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Growth of large-sized relaxor ferroelectric PZN-PT single crystals by modified flux growth method
Authors:
P. Vijayakumar,
C. Manikandan,
R. M. Sarguna,
Edward Prabu Amaladass,
K. Ganesan,
Varsha Roy,
E. Varadarajan,
S. Ganesamoorthy
Abstract:
A novel bottom-cooling high-temperature solution growth technique is developed for growing large-sized relaxor ferroelectric 0.91Pb(Zn1/3Nb2/3O3)-0.09PbTiO3 (PZN-PT) single crystals. During the growth, an inverse temperature gradient is maintained in the crucible base by flowing air at a controlled rate. This method restricts the number of spontaneously nucleated crystals at crucible bottom, reduc…
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A novel bottom-cooling high-temperature solution growth technique is developed for growing large-sized relaxor ferroelectric 0.91Pb(Zn1/3Nb2/3O3)-0.09PbTiO3 (PZN-PT) single crystals. During the growth, an inverse temperature gradient is maintained in the crucible base by flowing air at a controlled rate. This method restricts the number of spontaneously nucleated crystals at crucible bottom, reduces loss of volatile PbO component and favours the growth of large-sized PZN-PT single crystals. Large-sized PZN-PT single crystals of dimensions ~ 22x20x14 mm3 are reproducibly grown by the proposed method. The electrical characteristics of the PZN-PT wafers oriented along the <100>, <010> and <001> directions are investigated. PZN-PT wafers oriented along the <001> direction exhibited superior piezoelectric coefficient (d33) of ~ 2221 pm/V. The homogeneity of the physical parameters is analysed by preparing 10 elements with dimensions of ~5x2.5x2.5 mm3 which were cut from single wafer oriented along the <001> direction. The ferro-, piezo- and dielectric characteristics of these wafers were found to be highly uniform with small standard deviation. The observation of d33 value with less than 2 % deviation from mean value confirms the growth of high quality PZN-PT single crystals.
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Submitted 11 December, 2023;
originally announced December 2023.
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Development of travelling heater method for growth of detector grade CdZnTe single crystals
Authors:
P. Vijayakumar,
Edward Prabu Amaladass K. Ganesan R. M. Sarguna,
Varsha Roy,
S. Ganesamoorthy
Abstract:
We report on the indigenous design and development of laboratory scale travelling heater method (THM) system to grow detector grade Cd0.9Zn0.1Te (CdZnTe) single crystals. THM system mainly consists of two-zone furnace with a tuneable temperature gradient (30 - 80 C/cm), high precision translation (1 - 25 mm per day) and rotation (1 - 50 rpm) assemblies to meet the stringent conditions that are ess…
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We report on the indigenous design and development of laboratory scale travelling heater method (THM) system to grow detector grade Cd0.9Zn0.1Te (CdZnTe) single crystals. THM system mainly consists of two-zone furnace with a tuneable temperature gradient (30 - 80 C/cm), high precision translation (1 - 25 mm per day) and rotation (1 - 50 rpm) assemblies to meet the stringent conditions that are essential to grow detector grade CdZnTe single crystals. Further, a load cell in the THM system enables continuous monitoring of the growth. Systematic growth experiments were performed to optimize the various growth parameters in order to achieve large grain single crystals. Herein, the effect of temperature gradient and growth rate on the increase in grain size is discussed in detail. Each successful growth experiment yields a minimum of four detector grade elements of dimensions 10 x 10 x 5 mm3 from a starting charge of 100 g of CdZnTe. The crystalline nature and quality of the detector elements were evaluated using Laue, NIR transmission spectroscopy and I-V characteristics. Crystals with resistivity greater than ~ 1-10 giga-ohm-cm were identified for testing gamma ray detection. The photo peak of 137Cs was resolved with an energy resolution of 4.2 % at 662 keV and its measured electron mobility lifetime product is found to be ~ 3.3 x 10-3 cm2/V. The demonstration of the gamma ray detection with a relatively high μτ product is the testimony to the successful growth of detector grade CdZnTe single crystals by an indigenously developed THM system.
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Submitted 11 December, 2023;
originally announced December 2023.
