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Learning capability of parametrized quantum circuits
Authors:
Dirk Heimann,
Gunnar Schönhoff,
Elie Mounzer,
Hans Hohenfeld,
Frank Kirchner
Abstract:
Variational quantum algorithms (VQAs) and their applications in the field of quantum machine learning through parametrized quantum circuits (PQCs) are thought to be one major way of leveraging noisy intermediate-scale quantum computing devices. However, differences in the performance of certain VQA architectures are often unclear since established best practices as well as detailed studies are mis…
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Variational quantum algorithms (VQAs) and their applications in the field of quantum machine learning through parametrized quantum circuits (PQCs) are thought to be one major way of leveraging noisy intermediate-scale quantum computing devices. However, differences in the performance of certain VQA architectures are often unclear since established best practices as well as detailed studies are missing. In this paper, we build upon the work by Schuld et al. and Vidal et al. and compare popular ansätze for PQCs through the new measure of learning capability. We also examine dissipative quantum neural networks (dQNN) as introduced by Beer et al. and propose a data re-upload structure for dQNNs to increase their learning capability. Comparing the results for the different PQC architectures, we can provide guidelines for designing efficient PQCs.
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Submitted 13 March, 2024; v1 submitted 21 September, 2022;
originally announced September 2022.
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A full gap above the Fermi level: the charge density wave of monolayer VS2
Authors:
Camiel van Efferen,
Jan Berges,
Joshua Hall,
Erik van Loon,
Stefan Kraus,
Arne Schobert,
Tobias Wekking,
Felix Huttmann,
Eline Plaar,
Nico Rothenbach,
Katharina Ollefs,
Lucas Machado Arruda,
Nick Brookes,
Gunnar Schoenhoff,
Kurt Kummer,
Heiko Wende,
Tim Wehling,
Thomas Michely
Abstract:
In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal--insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS$_2$ realizes a CDW which stands out of this standard model. There is a…
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In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal--insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS$_2$ realizes a CDW which stands out of this standard model. There is a full CDW gap residing in the unoccupied states of monolayer VS$_2$. At the Fermi level, the CDW induces a topological metal-metal (Lifshitz) transition. Non-linear coupling of transverse and longitudinal phonons is essential for the formation of the CDW and the full gap above the Fermi level. Additionally, x-ray magnetic circular dichroism reveals the absence of net magnetization in this phase, pointing to coexisting charge and spin density waves in the ground state.
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Submitted 8 September, 2021; v1 submitted 4 January, 2021;
originally announced January 2021.
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Observation of exciton redshift-blueshift crossover in monolayer WS2
Authors:
Edbert J. Sie,
Alexander Steinhoff,
Christopher Gies,
Chun Hung Lui,
Qiong Ma,
Malte Rosner,
Gunnar Schonhoff,
Frank Jahnke,
Tim O. Wehling,
Yi-Hsien Lee,
**g Kong,
Pablo Jarillo-Herrero,
Nuh Gedik
Abstract:
We report a rare atom-like interaction between excitons in monolayer WS2, measured using ultrafast absorption spectroscopy. At increasing excitation density, the exciton resonance energy exhibits a pronounced redshift followed by an anomalous blueshift. Using both material-realistic computation and phenomenological modeling, we attribute this observation to plasma effects and an attraction-repulsi…
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We report a rare atom-like interaction between excitons in monolayer WS2, measured using ultrafast absorption spectroscopy. At increasing excitation density, the exciton resonance energy exhibits a pronounced redshift followed by an anomalous blueshift. Using both material-realistic computation and phenomenological modeling, we attribute this observation to plasma effects and an attraction-repulsion crossover of the exciton-exciton interaction that mimics the Lennard-Jones potential between atoms. Our experiment demonstrates a strong analogy between excitons and atoms with respect to inter-particle interaction, which holds promise to pursue the predicted liquid and crystalline phases of excitons in two-dimensional materials.
