS) by using the diffraction patterns to reconstruct the surface shape. To model visible light scattering, rigorous calculations of the near and far field by numerically solving Maxwell's equations with a finite-element method are well established. The application of this technique to X-ray…
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Laterally periodic nanostructures were investigated with grazing incidence small angle X-ray scattering (GISAXS) by using the diffraction patterns to reconstruct the surface shape. To model visible light scattering, rigorous calculations of the near and far field by numerically solving Maxwell's equations with a finite-element method are well established. The application of this technique to X-rays is still challenging, due to the discrepancy between incident wavelength and finite-element size. This drawback vanishes for GISAXS due to the small angles of incidence, the conical scattering geometry and the periodicity of the surface structures, which allows a rigorous computation of the diffraction efficiencies with sufficient numerical precision. To develop dimensional metrology tools based on GISAXS, lamellar gratings with line widths down to 55 nm were produced by state-of-the-art e-beam lithography and then etched into silicon. The high surface sensitivity of GISAXS in conjunction with a Maxwell solver allows a detailed reconstruction of the grating line shape also for thick, non-homogeneous substrates. The reconstructed geometrical line shape models are statistically validated by applying a Markov chain Monte Carlo (MCMC) sampling technique which reveals that GISAXS is able to reconstruct critical parameters like the widths of the lines with sub-nm uncertainty.
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Submitted 4 October, 2017; v1 submitted 26 April, 2017;
originally announced April 2017.
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Grazing Incidence Small Angle X-Ray Scattering (GISAXS) on Small Targets Using Large Beams
Authors:
Mika Pflüger,
Victor Soltwisch,
Jürgen Probst,
Frank Scholze,
Michael Krumrey
Abstract:
GISAXS is often used as a versatile tool for the contactless and destruction-free investigation of nanostructured surfaces. However, due to the shallow incidence angles, the footprint of the X-ray beam is significantly elongated, limiting GISAXS to samples with typical target lengths of several millimetres. For many potential applications, the production of large target areas is impractical, and t…
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GISAXS is often used as a versatile tool for the contactless and destruction-free investigation of nanostructured surfaces. However, due to the shallow incidence angles, the footprint of the X-ray beam is significantly elongated, limiting GISAXS to samples with typical target lengths of several millimetres. For many potential applications, the production of large target areas is impractical, and the targets are surrounded by structured areas. Because the beam footprint is larger than the targets, the surrounding structures contribute parasitic scattering, burying the target signal. In this paper, GISAXS measurements of isolated as well as surrounded grating targets in Si substrates with line lengths from $50\,{\rmμm}$ down to $4\,{\rmμm}$ are presented. For the isolated grating targets, the changes in the scattering patterns due to the reduced target length are explained. For the surrounded grating targets, the scattering signal of a $15\,{\rmμm}\,\times\,15\,{\rmμm}$ target grating structure is separated from the scattering signal of $100\,{\rmμm}\,\times\,100\,{\rmμm}$ nanostructured surroundings by producing the target with a different orientation with respect to the predominant direction of the surrounding structures. The described technique allows to apply GISAXS, e.g. for characterization of metrology fields in the semiconductor industry, where up to now it has been considered impossible to use this method due to the large beam footprint.
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Submitted 3 March, 2017;
originally announced March 2017.
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Correlated Diffuse X-ray Scattering from Periodically Nano-Structured Surfaces
Authors:
Victor Soltwisch,
Anton Haase,
Jan Wernecke,
Juergen Probst,
Max Schoengen,
Sven Burger,
Michael Krumrey,
Frank Scholze
Abstract:
Laterally periodic nanostructures were investigated with grazing incidence small angle X-ray scattering. To support an improved reconstruction of nanostructured surface geometries, we investigated the origin of the contributions to the diffuse scattering pattern which is correlated to the surface roughness. Resonant diffuse scattering leads to a palm-like structure of intensity sheets. Dynamic sca…
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Laterally periodic nanostructures were investigated with grazing incidence small angle X-ray scattering. To support an improved reconstruction of nanostructured surface geometries, we investigated the origin of the contributions to the diffuse scattering pattern which is correlated to the surface roughness. Resonant diffuse scattering leads to a palm-like structure of intensity sheets. Dynamic scattering generates the so-called Yoneda band caused by a resonant scatter enhancement at the critical angle of total reflection and higher-order Yoneda bands originating from a subsequent diffraction of the Yoneda enhanced scattering at the grating. Our explanations are supported by modelling using a solver for the time-harmonic Maxwell's equations based on the finite-element method.
