Showing 1–8 of 8 results for author: Saranin, D S

Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric

Authors: A. P. Morozov, L. O. Luchnikov, S. Yu. Yurchuk, A. R. Ishteev, P. A. Gostishchev, S. I. Didenko, N. S. Saratovsky, S. S. Kozlov, D. S. Muratov, Yu. N. Luponosov, D. S. Saranin

Abstract: Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele… ▽ More Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trap** processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Tailoring wetting properties of organic hole-transport interlayers for slot-die coated perovskite solar modules

Authors: T. S. Le, I. A. Chuykoa, L. O. Luchnikova, K. A. Ilicheva, P. O. Sukhorukova, D. O. Balakirev, N. S. Saratovsky, A. O. Alekseev, S. S. Kozlov, D. S. Muratov, V. V. Voronov, P. A. Gostishchev, D. A. Kiselev, T. S. Ilina, A. A. Vasilev, A. Y. Polyakov, E. A. Svidchenko, O. A. Maloshitskaya, Yu. N. Luponosov, D. S. Saranin

Abstract: The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrat… ▽ More The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrate a triphenylamine-based polymer, pTPA-TDP, blended with SAM based on 5-[4-[4-(diphenylamino) phenyl] thiophene-2-carboxylic acid (TPATC), to address the challenges of uniform slot-die coating and interface passivation in large-area modules. We fabricated p-i-n oriented PSMs on 50x50 mm2 substrates (12-sub-cells) with NiO hole transport layer (HTL) and organic interlayers for surface modification. Wetting angle map** demonstrated that ununiform regions of the slot-die coated SAM have hydrophobicity with contact angle values up to 90°, causing fluctuations in absorber thickness and the presence of macro-defects at buried interfaces. The incorporation of the blended interlayer to NiO/perovskite junction homogenized the surface wettability (contact angle=40°) and mitigated lattice strain in the absorber. This enabled the effective use of SAM properties on a large-area surface, improving energy level alignment and enhancing the power conversion efficiency (PCE) of the modules from 13.98% to 15.83% and stability (ISOS-L-2, T80 period) from 500-1000 hours to 1630 hours. Investigation of PSMs upon cooling till -5 °C showed that the PCE increased by +0.19%/°C for samples with NiO HTL, while using SAM and blended interlayers raised the coefficient to ~0.40%/°C due to changes in activation energy and trap contributions to device performance across a wide temperature range. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Micro pixelated halide perovskite photodiodes fabricated with ultraviolet laser scribing

Authors: A. P. Morozov, P. A. Gostishchev, A. Zharkova, A. A. Vasilev, A. E. Aleksandrov, A. R. Tameev, A. R. Ishteev, S. I. Didenko, D. S. Saranin

Abstract: In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully manufactured PPDs with pixel configurations of 70x130 um2, 520x580 um2, and 2000x2000 um2. The utilization of UV-LS has a proven efficiency in achieving relevant… ▽ More In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully manufactured PPDs with pixel configurations of 70x130 um2, 520x580 um2, and 2000x2000 um2. The utilization of UV-LS has a proven efficiency in achieving relevant diode characteristics, such as low dark currents and high shunt resistance, as well as ultrafast response. The multi-step scribing cycle provided precise patterning of perovskite photodiodes (PPDs) in a string design. The dark current densities demonstrated exceptional uniformity, ranging from 10-10 A/cm2 for 2000x2000 um2 pixelated PPDs to 10-9 A/cm2 for the 70x130 um2 configuration. The string PPDs, consisting of 10 pixels per string, displayed homogenous dark current values, ensuring effective isolation between devices. Under green light illumination (540 nm), all PPD types exhibited a broad Linear Dynamic Range (LDR). Specifically, LDR values reached 110 dB, 117 dB, and 136 dB for 70x130, 520x580, and 2000x2000 devices, respectively, spanning an illumination intensity range from 2*10-3 mW/cm2 to 2 mW/cm2. High responsivity values up to 0.38 A/W, depending on the PPDs geometry, highlight the potential of laser scribing devices for sensing in the visible range. The calculated specific detectivity performance (from 1011 to 1013 Jones) surpasses commercial analogs, while the sub-microsecond response of 70x130 um2 and 520x580 um2 miniaturized devices underscores their suitability for precise time resolution detection systems. △ Less

Submitted 9 December, 2023; originally announced December 2023.

