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Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen
Authors:
Judith Gabel,
Matthias Pickem,
Philipp Scheiderer,
Lenart Dudy,
Berengar Leikert,
Marius Fuchs,
Martin Stübinger,
Matthias Schmitt,
Julia Küspert,
Giorgio Sangiovanni,
Jan M. Tomczak,
Karsten Held,
Tien-Lin Lee,
Ralph Claessen,
Michael Sing
Abstract:
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that th…
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Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a cap** layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.
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Submitted 22 February, 2022;
originally announced February 2022.
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Hard x-ray angle-resolved photoemission from a buried high-mobility electron system
Authors:
Michael Zapf,
Matthias Schmitt,
Judith Gabel,
Philipp Scheiderer,
Martin Stübinger,
Berengar Leikert,
Giorgio Sangiovanni,
Lenart Dudy,
Sergii Chernov,
Sergey Babenkov,
Dmitry Vasilyev,
Olena Fedchenko,
Katerina Medjanik,
Yury Matveyev,
Andrei Gloskowski,
Christoph Schlueter,
Tien-Lin Lee,
Hans-Joachim Elmers,
Gerd Schönhense,
Michael Sing,
Ralph Claessen
Abstract:
Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by…
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Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.
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Submitted 20 September, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
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Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction
Authors:
M. Stübinger,
J. Gabel,
P. Scheiderer,
M. Zapf,
M. Schmitt,
P. Schütz,
B. Leikert,
J. Küspert,
M. Kamp,
P. K. Thakur,
T. -L. Lee,
P. Potapov,
A. Lubk,
B. Büchner,
M. Sing,
R. Claessen
Abstract:
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer rema…
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The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.
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Submitted 26 May, 2021;
originally announced May 2021.
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Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures
Authors:
Berengar Leikert,
Judith Gabel,
Matthias Schmitt,
Martin Stübinger,
Philipp Scheiderer,
Louis Veyrat,
Tien-Lin Lee,
Michael Sing,
Ralph Claessen
Abstract:
Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ cap** layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We…
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Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ cap** layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.
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Submitted 13 April, 2021;
originally announced April 2021.
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Tailoring Materials for Mottronics: Excess Oxygen Do** of a Prototypical Mott Insulator
Authors:
Philipp Scheiderer,
Matthias Schmitt,
Judith Gabel,
Martin Stübinger,
Philipp Schütz,
Lenart Dudy,
Christoph Schlueter,
Tien-Lin Lee,
Michael Sing,
Ralph Claessen
Abstract:
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the met…
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The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating.
Here we demonstrate that thin films of the prototypical Mott insulator LaTiO$_3$ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen do** across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and cap** layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions, making LaTiO$_{3+x}$ a promising functional material for Mottronics devices.
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Submitted 16 July, 2018;
originally announced July 2018.
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Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
Authors:
P. Schütz,
D. V. Christensen,
V. Borisov,
F. Pfaff,
P. Scheiderer,
L. Dudy,
M. Zapf,
J. Gabel,
Y. Z. Chen,
N. Pryds,
V. A. Rogalev,
V. N. Strocov,
C. Schlueter,
T. -L. Lee,
H. O. Jeschke,
R. Valentí,
M. Sing,
R. Claessen
Abstract:
The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy…
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The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures.
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Submitted 16 October, 2017;
originally announced October 2017.
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Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces
Authors:
Patrick Maier,
Fabian Hartmann,
Judith Gabel,
Maximilian Frank,
Silke Kuhn,
Philipp Scheiderer,
Berengar Leikert,
Michael Sing,
Lukas Worschech,
Ralph Claessen,
Sven Höfling
Abstract:
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inherent memory functionality (memristance). For large and small gate voltages a simple non-linear resistance characteristic is observed while a pinched hy…
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We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inherent memory functionality (memristance). For large and small gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing, respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.
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Submitted 13 March, 2017; v1 submitted 17 October, 2016;
originally announced October 2016.
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Bulk Nature of Layered Perovskite Iridates beyond the Mott Scenario : An Approach from Bulk Sensitive Photoemission Study
Authors:
A. Yamasaki,
S. Tachibana,
H. Fujiwara,
A. Higashiya,
A. Irizawa,
O. Kirilmaz,
F. Pfaff,
P. Scheiderer,
J. Gabel,
M. Sing,
T. Muro,
M. Yabashi,
K. Tamasaku,
H. Sato,
H. Namatame,
M. Taniguchi,
A. Hloskovskyy,
H. Yoshida,
H. Okabe,
M. Isobe,
J. Akimitsu,
W. Drube,
R. Claessen,
T. Ishikawa,
S. Imada
, et al. (2 additional authors not shown)
Abstract:
We present genuine bulk Ir 5d jeff states of layered perovskite iridates obtained by hard-x-ray photoemission spectroscopy (HAXPES) with s- and p-polarized lights. HAXPES spectra of Sr2IrO4 and Ba2IrO4 are well reproduced by the quasi-particle densities of states calculated by the local density approximation with dynamical mean-field theory (LDA+DMFT). It is demonstrated that the insulating nature…
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We present genuine bulk Ir 5d jeff states of layered perovskite iridates obtained by hard-x-ray photoemission spectroscopy (HAXPES) with s- and p-polarized lights. HAXPES spectra of Sr2IrO4 and Ba2IrO4 are well reproduced by the quasi-particle densities of states calculated by the local density approximation with dynamical mean-field theory (LDA+DMFT). It is demonstrated that the insulating nature of the iridates is triggered by antiferromagnetic correlation (Slater type) combined with electron correlation (Mott type). The extremely-low-energy bulk-sensitive photoemission spectroscopy reveals "bad metallic" states in the paramagnetic phase of the iridates, suggesting strongly renormalized metallic states above the Neel temperature as predicted by the LDA+DMFT.
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Submitted 2 March, 2014; v1 submitted 27 October, 2013;
originally announced October 2013.