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Exploring the substrate-driven morphological changes in Nd0.6Sr0.4MnO3 thin films
Authors:
R S Mrinaleni,
E P Amaladass,
S Amirthapandian,
A. T. Sathyanarayana,
Jegadeesan P,
Ganesan K,
R M Sarguna,
P. N. Rao,
Pooja Gupta,
T Geetha Kumary,
S. K. Rai,
Awadhesh Mani
Abstract:
Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications in oxitronics. This work reports the morphological, structural, and electrical transport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films fabricated…
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Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications in oxitronics. This work reports the morphological, structural, and electrical transport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films fabricated using the pulsed laser deposition technique. Scanning electron microscopy (SEM) imaging of the thin films revealed two prominent surface morphologies: a granular and a unique crossed-nano-rod-type morphology. From X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis, we found that the observed nanostructures resulted from altered growth modes occurring on the terraced substrate surface. Furthermore, investigations on the electrical-transport properties of thin films revealed that the films with crossed-nano-rod type morphology showed a sharp resistive transition near the metal-to-insulator transition (MIT). An enhanced temperature coefficient of resistance (TCR) of up to one order of magnitude was also observed compared to the films with granular morphology. Such enhancement in TCR % by tuning the morphology makes these thin films promising candidates for develo** oxide-based temperature sensors and detectors.
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Submitted 13 January, 2023;
originally announced January 2023.
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Raman and photoluminescence spectroscopic studies on structural disorder in oxygen deficient Gd2Ti2O7-d single crystals
Authors:
M. Suganya,
K. Ganesan,
P. Vijayakumar,
Amirdha Sher Gill,
S. K. Srivastava,
Ch. Kishan singh,
R. M. Sarguna,
P. K. Ajikumar,
S. Ganesamoorthy
Abstract:
We report on Raman and photoluminescence spectroscopic studies on oxygen vacancy induced structural disorder in Gd2Ti2O7-d single crystals grown by optical floating zone technique under argon atmosphere. The oxygen vacancies in Gd2Ti2O7-d wafers decrease with thermal annealing in an air atmosphere. The full width at half maximum of X-ray diffraction rocking curve decreases from 245 to 157 arc-seco…
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We report on Raman and photoluminescence spectroscopic studies on oxygen vacancy induced structural disorder in Gd2Ti2O7-d single crystals grown by optical floating zone technique under argon atmosphere. The oxygen vacancies in Gd2Ti2O7-d wafers decrease with thermal annealing in an air atmosphere. The full width at half maximum of X-ray diffraction rocking curve decreases from 245 to 157 arc-second and the optical transmittance increases from 23 to 87 % (at 1000 nm) upon post growth thermal annealing. Raman spectroscopic studies reveal a monotonic increase in intensity of O-Gd-O (Eg) and Ti-O (A1g) stretching modes with thermal annealing. Since these modes are associated with modulation of oxygen x parameter which is sensitive to Ti-O octahedron distortion, the increase in Raman intensity indicates an improvement in structural ordering of oxygen sub-lattice in Gd2Ti2O7-d. Moreover, the photoluminescence studies also corroborate the Raman analysis in terms of reduction of structural defects associated with oxygen vacancies as a function of thermal annealing. This study demonstrates the effectiveness of using Raman spectroscopy to probe the structural disorder in Gd2Ti2O7-d crystals.
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Submitted 19 January, 2022;
originally announced January 2022.
