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Weak dispersion of exciton Landé factor with band gap energy in lead halide perovskites: Approximate compensation of the electron and hole dependences
Authors:
N. E. Kopteva,
D. R. Yakovlev,
E. Kirstein,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
D. N. Dirin,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
S. A. Crooker,
M. Bayer
Abstract:
The photovoltaic and optoelectronic properties of lead halide perovskite semiconductors are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor g_X is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron and hole carrier g-factors provide information on the band…
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The photovoltaic and optoelectronic properties of lead halide perovskite semiconductors are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor g_X is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron and hole carrier g-factors provide information on the band structure, including its anisotropy, and the parameters contributing to the electron and hole effective masses. We measure g_X by reflectivity in magnetic fields up to 60 T for lead halide perovskite crystals. The materials band gap energies at a liquid helium temperature vary widely across the visible spectral range from 1.520 up to 3.213 eV in hybrid organic-inorganic and fully inorganic perovskites with different cations and halogens: FA_{0.9}Cs_{0.1}PbI_{2.8}Br_{0.2], MAPbI_{3}, FAPbBr_{3}, CsPbBr_{3}, and MAPb(Br_{0.05}Cl_{0.95})_{3}. We find the exciton g-factors to be nearly constant, ranging from +2.3 to +2.7. Thus, the strong dependences of the electron and hole g-factors on the band gap roughly compensate each other when combining to the exciton g-factor. The same is true for the anisotropies of the carrier g-factors, resulting in a nearly isotropic exciton g-factor. The experimental data are compared favorably with model calculation results.
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Submitted 30 January, 2023;
originally announced January 2023.
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Optical alignment and orientation of excitons in ensemble of core/shell CdSe/CdS colloidal nanoplatelets
Authors:
O. O. Smirnova,
I. V. Kalitukha,
A. V. Rodina,
G. S. Dimitriev,
V. F. Sapega,
O. S. Ken,
V. L. Korenev,
N. V. Kozyrev,
S. V. Nekrasov,
Yu. G. Kusrayev,
D. R. Yakovlev,
B. Dubertret,
M. Bayer
Abstract:
We report on the experimental and theoretical studies of optical alignment and optical orientation effects in an ensemble of core/shell CdSe/CdS colloidal nanoplatelets. The dependences of three Stokes parameters on the magnetic field applied in the Faraday geometry are measured under continuous wave resonant excitation of the exciton photoluminescence. Theoretical model is developed to take into…
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We report on the experimental and theoretical studies of optical alignment and optical orientation effects in an ensemble of core/shell CdSe/CdS colloidal nanoplatelets. The dependences of three Stokes parameters on the magnetic field applied in the Faraday geometry are measured under continuous wave resonant excitation of the exciton photoluminescence. Theoretical model is developed to take into account both bright and dark exciton states in the case of strong electron and hole exchange interaction and random in-plane orientation of the nanoplatelets in ensemble. The data analysis allows us to estimate the time and energy parameters of the bright and dark excitons. The optical alignment effect enables identification of the exciton and trion contributions to the photoluminescence spectrum even in the absence of a clear spectral line resolution.
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Submitted 12 December, 2022;
originally announced December 2022.
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The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
Authors:
E. Kirstein,
D. R. Yakovlev,
M. M. Glazov,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
G. S. Dimitriev,
M. A. Semina,
M. O. Nestoklon,
E. L. Ivchenko,
N. E. Kopteva,
D. N. Dirin,
O. Nazarenko,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
M. Bayer
Abstract:
The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)…
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The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.
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Submitted 31 December, 2021;
originally announced December 2021.
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Spin relaxation in diluted magnetic semiconductors. GaMnAs as example
Authors:
I. V. Krainov,
V. F. Sapega,
G. S. Dimitriev,
N. S. Averkiev
Abstract:
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The developed theory assumes that main channel of spin relaxation is mobile carriers providing indirect interactions between magnetic impurities. Our theoretical model is s…
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We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The developed theory assumes that main channel of spin relaxation is mobile carriers providing indirect interactions between magnetic impurities. Our theoretical model is supported by experimental measurements of manganese spin relaxation time in GaMnAs by means of spin-flip Raman scattering. It is found that with temperature increase spin relaxation rate of ferromagnetic samples increases and tends to that measured in paramagnetic sample.
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Submitted 1 April, 2021;
originally announced April 2021.
