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Magnetization and magneto-transport studies on Fe$_2$VAl$_{1-x}$Si$_x$
Authors:
E. P. Amaladass,
A. T. Satya,
Shilpam Sharma,
K. Vinod,
V. Srinivas,
C. S. Sundar,
A. Bharathi
Abstract:
We report on magnetoresistance, Hall and magnetization measurements of Fe2VAl1-xSix Heusler compounds for x= 0.005, 0.015, 0.02. There is a systematic change in the temperature coefficient of resistance (TCR) from negative to positive as the Si composition is increased. The Hall co-efficient shows that the carriers are electron like and the carrier density increases with Si concentration. Resistan…
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We report on magnetoresistance, Hall and magnetization measurements of Fe2VAl1-xSix Heusler compounds for x= 0.005, 0.015, 0.02. There is a systematic change in the temperature coefficient of resistance (TCR) from negative to positive as the Si composition is increased. The Hall co-efficient shows that the carriers are electron like and the carrier density increases with Si concentration. Resistance measurements under magnetic field indicate a decreasing behavior under the application of magnetic field at low temperature region (T< 60 K), suggesting the suppression of scattering by magnetic field. Temperature and field dependent magnetization measurements did not show any significant change apart from the fact that the presence of super paramagnetic (SPM) cluster and its ordering at low temperatures. Arrott plot analysis of magnetization versus field also indicates the magnetic ordering with applied field below 60 K.
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Submitted 29 June, 2015;
originally announced June 2015.
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Pressure Induced Metallization of BaMn2As2
Authors:
A. T. Satya,
Awadhesh Mani,
A. Arulraj,
N. V. Chandra Shekar,
K. Vinod,
C. S. Sundar,
A. Bharathi
Abstract:
The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is…
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The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is indicated by a change in the temperature co-efficient in the rho(T) data at ~36 K . However complete metallization in entire temperature range is seen at a P~5.8 GPa. High pressure XRD studies carried out at room temperature also shows an anomaly in the pressure versus volume curve around P ~ 5 GPa, without a change in crystal structure, indicative of an electronic transition. Further, a clear precipitous drop in rho(T) at ~17 K is seen for P ~5.8 GPa which suggests the possibility of the system going over to a superconducting ground state.
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Submitted 19 November, 2011; v1 submitted 22 October, 2011;
originally announced October 2011.
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High intrinsic flux pinning strength of BaFe2-xCoxAs2 superconductor
Authors:
K. Vinod,
Shilpam Sharma,
A. T. Satya,
C. S. Sundar,
A. Bharathi
Abstract:
The field dependence of flux pinning potential, U0, for under-doped, optimally doped and over-doped Ba(Fe,Co)2As2 single crystals has been investigated. U0 is determined using the Thermally Activated Flux Flow (TAFF) model, for both H || ab and H || c configurations. The observed power law dependencies of U0 versus H suggest that for fields upto 12 T for H || ab and 7 T for H || c, individual flux…
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The field dependence of flux pinning potential, U0, for under-doped, optimally doped and over-doped Ba(Fe,Co)2As2 single crystals has been investigated. U0 is determined using the Thermally Activated Flux Flow (TAFF) model, for both H || ab and H || c configurations. The observed power law dependencies of U0 versus H suggest that for fields upto 12 T for H || ab and 7 T for H || c, individual flux pinning, and for fields beyond 7 T for H || c, collective pinning becomes operative. A comparison of U0 for the Ba(Fe,Co)2As2 system with some other superconductors is presented
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Submitted 21 July, 2011;
originally announced July 2011.
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Superconducting and critical properties of PrOFe0.9Co0.1As: effect of P do**
Authors:
Shilpam Sharma,
Jai Prakash,
Gohil S. Thakur,
A. T. Satya,
A. Bharathi,
A K Ganguli,
C S Sundar
Abstract:
PrOFe0.9Co0.1As is known to be a superconductor with a TC of ~14 K. In an attempt to induce charge transfer and also induce chemical pressure between the FeAs and PrO layers we have synthesized for the first time oxypnictides of the type PrOFe0.9Co0.1As1-xPx (P do** at As sites). All the compounds crystallize in the tetragonal ZrCuSiAs type structure (space group = P4/nmm). The lattice parameter…
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PrOFe0.9Co0.1As is known to be a superconductor with a TC of ~14 K. In an attempt to induce charge transfer and also induce chemical pressure between the FeAs and PrO layers we have synthesized for the first time oxypnictides of the type PrOFe0.9Co0.1As1-xPx (P do** at As sites). All the compounds crystallize in the tetragonal ZrCuSiAs type structure (space group = P4/nmm). The lattice parameters (a and c) decrease as expected on substitution of smaller phosphorous at the arsenic site in PrOFe0.9Co0.1As and a decrease in TC was observed on substitution of P ions at a low rate of 0.13K/at. % of P for x > 0.1. The irreversibility field (Hirr) and critical current density (JC), obtained using the AC susceptibility measurements was found to decrease monotonically with increasing 'P' concentration. 'Hirr' is observed to be much smaller than HC2, pointing to a very low pinning energy. The pinning potential obtained using both in-field transport and AC susceptibility measurements indicate a low value of ~40 meV and show no significant variation with P substitution.
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Submitted 1 April, 2011;
originally announced April 2011.
