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Connection between partial pressure, volatility, and the Soret effect elucidated using simulations of non-ideal supercritical fluid mixtures
Authors:
Brandon Fields,
Patrick K. Schelling
Abstract:
Building on recent simulation work, it is demonstrated using molecular-dynamics (MD) simulations of two-component fluid mixtures that the chemical contribution to the Soret effect in two-component non-ideal fluid mixtures arises due to differences in how the partial pressures of the components respond to temperature and density gradients. Further insight is obtained by reviewing the connection bet…
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Building on recent simulation work, it is demonstrated using molecular-dynamics (MD) simulations of two-component fluid mixtures that the chemical contribution to the Soret effect in two-component non-ideal fluid mixtures arises due to differences in how the partial pressures of the components respond to temperature and density gradients. Further insight is obtained by reviewing the connection between activity and deviations from Raoult's law in the measurement of the vapor pressure of a liquid mixture. A new parameter $γ_{s}^{S}$, defined in a manner similar to the activity coefficient, is used to characterize differences deviations from ``ideal'' behavior. It is then shown that the difference $γ_{2}^{S}-γ_{1}^{S}$ is predictive of the sign of the Soret coefficient and is correlated to its magnitude. We hence connect the Soret effect to the relative volatility of the components of a fluid mixture, with the more volatile component enriched in the low-density, high-temperature region, and the less volatile component enriched in the high-density, low-temperature region. Because $γ_{s}^{S}$ is closely connected to the activity coefficient, this suggests the possibility that measurement of partial vapor pressures might be used to indirectly determine the Soret coefficient. It is proposed that the insight obtained here is quite general and should be applicable to a wide range of materials systems. An attempt is made to understand how these results might apply to other materials systems including interstitials in solids and multicomponent solids with interdiffusion occurring via a vacancy mechanism.
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Submitted 2 May, 2024; v1 submitted 30 October, 2023;
originally announced October 2023.
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Physical mechanisms of the Soret effect in binary Lennard-Jones liquids elucidated with thermal-response calculations
Authors:
Patrick K. Schelling
Abstract:
The Soret effect is the tendency of fluid mixtures to exhibit concentration gradients in the presence of a temperature gradient. Using molecular-dynamics simulation of two-component Lennard-Jones liquids, it is demonstrated that spatially-sinusoidal heat pulses generate both temperature and pressure gradients. Over short timescales, the dominant effect is the generation of compressional waves whic…
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The Soret effect is the tendency of fluid mixtures to exhibit concentration gradients in the presence of a temperature gradient. Using molecular-dynamics simulation of two-component Lennard-Jones liquids, it is demonstrated that spatially-sinusoidal heat pulses generate both temperature and pressure gradients. Over short timescales, the dominant effect is the generation of compressional waves which dissipate over time as the system approaches mechanical equilibrium. The approach to mechanical equilibrium is also characterized by a decrease in particle density in the high-temperature region, and an increase in particle density in the low-temperature region. It is demonstrated that concentration gradients develop rapidly during the propagation of compressional waves through the liquid. Over longer timescales, heat conduction occurs to return the system to thermal equilibrium, with the particle current acting to restore a more uniform particle density. It is shown that the Soret effect arises due to the fact that the two components of the fluid exhibit a different response to pressure gradients. First, the so-called isotope effect occurs because light atoms tend to respond more rapidly to the evolving conditions. In this case, there appears to be a connection to previous observations of fast sound in binary fluids. Second, it is shown that the partial pressures of the two components in equilibrium, and more directly the relative magnitudes of their derivatives with respect to temperature and density, determine which species accumulates in the high- and low-temperature regions. In the conditions simulated here, the dependence of the partial pressure on density gradients is larger than the the dependence on temperature gradients.
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Submitted 29 December, 2022; v1 submitted 16 November, 2022;
originally announced November 2022.