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Submitted 20 July, 2016; v1 submitted 7 September, 2015;
originally announced September 2015.
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Analytical modeling and 3D finite element simulation of line edge roughness in scatterometry
Authors:
A. Kato,
S. Burger,
F. Scholze
Abstract:
The influence of edge roughness in angle resolved scatterometry at periodically structured surfaces is investigated. A good description of the radiation interaction with structured surfaces is crucial for the understanding of optical imaging processes like, e.g. in photolithography. We compared an analytical 2D model and a numerical 3D simulation with respect to the characterization of 2D diffract…
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The influence of edge roughness in angle resolved scatterometry at periodically structured surfaces is investigated. A good description of the radiation interaction with structured surfaces is crucial for the understanding of optical imaging processes like, e.g. in photolithography. We compared an analytical 2D model and a numerical 3D simulation with respect to the characterization of 2D diffraction of a line grating involving structure roughness. The results show a remarkably high agreement. The diffraction intensities of a rough structure can therefore be estimated using the numerical simulation result of an undisturbed structure and an analytically derived correction function. This work allows to improve scatterometric results for the case of practically relevant 2D structures.
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Submitted 21 August, 2012;
originally announced August 2012.
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Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations
Authors:
S. Burger,
L. Zschiedrich,
J. Pomplun,
F. Schmidt,
A. Kato,
C. Laubis,
F. Scholze
Abstract:
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.
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Submitted 21 October, 2011;
originally announced October 2011.
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Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis
Authors:
J. Pomplun,
S. Burger,
F. Schmidt,
F. Scholze,
C. Laubis,
U. Dersch
Abstract:
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In…
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Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ..., 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.
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Submitted 11 November, 2010;
originally announced November 2010.
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Rigorous FEM-Simulation of EUV-Masks: Influence of Shape and Material Parameters
Authors:
J. Pomplun,
S. Burger,
F. Schmidt,
L. Zschiedrich,
F. Scholze,
C. Laubis,
U. Dersch
Abstract:
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives…
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We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements.
This work results from a collaboration between Advanced Mask Technology Center (AMTC, mask fabrication), Physikalisch-Technische Bundesanstalt (PTB, scatterometry), Zuse Institute Berlin (ZIB), and JCMwave (numerical simulation).
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Submitted 26 October, 2006;
originally announced October 2006.
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Characterising a Si(Li) detector element for the SIXA X-ray spectrometer
Authors:
T. Tikkanen,
S. Kraft,
F. Scholze,
R. Thornagel,
G. Ulm
Abstract:
The detection efficiency and response function of a Si(Li) detector element for the SIXA spectrometer have been determined in the 500 eV to 5 keV energy range using synchrotron radiation emitted at a bending magnet of the electron storage ring BESSY, which is a primary radiation standard. The agreement between the measured spectrum and the model calculation is better than 2%.
PACS: 95.55.Ka; 0…
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The detection efficiency and response function of a Si(Li) detector element for the SIXA spectrometer have been determined in the 500 eV to 5 keV energy range using synchrotron radiation emitted at a bending magnet of the electron storage ring BESSY, which is a primary radiation standard. The agreement between the measured spectrum and the model calculation is better than 2%.
PACS: 95.55.Ka; 07.85.Nc; 29.40.Wk; 85.30.De
Keywords: Si(Li) detectors, X-ray spectrometers, detector calibration, X-ray response, spectral lineshape
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Submitted 4 March, 1997;
originally announced March 1997.