Triphenylamine-based interlayer with carboxyl anchoring group for tuning of charge collection interface in stabilized p-i-n perovskite solar cells and modules

Authors: P. K. Sukhorukova, E. A. Ilicheva, P. A. Gostishchev, L. O. Luchnikov, M. M. Tepliakova, D. O. Balakirev, I. V. Dyadishchev, A. A. Vasilev, D. S. Muratov, Yu. N. Luponosov, A. Di Carlo, D. S. Saranin

Abstract: A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase… ▽ More A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase composition evolution, and up-scaling capabilities. Our investigation shows that the ultrathin TPATC interlayer effectively passivates traps, increases work-function of HTL by about ~0.2 eV, and enhances the charge carrier extraction efficiency. Advanced transient spectroscopy measurements revealed that modification of the NiO surface with TPATC in perovskite solar cells (PSCs) reduces the concentration of ionic defects by an order of magnitude. Interface engineering with TPATC allowed to reach power conversion efficiency of 20.58% for small area devices (0.15 cm2) under standard AM 1.5 G conditions. Using TPATC interlayer also provided stabilized performance of PSCs under operation conditions and improved sustainability of the perovskite absorber to decomposition. After continuous light-soaking (1000 h, ISOS-L-2 protocol), NiO/TPATC devices showed a slight decrease of 2% in maximum power. In contrast, NiO PSCs demonstrated decrease in power output (>20%) after 400 h. We explored the potential of TPATC to modify interfaces in large-area perovskite solar modules (PSM, active area-64.8 cm2, 12 sub-cells). By applying slot-die-coated TPATC, the PCE at AM 1.5 G conditions increased from 13.22% for NiO PSM to 15.64% for NiO/TPATC ones. This study provides new insights into the interface engineering for p-i-n perovskite solar cells, behavior of the ionic defects and their contribution to the long-term stability. △ Less

Submitted 22 November, 2023; originally announced November 2023.

MAPbBr3 monocrystals under electron beam radiolysis and degradation revealed by cathodoluminescence spectroscopy

Authors: Yu. O. Kulanchikov, P. S. Vergeles, K. Konstantinova, A. R. Ishteev, D. S. Muratov, E. E. Yakimov, E. B. Yakimov, D. S. Saranin

Abstract: Study of the local optical properties using electron beam (e-beam) can provide a valuable information concerning the inspection of the materials quality, the presence of the different phase inclusions and defects. Halide perovskites have been shown to be highly sensitive to external stress conditions like ambient atmosphere, light, and heat. In this paper, the cathodoluminescence (CL) spectroscopy… ▽ More Study of the local optical properties using electron beam (e-beam) can provide a valuable information concerning the inspection of the materials quality, the presence of the different phase inclusions and defects. Halide perovskites have been shown to be highly sensitive to external stress conditions like ambient atmosphere, light, and heat. In this paper, the cathodoluminescence (CL) spectroscopy has been exploited to carry out the investigation of CH3NH3PbBr3 monocrystals under low energy electron beam irradiation. The CL spectra exhibited strong transformation with the increase of the irradiation dose and significant shifts of the peak maximums from 2.23 eV to >2.5 eV. Utilizing a larger e-beam energy (>20 keV) was found to be preferable to slow down the dynamics of the decomposition and corrosion. The mechanisms of the changes in MAPbBr3 properties after e-beam exposure and correlation to the in-depth distribution of deposited energy were discussed. △ Less

Submitted 11 May, 2023; originally announced May 2023.

Comments: 8 pages, 3 figures

Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking

Authors: A. A. Vasilev, D. S. Saranin, P. A. Gostishchev, M. P. Tuhova, S. I. Didenko, A. Y. Polyakov, A. Di Carlo

Abstract: The long-term stability of halide perovskite solar cells (PSCs) remains the critical problem of this photovoltaic technology. Different structural defects formed in the thin-film perovskite films were considered as a main trigger for the decomposition of the absorber and corrosion of the interfaces in the device structure. The changes in the stability performance of the PSCs require a detailed ana… ▽ More The long-term stability of halide perovskite solar cells (PSCs) remains the critical problem of this photovoltaic technology. Different structural defects formed in the thin-film perovskite films were considered as a main trigger for the decomposition of the absorber and corrosion of the interfaces in the device structure. The changes in the stability performance of the PSCs require a detailed analysis of the defects generated under external stress (light and heat). Using admittance, deep-level transient spectroscopy (DLTS) and reverse DLTS we determined the evolution of the defect energy levels in p-i-n PCS under continuous light soaking stress. We compared the impact of the charged defects on the performance and long-term stability of the CsFAPbI3 based devices with and without Cl-do**. Despite the gain in the output performance of the PCSs, the devices with CsFAPbI3-xClx showed improved light soaking stability. The T80 (time required to reduce initial efficiency by 20%) for Cl-doped PSCs was 1280h, while for pure CsFAPbI3 based devices only 650h. Three different defect energy levels were determined for different device configurations. We found that Cl-do** suppressed the formation of the antisite defects (IPb, IFA) and iodine interstitials (Ii). The changes in the defect's energy levels after continuous light soaking stress were analyzed and discussed. The present work provides new insights for the defect behavior of PSCs under continuous external stress, revealing the physical-chemical impact of the Cl-additive strategy. △ Less

Submitted 20 October, 2022; originally announced October 2022.

Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV

Authors: D. S. Saranin, D. S. Muratov, R. Haroldson, A. G. Nasibulin, A. R. Ishteev, D. V. Kuznetsov, M. N. Orlova, S. I. Didenko, A. A. Zakhidov

Abstract: We demonstrate an ionically gated planar PS-PV solar cell with ultra-thick fullerene ETL with a porous CNT electron collector on top of it. Perovskite photovoltaic devices usually have undoped electron transport layers, usually thin like C60 due to its high resistance. Metallic low work function cathodes are extremely unstable in PS-PV due to reaction with halogens I-/Br-, and it would be desirabl… ▽ More We demonstrate an ionically gated planar PS-PV solar cell with ultra-thick fullerene ETL with a porous CNT electron collector on top of it. Perovskite photovoltaic devices usually have undoped electron transport layers, usually thin like C60 due to its high resistance. Metallic low work function cathodes are extremely unstable in PS-PV due to reaction with halogens I-/Br-, and it would be desirable to have stable carbon cathodes on top of thick low resistance ETL for enhancing the stability of PS-PVs. We show that gating such top CNT cathode in ionic liquid, as part of a supercapacitor charged by Vg tunes the Fermi level of CNT by EDL charging, and causes lowering of a barrier at of C60/C70 ETL. Moreover, at higher gating voltage ions further propagates into fullerene by electrochemical n-do**, which increases dramatically PV performance by raising mostly two parameters: Isc and FF, resulting in PCE efficiency raised from 3 % to 11 %. N-do** of ETL strongly enhances charge collection by ETL and CNT raising Isc and lowering series resistance and thus increasing strongly PCE. Surprisingly Voc is not sensitive in PS-PV to external Vg gating, on the contrary, to strongly enhanced Voc in ionically gated organic PV, where it is the main gating effect. This insensitivity of Voc to lowering of the work function of Vg gated CNT electrode is a clear indication that Voc in PS-PV is determined by inner p-i-n junction formation in PS itself, via accumulation of its intrinsic mobile ionic species halogens and cations and their vacancies. △ Less

Submitted 6 November, 2019; originally announced November 2019.

Comments: 19 pages, 6 figures

Ionically Gated Small Molecule OPV: Interfacial do** of Charge collector and Transport layer

Authors: Danila S. Saranin, Abolfazl Mahmoodpoor, Pavel M. Voroshilov, Constantin R. Simovski, Anvar A. Zakhidov

Abstract: We demonstrate an improvement in the performance of organic photovoltaic (OPV) systems based on small molecules by ionic gating via controlled reversible n-do** of multi-wall carbon nanotube (MWCNT) coated on fullerenes ETL: C60 and C70. Such electric double layer charging (EDLC) do**, achieved by ionic liquid (IL) charging, allows tuning the electronic concentration in MWCNT and in the fuller… ▽ More We demonstrate an improvement in the performance of organic photovoltaic (OPV) systems based on small molecules by ionic gating via controlled reversible n-do** of multi-wall carbon nanotube (MWCNT) coated on fullerenes ETL: C60 and C70. Such electric double layer charging (EDLC) do**, achieved by ionic liquid (IL) charging, allows tuning the electronic concentration in MWCNT and in the fullerene planar acceptor layers, increasing it by orders of magnitude. This leads to decreasing the series and increasing the shunt resistances of OPV and allows to use of thick (up to 200 nm) ETLs, increasing the durability and stability of OPV. Two stages of OPV enhancement are described, upon the increase of gating bias Vg: at small (or even zero) Vg the extended interface of IL and porous transparent MWCNT is charged by gating, and the fullerene charge collector is significantly improved, becoming an ohmic contact. This changes the S-shaped I-V curve via improving the electron collection by n-doped MWCNT cathode with ohmic interfacial contact. The I-V curves further improve at higher gating bias Vg due to the raising of the Fermi level and lowering of MWCNT work function. At the next qualitative stage, the acceptor fullerene layer becomes n-doped by electron injection from MWCNT while ions of IL penetrate into fullerene. At this step the internal built-in field is created within OPV, which helps exciton dissociation and charge separation/transport, increasing further the Jsc and the FF (Fill factor). Overall power conversion efficiency (PCE) increases nearly 50 times in CuPc/fullerene OPV with MWCNT cathode. The concept of ionically gated MWCNT-ETL interface is numerically simulated by the drift-diffusion model which allows to fit the observed I-V curves. △ Less

Submitted 16 September, 2020; v1 submitted 28 May, 2018; originally announced May 2018.

Comments: 34 pages, 14 figures