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Analysis of ballistic transport and resonance in the $α$-Fermi-Pasta-Ulam-Tsingou model
Authors:
Nathaniel Bohm,
Patrick K. Schelling
Abstract:
Ballistic transport and resonance phenomena are elucidated in the one-dimensional $α$-Fermi-Pasta-Ulam-Tsingou (FPUT) model using an approach of computing thermal response functions. The existence of periodic oscillations in spatially sinusoidal temperature profiles seen in previous studies is confirmed. However, the results obtained using response functions enable a more complete understanding. I…
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Ballistic transport and resonance phenomena are elucidated in the one-dimensional $α$-Fermi-Pasta-Ulam-Tsingou (FPUT) model using an approach of computing thermal response functions. The existence of periodic oscillations in spatially sinusoidal temperature profiles seen in previous studies is confirmed. However, the results obtained using response functions enable a more complete understanding. In particular, it is shown that resonance involves beats between normal modes which tend to reinforce in a one-dimensional chain. Anharmonic scattering acts to destroy phase coherence across the statistical ensemble, and with increasing anharmonicity, transport is driven towards the diffusive regime. These results provide additional insight into anomalous heat transport in low-dimensional systems. Normal-mode scattering is also explored using time correlation functions. Interestingly, these calculations, in addition to demonstrating loss of phase coherence across an ensemble of simulations, appear to show evidence of so-called q-breathers in conditions of strong anharmonicity. Finally, we describe how the approach outlined here could be developed to include quantum statistics and also also first-principles estimates of phonon scattering rates to elucidate second sound and ballistic transport in realistic materials at low temperatures.
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Submitted 22 July, 2022; v1 submitted 4 May, 2022;
originally announced May 2022.
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Dissipation and adhesion hysteresis between (010) forsterite surfaces using molecular-dynamics simulation and the Jarzynski equality
Authors:
Baochi Doan,
Patrick K. Schelling
Abstract:
Dissipation and adhesion are important in many areas of materials science, including friction and lubrication, cold spray deposition, and micro-electromechanical systems (MEMS). Another interesting problem is the adhesion of mineral grains during the early stages of planetesimal formation in the early solar system. Molecular-dynamics (MD) simulation has often been used to elucidate dissipative pro…
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Dissipation and adhesion are important in many areas of materials science, including friction and lubrication, cold spray deposition, and micro-electromechanical systems (MEMS). Another interesting problem is the adhesion of mineral grains during the early stages of planetesimal formation in the early solar system. Molecular-dynamics (MD) simulation has often been used to elucidate dissipative properties, most often in the simulation of sliding friction. In this paper, we demonstrate how the reversible and irreversible work associated with interactions between planar surfaces can be calculated using the dynamical contact simulation approach based on MD and empirical potentials. Moreover, it is demonstrated how the approach can obtain the free-energy $ΔA(z)$ as a function of separation between two slabs using the Jarzynksi equality applied to an ensemble of trajectories which deviate significantly from equilibrium. Furthermore, the dissipative work can also be obtained using this method without the need to compute an entire cycle from approach to retraction. It is expected that this technique might be used to efficiently compute dissipative properties which might enable the use of more accurate approaches including density-functional theory. In this paper, we present results obtained for forsterite surfaces both with and without MgO-vacancy surface defects. It is shown that strong dissipation is possible when MgO-vacancy defects are present. The mechanism for strong dissipation is connected to the tendency of less strongly-bound surface units to undergo large displacements including mass transfer between the two surfaces. Systems with strong dissipation tend to exhibit a long-tailed distribution rather than the Gaussian distribution often anticipated in near-equilibrium applications of the JE.