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Submitted 27 April, 2018;
originally announced April 2018.
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Excitation-induced transition to indirect band gaps in atomically thin transition metal dichalcogenide semiconductors
Authors:
D. Erben,
A. Steinhoff,
G. Schönhoff,
T. O. Wehling,
C. Gies,
F. Jahnke
Abstract:
Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities of excited charge carriers in the various band-structure valleys cause strong many-body renormalizations that influence both the electronic properties and the op…
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Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities of excited charge carriers in the various band-structure valleys cause strong many-body renormalizations that influence both the electronic properties and the optical response of the material. We investigate electronic and optical properties of the typical monolayer TMDCs MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ in the presence of excited carriers by solving semiconductor Bloch equations on the full Brillouin zone. With increasing carrier density, we systematically find a reduction of the exciton binding energies due to Coulomb screening and Pauli blocking. Together with excitation-induced band-gap shrinkage this leads to redshifts of excitonic resonances up to the dissociation of excitons. As a central result, we predict for all investigated monolayer TMDCs that the $Σ$-valley shifts stronger than the K-valley. Two of the materials undergo a transition from direct to indirect band gaps under carrier excitation similar to well-known strain-induced effects. Our findings have strong implications for the filling of conduction-band valleys with excited carriers and are relevant to transport and optical applications as well as the emergence of phonon-driven superconductivity.
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Submitted 23 April, 2018;
originally announced April 2018.
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Electronic structure of single layer 1T-NbSe$_2$: interplay of lattice distortions, non-local exchange, and Mott-Hubbard correlations
Authors:
E. Kamil,
J. Berges,
G. Schönhoff,
M. Rösner,
M. Schüler,
G. Sangiovanni,
T. O. Wehling
Abstract:
Using ab-initio calculations we reveal the nature of the insulating phase recently found experimentally in monolayer 1T-NbSe$_2$. We find soft phonon modes in a large parts of the Brillouin zone indicating the strong-coupling nature of a charge-density-wave instability. Structural relaxation of a $\sqrt{13}\times\sqrt{13}$ supercell reveals a Star-of-David reconstruction with an energy gain of 60…
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Using ab-initio calculations we reveal the nature of the insulating phase recently found experimentally in monolayer 1T-NbSe$_2$. We find soft phonon modes in a large parts of the Brillouin zone indicating the strong-coupling nature of a charge-density-wave instability. Structural relaxation of a $\sqrt{13}\times\sqrt{13}$ supercell reveals a Star-of-David reconstruction with an energy gain of 60 meV per primitive unit cell. The band structure of the distorted phase exhibits a half-filled flat band which is associated with orbitals that are delocalized over several atoms in each Star of David. By including many-body corrections through a combined GW, hybrid-functional, and DMFT treatment, we find the flat band to split into narrow Hubbard bands. The lowest energy excitation across the gap turns out to be between itinerant Se-$p$ states and the upper Hubbard band, determining the system to be a charge-transfer insulator. Combined hybrid-functional and GW calculations show that long-range interactions shift the Se-$p$ states to lower energies. Thus, a delicate interplay of local and long-range correlations determines the gap nature and its size in this distorted phase of the monolayer 1T-NbSe$_2$.
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Submitted 11 April, 2018;
originally announced April 2018.
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Plasmonic Superconductivity in Layered Materials
Authors:
M. Rösner,
R. E. Groenewald,
G. Schönhoff,
J. Berges,
S. Haas,
T. O. Wehling
Abstract:
Plasmonic excitations behave fundamentally different in layered materials in comparison to bulk systems. They form gapless modes, which in turn couple at low energies to the electrons. Thereby they can strongly influence superconducting instabilities. Here, we show how these excitations can be controlled from the outside via changes in the dielectric environment or in the do** level, which allow…
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Plasmonic excitations behave fundamentally different in layered materials in comparison to bulk systems. They form gapless modes, which in turn couple at low energies to the electrons. Thereby they can strongly influence superconducting instabilities. Here, we show how these excitations can be controlled from the outside via changes in the dielectric environment or in the do** level, which allows for external tuning of the superconducting transition temperature. By solving the gap equation for an effective system, we find that the plasmonic influence can both strongly enhance or reduce the transition temperature, depending on the details of the plasmon-phonon interplay. We formulate simple experimental guidelines to find plasmon- induced elevated transition temperatures in layered materials.
