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Semiconductor Nanopillar as a Single-Photon Emitter and its Optimal Design
Authors:
S. Odashima,
H. Sasakura
Abstract:
The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated. In consideration of the quantum dot density, the pillar diameter was determined as only a few quantum dots were involved in a pillar. The lattice constant of a pillar array was optimized such that only one pillar couples to the fiber core without any specific manipulation. Such structural consideration regarding the photon…
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The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated. In consideration of the quantum dot density, the pillar diameter was determined as only a few quantum dots were involved in a pillar. The lattice constant of a pillar array was optimized such that only one pillar couples to the fiber core without any specific manipulation. Such structural consideration regarding the photon source and the optical setup contributes to the high purity of the single-photon generation. For high extraction efficiency of photons from photon source, we fabricated the metal cavity structure around the pillar array. The combination of dry-etching and wet-etching realizes the functionally designed three-dimensional structure. Such fabrication processes face the realization of the well-optimized single-photon emitter.
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Submitted 30 October, 2021;
originally announced November 2021.
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Third Stable Branch and Tristability of Nuclear Spin Polarization in Single Quantum Dot System
Authors:
Sota Yamamoto,
Reina Kaji,
Hirotaka Sasakura,
Satoru Adachi
Abstract:
Semiconductor quantum dots provide a spin-coupled system of an electron and nuclei via enhanced hyperfine interaction. We showed that the nuclear spin polarization in single quantum dots can have three stable branches under a longitudinal magnetic field. The states were accompanied by hysteresis loops around the boundaries of each branch with a change in the excitation condition. To explain these…
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Semiconductor quantum dots provide a spin-coupled system of an electron and nuclei via enhanced hyperfine interaction. We showed that the nuclear spin polarization in single quantum dots can have three stable branches under a longitudinal magnetic field. The states were accompanied by hysteresis loops around the boundaries of each branch with a change in the excitation condition. To explain these findings, we incorporated the electron spin relaxation caused by the nuclear spin fluctuation into the previously-studied dynamic nuclear spin polarization mechanism. The model reproduces the new features of nuclear spin polarization and the associated strong reduction in the observed electron spin polarization, and can refer to the tristability of nuclear spin polarization.
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Submitted 23 March, 2020;
originally announced March 2020.
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Fiber-coupled pillar array as a highly pure and stable single-photon source
Authors:
Satoru Odashima,
Hirotaka Sasakura,
Hideaki Nakajima,
Hidekazu Kumano
Abstract:
A highly pure and stable single-photon source is prepared that comprises a well-designed pillar array in which each pillar contains only a few InAs quantum dots. A nano-pillar in this array is in direct contact with a fiber end surface and cooled in a liquid-He bath. Auto-correlation measurement shows that this source provides an average $g^{(2)}(0)$ value of 0.0174 in the measured excitation-powe…
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A highly pure and stable single-photon source is prepared that comprises a well-designed pillar array in which each pillar contains only a few InAs quantum dots. A nano-pillar in this array is in direct contact with a fiber end surface and cooled in a liquid-He bath. Auto-correlation measurement shows that this source provides an average $g^{(2)}(0)$ value of 0.0174 in the measured excitation-power range. This photon source and fiber coupling are quite rigid against external disturbances such as cooling-heating cycles and vibration, with long-term stability.
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Submitted 12 November, 2017; v1 submitted 11 July, 2017;
originally announced July 2017.
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Dynamic nuclear spin polarization in self-assembled quantum dots under zero magnetic field
Authors:
Ryosuke Matsusaki,
Reina Kaji,
Sohta Yamamoto,
Hirotaka Sasakura,
Satoru Adachi
Abstract:
We studied the zero-field dynamic nuclear spin polarization in a single In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dot. Even without any external magnetic field, the positive trion excited by the circularly-polarized light generated an Overhauser field of up to $\sim$0.8 T. From the excitation power dependences of the Overhauser field and degree of circular polarization of the photolu…
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We studied the zero-field dynamic nuclear spin polarization in a single In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dot. Even without any external magnetic field, the positive trion excited by the circularly-polarized light generated an Overhauser field of up to $\sim$0.8 T. From the excitation power dependences of the Overhauser field and degree of circular polarization of the photoluminescence spectra, the relation between the Overhauser field and Knight field under zero external magnetic field was revealed clearly. In addition, we found that the nuclear depolarization rate decreased as the magnitude of the longitudinal magnetic field increased, which seemed to be caused by the influence of the quadrupolar interaction of nuclear spins. Further, the key parameters describing the dynamics of a coupled electron-nuclear spin system, the electron g-factor and the fluctuation of the Overhauser field, were evaluated in a typical single InAlAs quantum dot.
