Statistical study and parallelisation of multiplexed single-electron sources
Authors:
S. Norimoto,
P. See,
N. Schoinas,
I. Rungger,
T. O. Boykin II,
M. D. Stewart Jr,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a…
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Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three.
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Submitted 8 July, 2024;
originally announced July 2024.
Fast characterization of multiplexed single-electron pumps with machine learning
Authors:
N. Schoinas,
Y. Rath,
S. Norimoto,
W. Xie,
P. See,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka,
A. Rossi,
I. Rungger
Abstract:
We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease…
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We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps.
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Submitted 31 May, 2024;
originally announced May 2024.