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Structural and optical properties of beta irradiated YAlO3 single crystals
Authors:
M. Suganya,
K. Ganesan,
P. Vijayakumar,
S. Jakathamani,
Amirdha Sher Gill,
O. Annalakshmi,
S. K. Srivastava,
R. M. Sarguna,
S. Ganesamoorthy
Abstract:
We report on the growth, structural and optical properties of YAlO3 single crystals grown by optical floating zone technique. Powder X-ray diffraction and Raman spectroscopic studies confirm the phase purity of the crystals. Raman analysis reveals that the intensity and line-width of Raman bands increase significantly with beta irradiation indicating the formation of structural defects in YAlO3 la…
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We report on the growth, structural and optical properties of YAlO3 single crystals grown by optical floating zone technique. Powder X-ray diffraction and Raman spectroscopic studies confirm the phase purity of the crystals. Raman analysis reveals that the intensity and line-width of Raman bands increase significantly with beta irradiation indicating the formation of structural defects in YAlO3 lattice. The optical properties are studied through UV-visible absorption, and photoluminescence emission and excitation spectroscopies under pre- and post- beta irradiation. The optical studies indicate the presence of Sm and Cr impurities by exhibiting characteristic emission lines in the orange red region. Further, a systematic study on the thermoluminescence (TL) characteristics of the crystal is also carried out at different doses of beta irradiation. The crystals exhibit a prominent TL glow peak at 239 C for less than 5 Gy doses while a weak second glow peak evolves at higher doses. Also, the crystals show a nearly linear dose response in the studied range from 0.1 to 10 Gy. The glow curve analysis reveals that the TL emission obeys the first order kinetics model. Based on the optical studies, the plausible mechanism for the TL glow curve is discussed in terms of the intrinsic defects and impurities that are present in the crystal.
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Submitted 5 June, 2020;
originally announced June 2020.
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Studies on dielectric relaxation in ceramic multiferroic Gd1-xYxMnO3
Authors:
R. M. Sarguna,
V. Sridahran,
A. M. Awasthi,
N. Subramanian
Abstract:
Dielectric study over a broadband was carried out from 10 to 70 K on ceramic Gd1-xYxMnO3 (x= 0.2, 0.3, and 0.4). For all the compositions, a prominent sharp peak about ~18K was observed in the temperature dependence of both ε'(T) and ε"(T) at all frequencies, indicating a long-range ferroelectric (FE) transition. Using Cole-Cole fit to the permittivity data, the relaxation time τ and the dielectri…
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Dielectric study over a broadband was carried out from 10 to 70 K on ceramic Gd1-xYxMnO3 (x= 0.2, 0.3, and 0.4). For all the compositions, a prominent sharp peak about ~18K was observed in the temperature dependence of both ε'(T) and ε"(T) at all frequencies, indicating a long-range ferroelectric (FE) transition. Using Cole-Cole fit to the permittivity data, the relaxation time τ and the dielectric strength Δε were estimated. Temperature variation of τ(T) in the Arrhenius representation is found to be nonlinear (non-Debyean relaxation), with increasing barrier-activation energy over successive temperature-windows. Interestingly, for all the compositions, we witness a jump in τ(T) about the ferroelectric transition temperature, concurred by a broad-maximum in Δε(T), signifying the critical slowdown of relaxations near long-range FE-correlations.
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Submitted 27 June, 2017;
originally announced June 2017.
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Superconducting Fe(1+delta)Se(1-x)Te(x) thin films: Growth, characterization and properties
Authors:
T. Geetha Kumary,
Dipak Kumar Baisnab,
J. Janaki,
Awadhesh Mani,
R. M. Sarguna,
P. K. Ajikumar,
A. K. Tyagi,
A. Bharathi
Abstract:
Thin films of Fe(1+delta)Se(1-x)Te(x) (delta ~ 0.18 & x ~ 0.5) have been successfully grown on (100) oriented single crystalline SrTiO3 and LaAlO3 substrates by pulsed laser deposition. The crystal structure was characterized by x-ray diffraction, and the superconducting properties by electrical resistivity measurements. X-ray diffraction analysis establishes the epitaxial growth of the films wi…
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Thin films of Fe(1+delta)Se(1-x)Te(x) (delta ~ 0.18 & x ~ 0.5) have been successfully grown on (100) oriented single crystalline SrTiO3 and LaAlO3 substrates by pulsed laser deposition. The crystal structure was characterized by x-ray diffraction, and the superconducting properties by electrical resistivity measurements. X-ray diffraction analysis establishes the epitaxial growth of the films with c-axis orientation. Atomic force microscopy showed a smooth surface morphology for the films grown on SrTiO3 substrates. All the films are observed to be superconducting with a Tc of ~ 8-14 K depending on the deposition conditions. The deposition parameters were optimized to obtain good quality films with Tc comparable to that of the target material.
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Submitted 9 April, 2009;
originally announced April 2009.
