Dark states in a carbon nanotube quantum dot
Authors:
Andrea Donarini,
Michael Niklas,
Michael Schafberger,
Nicola Paradiso,
Christoph Strunk,
Milena Grifoni
Abstract:
Illumination of atoms by resonant lasers can pump electrons into a coherent superposition of hyperfine levels which can no longer absorb the light. Such superposition is known as dark state, because fluorescent light emission is then suppressed. Here we report an all-electric analogue of this destructive interference effect in a carbon nanotube quantum dot. The dark states are a coherent superposi…
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Illumination of atoms by resonant lasers can pump electrons into a coherent superposition of hyperfine levels which can no longer absorb the light. Such superposition is known as dark state, because fluorescent light emission is then suppressed. Here we report an all-electric analogue of this destructive interference effect in a carbon nanotube quantum dot. The dark states are a coherent superposition of valley (angular momentum) states which are decoupled from either the drain or the source leads. Their emergence is visible in asymmetric current-voltage characteristics, with missing current steps and current suppression which depend on the polarity of the applied source-drain bias. Our results demonstrate for the first time coherent-population trap** by all-electric means in an artificial atom.
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Submitted 6 April, 2018;
originally announced April 2018.
Helicity sensitive terahertz radiation detection by field effect transistors
Authors:
Christoph Drexler,
Nina Dyakonova,
Peter Olbrich,
Johannes Karch,
Michael Schafberger,
Krzysztof Karpierz,
Yuri Mityagin,
Masha Lifshits,
Frederic Teppe,
Oleg Klimenko,
Yahia Meziani,
Wojciech Knap,
Sergey Ganichev
Abstract:
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one.…
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Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.
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Submitted 25 April, 2012;
originally announced April 2012.
