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Exploring the impact of the inverse Faraday effect on all-optical helicity-dependent magnetization switching
Authors:
M. Kohlmann,
L. Vollroth,
K. Jäckel,
K. Hovorakova,
E. Schmoranzerova,
K. Carva,
D. Hinzke,
U. Nowak,
M. Münzenberg,
J. Walowski
Abstract:
All-optical helicity-dependent magnetization switching (AO-HDS) is the quickest deterministic technique for data storage by solely using ultrashort laser pulses. Granular high data density magnetic storage media developed for heat-assisted magnetic recording (HAMR) provide an ideal playground to investigate the interplay of effects leading to magnetization switching. In the latest perception, we i…
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All-optical helicity-dependent magnetization switching (AO-HDS) is the quickest deterministic technique for data storage by solely using ultrashort laser pulses. Granular high data density magnetic storage media developed for heat-assisted magnetic recording (HAMR) provide an ideal playground to investigate the interplay of effects leading to magnetization switching. In the latest perception, we identify two effects, the magnetic circular dichroism (MCD) and the inverse Faraday effect (IFE), as the forces driving the switching process. During photon absorption, which leads to a rapid temperature rise and thus to magnetization quenching, the MCD ensures two distinct electron temperatures due to helicity-dependent absorption. This effect already holds a nonvanishing probability for magnetization switching. At the same time, the IFE induces a magnetic moment within the material, enhancing the switching probability. We present AO-HDS experiments using ultrashort laser pulses ($\lesssim 200\,\mathrm{fs}$) in the near-infrared range from $800\,\mathrm{nm}$ to $1500\,\mathrm{nm}$. The experiments demonstrate a strong dependence of the switching efficiency on the absorbed energy density, elevating the electron temperature in the vicinity of the Curie point, allowing for the IFE to take full effect, inducing a magnetic moment for deterministic switching in the quenched magnetization state. While we do not observe an enhanced switching due to an increased MCD, a higher induced magnetization usually improves the switching rate if the electron temperature reaches the transition temperature vicinity. Therefore, we conclude that the magnetic moment generated by the IFE is crucial for the switching efficiency and the distinct deterministic character of the switching process. Laser pulses with a higher absorption induce a higher magnetic moment and switch magnetization at lower fluences.
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Submitted 31 January, 2024;
originally announced January 2024.
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Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films
Authors:
Miina Leiviskä,
Javier Rial,
Antonín Badura,
Rafael Lopes Seeger,
Ismaïla Kounta,
Sebastian Beckert,
Dominik Kriegner,
Isabelle Joumard,
Eva Schmoranzerová,
Jairo Sinova,
Olena Gomonay,
Andy Thomas,
Sebastian T. B. Goennenwein,
Helena Reichlová,
Libor Šmejkal,
Lisa Michez,
Tomáš Jungwirth,
Vincent Baltz
Abstract:
Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rota…
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Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative Néel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the Néel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material.
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Submitted 4 January, 2024;
originally announced January 2024.
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Twist-angle tunable spin texture in WSe$_2$/graphene van der Waals heterostructures
Authors:
Haozhe Yang,
Beatriz Martín-García,
Jozef Kimák,
Eva Schmoranzerová,
Eoin Dolan,
Zhendong Chi,
Marco Gobbi,
Petr Němec,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion…
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Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe$_2$/graphene heterostructures by using spin precession experiments. For specific twist angles, we experimentally detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by angle twisting, highlighting its critical role on the spin-orbit properties of WSe$_2$/graphene heterostructures and paving the way for the development of novel spin-twistronic devices.
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Submitted 15 December, 2023;
originally announced December 2023.
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Even-in-magnetic-field part of transverse resistivity as a probe of magnetic order
Authors:
Antonin Badura,
Dominik Kriegner,
Eva Schmoranzerová,
Karel Výborný,
Miina Leiviskä,
Rafael Lopes Seeger,
Vincent Baltz,
Daniel Scheffler,
Sebastian Beckert,
Ismaila Kounta,
Lisa Michez,
Libor Šmejkal,
Jairo Sinova,
Sebastian T. B. Goennenwein,
Jakub Železný,
Helena Reichlová
Abstract:
The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effec…
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The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is typically ascribed to experimental artefacts and ignored. We here show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner-Wohlfarth modelling. We then apply our approach to magnetotransport measurements in $\rm Mn_5Si_3$ thin films with a complex compensated magnetic order. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$ K and thus offers a simple and readily available probe of the magnetic order.