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Submitted 12 March, 2018;
originally announced March 2018.
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Competing Coulomb and electron-phonon interactions in NbS$_2$
Authors:
E. G. C. P. van Loon,
M. Rösner,
G. Schönhoff,
M. I. Katsnelson,
T. O. Wehling
Abstract:
The interplay of Coulomb and electron-phonon interactions with thermal and quantum fluctuations facilitates rich phase diagrams in two-dimensional electron systems. Layered transition metal dichalcogenides hosting charge, excitonic, spin and superconducting order form an epitomic material class in this respect. Theoretical studies of materials like NbS$_2$ have focused on the electron-phonon coupl…
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The interplay of Coulomb and electron-phonon interactions with thermal and quantum fluctuations facilitates rich phase diagrams in two-dimensional electron systems. Layered transition metal dichalcogenides hosting charge, excitonic, spin and superconducting order form an epitomic material class in this respect. Theoretical studies of materials like NbS$_2$ have focused on the electron-phonon coupling whereas the Coulomb interaction, particularly strong in the monolayer limit, remained essentially untouched. Here, we analyze the interplay of short- and long-range Coulomb as well as electron-phonon interactions in NbS$_2$ monolayers. The combination of these interactions causes electronic correlations that are fundamentally different to what would be expected from the interaction terms separately. The fully interacting electronic spectral function resembles the non-interacting band structure but with appreciable broadening. An unexpected coexistence of strong charge and spin fluctuations puts NbS$_2$ close to spin and charge order, suggesting monolayer NbS$_2$ as a platform for atomic scale engineering of electronic quantum phases.
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Submitted 2 July, 2018; v1 submitted 18 July, 2017;
originally announced July 2017.
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Optically and electrically controllable adatom spin-orbital dynamics in transition metal dichalcogenides
Authors:
Bin Shao,
Malte Schüler,
Gunnar Schönhoff,
Thomas Frauenheim,
Gerd Czycholl,
Tim O. Wehling
Abstract:
We analyze the interplay of spin-valley coupling, orbital physics and magnetic anisotropy taking place at single magnetic atoms adsorbed on semiconducting transition-metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se). Orbital selection rules turn out to govern the kinetic exchange coupling between the adatom and charge carriers in the MX$_2$ and lead to highly orbitally dependent spin-flip scatt…
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We analyze the interplay of spin-valley coupling, orbital physics and magnetic anisotropy taking place at single magnetic atoms adsorbed on semiconducting transition-metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se). Orbital selection rules turn out to govern the kinetic exchange coupling between the adatom and charge carriers in the MX$_2$ and lead to highly orbitally dependent spin-flip scattering rates, as we illustrate for the example of transition metal adatoms with $d^9$ configuration. Our ab initio calculations suggest that $d^9$ configurations are realizable by single Co, Rh, or Ir adatoms on MoS$_2$, which additionally exhibit a sizable magnetic anisotropy. We find that the interaction of the adatom with carriers in the MX$_2$ allows to tune its behavior from a quantum regime with full Kondo screening to a regime of "Ising spintronics" where its spin-orbital moment acts as classical bit, which can be erased and written electronically and optically.
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Submitted 26 June, 2017;
originally announced June 2017.