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Submitted 4 May, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
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Resistivity size effect due to surface steps on ruthenium thin films computed with a realistic tight-binding model
Authors:
W. E. Richardson,
E. R. Mucciolo,
P. K. Schelling
Abstract:
A realistic tight-binding model is developed and employed to elucidate the resistivity size effect due to steps on Ru thin films. The resistivity of two different film orientations, $(0001)$ and $(1 \bar{1}00)$, is computed for transport along a $[1 1 \bar{2} 0]$ direction both for smooth surfaces and for surfaces with monolayer-high steps. In the case of smooth films, the systems are also studied…
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A realistic tight-binding model is developed and employed to elucidate the resistivity size effect due to steps on Ru thin films. The resistivity of two different film orientations, $(0001)$ and $(1 \bar{1}00)$, is computed for transport along a $[1 1 \bar{2} 0]$ direction both for smooth surfaces and for surfaces with monolayer-high steps. In the case of smooth films, the systems are also studied using solutions to the Boltzmann transport equation (BTE). Interestingly, the resistivity of $(1 \bar{1}00)$ surfaces exhibits a significant size effect even in the absence of surface steps. When monolayer-high steps are spaced $\sim 10$ nm apart, the resistivity is shown to increase due to scattering from the steps. However, only a small increase was found which cannot explain the large effect seen in recent experiments with Ru thin films. This highlights the need for further elucidation of the resistivity size effect. Theoretical analysis suggest that films made from materials with a relatively large ballistic conductance per area like Ru should exhibit a reduced resistivity size effect. This result points to Ru as a promising interconnect material. Finally, because a very efficient algorithm for computing resistivity based on the kernel polynomial method (KPM) is used, the approach fulfills a need for realistic models that can span length scales directly relevant to experimental results. The calculations described here include films approaching $5$ nm in thickness, with in-plane distances up to $\sim 160$ nm and $3.8\times10^{5}$ atomic sites.
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Submitted 20 November, 2021; v1 submitted 20 August, 2021;
originally announced August 2021.
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Non-local linear-response functions for thermal transport computed with equilibrium molecular-dynamics simulation
Authors:
Kevin Fernando,
Patrick K. Schelling
Abstract:
We establish an approach to compute linear-response functions to elucidate heat waves and non-local thermal transport. The theory is able to describe the response of a system to external heat sources that are nonuniform in space and time. The response functions are computed using equilibrium molecular-dynamics simulations of an Ar crystal modeled using the standard Lennard-Jones potential. It is s…
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We establish an approach to compute linear-response functions to elucidate heat waves and non-local thermal transport. The theory is able to describe the response of a system to external heat sources that are nonuniform in space and time. The response functions are computed using equilibrium molecular-dynamics simulations of an Ar crystal modeled using the standard Lennard-Jones potential. It is shown that for low temperatures and short length scales, transport can be partially or even completely ballistic, with the response primarily limited by the group velocity of lattice waves. By contrast, at longer length scales and higher temperatures, the response functions correspond more closely to diffusive transport characteristic of Fourier's law. It is also shown how the effective thermal conductivity can be determined in a partially-ballistic regime. The results demonstrate the known reduction in the effective thermal conductivity observed when system dimensions are smaller than the mean-free path for lattice waves. Finally, we show how determination of the relevant response functions can be used to model heating of a crystal without requiring additional atomic-scale simulations. Differences between computed results and predictions from Fourier's law represent wave-like, partially-ballistic transport.
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Submitted 2 November, 2021; v1 submitted 16 July, 2020;
originally announced July 2020.
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Epitaxial metals for interconnects beyond Cu
Authors:
Katayun Barmak,
Sameer Ezzat,
Ryan Gusle,
Atharv Jog,
Sit Kerdsongpanya,
Asim Khanya,
Erik Milosevic,
William Richardson,
Kadir Sentosun,
Amirali Zangiabadi,
Daniel Gall,
William E. Kaden,
Eduardo R. Mucciolo,
Patrick K. Schelling,
Alan C. West,
Kevin R. Coffey
Abstract:
The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron…
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The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron microscopy evidences threading and misfit dislocations, stacking faults and deformation twins. Exposure of Co films to ambient air, and the deposition of oxide layers of SiO2, MgO, Al2O3 and Cr2O3 on Ru degrade the surface specularity of the metallic layer. However, for the Ru films, annealing in a reducing ambient restores the surface specularity. Epitaxial electrochemical deposition of Co on epitaxially-deposited Ru layers is used as an example to demonstrate the feasibility of generating epitaxial interconnects for back-end of line structures. An electron transport model based on a tight-binding approach is described, with Ru interconnects used an example. The model allows conductivity to be computed for structures comprising large ensembles of atoms (10^5-10^6), scales linearly with system size and can also incorporate defects.
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Submitted 2 April, 2020;
originally announced April 2020.
