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Control of Magnetic Order in Spinel ZnFe$_2$O$_4$ Thin Films Through Intrinsic Defect Manipulation
Authors:
Vitaly Zviagin,
Chris Sturm,
Pablo Esquinazi,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The magnetic response is enhanced by annealing the films at 250$^{\circ}$C and diminished at annealing temperatures above 300$^{\circ}$C. The initial increase is a…
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We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The magnetic response is enhanced by annealing the films at 250$^{\circ}$C and diminished at annealing temperatures above 300$^{\circ}$C. The initial increase is attributed to the formation of oxygen vacancies after argon treatment, evident by the increase in the low energy absorption at $\sim$ 0.9 eV involving Fe$^{2+}$ cations. The weakened magnetic response is related to a decline in disorder with a cation redistribution toward a normal spinel configuration. The structural renormalization is consistent with the decrease and increase in oscillator strength of respective electronic transitions involving tetrahedrally (at $\sim$ 3.5 eV) and octahedrally (at $\sim$ 5.7 eV) coordinated Fe$^{3+}$ cations.
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Submitted 30 September, 2019;
originally announced September 2019.
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Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
Authors:
Steffen Richter,
Oliver Herrfurth,
Shirly Espinoza,
Mateusz Rebarz,
Miroslav Kloz,
Joshua A. Leveillee,
André Schleife,
Stefan Zollner,
Marius Grundmann,
Jakob Andreasson,
Rüdiger Schmidt-Grund
Abstract:
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excitons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry…
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Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excitons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry, we can directly and unambiguously obtain the real and imaginary part of the transient dielectric function which we compare with first-principles simulations. We find interband and excitonic absorption partially blocked and screened by the photo-excited electron occupation of the conduction band and hole occupation of the valence band (absorption bleaching). Exciton absorption turns spectrally narrower upon pum** and sustains the Mott transition, indicating Mahan excitons. Simultaneously, intra-valence-band transitions occur at sub-picosecond time scales after holes scatter to the edge of the Brillouin zone. Our results pave new ways for the understanding of non-equilibrium charge-carrier dynamics in materials by reliably distinguishing between changes in absorption coefficient and refractive index, thereby separating competing processes. This information will help to overcome the limitations of materials for high-power optical devices that owe their properties from dynamics in the ultrafast regime.
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Submitted 27 July, 2020; v1 submitted 15 February, 2019;
originally announced February 2019.
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Optical properties of thin-film vanadium dioxide from the visible to the far infrared
Authors:
Chenghao Wan,
Zhen Zhang,
David Woolf,
Colin M. Hessel,
Jura Rensberg,
Joel M. Hensley,
Yuzhe Xiao,
Alireza Shahsafi,
Jad Salman,
Steffen Richter,
Yifei Sun,
M. Mumtaz Qazilbash,
Rüdiger Schmidt-Grund,
Carsten Ronning,
Shriram Ramanathan,
Mikhail A. Kats
Abstract:
The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in optics, the optical properties of VO2 across its IMT are scattered throughout the literature, and are not available in some wavelength regions. We characterized the c…
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The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in optics, the optical properties of VO2 across its IMT are scattered throughout the literature, and are not available in some wavelength regions. We characterized the complex refractive index of VO2 thin films across the IMT for free-space wavelengths from 300 nm to 30 μm, using broadband spectroscopic ellipsometry, reflection spectroscopy, and the application of effective-medium theory.
We studied VO2 thin films of different thickness, on two different substrates (silicon and sapphire), and grown using different synthesis methods (sputtering and sol gel). While there are differences in the optical properties of VO2 synthesized under different conditions, they are relatively minor compared to the change resulting from the IMT, most notably in the ~2 - 11 μm range where the insulating phase of VO2 has relatively low optical loss. We found that the macroscopic optical properties of VO2 are much more robust to sample-to-sample variation compared to the electrical properties, making the refractive-index datasets from this article broadly useful for modeling and design of VO2-based optical and optoelectronic components.
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Submitted 8 January, 2019;
originally announced January 2019.
