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Ground state oxygen holes and the metal-insulator transition in the negative charge transfer rare-earth nickelates
Authors:
Valentina Bisogni,
Sara Catalano,
Robert J. Green,
Marta Gibert,
Raoul Scherwitzl,
Yaobo Huang,
Vladimir N. Strocov,
Pavlo Zubko,
Shadi Balandeh,
Jean-Marc Triscone,
George Sawatzky,
Thorsten Schmitt
Abstract:
The metal-insulator transitions and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here, taking a NdNiO3 thin film as a representative example, we utilize a combination of x-ray absorption and resonant inelastic x-ray scattering (RIXS) spectroscop…
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The metal-insulator transitions and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here, taking a NdNiO3 thin film as a representative example, we utilize a combination of x-ray absorption and resonant inelastic x-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of the rare-earth nickelates. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for the abundance of oxygen 2p holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that these distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy, in line with recent models interpreting the metal to insulator transition in terms of bond disproportionation.
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Submitted 22 July, 2016;
originally announced July 2016.
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Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces
Authors:
S. Catalano,
M. Gibert,
V. Bisogni,
F. He,
R. Sutarto,
M. Viret,
P. Zubko,
R. Scherwitzl,
G. A. Sawatzky,
T. Schmitt,
J. -M. Triscone
Abstract:
Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries a…
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Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)_pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
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Submitted 4 May, 2015;
originally announced May 2015.
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Spatially resolved ultrafast magnetic dynamics launched at a complex-oxide hetero-interface
Authors:
M. Först,
A. D. Caviglia,
R. Scherwitzl,
R. Mankowsky,
P. Zubko,
V. Khanna,
H. Bromberger,
S. B. Wilkins,
Y. -D. Chuang,
W. S. Lee,
W. F. Schlotter,
J. J. Turner,
G. L. Dakovski,
M. P. Minitti,
J. Robinson,
S. R. Clark,
D. Jaksch,
J. -M. Triscone,
J. P. Hill,
S. S. Dhesi,
A. Cavalleri
Abstract:
Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting…
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Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting in a NdNiO3 film across a hetero-interface. Femtosecond Resonant Soft X-ray Diffraction is used to determine the spatial and temporal evolution of the magnetic disordering. We observe a magnetic melt front that grows from the substrate interface into the film, at a speed that suggests electronically driven propagation. Light control and ultrafast phase front propagation at hetero-interfaces may lead to new opportunities in optomagnetism, for example by driving domain wall motion to transport information across suitably designed devices.
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Submitted 4 May, 2015;
originally announced May 2015.
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Electronic Transitions in Strained SmNiO_3 Thin Films
Authors:
S. Catalano,
M. Gibert,
V. Bisogni,
O. Peil,
F. He,
R. Sutarto,
M. Viret,
P. Zubko,
R. Scherwitzl,
A. Georges,
G. A. Sawatzky,
T. Schmitt,
J. -M. Triscone
Abstract:
Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Néel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_Néel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_Néel=T_MI is a…
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Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Néel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_Néel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_Néel=T_MI is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO_3 lattice leads to the stabilization of a single metallic paramagnetic phase.
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Submitted 20 April, 2015;
originally announced April 2015.
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Unusual temperature dependence of the spectral weight near the Fermi level of NdNiO3 thin films
Authors:
E. F. Schwier,
R. Scherwitzl,
Z. Vydrova,
M.,
Garcia-Fernandez,
M. Gibert,
P. Zubko,
M. G. Garnier,
J. -M. Triscone,
P. Aebi
Abstract:
We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes…
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We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes of spectral loss close to the Fermi level. The temperature evolution of one regime is found to be independent from the MIT.
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Submitted 20 November, 2012;
originally announced November 2012.
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Ultrafast strain engineering in complex oxide heterostructures
Authors:
A. D. Caviglia,
R. Scherwitzl,
P. Popovich,
W. Hu,
H. Bromberger,
R. Singla,
M. Mitrano,
M. C. Hoffmann,
S. Kaiser,
P. Zubko,
S. Gariglio,
J. -M. Triscone,
M. Först,
A. Cavalleri
Abstract:
We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interfa…
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We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.
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Submitted 14 November, 2011;
originally announced November 2011.
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Metal-insulator transition in ultrathin LaNiO3 films
Authors:
R. Scherwitzl,
S. Gariglio,
M. Gabay,
P. Zubko,
M. Gibert,
J. -M. Triscone
Abstract:
Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Rem…
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Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.
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Submitted 9 June, 2011; v1 submitted 26 January, 2011;
originally announced January 2011.