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Submitted 17 March, 2017;
originally announced March 2017.
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Size distribution of islands according to 2D growth model with 2 kinds of diffusion atoms
Authors:
R. Yamauchi,
X. M. Lu,
M. Koyama,
H. Sasakura,
Y. Nakata,
S. Muto
Abstract:
We simulated the growth of 2D islands with 2 kinds of diffusion atoms using the kinetic Monte- Carlo (kMC) method. As a result, we found that the slow atoms tend to create nuclei and determine the island volume distribution, along with additional properties such as island density. We also conducted a theoretical analysis using the rate equation of the point-island model to confirm these results.
We simulated the growth of 2D islands with 2 kinds of diffusion atoms using the kinetic Monte- Carlo (kMC) method. As a result, we found that the slow atoms tend to create nuclei and determine the island volume distribution, along with additional properties such as island density. We also conducted a theoretical analysis using the rate equation of the point-island model to confirm these results.
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Submitted 15 March, 2015;
originally announced March 2015.
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Carrier flow and nonequilibrium superconductivity in superconductor-based light-emitting diode
Authors:
Ryotaro Inoue,
Hideaki Takayanagi,
Tatsushi Akazaki,
Kazunori Tanaka,
Hirotaka Sasakura,
Ikuo Suemune
Abstract:
Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the gate-controlled region, we confirm the realization of new-type Josephson field effect transistor (JoFET) performance, where the channel cross-sectional area of…
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Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the gate-controlled region, we confirm the realization of new-type Josephson field effect transistor (JoFET) performance, where the channel cross-sectional area of the junction is directly modulated by the gate voltage. In the current-injected region, the superconducting critical current of $μ$A order in the Josephson junction is found to be modulated by the steady current injection of pA order. This ultrahigh monitoring sensitivity of the radiative recombination process can be explained by taking into account the fact that the energy relaxation of the absorbed photons causes the conversion of superconducting pairs to quasiparticles in the active layer. Using quasiparticle density and superconducting pair density, we discuss the carrier flows together with the non-equilibrium superconductovity in the active layer and the superconducting electrodes, which take place for compensating the conversion.
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Submitted 8 December, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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Bidirectional photon extraction from an epitaxially grown semiconductor quantum dot sandwiched by single mode optical fibers
Authors:
H. Sasakura,
X. Liu,
S. Odashima,
H. Kumano,
S. Muto,
I. Suemune
Abstract:
Fiber-based bidirectional photon extraction from nanoscale emitters and photon antibunching behavior between two outputs of two single mode optical fibers are experimentally demonstrated. Flakes of the epitaxial layer containing the InAs quantum dots (QDs) are fixed mechanically by both side with the edge faces of the single-mode-fiber (SMF) patch cables. The emitting photons from the single quant…
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Fiber-based bidirectional photon extraction from nanoscale emitters and photon antibunching behavior between two outputs of two single mode optical fibers are experimentally demonstrated. Flakes of the epitaxial layer containing the InAs quantum dots (QDs) are fixed mechanically by both side with the edge faces of the single-mode-fiber (SMF) patch cables. The emitting photons from the single quantum dot are directly taken out of both side through the SMFs. Single-photon emission between two SMF outputs is confirmed by detecting non-classical antibunching in second-order photon correlation measurements with two superconducting single-photon detectors (SSPDs) and a time-amplitude converter (TAC). This simple opto-mechanical alignment-free single-photon emitter has advantage of robust stability more than 10 days and low-cost fabrication.
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Submitted 14 October, 2012; v1 submitted 11 October, 2012;
originally announced October 2012.
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Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures
Authors:
C. Hermannstädter,
N. A. Jahan,
J. -H. Huh,
H. Sasakura,
K. Akahane,
M. Sasaki,
I. Suemune
Abstract:
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot char…
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We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot charge transfer, as well as, carrier capture and escape mechanisms out of the dots are investigated systematically. This includes the discussion of the dot ensemble and individual dots. Among the single-dot properties, we investigate the transition of emission lines from zero-phonon line to acoustic phonon sideband dominated line shape with temperature. Moreover, the presence of single recombination lines up to temperatures of around 150 K is demonstrated.