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Strain and Band-Gap Engineering in Ge-Sn Alloys via P Do**
Authors:
Slawomir Prucnal,
Yonder Berencén,
Mao Wang,
Jörg Grenzer,
Matthias Voelskow,
Rene Hübner,
Yuji Yamamoto,
Alexander Scheit,
Florian Bärwolf,
Vitaly Zviagin,
Rüdiger Schmidt-Grund,
Marius Grundmann,
Jerzy Żuk,
Marcin Turek,
Andrzej Droździel,
Krzysztof Pyszniak,
Robert Kudrawiec,
Maciej P. Polak,
Lars Rebohle,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of…
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Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
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Submitted 7 January, 2019;
originally announced January 2019.
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Exceptional points in anisotropic planar microcavities
Authors:
Steffen Richter,
Tom Michalsky,
Chris Sturm,
Bernd Rosenow,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
Planar microcavities allow the control and manipulation of spin-polarization, manifested in phenomena like the optical spin Hall effect due to the intrinsic polarization mode splitting. Here, we study a transparent microcavity with broken rotational symmetry, realized by aligning the optical axis of a uniaxial cavity material in the cavity plane. We demonstrate that the in-plane optical anisotropy…
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Planar microcavities allow the control and manipulation of spin-polarization, manifested in phenomena like the optical spin Hall effect due to the intrinsic polarization mode splitting. Here, we study a transparent microcavity with broken rotational symmetry, realized by aligning the optical axis of a uniaxial cavity material in the cavity plane. We demonstrate that the in-plane optical anisotropy gives rise to exceptional points in the dispersion relation, which occur pair-wise, are circularly polarized, and are cores of polarization vortices. These exceptional points are a result of the non-Hermitian character of the system, and are in close relationship to singular optical axes in absorptive biaxial systems.
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Submitted 24 September, 2016;
originally announced September 2016.
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Raman tensor elements of $β\text{-Ga}_2\text{O}_3$
Authors:
Christian Kranert,
Chris Sturm,
Rüdiger Schmidt-Grund,
Marius Grundmann
Abstract:
The Raman spectrum and particularly the Raman scattering intensities of monoclinic $β\text{-Ga}_2\text{O}_3$ are investigated by experiment and theory. The low symmetry of $β\text{-Ga}_2\text{O}_3$ results in a complex dependence of the Raman intensity for the individual phonon modes on the scattering geometry which is additionally affected by birefringence. We measured the Raman spectra in depend…
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The Raman spectrum and particularly the Raman scattering intensities of monoclinic $β\text{-Ga}_2\text{O}_3$ are investigated by experiment and theory. The low symmetry of $β\text{-Ga}_2\text{O}_3$ results in a complex dependence of the Raman intensity for the individual phonon modes on the scattering geometry which is additionally affected by birefringence. We measured the Raman spectra in dependence on the polarization direction for backscattering on three crystallographic planes of $β\text{-Ga}_2\text{O}_3$ and modeled these dependencies using a modified Raman tensor formalism which takes birefringence into account. The spectral position of all 15 Raman-active phonon modes and the Raman tensor elements of 13 modes were determined and are compared to results from ab-initio calculations.
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Submitted 23 June, 2016;
originally announced June 2016.
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Coexistence of strong and weak coupling in ZnO nanowire cavities
Authors:
Tom Michalsky,
Helena Franke,
Robert Buschlinger,
Ulf Peschel,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
We present a high quality two-dimensional cavity structure based on ZnO nanowires coated with concentrical Bragg reflectors. The spatial mode distribution leads to the simultaneous appearance of the weak and strong coupling regime even at room temperature. Photoluminescence measurements agree with FDTD simulations. Furthermore the ZnO core nanowires allow for the observation of middle polariton br…
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We present a high quality two-dimensional cavity structure based on ZnO nanowires coated with concentrical Bragg reflectors. The spatial mode distribution leads to the simultaneous appearance of the weak and strong coupling regime even at room temperature. Photoluminescence measurements agree with FDTD simulations. Furthermore the ZnO core nanowires allow for the observation of middle polariton branches between the A- and B-exciton ground state resonances. Further, lasing emission up to room temperature is detected in excitation dependent photoluminescence measurements.
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Submitted 22 February, 2016;
originally announced February 2016.
