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Anisotropic Third Harmonic Generation in Two-Dimensional Tin Sulfide
Authors:
George Miltos Maragkakis,
Sotiris Psilodimitrakopoulos,
Leonidas Mouchliadis,
Abdus Salam Sarkar,
Andreas Lemonis,
George Kioseoglou,
Emmanuel Stratakis
Abstract:
The in-plane anisotropic properties of two-dimensional (2D) group IV monochalcogenides provide an additional degree of freedom which can be used in future optoelectronic devices. Here, it is shown that the third harmonic generation (THG) signal produced by ultrathin tin (II) sulfide (SnS) is in-plane anisotropic with respect to the incident linear polarization of the laser field. We fit the experi…
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The in-plane anisotropic properties of two-dimensional (2D) group IV monochalcogenides provide an additional degree of freedom which can be used in future optoelectronic devices. Here, it is shown that the third harmonic generation (THG) signal produced by ultrathin tin (II) sulfide (SnS) is in-plane anisotropic with respect to the incident linear polarization of the laser field. We fit the experimental polarization-resolved THG (P-THG) measurements with a nonlinear optics model, which accounts for the orthorhombic crystal structure of 2D SnS. We calculate the relative magnitudes of the \{chi}^(3) tensor components by recording and simultaneously fitting both orthogonal components of the P-THG intensity. Furthermore, we introduce a THG anisotropy ratio, whose calculated values compare the total THG intensity when the excitation linear polarization is along the armchair crystallographic direction with the case when it is along the zigzag direction. Our results provide quantitative information on the anisotropic nature of the THG process in SnS, paving the way to a better understanding of anisotropic nonlinear light-matter interactions, and the development of polarization-sensitive nonlinear optical devices.
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Submitted 27 May, 2024;
originally announced May 2024.
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Nonlinear optical imaging of in-plane anisotropy in two-dimensional SnS
Authors:
G. M. Maragkakis,
S. Psilodimitrakopoulos,
L. Mouchliadis,
A. S. Sarkar,
A. Lemonis,
G. Kioseoglou,
E. Stratakis
Abstract:
Two-dimensional (2D) tin(II) sulfide (SnS) crystals belong to a class of orthorhombic semiconducting materials that are lately attracting significant interest, given their remarkable properties, such as in-plane anisotropic optical and electronic response, multiferroic nature and lack of inversion symmetry. The 2D SnS crystals exhibit anisotropic response along the in-plane armchair (AC) and zigza…
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Two-dimensional (2D) tin(II) sulfide (SnS) crystals belong to a class of orthorhombic semiconducting materials that are lately attracting significant interest, given their remarkable properties, such as in-plane anisotropic optical and electronic response, multiferroic nature and lack of inversion symmetry. The 2D SnS crystals exhibit anisotropic response along the in-plane armchair (AC) and zigzag (ZZ) crystallographic directions, offering an additional degree of freedom in manipulating their behavior. Therefore, calculating the AC/ZZ directions is important in characterizing the 2D SnS crystals. In this work, we take advantage of the lack of inversion symmetry of the 2D SnS crystal, that produces second harmonic generation (SHG), to perform polarization-resolved SHG (P-SHG) nonlinear imaging of the in-plane anisotropy. We fit the P-SHG experimental data with a nonlinear optics model, that allows us to calculate the AC/ZZ orientation from every point of the 2D crystal and to map with high-resolution the AC/ZZ direction of several 2D SnS flakes belonging in the same field of view. It is found that the P-SHG intensity polar patterns are associated with the crystallographic axes of the flakes and with the relative strength of the second order nonlinear susceptibility tensor in different directions. Therefore, our method provides quantitative information of the optical in-plane anisotropy of orthorhombic 2D crystals, offering great promise for performance characterization during device operation in the emerging optoelectronic applications of such crystals.
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Submitted 9 December, 2021;
originally announced December 2021.
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In-plane anisotropic quantum confinement effect in ultrasmall SnS sheets
Authors:
Abdus Salam Sarkar,
Anita Kumari,
Anchala,
Nagaraju Nakka,
Rajeev Ray,
Emmanuel Stratakis,
Suman Kalyan Pal
Abstract:
Black phosphorus (BP) analogous tin(II) sulfide (SnS) has recently emerged as an attractive building block for electronic devices due to its highly anisotropic response. Two-dimensional (2D) SnS has shown to exhibit in-plane anisotropy in optical and electrical properties. However, the limitations in growing ultrasmall structures of SnS hinder the experimental exploration of anisotropic behavior i…
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Black phosphorus (BP) analogous tin(II) sulfide (SnS) has recently emerged as an attractive building block for electronic devices due to its highly anisotropic response. Two-dimensional (2D) SnS has shown to exhibit in-plane anisotropy in optical and electrical properties. However, the limitations in growing ultrasmall structures of SnS hinder the experimental exploration of anisotropic behavior in low dimension. Here, we present an elegant approach of synthesizing highly crystalline nanometer-sized SnS sheets. Ultrasmall SnS exhibits two distinct valleys along armchair and zig-zag directions due to in-plane structural anisotropy like bulk SnS. We show that in such SnS nanosheet dots, the band gaps corresponding to two valleys are increased due to quantum confinement effect. We particularly observe that SnS quantum dots (QDs) show excitation energy dependent photoluminescence (PL), which originates from the two nondegenerate valleys. Our work may open up an avenue to show the potential of SnS QDs for new functionalities in electronics and optoelectronics.