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Submitted 24 November, 2023;
originally announced November 2023.
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Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films
Authors:
Peter Kubaščík,
Andrej Farkaš,
Kamil Olejník,
Tinkara Troha,
Matěj Hývl,
Filip Krizek,
Deep C. Joshi,
Tomáš Ostatnický,
Jiří Jechumtál,
Eva Schmoranzerová,
Richard P. Campion,
Jakub Zázvorka,
Vít Novák,
Petr Kužel,
Tomáš Jungwirth,
Petr Němec,
Lukáš Nádvorník
Abstract:
Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be…
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Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be affected by the film morphology and growth defects. In this study, we investigate the properties of CuMnAs thin films by probing the defect-related uniaxial anisotropy of electric conductivity by contact-free terahertz transmission spectroscopy. We show that the terahertz measurements conveniently detect the conductivity anisotropy, that are consistent with conventional DC Hall-bar measurements. Moreover, the terahertz technique allows for considerably finer determination of anisotropy axes and it is less sensitive to the local film degradation. Thanks to the averaging over a large detection area, the THz probing also allows for an analysis of strongly non-uniform thin films. Using scanning near-field terahertz and electron microscopies, we relate the observed anisotropic conductivity of CuMnAs to the elongation and orientation of growth defects, which influence the local microscopic conductivity. We also demonstrate control over the morphology of defects by using vicinal substrates.
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Submitted 27 March, 2023;
originally announced March 2023.
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Anomalous Nernst effect in Mn$_3$NiN thin films
Authors:
Sebastian Beckert,
João Godinho,
Freya Johnson,
Jozef Kimák,
Eva Schmoranzerová,
Jan Zemen,
Zbyněk Šobáň,
Kamil Olejník,
Jakub Železný,
Joerg Wunderlich,
Petr Němec,
Dominik Kriegner,
Andy Thomas,
Sebastian T. B. Goennenwein,
Lesley F Cohen,
Helena Reichlová
Abstract:
The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect…
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The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results.
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Submitted 5 December, 2022;
originally announced December 2022.
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Ultrashort spin-orbit torque generated by femtosecond laser pulses
Authors:
T. Janda,
T. Ostatnicky,
P. Nemec,
E. Schmoranzerova,
R. Campion,
V. Hills,
V. Novak,
Z. Soban,
J. Wunderlich
Abstract:
To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed…
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To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance. Here we demonstrate generation of ultrashort SOT pulses that excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses into high-amplitude current pulses in an electrically biased p-i-n photodiode. We control the polarity, amplitude, and duration of the current pulses and, most importantly, also their propagation direction with respect to the crystal orientation. The SOT origin of the excited Larmor precession was revealed by a detailed analysis of the precession phase and amplitude at different experimental conditions.
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Submitted 25 August, 2022;
originally announced August 2022.
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Identifying the octupole Antiferromagnetic domain orientation in Mn$_{3}$NiN by scanning Anomalous Nernst Effect microscopy
Authors:
F. Johnson,
J. Kimák,
J. Zemen,
Z. Šobáň,
E. Schmoranzerová,
J. Godinho,
P. Němec,
S. Beckert,
H. Reichlová,
D. Boldrin,
J. Wunderlich,
L. F. Cohen
Abstract:
The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directio…
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The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directions. The sign of each component of the anomalous Nernst effect is determined by the local antiferromagnetic domain state. In this work, a temperature gradient is induced in a 50 nm thick Mn$_{3}$NiN two micron-size Hall cross by a focused scanning laser beam, and the spatial distribution of the anomalous Nernst voltage is used to image and identify the octupole macrodomain arrangement. Although the focused laser beam width may span many individual domains, cooling from room temperature through the antiferromagnetic transition temperature in an in-plane magnetic field prepares the domain state producing a checkerboard pattern resulting from the convolution of contributions from each domain. These images together with atomistic and micromagnetic simulations suggest an average macrodomain of the order of $1 μm^{2}$.
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Submitted 24 May, 2022;
originally announced May 2022.
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Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures
Authors:
T. Schumann,
T. Kleinke,
L. Braun,
N. Meyer,
G. Mussler,
J. Kampmeier,
D. Grützmacher,
E. Schmoranzerova,
K. Olejník,
H. Reichlová,
C. Heiliger,
C. Denker,
J. Walowski,
T. Kampfrath,
M. Münzenberg
Abstract:
We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiment…
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We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface.