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Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga$_2$O$_3$
Authors:
Chris Sturm,
Rüdiger Schmidt-Grund,
Christian Kranert,
Jürgen Furthmüller,
Friedhelm Bechstedt,
Marius Grundmann
Abstract:
We apply a generalized model for the determination and analysis of the dielectric function of optically anisotropic materials with colour dispersion to phonon modes and show that it can also be generalized to excitonic polarizabilities and electronic band-band transitions. We take into account that the tensor components of the dielectric function within the cartesian coordinate system are not inde…
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We apply a generalized model for the determination and analysis of the dielectric function of optically anisotropic materials with colour dispersion to phonon modes and show that it can also be generalized to excitonic polarizabilities and electronic band-band transitions. We take into account that the tensor components of the dielectric function within the cartesian coordinate system are not independent from each other but are rather projections of the polarization of dipoles oscillating along directions defined by the, non-cartesian, crystal symmetry and polarizability. The dielectric function is then composed of a series of oscillators pointing in different directions. The application of this model is exemplarily demonstrated for monoclinic ($β$-phase) Ga$_2$O$_3$ bulk single crystals. Using this model, we are able to relate electronic transitions observed in the dielectric function to atomic bond directions and orbitals in the real space crystal structure. For thin films revealing rotational domains we show that the optical biaxiality is reduced to uniaxial optical response.
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Submitted 28 January, 2016;
originally announced January 2016.
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Carrier density driven lasing dynamics in ZnO nanowires
Authors:
Marcel Wille,
Chris Sturm,
Tom Michalsky,
Robert Röder,
Carsten Ronning,
Rüdiger Schmidt-Grund,
Marius Grundmann
Abstract:
We report on the temporal lasing dynamics of high quality ZnO nanowires using time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature…
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We report on the temporal lasing dynamics of high quality ZnO nanowires using time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature dependent emission onset-time ($t_{\text{on}}$) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.
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Submitted 15 January, 2016;
originally announced January 2016.
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Dielectric tensor of monoclinic Ga$_2$O$_3$ single crystals in the spectral range $0.5 - 8.5\,$eV
Authors:
Chris Sturm,
Jürgen Furthmüller,
Friedhelm Bechstedt,
Rüdiger Schmidt-Grund,
Marius Grundmann
Abstract:
The dielectric tensor of $β$-Ga$_2$O$_3$ was determined by generalized spectroscopic ellipsometry in a wide spectral range from $0.5\,\mathrm{eV}$ to $8.5\,\mathrm{eV}$ as well as by calculation including quasiparticle bands and excitonic effects. The dielectric tensors obtained by both methods are in excellent agreement with each other and the observed transitions in the dielectric function are a…
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The dielectric tensor of $β$-Ga$_2$O$_3$ was determined by generalized spectroscopic ellipsometry in a wide spectral range from $0.5\,\mathrm{eV}$ to $8.5\,\mathrm{eV}$ as well as by calculation including quasiparticle bands and excitonic effects. The dielectric tensors obtained by both methods are in excellent agreement with each other and the observed transitions in the dielectric function are assigned to the corresponding valence bands. It is shown that the off-diagonal element of the dielectric tensor reaches values up to $|\varepsilon_{xz} | \approx 0.30 $ and cannot be neglected. Even in the transparent spectral range where it is quite small ($|\varepsilon_{xz} | < 0.02 $) it causes a rotation of the dielectric axes around the symmetry axis of up to $20^\circ$.
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Submitted 20 July, 2015;
originally announced July 2015.
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Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides
Authors:
Vitaly Zviagin,
Peter Richter,
Tammo Böntgen,
Michael Lorenz,
Michael Ziese,
Dietrich R. T. Zahn,
Georgeta Salvan,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
Co$_3$O$_4$, ZnFe$_2$O$_4$, CoFe$_2$O$_4$, ZnCo$_2$O$_4$, and Fe$_3$O$_4$ thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5…
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Co$_3$O$_4$, ZnFe$_2$O$_4$, CoFe$_2$O$_4$, ZnCo$_2$O$_4$, and Fe$_3$O$_4$ thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5 eV, is compared with the magneto-optical response of the dielectric tensor, investigated by magneto-optical Kerr effect (MOKE) spectroscopy in the spectral range from 1.7 eV to 5.5 eV with an applied magnetic field of 1.7 T. Crystal field, inter-valence and inter-sublattice charge transfer transitions, and transitions from O$_{2p}$ to metal cation 3d or 4s bands are identified in both the principal diagonal elements and the magneto-optically active off-diagonal elements of the dielectric tensor. Depending on the degree of cation disorder, resulting in local symmetry distortion, the magneto-optical response is found to be strongest for high crystal quality inverse spinels and for disordered normal spinel structure, contrary to the first principle studies of CoFe$_2$O$_4$ and ZnFe$_2$O$_4$. The results presented provide a basis for deeper understanding of light-matter interaction in this material system that is of vital importance for device-related phenomena and engineering.
