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Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers
Authors:
Stephan Geprägs,
Christoph Klewe,
Sibylle Meyer,
Dominik Graulich,
Felix Schade,
Marc Schneider,
Sonia Francoual,
Stephen P. Collins,
Katharina Ollefs,
Fabrice Wilhelm,
Andrei Rogalev,
Yves Joly,
Sebastian T. B. Goennenwein,
Matthias Opel,
Timo Kuschel,
Rudolf Gross
Abstract:
The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we…
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The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we compare thin film heterostructures with different order of the layer stacking and different interface properties. For standard Pt layers on Y$_{3}$Fe$_{5}$O$_{12}$ thin films, we do not detect any static magnetic polarization in Pt. These samples show an angle-dependent magnetoresistance behavior, which is consistent with the established spin Hall magnetoresistance. In contrast, for the inverted layer sequence, Y$_{3}$Fe$_{5}$O$_{12}$ thin films grown on Pt layers, Pt displays a finite induced magnetic moment comparable to that of all-metallic Pt/Fe bilayers. This magnetic moment is found to originate from finite intermixing at the Y$_{3}$Fe$_{5}$O$_{12}$/Pt interface. As a consequence, we found a complex angle-dependent magnetoresistance indicating a superposition of the spin Hall and the anisotropic magnetoresistance in these type of samples. Both effects can be disentangled from each other due to their different angle dependence and their characteristic temperature evolution.
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Submitted 8 October, 2020;
originally announced October 2020.
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THz-circuits driven by photo-thermoelectric graphene-junctions
Authors:
Andreas Brenneis,
Felix Schade,
Simon Drieschner,
Florian Heimbach,
Helmut Karl,
Jose A. Garrido,
Alexander W. Holleitner
Abstract:
For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of p…
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For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.
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Submitted 5 July, 2016;
originally announced July 2016.
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Time resolved spin Seebeck effect experiments
Authors:
Niklas Roschewsky,
Michael Schreier,
Akashdeep Kamra,
Felix Schade,
Kathrin Ganzhorn,
Sibylle Meyer,
Hans Huebl,
Stephan Geprägs,
Rudolf Gross,
Sebastian T. B. Goennenwein
Abstract:
In this Letter, we present the results of transient thermopower experiments, performed at room temperature on yttrium iron garnet/platinum bilayers. Upon application of a time-varying thermal gradient, we observe a characteristic low-pass frequency response of the ensuing thermopower voltage with cutoff frequencies of up to 37 MHz. We interpret our results in terms of the spin Seebeck effect, and…
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In this Letter, we present the results of transient thermopower experiments, performed at room temperature on yttrium iron garnet/platinum bilayers. Upon application of a time-varying thermal gradient, we observe a characteristic low-pass frequency response of the ensuing thermopower voltage with cutoff frequencies of up to 37 MHz. We interpret our results in terms of the spin Seebeck effect, and argue that small wavevector magnons are of minor importance for the spin Seebeck effect in our thin film hybrid structures.
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Submitted 7 October, 2014; v1 submitted 16 September, 2013;
originally announced September 2013.