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Upper critical field anisotropy in BaFe2-xCoxAs2 single crystals synthesized without flux
Authors:
K. Vinod,
A. T. Satya,
Shilpam Sharma,
C. S. Sundar,
A. Bharathi
Abstract:
The upper critical field was measured upto 12 T for three BaFe2-xCoxAs2 single crystals with estimated Co concentrations of x = 0.082, x = 0.117 and x = 0.143. HC2 versus temperature was measured from temperature dependent resistivity, for various applied magnetic fields, H || ab and H || c. The [dHC2/dT]T=Tc, normalized with the corresponding TC, decreases with increasing Co content, for both dir…
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The upper critical field was measured upto 12 T for three BaFe2-xCoxAs2 single crystals with estimated Co concentrations of x = 0.082, x = 0.117 and x = 0.143. HC2 versus temperature was measured from temperature dependent resistivity, for various applied magnetic fields, H || ab and H || c. The [dHC2/dT]T=Tc, normalized with the corresponding TC, decreases with increasing Co content, for both directions. The anisotropy γ defined as HC2 || ab / HC2 || c shows a distinct increase with Co content, and its temperature dependence shows a peak close to the TC. Magneto transport measurements, in the spin density wave regions, showed significant negative MR for H || ab and positive MR of H || c in the x = 0.082 sample. The implications of these results are discussed.
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Submitted 8 March, 2011;
originally announced March 2011.
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Intricacies of Strain and Magnetic Field Induced Charge Order Melting in Pr0.5Ca0.5MnO3 Thin Films
Authors:
Dipak Kumar Baisnab,
T. Geetha Kumary,
A. T. Satya,
Awadhesh Mani,
J. Janaki,
R. Nithya,
L. S. Vaidhyanathan,
M. P. Janawadkar,
A. Bharathi
Abstract:
Thin films of the half doped manganite Pr0.5Ca0.5MnO3 were grown on (100) oriented MgO substrates by pulsed laser deposition technique. In order to study the effect of strain on the magnetic field induced charge order melting, films of different thicknesses were prepared and their properties were studied by x-ray diffraction, electrical resistivity and magnetoresistance measurements. A field induc…
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Thin films of the half doped manganite Pr0.5Ca0.5MnO3 were grown on (100) oriented MgO substrates by pulsed laser deposition technique. In order to study the effect of strain on the magnetic field induced charge order melting, films of different thicknesses were prepared and their properties were studied by x-ray diffraction, electrical resistivity and magnetoresistance measurements. A field induced charge order melting is observed for films with very small thicknesses. The charge order transition temperature and the magnetic filed induced charge order melting are observed to depend on the nature of strain that is experienced by the film.
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Submitted 23 November, 2010;
originally announced November 2010.
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Superconductivity in Ru substituted BaFe2-xRuxAs2
Authors:
Shilpam Sharma,
A. Bharathi,
Sharat Chandra,
Raghavendra Reddy,
S. Paulraj,
A. T. Satya,
V. S. Sastry,
Ajay Gupta,
C. S. Sundar
Abstract:
The occurrence of bulk superconductivity at ~22 K is reported in polycrystalline samples of BaFe2-xRuxAs2 for nominal Ru content in the range of x=0.75 to 1.125. A systematic suppression of the spin density wave transition temperature (TSDW) precedes the appearance of superconductivity in the system. A phase diagram is proposed based on the measured TSDW and superconducting transition temperature…
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The occurrence of bulk superconductivity at ~22 K is reported in polycrystalline samples of BaFe2-xRuxAs2 for nominal Ru content in the range of x=0.75 to 1.125. A systematic suppression of the spin density wave transition temperature (TSDW) precedes the appearance of superconductivity in the system. A phase diagram is proposed based on the measured TSDW and superconducting transition temperature (TC) variations as a function of Ru composition. Band structure calculations, indicate introduction of electron carriers in the system upon Ru substitutiom. The calculated magnetic moment on Fe shows a minimum at x=1.0, suggesting that the suppression of the magnetic moment is associated with the emergence of superconductivity. Results of low temperature and high field Mossbauer measurements are presented. These indicate weakening of magnetic interaction with Ru substitution
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Submitted 6 August, 2010; v1 submitted 16 February, 2009;
originally announced February 2009.
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Critical properties of superconducting Ba1-xKxFe2As2
Authors:
A. Bharathi,
Shilpam Sharma,
R. Paulraj,
A. T. Satya,
Y. Hariharan,
C. S. Sundar
Abstract:
Magnetisation and magnetoresistance measurements have been carried out on superconducting Ba1-xKxFe2As2 samples with x=0.40 and 0.50. From low field magnetization data carried out at different temperatures below TC, HC1 has been extracted. The plot of HC1 versus temperature shows an anomalous increase at low temperatures. From high field magnetization hysterisis measurements carried out in field…
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Magnetisation and magnetoresistance measurements have been carried out on superconducting Ba1-xKxFe2As2 samples with x=0.40 and 0.50. From low field magnetization data carried out at different temperatures below TC, HC1 has been extracted. The plot of HC1 versus temperature shows an anomalous increase at low temperatures. From high field magnetization hysterisis measurements carried out in fields up to 16 T at 4.2 K and 20 K, the critical current density has been evaluated using the Bean critical state model. The JC determined from the high field data is >104A/cm2 at 4.2 K and 5 T. The superconducting transitions were also measured resistively in increasing applied magnetic fields up to 12 Tesla. From the variation of the TC onset with applied field, dHC2/dT at TC was obtained to be -7.708 T/K and -5.57 T/K in the samples with x=0.40 and 0.50.
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Submitted 2 February, 2009;
originally announced February 2009.
