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Single-crystalline PbTe film growth through reorientation
Authors:
Jason Jung,
Sander G. Schellingerhout,
Orson A. H. van der Molen,
Wouter H. J. Peeters,
Marcel A. Verheijen,
Erik P. A. M. Bakkers
Abstract:
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principle growth modes are identified for material combinations with large lattice mismatch, Volmer-Weber and Stranski-Krastanov. Both lead to the formation of three-dimensional islands, hampering the growth of flat defect-free thin films. This limits the number of viable material combinations.…
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Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principle growth modes are identified for material combinations with large lattice mismatch, Volmer-Weber and Stranski-Krastanov. Both lead to the formation of three-dimensional islands, hampering the growth of flat defect-free thin films. This limits the number of viable material combinations. Here, we report a distinct growth mode found in molecular beam epitaxy of PbTe on InP initiated by pre-growth surface treatments. Early nucleation forms islands analogous to the Volmer-Weber growth mode, but film closure exhibits a flat surface with atomic terracing. Remarkably, despite multiple distinct crystal orientations found in the initial islands, the final film is single-crystalline. This is possible due to a reorientation process occurring during island coalescence, facilitating high quality heteroepitaxy despite the large lattice mismatch, difference in crystal structures and diverging thermal expansion coefficients of PbTe and InP. This growth mode offers a new strategy for the heteroepitaxy of dissimilar materials and expands the realm of possible material combinations.
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Submitted 20 September, 2022;
originally announced September 2022.
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Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots
Authors:
S. C. ten Kate,
M. F. Ritter,
A. Fuhrer,
J. Jung,
S. G. Schellingerhout,
E. P. A. M. Bakkers,
H. Riel,
F. Nichele
Abstract:
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-o…
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PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.
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Submitted 13 May, 2022;
originally announced May 2022.
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Spin and Orbital Spectroscopy in the Absence of Coulomb Blockade in Lead Telluride Nanowire Quantum Dots
Authors:
M. Gomanko,
E. J. de Jong,
Y. Jiang,
S. G. Schellingerhout,
E. P. A. M. Bakkers,
S. M. Frolov
Abstract:
We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of order 1000, we do not observe Coulomb blockade which typically obfuscates the orbital and spin spectra. We extract large and highly anisotropic effective Lande g-…
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We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of order 1000, we do not observe Coulomb blockade which typically obfuscates the orbital and spin spectra. We extract large and highly anisotropic effective Lande g-factors, in the range 20-44. The absence of Coulomb blockade allows direct readout, at zero source-drain bias, of spin-orbit hybridization energies of up to 600 microelectronvolt. These spin properties make PbTe nanowires, the recently synthesized members of group IV-VI materials family, attractive as a materials platform for quantum technology, such as spin and topological qubits.
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Submitted 22 May, 2022; v1 submitted 25 November, 2021;
originally announced November 2021.
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Growth of PbTe nanowires by Molecular Beam Epitaxy
Authors:
Sander G. Schellingerhout,
Eline J. de Jong,
Maksim Gomanko,
Xin Guan,
Yifan Jiang,
Max S. M. Hoskam,
Sebastian Koelling,
Oussama Moutanabbir,
Marcel A. Verheijen,
Sergey M. Frolov,
Erik P. A. M. Bakkers
Abstract:
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can hos…
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Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of electron spins and other quantum degrees of freedom. Here, we report the fabrication of PbTe nanowires by molecular beam epitaxy. We achieve defect-free single crystalline PbTe with large aspect ratios up to 50 suitable for quantum devices. Furthermore, by fabricating a single nanowire field effect transistor, we attain bipolar transport, extract the bandgap and observe Fabry-Perot oscillations of conductance, a signature of quasiballistic transmission.
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Submitted 25 October, 2021;
originally announced October 2021.