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Submitted 13 February, 2012; v1 submitted 7 February, 2012;
originally announced February 2012.
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Telecommunication band InAs quantum dots and dashes embedded in different barrier materials
Authors:
Nahid A Jahan,
Claus Hermannstädter,
Jae-Hoon Huh,
Hirotaka Sasakura,
Thomas J Rotter,
Pankaj Ahirwar,
Ganesh Balakrishnan,
Kouichi Akahane,
Masahide Sasaki,
Hidekazu Kumano,
Ikuo Suemune
Abstract:
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temper…
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We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temperature dependent photoluminescence measurements and theoretical considerations about the heterostructures' confinement energies and band structure. We propose two different contributions to the thermal quenching, which can explain the observations for both the quantum dot and dash samples. Among these one is a unique phenomenon for high density quantum dot/dash ensembles which is related to significant inter-dot/dash coupling. With the goal ahead to use these dots and dashes for quantum optical applications on the single-dot/dash level in the telecommunication C band as well as at elevated temperatures we present first steps towards the realization of such devices.
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Submitted 7 February, 2012;
originally announced February 2012.
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Longitudinal and transverse exciton spin relaxation times in single InP/InAsP/InP nanowire quantum dots
Authors:
H. Sasakura,
C. Hermannstädter,
S. N. Dorenbos,
N. Akopian,
M. P. van Kouwen,
J. Motohisa,
Y. Kobayashi,
H. Kumano,
K. Kondo,
K. Tomioka,
T. Fukui,
I. Suemune,
V. Zwiller
Abstract:
We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well…
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We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the InP nanowire. The longitudinal exciton spin relaxation time was evaluated by the degree of the random polarization of emission originating from exciton state confined in a single nanowire quantum dots by using Mueller Calculus based on Stokes parameters representation.
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Submitted 29 September, 2011;
originally announced September 2011.
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Direct observation of correlation time of dynamic nuclear polarization in single quantum dots
Authors:
R. Kaji,
H. Sasakura,
S. Adachi,
S. Muto
Abstract:
The spin interaction between an electron and nuclei was investigated optically in a single self-assembled InAlAs quantum dot (QD). In spin dynamics, the correlation time of the coupled electron-nuclear spin system and the electron spin relaxation time play a crucial role. We examined on a positively charged exciton in a QD to evaluate these key time constants directly via the temporal evolution me…
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The spin interaction between an electron and nuclei was investigated optically in a single self-assembled InAlAs quantum dot (QD). In spin dynamics, the correlation time of the coupled electron-nuclear spin system and the electron spin relaxation time play a crucial role. We examined on a positively charged exciton in a QD to evaluate these key time constants directly via the temporal evolution measurements of the Overhauser shift and the degree of circular polarization. In addition, the validity of our used spin dynamics model was discussed in the context of the experimentally obtained key parameters.
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Submitted 26 August, 2011;
originally announced August 2011.
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A Cooper pair light emitting diode
Authors:
H. Sasakura,
S. Kuramitsu,
Y. Hayashi,
K. Tanaka,
T. Akazaki,
E. Hanamura,
R. Inoue,
H. Takayanagi,
Y. Asano,
I. Suemune
Abstract:
We demonstrate Cooper-pair's drastic enhancement effect on band-to-band radiative recombination in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode and dramatically accelerate the photon generation rates of a light emitting diode in the optical-fiber communication ba…
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We demonstrate Cooper-pair's drastic enhancement effect on band-to-band radiative recombination in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode and dramatically accelerate the photon generation rates of a light emitting diode in the optical-fiber communication band. Cooper pairs are the condensation of electrons at a spin-singlet quantum state and this condensation leads to the observed enhancement of the electric-dipole transitions. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
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Submitted 27 October, 2009;
originally announced October 2009.