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Polarized emission of CdSe nanocrystals in magnetic field: the role of phonon-assisted recombination of the dark exciton
Authors:
Gang Qiang,
Aleksandr A. Golovatenko,
Elena V. Shornikova,
Dmitri R. Yakovlev,
Anna V. Rodina,
Evgeny A. Zhukov,
Ina V. Kalitukha,
Victor F. Sapega,
Vadim K. Kaibyshev,
Mikhail A. Prosnikov,
Peter C. M. Christianen,
Aleksei A. Onushchenko,
Manfred Bayer
Abstract:
The recombination dynamics and spin polarization of excitons in CdSe nanocrystals synthesized in a glass matrix are investigated using polarized photoluminescence in high magnetic fields up to 30 Tesla. The dynamics are accelerated by increasing temperature and magnetic field, confirming the dark exciton nature of the low-temperature photoluminescence (PL). The circularly polarized PL in magnetic…
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The recombination dynamics and spin polarization of excitons in CdSe nanocrystals synthesized in a glass matrix are investigated using polarized photoluminescence in high magnetic fields up to 30 Tesla. The dynamics are accelerated by increasing temperature and magnetic field, confirming the dark exciton nature of the low-temperature photoluminescence (PL). The circularly polarized PL in magnetic fields reveals several unusual appearances: (i) a spectral dependence of the polarization degree, (ii) its low saturation value, and (iii) a stronger intensity of the Zeeman component which is higher in energy. The latter feature is the most surprising being in contradiction with the thermal population of the exciton spin sublevels. The same contradiction was previously observed in the ensemble of wet-chemically synthesized CdSe nanocrystals, but was not understood. We present a theory which explains all the observed features and shows that the inverted ordering of the circular polarized PL maxima from the ensemble of nanocrystals is a result of competition between the zero phonon (ZPL) and one optical phonon (1PL) assisted emission of the dark excitons. The essential aspects of the theoretical model are different polarization properties of the dark exciton emission via ZPL and 1PL recombination channels and the inhomogeneous broadening of the PL spectrum from the ensemble of nanocrystals exceeding the optical phonon energy.
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Submitted 5 November, 2020;
originally announced November 2020.
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Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets
Authors:
E. V. Shornikova,
D. R. Yakovlev,
D. O. Tolmachev,
V. Yu. Ivanov,
I. V. Kalitukha,
V. F. Sapega,
D. Kudlacik,
Yu. G. Kusrayev,
A. A. Golovatenko,
S. Shendre,
S. Delikanli,
H. V. Demir,
M. Bayer
Abstract:
Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconduc…
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Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconductor layers. The inclusion of the magnetic Mn$^{2+}$ ions is evidenced by three magneto-optical techniques using high magnetic fields up to 15 T: polarized photoluminescence, optically detected magnetic resonance, and spin-flip Raman scattering. In particular, information on the Mn$^{2+}$ concentration in the CdS shell layers can be obtained from the spin-lattice relaxation dynamics of the Mn$^{2+}$ spin system.
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Submitted 13 May, 2020;
originally announced May 2020.
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Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure
Authors:
O. S. Ken,
E. A. Zhukov,
I. A. Akimov,
V. L. Korenev,
N. E. Kopteva,
I. V. Kalitukha,
V. F. Sapega,
A. D. Wieck,
A. Ludwig,
R. Schott,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the…
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The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.
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Submitted 18 March, 2020;
originally announced March 2020.
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Single and double electron spin-flip Raman scattering in CdSe colloidal nanoplatelets
Authors:
Dennis Kudlacik,
Victor F. Sapega,
Dmitri R. Yakovlev,
Ina V. Kalitukha,
Elena V. Shornikova,
Anna V. Rodina,
Eugeniius L. Ivchenko,
Grigorii S. Dimitriev,
Michel Nasilowski,
Benoit Dubertret,
Manfred Bayer
Abstract:
CdSe colloidal nanoplatelets are studied by spin-flip Raman scattering in magnetic fields up to 5 T. We find pronounced Raman lines shifted from the excitation laser energy by an electron Zeeman splitting. Their polarization selection rules correspond to those expected for scattering mediated by excitons interacting with resident electrons. Surprisingly, Raman signals shifted by twice the electron…
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CdSe colloidal nanoplatelets are studied by spin-flip Raman scattering in magnetic fields up to 5 T. We find pronounced Raman lines shifted from the excitation laser energy by an electron Zeeman splitting. Their polarization selection rules correspond to those expected for scattering mediated by excitons interacting with resident electrons. Surprisingly, Raman signals shifted by twice the electron Zeeman splitting are also observed. The theoretical analysis and experimental dependencies show that the mechanism responsible for the double flip involves two resident electrons interacting with a photoexcited exciton. Effects related to various orientations of the nanoplatelets in the ensemble and different orientations of the magnetic field are analyzed.
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Submitted 5 November, 2019;
originally announced November 2019.