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Dissipation and plastic deformation in collisions between metallic nanoparticles
Authors:
William C. Tucker,
Adrienne R. Dove,
Patrick K. Schelling
Abstract:
Collisions between amorphous Fe nanoparticles were studied using molecular-dynamics simulation. For head-on collisions of nanoparticles with radii $R =$ 1.4 nm, $R =$ 5.2 nm, and $R =$ 11 nm, sticking was observed at all simulated velocities. The results were compared to the description provided by the JKR model. It was found that strong disagreement exists between the predictions of JKR and the r…
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Collisions between amorphous Fe nanoparticles were studied using molecular-dynamics simulation. For head-on collisions of nanoparticles with radii $R =$ 1.4 nm, $R =$ 5.2 nm, and $R =$ 11 nm, sticking was observed at all simulated velocities. The results were compared to the description provided by the JKR model. It was found that strong disagreement exists between the predictions of JKR and the results of the molecular-dynamics simulation due to the presence of additional dissipative processes which strengthen sticking behavior. First, it is demonstrated that very strong dissipation into atomic vibrations occurs during the collision. The dissipation is strong enough to prevent significant rebound of the nanoparticles. Additionally, the morphology of the adhered nanoparticles includes a ``neck'' that increases in radius with increasing collision velocity which results in amplified irreversibility and adhesion. Approximate calculation of the stress during the collision indicates that stress levels are well above typical yield stress values even for low velocity collisions, consistent with the observation of plastic deformation. Furthermore, it is shown that for nanoparticles with $R \leq$ 11 nm, the dominance of surface attraction results in large effective collision velocities and plastic deformation. By obtaining scaling relations for computed quantities, predictions are made for larger nanoparticles up to $R$ $\sim$ 1 $μ$m. This work provides a new perspective on collisional dissipation and adhesion with an important connection to the modern understanding of tribology and friction.
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Submitted 4 February, 2019;
originally announced February 2019.
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Towards More Accurate Molecular Dynamics Calculation of Thermal Conductivity. Case Study: GaN Bulk Crystals
Authors:
X. W. Zhou,
S. Aubry,
R. E. Jones,
A. Greenstein,
P. K. Schelling
Abstract:
Significant differences exist among literature for thermal conductivity of various systems computed using molecular dynamics simulation. In some cases, unphysical results, for example, negative thermal conductivity, have been found. Using GaN as an example case and the direct non-equilibrium method, extensive molecular dynamics simulations and Monte Carlo analysis of the results have been carried…
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Significant differences exist among literature for thermal conductivity of various systems computed using molecular dynamics simulation. In some cases, unphysical results, for example, negative thermal conductivity, have been found. Using GaN as an example case and the direct non-equilibrium method, extensive molecular dynamics simulations and Monte Carlo analysis of the results have been carried out to quantify the uncertainty level of the molecular dynamics methods and to identify the conditions that can yield sufficiently accurate calculations of thermal conductivity. We found that the errors of the calculations are mainly due to the statistical thermal fluctuations. Extrapolating results to the limit of an infinite-size system tend to magnify the errors and occasionally lead to unphysical results. The error in bulk estimates can be reduced by performing longer time averages using properly selected systems over a range of sample lengths. If the errors in the conductivity estimates associated with each of the sample lengths are kept below a certain threshold, the likelihood of obtaining unphysical bulk values becomes insignificant. Using a Monte-Carlo approach developed here, we have determined the probability distributions for the bulk thermal conductivities obtained using the direct method. We also have observed a nonlinear effect that can become a source of significant errors. For the extremely accurate results presented here, we predict a [0001] GaN thermal conductivity of 185 $\rm{W/K \cdot m}$ at 300 K, 102 $\rm{W/K \cdot m}$ at 500 K, and 74 $\rm{W/K \cdot m}$ at 800 K. Using the insights obtained in the work, we have achieved a corresponding error level (standard deviation) for the bulk (infinite sample length) GaN thermal conductivity of less than 10 $\rm{W/K \cdot m}$, 5 $\rm{W/K \cdot m}$, and 15 $\rm{W/K \cdot m}$ at 300 K, 500 K, and 800 K respectively.
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Submitted 23 June, 2012;
originally announced June 2012.
