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Observation of the signatures of sub-resolution defects in two-dimensional superconductors with scanning SQUID
Authors:
Hilary Noad,
Christopher A. Watson,
Hisashi Inoue,
Minu Kim,
Hiroki K. Sato,
Christopher Bell,
Harold Y. Hwang,
John R. Kirtley,
Kathryn A. Moler
Abstract:
The diamagnetic susceptibility of a superconductor is directly related to its superfluid density. Mutual inductance is a highly sensitive method for characterizing thin films; however, in traditional mutual inductance measurements, the measured response is a non-trivial average over the area of the mutual inductance coils, which are typically of millimeter size. Here we image localized, isolated f…
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The diamagnetic susceptibility of a superconductor is directly related to its superfluid density. Mutual inductance is a highly sensitive method for characterizing thin films; however, in traditional mutual inductance measurements, the measured response is a non-trivial average over the area of the mutual inductance coils, which are typically of millimeter size. Here we image localized, isolated features in the diamagnetic susceptibility of δ-doped SrTiO3, the 2-DES at the interface between LaAlO3 and SrTiO3, and Nb superconducting thin film systems using scanning superconducting quantum interference device susceptometry, with spatial resolution as fine as 0.7 μm. We show that these features can be modeled as locally suppressed superfluid density, with a single parameter that characterizes the strength of each feature. This method provides a systematic means of finding and quantifying submicron defects in two-dimensional superconductors.
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Submitted 6 August, 2018; v1 submitted 2 June, 2018;
originally announced June 2018.
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The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions
Authors:
M. Minohara,
Y. Hikita,
C. Bell,
H. Inoue,
M. Hosoda,
H. K. Sato,
H. Kumigashira,
M. Oshima,
E. Ikenaga,
H. Y. Hwang
Abstract:
We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These re…
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We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.
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Submitted 21 March, 2014;
originally announced March 2014.
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Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces
Authors:
Beena Kalisky,
Eric M. Spanton,
Hilary Noad,
John R. Kirtley,
Katja C. Nowack,
Christopher Bell,
Hiroki K. Sato,
Masayuki Hosoda,
Yanwu Xie,
Yasuyuki Hikita,
Carsten Woltmann,
Georg Pfanzelt,
Rainer Jany,
Christoph Richter,
Harold Y. Hwang,
Jochen Mannhart,
Kathryn A. Moler
Abstract:
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the int…
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The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.
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Submitted 11 December, 2013;
originally announced December 2013.
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Stoichiometry control of the electronic properties of the LaAlO_3/SrTiO_3 heterointerface
Authors:
H. K. Sato,
C. Bell,
Y. Hikita,
H. Y. Hwang
Abstract:
We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001) heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide range from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders…
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We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001) heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide range from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders of magnitude. The film lattice expansion, caused by cation vacancies, is found to be the important functional parameter. These results can be understood to arise from the variations in the electrostatic boundary conditions, and their resolution, with stoichiometry.
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Submitted 29 April, 2013;
originally announced April 2013.
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Measurements of the gate tuned superfluid density in superconducting LaAlO3/SrTiO3
Authors:
Julie A. Bert,
Katja C. Nowack,
Beena Kalisky,
Hilary Noad,
John R. Kirtley,
Chris Bell,
Hiroki K. Sato,
Masayuki Hosoda,
Yasayuki Hikita,
Harold Y. Hwang,
Kathryn A. Moler
Abstract:
The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting orde…
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The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting order parameter is unanswered. We present local magnetic susceptibility, related to the superfluid density, as a function of temperature, gate voltage and location. We show that the temperature dependence of the superfluid density at different gate voltages collapse to a single curve characteristic of a full superconducting gap. Further, we show that the dipole moments observed in this system are not modulated by the gate voltage.
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Submitted 17 May, 2012;
originally announced May 2012.
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Critical thickness for ferromagnetism in LaAlO3/SrTiO3 heterostructures
Authors:
Beena Kalisky,
Julie A. Bert,
Brannon B. Klopfer,
Christopher Bell,
Hiroki K. Sato,
Masayuki Hosoda,
Yasuyuki Hikita,
Harold Y. Hwang,
Kathryn A. Moler
Abstract:
In heterostructures of LaAlO3 (LAO) and SrTiO3 (STO), two nonmagnetic insulators, various forms of magnetism have been observed [1-7], which may [8, 9] or may not [10] arise from interface charge carriers that migrate from the LAO to the interface in an electronic reconstruction [11]. We image the magnetic landscape [5] in a series of n-type samples of varying LAO thickness. We find ferromagnetic…
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In heterostructures of LaAlO3 (LAO) and SrTiO3 (STO), two nonmagnetic insulators, various forms of magnetism have been observed [1-7], which may [8, 9] or may not [10] arise from interface charge carriers that migrate from the LAO to the interface in an electronic reconstruction [11]. We image the magnetic landscape [5] in a series of n-type samples of varying LAO thickness. We find ferromagnetic patches that appear only above a critical thickness, similar to that for conductivity [12]. Consequently we conclude that an interface reconstruction is necessary for the formation of magnetism. We observe no change in ferromagnetism with gate voltage, and detect ferromagnetism in a non-conducting p-type sample, indicating that the carriers at the interface do not need to be itinerant to generate magnetism. The fact that the ferromagnetism appears in isolated patches whose density varies greatly between samples strongly suggests that disorder or local strain induce magnetism in a population of the interface carriers.
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Submitted 5 January, 2012;
originally announced January 2012.