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Excitons versus electron-hole plasma in monolayer transition metal dichalcogenide semiconductors
Authors:
Alexander Steinhoff,
Matthias Florian,
Malte Rösner,
Gunnar Schönhoff,
Tim Oliver Wehling,
Frank Jahnke
Abstract:
When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a fermionic plasma of unbound particles or a bosonic exciton gas. Usually, the exciton phase is associated with low temperatures. In atomically thin transition metal dichalcogenide semiconductors, excitons are particularly important even at room temperature due to strong Coulomb interaction and a large e…
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When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a fermionic plasma of unbound particles or a bosonic exciton gas. Usually, the exciton phase is associated with low temperatures. In atomically thin transition metal dichalcogenide semiconductors, excitons are particularly important even at room temperature due to strong Coulomb interaction and a large exciton density of states. Using state-of-the-art many-body theory including dynamical screening, we show that the exciton-to-plasma ratio can be efficiently tuned by dielectric substrate screening as well as charge carrier do**. Moreover, we predict a Mott transition from the exciton-dominated regime to a fully ionized electron-hole plasma at excitation densities between $3\times10^{12}$ cm$^{-2}$ and $1\times10^{13}$ cm$^{-2}$ depending on temperature, carrier do** and dielectric environment. We propose the observation of these effects by studying excitonic satellites in photoemission spectroscopy and scanning tunneling microscopy.
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Submitted 18 May, 2017; v1 submitted 15 May, 2017;
originally announced May 2017.
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Interplay of screening and superconductivity in low-dimensional materials
Authors:
G. Schönhoff,
M. Rösner,
R. Groenewald,
S. Haas,
T. O. Wehling
Abstract:
A quantitative description of Coulomb interactions is developed for two-dimensional superconducting materials, enabling us to compare intrinsic with external screening effects, such as those due to substrates. Using the example of a doped monolayer of MoS2 embedded in a tunable dielectric environment, we demonstrate that the influence of external screening is limited to a length scale, bounded fro…
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A quantitative description of Coulomb interactions is developed for two-dimensional superconducting materials, enabling us to compare intrinsic with external screening effects, such as those due to substrates. Using the example of a doped monolayer of MoS2 embedded in a tunable dielectric environment, we demonstrate that the influence of external screening is limited to a length scale, bounded from below by the effective thickness of the quasi-two-dimensional material and from above by its intrinsic screening length. As a consequence, it is found that unconventional Coulomb-driven superconductivity cannot be induced in MoS2 by tuning the substrate properties alone. Our calculations of the retarded Morel-Anderson Coulomb potential {μ*} reveal that the Coulomb interactions, renormalized by the reduced layer thickness and the substrate properties, can shift the onset of the electron-phonon driven superconducting phase in monolayer MoS2 but do not significantly affect the critical temperature at optimal do**.
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Submitted 6 October, 2016; v1 submitted 24 May, 2016;
originally announced May 2016.
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Valley Plasmonics in the Dichalcogenides
Authors:
R. E. Groenewald,
M. Rösner,
G. Schönhoff,
S. Haas,
T. O. Wehling
Abstract:
The rich phenomenology of plasmonic excitations in the dichalcogenides is analyzed as a function of do**. The many-body polarization, the dielectric response function and electron energy loss spectra are calculated using an ab initio based model involving material-realistic Coulomb interactions, band structure and spin-orbit coupling. Focusing on the representative case of MoS$_2$, a plethora of…
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The rich phenomenology of plasmonic excitations in the dichalcogenides is analyzed as a function of do**. The many-body polarization, the dielectric response function and electron energy loss spectra are calculated using an ab initio based model involving material-realistic Coulomb interactions, band structure and spin-orbit coupling. Focusing on the representative case of MoS$_2$, a plethora of plasmon bands are observed, originating from scattering processes within and between the conduction or valence band valleys. We discuss the resulting square-root and linear collective modes, arising from long-range versus short-range screening of the Coulomb potential. We show that the multi-orbital nature of the bands and spin-orbit coupling strongly affects inter-valley scattering processes by gap** certain two-particle modes at large momentum transfer.
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Submitted 7 January, 2016;
originally announced January 2016.