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Single photon interference between two modes originated from a single quantum dot
Authors:
H. Kumano,
S. Ekuni,
H. Nakajima,
M. Jo,
H. Sasakura,
S. Adachi,
S. Muto,
I. Suemune
Abstract:
Interference of a single photon generated from a single quantum dot is observed between two photon polarization modes. Each emitted single photon has two orthogonal polarization modes associated with the solid-state single photon source, in which two non-degenerate neutral exciton states are involved. The interference between the two modes takes place only under the condition that the emitted ph…
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Interference of a single photon generated from a single quantum dot is observed between two photon polarization modes. Each emitted single photon has two orthogonal polarization modes associated with the solid-state single photon source, in which two non-degenerate neutral exciton states are involved. The interference between the two modes takes place only under the condition that the emitted photon is free from which-mode information.
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Submitted 3 September, 2009; v1 submitted 12 August, 2009;
originally announced August 2009.
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Optical-phonon mediated exciton energy relaxation with highly preserved spin states Optical-phonon mediated exciton energy relaxation with highly preserved spin states in a single quantum dot
Authors:
H. Kumano,
H. Kobayashi,
S. Ekuni,
Y. Hayashi,
M. Jo,
H. Sasakura,
S. Adachi,
S. Muto,
I. Suemune
Abstract:
High degree of preservation of spin states during energy relaxation processes mediated by optical phonons is demonstrated in a single quantum dot. Optical-phonon resonance and relevant suppression of spin relaxation are clearly identified as dip structures in photoluminescence excitation spectra probed by the positive trion emission. The absence of continuum states makes this observation possibl…
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High degree of preservation of spin states during energy relaxation processes mediated by optical phonons is demonstrated in a single quantum dot. Optical-phonon resonance and relevant suppression of spin relaxation are clearly identified as dip structures in photoluminescence excitation spectra probed by the positive trion emission. The absence of continuum states makes this observation possible under the cross-circularly polarized detection with respect to a circularly polarized pum**. Consequently, distinguishably high degree of circular polarization up to ~0.85 is achieved without applying external magnetic field at the optical-phonon resonance. Rate equation analysis reveals that the spin-flip probability during energy relaxation is restricted to less than 7.5%. It is also indicated that the spin flip time of the positive trion ground state is extended by more than 3 times compared with that of neutral exciton ground state. This corresponds to the spin flip time longer than 11 ns for the positive trion ground state. The influence of nuclear polarization to the present measurements is also discussed.
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Submitted 7 March, 2008;
originally announced March 2008.
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Precise measurements of electron and hole g-factors of single quantum dots by using nuclear field
Authors:
R. Kaji,
S. Adachi,
H. Sasakura,
S. Muto
Abstract:
We demonstrated the cancellation of the external magnetic field by the nuclear field at one edge of the nuclear polarization bistability in single InAlAs quantum dots. The cancellation for the electron Zeeman splitting gives the precise value of the hole g-factor. By combining with the exciton g-factor that is obtained from the Zeeman splitting for linearly polarized excitation, the magnitude an…
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We demonstrated the cancellation of the external magnetic field by the nuclear field at one edge of the nuclear polarization bistability in single InAlAs quantum dots. The cancellation for the electron Zeeman splitting gives the precise value of the hole g-factor. By combining with the exciton g-factor that is obtained from the Zeeman splitting for linearly polarized excitation, the magnitude and sign of the electron and hole g-factors in the growth direction are evaluated.
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Submitted 30 September, 2007;
originally announced October 2007.
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Hysteretic response of electron-nuclear spin system in single InAlAs quantum dots:Excitation power and polarization dependences
Authors:
R Kaji,
S Adachi,
H Sasakura,
S Muto
Abstract:
We report the hysteresis of optically-pumped nuclear spin polarization and the degree of circular polarization of photoluminescence on the excitation power and electron spin polarization in single InAlAs quantum dots. By increasing (or decreasing) the excitation power at a particular excitation polarization, an abrupt rise (or drop) and a clear hysteretic behavior were observed in the Overhauser…
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We report the hysteresis of optically-pumped nuclear spin polarization and the degree of circular polarization of photoluminescence on the excitation power and electron spin polarization in single InAlAs quantum dots. By increasing (or decreasing) the excitation power at a particular excitation polarization, an abrupt rise (or drop) and a clear hysteretic behavior were observed in the Overhauser shift of the photoluminescence of the exciton and exciton complexes from the same single quantum dot under an external magnetic field of 5 T. However, the degree of circular polarization shows different behaviors between a positively charged exciton and a neutral exciton or biexciton; further, only positively charged exciton exhibits the precisely synchronized change and hysteretic behavior. It is suggested that the electron spin distribution is affected by the flip-flop of electron-nuclear spins. Further, the hysteresis is observed as a function of the degree of circular polarization of the excitation light and its dependence on the excitation power is studied. The saturation of the Overhauser shift after the abrupt rise indicates the almost complete cancellation of the external magnetic field by the nuclear field created within the width that is decided by the correlation time between the electron and the nuclei spin system.