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Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure
Authors:
V. L. Korenev,
I. V. Kalitukha,
I. A. Akimov,
V. F. Sapega,
E. A. Zhukov,
E. Kirstein,
O. S. Ken,
D. Kudlacik,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
N. D. Ilyinskaya,
N. M. Lebedeva,
T. A. Komissarova,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive c…
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Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1 V bias across the heterostructure. The mechanism of this electric field control is essentially different from the conventional concept, in which wavefunctions are spatially redistributed to vary the exchange interaction, requiring high field strengths. Here we address instead control of the novel exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet, i.e. the phononic ac Stark effect. An essential parameter of this coupling is the splitting between heavy and light hole states in the quantum well which can be varied by the electric field induced band bending. Thereby the splitting can be tuned with respect to the magnon-phonon resonance energy in the ferromagnet, leading to maximum coupling for flat band conditions. Our results demonstrate the feasibility of electrically controlled exchange coupling in hybrid semiconductor nanostructures at quite moderate electric field strengths.
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Submitted 23 December, 2018;
originally announced December 2018.
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Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals
Authors:
M. O. Nestoklon,
S. V. Goupalov,
R. I. Dzhioev,
O. S. Ken,
V. L. Korenev,
Yu. G. Kusrayev,
V. F. Sapega,
C. de Weerd,
L. Gomez,
T. Gregorkiewicz,
Junhao Lin,
Kazutomo Suenaga,
Yasufumi Fujiwara,
L. B. Matyushkin,
I. N. Yassievich
Abstract:
We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. From the experimental data at low temperature (2K), we obtain the average value of anisotropic splitting of bright exciton states of the order of 120μeV.…
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We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. From the experimental data at low temperature (2K), we obtain the average value of anisotropic splitting of bright exciton states of the order of 120μeV. Our calculations demonstrate that there is a significant contribution to the splitting due to the nanocrystal shape anisotropy for all inorganic perovskite nanocrystrals.
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Submitted 2 February, 2018;
originally announced February 2018.
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Routing the emission of a near-surface light source by a magnetic field
Authors:
F. Spitzer,
A. N. Poddubny,
I. A. Akimov,
V. F. Sapega,
L. Klompmaker,
L. E. Kreilkamp,
L. V. Litvin,
R. Jede,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
D. R. Yakovlev,
M. Bayer
Abstract:
Magneto-optical phenomena such as the Faraday and Kerr effects play a decisive role for establishing control over polarization and intensity of optical fields propagating through a medium. Intensity effects where the direction of light emission depends on the orientation of the external magnetic field are of particular interest as they can be used for routing the light. We report on a new class of…
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Magneto-optical phenomena such as the Faraday and Kerr effects play a decisive role for establishing control over polarization and intensity of optical fields propagating through a medium. Intensity effects where the direction of light emission depends on the orientation of the external magnetic field are of particular interest as they can be used for routing the light. We report on a new class of transverse emission phenomena for light sources located in the vicinity of a surface, where directionality is established perpendicularly to the externally applied magnetic field. We demonstrate the routing of emission for excitons in a diluted-magnetic-semiconductor quantum well. The directionality is significantly enhanced in hybrid plasmonic semiconductor structures due to the generation of plasmonic spin fluxes at the metal-semiconductor interface.
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Submitted 15 December, 2017;
originally announced December 2017.
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Electron and hole g-factors and spin dynamics of negatively charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells
Authors:
Elena V. Shornikova,
Louis Biadala,
Dmitri R. Yakovlev,
Donghai H. Feng,
Victor F. Sapega,
Nathan Flipo,
Aleksandr A. Golovatenko,
Marina A. Semina,
Anna V. Rodina,
Anatolie A. Mitioglu,
Mariana V. Ballottin,
Peter C. M. Christianen,
Yuri G. Kusrayev,
Michel Nasilowski,
Benoit Dubertret,
Manfred Bayer
Abstract:
We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively…
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We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively charged so that their photoluminescence is dominated by radiative recombination of negatively charged excitons (trions). Electron g-factor of 1.68 is measured and heavy-hole g-factor varying with increasing magnetic field from -0.4 to -0.7 is evaluated. Hole g-factors for two-dimensional structures are calculated for various hole confining potentials for cubic- and wurtzite lattice in CdSe core. These calculations are extended for various quantum dots and nanoplatelets based on II-VI semiconductors. We developed a magneto-optical technique for the quantitative evaluation of the nanoplatelets orientation in ensemble.
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Submitted 2 October, 2017;
originally announced October 2017.