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Submitted 1 October, 2015; v1 submitted 29 April, 2015;
originally announced May 2015.
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Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO$_3$
Authors:
Steffen Richter,
Stefan G. Ebbinghaus,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
Hexagonal YMnO$_3$ is well known for the co-occurrence of ferroelectricity and antiferromagnetism at low temperatures. Using temperature-dependent spectroscopic ellipsometry at an $a$-plane oriented single crystal, we show how the dielectric function is affected by the magnetic order transition at the Néel temperature. We focus especially on the pronounced charge transfer transitions around (1.6-1…
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Hexagonal YMnO$_3$ is well known for the co-occurrence of ferroelectricity and antiferromagnetism at low temperatures. Using temperature-dependent spectroscopic ellipsometry at an $a$-plane oriented single crystal, we show how the dielectric function is affected by the magnetic order transition at the Néel temperature. We focus especially on the pronounced charge transfer transitions around (1.6-1.7)eV which are strongly connected to Mn 3$d$ electrons. If described with a Bose-Einstein model, the temperature dependency of their energy and broadening is characterized by effective phonon energies not larger than 8meV. We argue that this is a hint for the occurrence of a soft phonon mode related to the antiferromagnetic phase transition. This is observed in both tensor components of the dielectric function, parallel and perpendicular to the crystallographic $c$-axis. Furthermore, a suitable parametrization for the uniaxial dielectric function is presented for the NIR-VUV spectral range. The broad transitions at energies higher than a critical point-like bandgap do not show a clear temperature dependence. We also observe some weak discrete absorption features around the strong charge transfer transitions with energies matching well to low-temperature photoluminescence signals.
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Submitted 11 March, 2015;
originally announced March 2015.
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Discrete relaxation of exciton-polaritons in an inhomogeneous potential
Authors:
T. Michalsky,
H. Franke,
C. Sturm,
M. Grundmann,
R. Schmidt-Grund
Abstract:
We present indications, that the wave function-stiffness condition during energy-relaxation as observed in single-phase state quantum systems manifests also in a single particle ensemble. This is demonstrated for exciton-polaritons in the strong coupling regime in a ZnO-based microcavity at T = 10 K for non-resonant excitation. It is well known that the pump-induced spatially inhomogeneous backgro…
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We present indications, that the wave function-stiffness condition during energy-relaxation as observed in single-phase state quantum systems manifests also in a single particle ensemble. This is demonstrated for exciton-polaritons in the strong coupling regime in a ZnO-based microcavity at T = 10 K for non-resonant excitation. It is well known that the pump-induced spatially inhomogeneous background potential leads to nearly equally spaced energy levels in the k-space distribution for propagating polariton Bose-Einstein condensates. Surprisingly this particular pattern is also observable for uncondensed exciton-polaritons.
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Submitted 12 January, 2015;
originally announced January 2015.
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Room-temperature condensation in whispering gallery microresonators assisted by longitudinal optical phonons
Authors:
Christof P. Dietrich,
Rüdiger Schmidt-Grund,
Tom Michalsky,
Martin Lange,
Marius Grundmann
Abstract:
We report condensation of hexagonal whispering gallery modes (WGM) at room temperature in ZnO microwires that embody nearly perfect polygonal whispering gallery microresonators. The condensate regime is achieved in the UV spectral range only at energies below the first longitudinal optical (LO) phonon replica of the free ZnO A-exciton transition and at non-zero wave vectors. We demonstrate that th…
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We report condensation of hexagonal whispering gallery modes (WGM) at room temperature in ZnO microwires that embody nearly perfect polygonal whispering gallery microresonators. The condensate regime is achieved in the UV spectral range only at energies below the first longitudinal optical (LO) phonon replica of the free ZnO A-exciton transition and at non-zero wave vectors. We demonstrate that the multimodality of the WGM system and the high population of free excitons and phonons with various momenta strongly enhance the probability of an interaction of quasiparticles of the cavity exciton-photon system with LO phonons. We further examine the far-field mode pattern of lasing WGM and demonstrate their spatial coherence.
