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Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N
Authors:
Niklas Wolff,
Georg Schoenweger,
Isabel Streicher,
Md Redwanul Islam,
Nils Braun,
Patrik Stranak,
Lutz Kirste,
Mario Prescher,
Andriy Lotnyk,
Hermann Kohlstedt,
Stefano Leone,
Lorenz Kienle,
Simon Fichtner
Abstract:
Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a measurement frequency of 1.5 kHz. Single crystal quality and homogeneous chemical composition of the film was confirmed by X-ray diffraction spectroscopic metho…
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Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a measurement frequency of 1.5 kHz. Single crystal quality and homogeneous chemical composition of the film was confirmed by X-ray diffraction spectroscopic methods such as time of flight secondary ion mass spectrometry. Annular bright field scanning transmission electron microscopy served to proof the ferroelectric polarization inversion on unit cell level. The single crystal quality further allowed to image the large-scale domain pattern of a wurtzite-type ferroelectric for the first time, revealing a predominantly cone-like domain shape along the c-axis of the material. As in previous work, this again implies the presence of strong polarization discontinuities along this crystallographic axis, which could be suitable for current transport. The domains are separated by narrow domain walls, for which an upper thickness limit of 3 nm was deduced, but which could potentially be atomically sharp. We are confident that these results will advance the commencing integration of wurtzite-type ferroelectrics to GaN as well as generally III-N based heterostructures and devices.
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Submitted 21 December, 2023;
originally announced December 2023.
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In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Authors:
Georg Schönweger,
Niklas Wolff,
Md Redwanul Islam,
Maike Gremmel,
Adrian Petraru,
Lorenz Kienle,
Hermann Kohlstedt,
Simon Fichtner
Abstract:
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on…
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Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of thinnest Al$_{1-x}$Sc$_x$N films on epitaxial templates, a significantly larger coercive field to breakdown field ratio is observed for Al$_{0.74}$Sc$_{0.26}$N films grown on silicon substrates, the technologically most relevant substrate-type. 3) The formation of true ferroelectric domains in wurtzite-type materials is for the first time demonstrated on the atomic scale by scanning transmission electron microscopy investigations of a sub-5 nm thin partially switched film. The direct observation of inversion domain boundaries within single nm-sized grains supports the theory of a gradual domain-wall motion limited switching process in wurtzite-type ferroelectrics. Ultimately, this should enable the analog switching necessary for mimicking neuromorphic concepts also in highly scaled devices.
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Submitted 6 April, 2023;
originally announced April 2023.
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Ultrathin AlScN for low-voltage driven ferroelectric-based devices
Authors:
Georg Schönweger,
Md Redwanul Islam,
Niklas Wolff,
Adrian Petraru,
Lorenz Kienle,
Hermann Kohlstedt,
Simon Fichtner
Abstract:
Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an i…
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Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an in situ Pt cap** approach to avoid oxidation of the Al0.72Sc0.28N film surface. Structural characterization by X-ray diffraction and transmission electron microscopy reveals the established epitaxy. The thus obtained high-quality interfaces in combination with the in situ cap** is expected to facilitate ferroelectric switching of AlScN in the ultrathin regime. The analysis of the relative permittivity and coercive field dependence on the Al0.72Sc0.28N film thicknesses in the range of 100 nm down to 10 nm indicates only moderate scaling effects, suggesting that the critical thickness for ferroelectricity is not yet approached. Furthermore, the deposited layer stack demonstrates the possibility of including ultrathin ferroelectric AlScN into all-epitaxial GaN-based devices using sputter deposition techniques. Thus, our work highlights the integration and scaling potential of all-epitaxial ultrathin AlScN offering high storage density paired with low voltage operation desired for state of the art ferroelectric memory devices.
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Submitted 5 July, 2022;
originally announced July 2022.
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On the exceptional temperature stability of ferroelectric AlScN thin films
Authors:
MD Redwanul Islam,
Niklas Wolff,
Mohammed Yassine,
Georg Schönweger,
Björn Christian,
Hermann Kohlstedt,
Oliver Ambacher,
Fabian Lofink,
Lorenz Kienle,
Simon Fichtner
Abstract:
Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. This paper presents conclusive evidence that in the case of ferroelectric AlScN, low temperature has to be seen as a purely relative term, since its ferroelectric-to-paraelectric transition temperature is confirmed to surpa…
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Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. This paper presents conclusive evidence that in the case of ferroelectric AlScN, low temperature has to be seen as a purely relative term, since its ferroelectric-to-paraelectric transition temperature is confirmed to surpass 1100°C and thus the transition temperature of virtually any other thin film ferroelectric. We arrived at this conclusion through investigating the structural stability of 0.4 - 2 $μ$m thick Al$_{0.73}$Sc$_{0.27}$N films grown on Mo bottom electrodes via in situ high-temperature X-ray diffraction and permittivity measurements. Our studies reveal the wurtzite-type structure of Al$_{0.73}$Sc$_{0.27}$N is conserved during the entire 1100°C annealing cycle, apparent through a constant c over a lattice parameter ratio. In situ permittivity measurements performed up to 1000°C strongly support this conclusion and include what could be the onset of a diverging permittivity only at the very upper end of the measurement interval. Our in situ measurements are well-supported by ex situ (scanning) transmission electron microscopy and polarization and capacity hysteresis measurements. These results confirm the structural stability on the sub-$μ$m scale next to the stability of the inscribed polarization during the complete 1100°C annealing treatment. Thus, AlScN is the first readily available thin film ferroelectric with a temperature stability that surpasses virtually all thermal budgets occurring in microtechnology, be it during fabrication or the lifetime of a device - even in harshest environments.
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Submitted 18 May, 2021;
originally announced May 2021.
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Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films
Authors:
Simon Fichtner,
Georg Schönweger,
Tom-Niklas Kreutzer,
Fabian Lofink,
Adrian Petraru,
Hermann Kohlstedt,
Bernhard Wagner
Abstract:
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations (70-110 $μ$C/cm$^2$). We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited proc…
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The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations (70-110 $μ$C/cm$^2$). We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited process progressing from the electrode interfaces. Further, imprint was generally observed in AlScN films and can tentatively be traced to the alignment of charged defects with the internal and external polarization and field, respectively. Potentially crucial from the application point of view, ferroelectricity could be observed in films with thicknesses below 30 nm - as the coercive fields of AlScN were found to be largely independent of thickness between 600 nm and 27 nm.
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Submitted 12 October, 2020;
originally announced October 2020.