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Submitted 20 June, 2021;
originally announced June 2021.
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Dispersion behavior of two dimensional monochalcogenides
Authors:
Abdus Salam Sarkar,
Emmanuel Stratakis
Abstract:
Solution processable two-dimensional (2D) materials have provided an ideal platform for both fundamental studies and wearable electronic applications. Apart from graphene and 2D dichalcogenides, IVA-VI monochalcogenides (MMCs) has emerged recently as a promising candidate for next generation electronic applications. However, the dispersion behavior, which is crucial for the quality, solubility and…
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Solution processable two-dimensional (2D) materials have provided an ideal platform for both fundamental studies and wearable electronic applications. Apart from graphene and 2D dichalcogenides, IVA-VI monochalcogenides (MMCs) has emerged recently as a promising candidate for next generation electronic applications. However, the dispersion behavior, which is crucial for the quality, solubility and stability of MMCs, has been quite unexplored. Here, the exfoliation and the dispersion behavior of Germanium (II) monosulfide (GeS) and Tin (II) monosulfide (SnS) nanosheets has been investigated in a wide range of organic solvents. Nine different organic solvents were examined and analyzed, considering the solvent polarity, surface tension, and Hansen solubility parameters. A significant yield of isolated GeS and SnS flakes, namely ~16.4 and ~23.08 μg/ml in 2-propanol and N-Methyl-2-pyrrolidone respectively were attained. The isolated flakes are few-layers nanosheets with lateral sizes over a few hundreds of nanometers. The MMCs colloids exhibit long-term stability, suggesting the MMCs applicability for scalable solution processable printed electronic device applications.
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Submitted 7 December, 2020;
originally announced December 2020.
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Recent Advances in Two-Dimensional Metal Monochalcogenides
Authors:
Abdus Salam Sarkar,
Emmanuel Stratakis
Abstract:
The family of emerging low-symmetry and structural in-plane anisotropic 2D materials have been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene (BP) analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth…
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The family of emerging low-symmetry and structural in-plane anisotropic 2D materials have been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene (BP) analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundant and environmentally friendly characteristics. In this article, we review the recent research advancements in the field of anisotropic 2D MMCs. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this review also delineates the existing limitations and discusses emerging possibilities and future prospects.
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Submitted 2 November, 2020;
originally announced November 2020.
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Robust B-exciton emission at room temperature in few-layers of MoS2:Ag nanoheterojunctions embedded into a glass matrix
Authors:
Abdus Salam Sarkar,
Ioannis Konidakis,
Ioanna Demeridou,
Efthymis Serpetzoglou,
George Kioseoglou,
Emmanuel Stratakis
Abstract:
Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely…
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Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely unexplored. Here, we put forward a novel nano-heterojunction system, prepared with a non-lithographic process, to enhance and control such emission. It is based on the incorporation of few-layers MoS2 into a plasmonic silver metaphosphate glass (AgPO3) matrix. It is shown that, apart from the enhancement of the emission of both A and B excitons, the B-excitonic emission dominates the PL intensity. In particular, we observe an almost six-fold enhancement of the B exciton emission, compared to control MoS2 samples. This enhanced PL at room temperature is attributed to an enhanced exciton-plasmon coupling and it is supported by ultrafast time-resolved spectroscopy that reveals plasmon-enhanced electron transfer that takes place in Ag nanoparticles-MoS2 nanoheterojunctions. Our results provide a great avenue to tailor the emission properties of few-layers MoS2, which could find application in emerging valleytronic devices working with B excitons.
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Submitted 22 October, 2020; v1 submitted 6 May, 2020;
originally announced May 2020.
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Strong many-body interactions in ultrathin anisotropic tin (II) monosulfide
Authors:
Abdus Salam Sarkar,
Aamir Mushtaq,
Dushyant Kushavah,
Suman Kalyan Pal
Abstract:
Two-dimensional (2D) tin(II) monosulfide (SnS) with strong structural anisotropy has been proven to be a phosphorene analogue. However, difficulty in isolating very thin layer of SnS pose challenges in practical utilization. Here, we prepare ultrathin SnS via liquid phase exfoliation. With transmission electron microscopy, we identify the buckled structure of 2D SnS. We employ temperature dependen…
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Two-dimensional (2D) tin(II) monosulfide (SnS) with strong structural anisotropy has been proven to be a phosphorene analogue. However, difficulty in isolating very thin layer of SnS pose challenges in practical utilization. Here, we prepare ultrathin SnS via liquid phase exfoliation. With transmission electron microscopy, we identify the buckled structure of 2D SnS. We employ temperature dependent Raman spectroscopy to elucidate electron-phonon interactions, which reveals a linear phonon shifts. The active Raman modes of ultrathin SnS exhibit higher sensitivity to temperature than other 2D materials. Moreover, we demonstrate strong light-matter interaction in ultrathin SnS using Z-scan and ultrafast spectroscopy. Rich exciton-exciton and coherent exciton-photon interactions arising from many-particle excited effects in ultrathin SnS eventually enhances the nonlinear optical properties. Our findings highlight the prospects for the synthesis of ultrathin anisotropic SnS towards the betterment of thermoelectric and photonic devices.
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Submitted 14 December, 2019; v1 submitted 31 October, 2018;
originally announced November 2018.