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Submitted 6 January, 2015;
originally announced January 2015.
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Cavity Polariton Condensate in a Disordered Environment
Authors:
Martin Thunert,
Alexander Janot,
Helena Franke,
Chris Sturm,
Tom Michalsky,
María Dolores Martín,
Luis Viña,
Bernd Rosenow,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
We report on the influence of disorder on an exciton-polariton condensate in a ZnO based bulk planar microcavity and compare experimental results with a theoretical model for a non-equilibrium condensate. Experimentally, we detect intensity fluctuations within the far-field emission pattern even at high condensate densities which indicates a significant impact of disorder. We show that these effec…
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We report on the influence of disorder on an exciton-polariton condensate in a ZnO based bulk planar microcavity and compare experimental results with a theoretical model for a non-equilibrium condensate. Experimentally, we detect intensity fluctuations within the far-field emission pattern even at high condensate densities which indicates a significant impact of disorder. We show that these effects rely on the driven dissipative nature of the condensate and argue that they can be accounted for by spatial phase inhomogeneities induced by disorder, which occur even for increasing condensate densities realized in the regime of high excitation power. Thus, non-equilibrium effects strongly suppress the stabilization of the condensate against disorder, contrarily to what is expected for equilibrium condensates in the high density limit. Numerical simulations based on our theoretical model reproduce the experimental data.
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Submitted 16 November, 2015; v1 submitted 30 December, 2014;
originally announced December 2014.
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Phonon-Assisted Lasing in ZnO Microwires at Room Temperature
Authors:
T. Michalsky,
M. Wille,
C. P. Dietrich,
R. Röder,
C. Ronning,
R. Schmidt-Grund,
M. Grundmann
Abstract:
We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets are prerequisite. Above the excitation threshold power $P_{\textit{Th}}$ of typically $100\,kW/cm^2$, the recombination of free excitons under emission of two lo…
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We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets are prerequisite. Above the excitation threshold power $P_{\textit{Th}}$ of typically $100\,kW/cm^2$, the recombination of free excitons under emission of two longitudinal optical phonons provides sufficient gain to overcome all losses in the microresonator and to result in laser oscillation. This threshold behavior is accompanied by a distinct change of the far and near field emission patterns, revealing the WGM related nature of the lasing modes. The spectral evolution as well as the characteristic behavior of the integrated photoluminescence intensity versus the excitation power unambiguously prove laser operation. Polarization-resolved measurements show that the laser emission is linear polarized perpendicular to the microwire axis (TE).
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Submitted 14 November, 2014; v1 submitted 29 October, 2014;
originally announced October 2014.
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Electronic excitations and structure of Li2IrO3 thin films grown on ZrO$_{2}$:Y (001) substrates
Authors:
Marcus Jenderka,
Rüdiger Schmidt-Grund,
Marius Grundmann,
Michael Lorenz
Abstract:
Thin films are a prerequisite for application of the emergent exotic ground states in iridates that result from the interplay of strong spin-orbit coupling and electronic correlations. We report on pulsed laser deposition of Li$_{2}$IrO$_{3}$ films on ZrO$_{2}$:Y(001) single crystalline substrates. X-ray diffraction confirms preferential (001) and (10-1) out-of-plane crystalline orientations with…
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Thin films are a prerequisite for application of the emergent exotic ground states in iridates that result from the interplay of strong spin-orbit coupling and electronic correlations. We report on pulsed laser deposition of Li$_{2}$IrO$_{3}$ films on ZrO$_{2}$:Y(001) single crystalline substrates. X-ray diffraction confirms preferential (001) and (10-1) out-of-plane crystalline orientations with well defined in-plane orientation. Resistivity between 35 and 300 K is dominated by a three-dimensional variable range hop** mechanism. The dielectric function is determined by means of spectroscopic ellipsometry and, complemented by Fourier transform infrared transmission spectroscopy, reveals a small optical gap of $\approx$ 300 meV, a splitting of the $5d$-$t_{2g}$ manifold, and several in-gap excitations attributed to phonons and possibly magnons.
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Submitted 25 February, 2015; v1 submitted 14 July, 2014;
originally announced July 2014.
