Path integral simulation of exchange interactions in CMOS spin qubits
Authors:
Jesús D. Cifuentes,
Philip Y. Mai,
Frédéric Schlattner,
H. Ekmel Ercan,
MengKe Feng,
Christopher C. Escott,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interaction…
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The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interactions of three-dimensional electrically defined quantum dots. We apply this model to silicon metal-oxide-semiconductor (MOS) devices and we benchmark our method against well-tested full configuration interaction (FCI) simulations. As an application, we study the impact of a single charge trap on two exchanging dots, opening the possibility of using this code to test the tolerance to disorder of CMOS devices. This algorithm provides an accurate description of this system, setting up an initial step to integrate PIMC algorithms into development of semiconductor quantum computers.
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Submitted 3 August, 2023; v1 submitted 7 July, 2023;
originally announced July 2023.
Bounds to electron spin qubit variability for scalable CMOS architectures
Authors:
Jesús D. Cifuentes,
Tuomo Tanttu,
Will Gilbert,
Jonathan Y. Huang,
Ensar Vahapoglu,
Ross C. C. Leon,
Santiago Serrano,
Dennis Otter,
Daniel Dunmore,
Philip Y. Mai,
Frédéric Schlattner,
MengKe Feng,
Kohei Itoh,
Nikolay Abrosimov,
Hans-Joachim Pohl,
Michael Thewalt,
Arne Laucht,
Chih Hwan Yang,
Christopher C. Escott,
Wee Han Lim,
Fay E. Hudson,
Rajib Rahman,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, co…
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Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and develo** theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.
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Submitted 5 July, 2024; v1 submitted 26 March, 2023;
originally announced March 2023.