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Submitted 3 February, 2022;
originally announced February 2022.
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Mechanism of Spin-Orbit Torques in Platinum Oxide Systems
Authors:
Jayshankar Nath,
Alexandru Vladimir Trifu,
Mihai Sebastian Gabor,
Ali Hallal,
Stephane Auffret,
Sebastien Labau,
Aymen Mahjoub,
Edmond Chan,
Avinash Kumar Chaurasiya,
Amrit Kumar Mondal,
Haozhe Yang,
Eva Schmoranzerova,
Mohamed Ali Nsibi,
Isabelle Joumard,
Anjan Barman,
Bernard Pelissier,
Mairbek Chshiev,
Gilles Gaudin,
Ioan Mihai Miron
Abstract:
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of for…
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Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.
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Submitted 13 December, 2021;
originally announced December 2021.
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Thermally induced all-optical ferromagnetic resonance in thin YIG films
Authors:
E. Schmoranzerová,
J. Kimák,
R. Schlitz,
S. T. B. Goennenwein,
D. Kriegner,
H. Reichlová,
Z. Šobáň,
G. Jakob,
E. -J. Guo,
M. Kläui,
M. Münzenberg,
P. Němec,
T. Ostatnický
Abstract:
All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heatin…
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All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heating of the metallic layer with femtosecond laser pulses. The heating modifies the magneto-crystalline anisotropy of the YIG film and shifts the quasi-equilibrium orientation of magnetization, which results in precessional magnetization dynamics. The laser-induced magnetization precession corresponds to a uniform (Kittel) magnon mode, with the precession frequency determined by the magnetic anisotropy of the material as well as the external magnetic field, and the dam** time set by a Gilbert dam** parameter. The AO-FMR method thus enables measuring local magnetic properties, with spatial resolution given only by the laser spot size.
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Submitted 31 October, 2021;
originally announced November 2021.
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Giant quadratic magneto-optical response of thin YIG films for sensitive magnetometric experiments
Authors:
E. Schmoranzerová,
T. Ostatnický,
J. Kimák,
D. Kriegner,
H. Reichlová,
R. Schlitz,
A. Baďura,
Z. Šobáň,
M. Münzenberg,
G. Jakob,
E. -J. Guo,
M. Kläui,
P. Němec
Abstract:
We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response,…
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We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response, reaching values of 450 urad that are comparable with Heusler alloys or ferromagnetic semiconductors. Furthermore, we demonstrate that a proper choice of experimental conditions, particularly with respect to the wavelength, is crucial for optimization of the quadratic magneto-optical effect for magnetometry measurement.
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Submitted 26 October, 2021;
originally announced October 2021.
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Macroscopic time reversal symmetry breaking by staggered spin-momentum interaction
Authors:
Helena Reichlová,
Rafael Lopes Seeger,
Rafael González-Hernández,
Ismaila Kounta,
Richard Schlitz,
Dominik Kriegner,
Philipp Ritzinger,
Michaela Lammel,
Miina Leiviskä,
Václav Petříček,
Petr Doležal,
Eva Schmoranzerová,
Antonín Bad'ura,
Andy Thomas,
Vincent Baltz,
Lisa Michez,
Jairo Sinova,
Sebastian T. B. Goennenwein,
Tomáš Jungwirth,
Libor Šmejkal
Abstract:
Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Aniso…
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Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Anisotropic electron interactions, on the other hand, have been a domain of correlated quantum phases, such as the T-invariant nematics or unconventional superconductors. Here we report discovery of a broken-T phase of itinerant Bloch electrons with an unconventional anisotropic spin-momentum interaction, whose staggered nature leads to the formation of two ferromagnetic-like valleys in the momentum space with opposite spin splittings. We describe qualitatively the effect by deriving a non-relativistic single-particle Hamiltonian model. Next, we identify the unconventional staggered spin-momentum interaction by first-principles electronic structure calculations in a four-sublattice antiferromagnet Mn5Si3 with a collinear checkerboard magnetic order. We show that the staggered spin-momentum interaction is set by nonrelativistic spin-symmetries which were previously omitted in relativistic physics classifications of spin interactions and topological quasiparticles. Our measurements of a spontaneous Hall effect in epilayers of antiferromagnetic Mn5Si3 with vanishing magnetization are consistent with our theory predictions. Bloch electrons with the unconventional staggered spin interaction, compatible with abundant low atomic-number materials, strong spin-coherence, and collinear antiferromagnetic order open unparalleled possibilities for realizing T-symmetry broken spin and topological quantum phases.