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Submitted 10 September, 2007;
originally announced September 2007.
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Time domain optical manipulation of exciton and nuclear spin in a single self-assembled quantum dot
Authors:
H. Sasakura,
S. Adachi,
S. Muto,
S. Hirose,
H. Z. Song,
M. Takatsu
Abstract:
We have demonstrated experimentally the manipulation of exciton and nuclear spins in a single self-assembled In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dot. The oscillation of exciton and nuclear spin polarizations were clearly observed. The switching of the emissions in Zeeman split pair indicates that the exciton pair with opposite spins was created coherently via the continuum st…
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We have demonstrated experimentally the manipulation of exciton and nuclear spins in a single self-assembled In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dot. The oscillation of exciton and nuclear spin polarizations were clearly observed. The switching of the emissions in Zeeman split pair indicates that the exciton pair with opposite spins was created coherently via the continuum states and that we can control the electron and nuclear spin polarizations only by changing the delay time of the cross-linearly-polarized pulses. These suggest the high potentiality of electron and nuclear spin manipulation in a single QD via the continuum state.
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Submitted 7 August, 2006;
originally announced August 2006.
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Photon-spin qubit-conversion based on Overhauser shift of Zeeman energies in quantum dots
Authors:
S. Muto,
S. Adachi,
T. Yokoi,
H. Sasakura,
I. Suemune
Abstract:
We propose a new method to realize a conversion of photon qubit and spin qubit using the effective magnetic field created by the nuclear polarization known as Overhauser field. We discuss its preliminary experiment on InAlAs/AlGaAs self-assembled quantum dot and also discuss effects of excitons which could destroy the conversion.
We propose a new method to realize a conversion of photon qubit and spin qubit using the effective magnetic field created by the nuclear polarization known as Overhauser field. We discuss its preliminary experiment on InAlAs/AlGaAs self-assembled quantum dot and also discuss effects of excitons which could destroy the conversion.
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Submitted 1 December, 2004;
originally announced December 2004.
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Polarization-dependent shift in excitonic Zeeman splitting of self-assembled InAlAs quantum dots
Authors:
T. Yokoi,
S. Adachi,
H. Sasakura,
S. Muto,
H. Z. Song,
T. Usuki,
S. Hirose
Abstract:
We report the optical spectroscopic results of a single self-assembled InAlAs/Al GaAs quantum dot. The polarization-dependent shift of the Zeeman splitting in a single InAlAs QD has been observed. The induced Overhauser field is estimated to be 0.16 T in this InAlAs QD and the magnitude is shown to be controllable by the degree of circular polarization of excitation light.
We report the optical spectroscopic results of a single self-assembled InAlAs/Al GaAs quantum dot. The polarization-dependent shift of the Zeeman splitting in a single InAlAs QD has been observed. The induced Overhauser field is estimated to be 0.16 T in this InAlAs QD and the magnitude is shown to be controllable by the degree of circular polarization of excitation light.
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Submitted 9 July, 2004;
originally announced July 2004.
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Quantum gates using two-electron states of triple quantum dot
Authors:
H. Sasakura,
S. Muto
Abstract:
Quantum computation using electron spins in three coupled dot with different size is proposed. By using the energy selectivity of both photon assisted tunneling and spin rotation of electrons, logic gates are realized by static and rotational magnetic field and resonant optical pulses. Possibility of increasing the number of quantum bits using the energy selectivity is also discussed.
Quantum computation using electron spins in three coupled dot with different size is proposed. By using the energy selectivity of both photon assisted tunneling and spin rotation of electrons, logic gates are realized by static and rotational magnetic field and resonant optical pulses. Possibility of increasing the number of quantum bits using the energy selectivity is also discussed.
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Submitted 26 October, 1999; v1 submitted 25 October, 1999;
originally announced October 1999.