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Submitted 20 March, 2021; v1 submitted 31 December, 2020;
originally announced December 2020.
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Quasi-nondegenerate pump-probe magnetooptical experiment in GaAs/AlGaAs heterostructure based on spectral filtration
Authors:
M. Surynek,
L. Nadvornik,
E. Schmoranzerova,
P. Nemec
Abstract:
We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves…
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We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves the contradictory requirements on an efficient removal of pump photons from the probe beam, to achieve a good signal-to-noise ratio, simultaneously with a needed spectral proximity of the excitation and probing, which is essential for magnetooptical study of many material systems. Importantly, this spectral-filtration of 100 fs long laser pulses does not affect considerably the resulting time-resolution, which remains well below 500 fs. We demonstrate the practical applicability of this technique with close but distinct wavelengths of pump and probe pulses in spatially- and time-resolved spin-sensitive magnetooptical Kerr effect (MOKE) experiment in GaAs/AlGaAs heterostructure, where a high-mobility spin system is formed after optical injection of electrons at wavelengths close to MOKE resonance. In particular, we studied the time- and spatial-evolutions of charge-related (reflectivity) and spin-related (MOKE) signals. We revealed that they evolve in a similar but not exactly the same way which we attributed to interplay of several electron many-body effects in GaAs.
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Submitted 7 April, 2020;
originally announced April 2020.
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Observation of spin Nernst photocurrents in topological insulators
Authors:
T. Schumann,
N. Meyer,
G. Mussler,
J. Kampmeier,
D. Grützmacher,
E. Schmoranzerova,
L. Braun,
T. Kampfrath,
J. Walowski,
M. Münzenberg
Abstract:
The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bu…
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The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bunches spin-current sources for the generation of THz radiation. On the other hand, those spin-polarized surface-state currents when generated by a voltage lead to large spin Hall effects, or when generated by a temperature gradient to the thermal analogue, the spin Nernst effect. Both mutually convert charge/ heat currents into transverse spin currents leading to spin accumulations. By connecting both research fields, we show the evidence of heat-transport related spin Hall effects that can be extracted from opto-transport experiments. This heat-driven spin Nernst effect drives a transverse spin-current and affects the optical spin-orientation in the three-dimensional topological insulator. This manifests as a modification of the circular polarization-dependent photocurrent. We illuminate the detailed thermocurrent distribution, including the influence of edges and contacts, in spatially resolved current maps.
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Submitted 30 October, 2018;
originally announced October 2018.
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Voigt effect-based wide-field magneto-optical microscope integrated in a pump-probe experimental setup
Authors:
T. Janda,
L. Nadvornik,
J. Kucharik,
D. Butkovicova,
E. Schmoranzerova,
F. Trojanek,
P. Nemec
Abstract:
In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using…
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In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using an in-plane magnetized ferromagnetic semiconductor (Ga,Mn)As. It was revealed that the presence of mechanical defects in the (Ga,Mn)As epilayer alters significantly the magnetic anisotropy in their proximity. The importance of MO experiments with simultaneous temporal and spatial resolutions was demonstrated using (Ga,Mn)As sample attached to a piezoelectric actuator, which produces a voltage-controlled strain. We observed a considerably different behavior in different parts of the sample that enabled us to identify sample parts where the epilayer magnetic anisotropy was significantly modified by a presence of the piezostressor and where it was not. Finally, we discuss the possible applicability of our experimental setup for the research of compensated antiferromagnets, where only MO effects even in magnetic moments are present.
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Submitted 28 February, 2018;
originally announced February 2018.
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Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
Authors:
N. Tesarova,
D. Butkovicova,
R. P. Campion,
A. W. Rushforth,
K. W. Edmonds,
P. Wadley,
B. L. Gallagher,
E. Schmoranzerova,
F. Trojanek,
P. Maly,
P. Motloch,
V. Novak,
T. Jungwirth,
P. Nemec
Abstract:
We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis o…
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We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert dam** constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert dam** and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession dam** is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.
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Submitted 19 May, 2014;
originally announced May 2014.