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Addressing the exciton fine structure in colloidal nanocrystals: the case of CdSe nanoplatelets
Authors:
Elena V. Shornikova,
Louis Biadala,
Dmitri R. Yakovlev,
Victor F. Sapega,
Yuri G. Kusrayev,
Anatolie A. Mitioglu,
Mariana V. Ballottin,
Peter C. M. Christianen,
Vasilii V. Belykh,
Mikhail V. Kochiev,
Nikolai N. Sibeldin,
Aleksandr A. Golovatenko,
Anna V. Rodina,
Nikolay A. Gippius,
Alexis Kuntzmann,
Ye Jiang,
Michel Nasilowski,
Benoit Dubertret,
Manfred Bayer
Abstract:
We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at various temperatures down to 2 K. We demonstrate that all these methods provide consistent splitting values and discuss their advances and limitations. Colloidal CdS…
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We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at various temperatures down to 2 K. We demonstrate that all these methods provide consistent splitting values and discuss their advances and limitations. Colloidal CdSe nanoplatelets with thicknesses of 3, 4 and 5 monolayers are chosen for experimental demonstrations. The bright-dark splitting of excitons varies from 3.2 to 6.0 meV and is inversely proportional to the nanoplatelet thickness. Good agreement between experimental and theoretically calculated size dependence of the bright-dark exciton slitting is achieved. The recombination rates of the bright and dark excitons and the bright to dark relaxation rate are measured by time-resolved techniques.
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Submitted 28 September, 2017; v1 submitted 27 September, 2017;
originally announced September 2017.
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Long-range p-d exchange interaction in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure
Authors:
I. A. Akimov,
M. Salewski,
I. V. Kalitukha,
S. V. Poltavtsev,
J. Debus,
D. Kudlacik,
V. F. Sapega,
N. E. Kopteva,
E. Kirstein,
E. A. Zhukov,
D. R. Yakovlev,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
V. L. Korenev,
Yu. G. Kusrayev,
M. Bayer
Abstract:
The exchange interaction between magnetic ions and charge carriers in semiconductors is considered as prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range $p-d$ exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10~nm thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier…
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The exchange interaction between magnetic ions and charge carriers in semiconductors is considered as prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range $p-d$ exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10~nm thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10~nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift $Δ_S$ on the external magnetic field $B$. We show that in strong magnetic field $Δ_S$ is a linear function of $B$ with an offset of $Δ_{pd} = 50-100~μ$eV at zero field from the FM induced effective exchange field. On the other hand, the $s-d$ exchange interaction between conduction band electrons and FM, as well as the $p-d$ contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.
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Submitted 17 August, 2017;
originally announced August 2017.
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Inversion of Zeeman splitting of exciton states in InGaAs quantum wells
Authors:
P. S. Grigoryev,
O. A. Yugov,
S. A. Eliseev,
Yu. P. Efimov,
V. A. Lovtcius,
V. V. Petrov,
V. F. Sapega,
I. V. Ignatiev
Abstract:
Zeeman splitting of quantum-confined states of excitons in InGaAs quantum wells (QWs) is experimentally found to depend strongly on quantization energy. Moreover, it changes sign when the quantization energy increases with a decrease in the QW width. In the 87-nm QW, the sign change is observed for the excited quantum-confined states, which are above the ground state only by a few meV. A two-step…
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Zeeman splitting of quantum-confined states of excitons in InGaAs quantum wells (QWs) is experimentally found to depend strongly on quantization energy. Moreover, it changes sign when the quantization energy increases with a decrease in the QW width. In the 87-nm QW, the sign change is observed for the excited quantum-confined states, which are above the ground state only by a few meV. A two-step approach for the numerical solution of the two-particle Schroedinger equation, taking into account the Coulomb interaction and valence-band coupling, is used for a theoretical justification of the observed phenomenon. The calculated variation of the g-factor convincingly follows the dependencies obtained in the experiments.
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Submitted 16 August, 2016;
originally announced August 2016.
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Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well
Authors:
A. V. Koudinov,
R. I. Dzhioev,
V. L. Korenev,
V. F. Sapega,
Yu. G. Kusrayev
Abstract:
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau…
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The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau levels and mixing of the heavy- and light-hole subbands. After subtraction of these effects, the observed influence of magnetic fields on the spin polarization can be well interpreted by a standard approach of the optical orientation method. The spin relaxation of holes is controlled by the Dyakonov-Perel' mechanism. Deceleration of the spin relaxation by the magnetic field occurs through the Ivchenko mechanism - due to the cyclotron motion of holes. Mobility of holes was found to be two orders of magnitude smaller than that of electrons, being determined by the scattering of holes upon the electron gas.
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Submitted 18 December, 2015;
originally announced December 2015.
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Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure
Authors:
V. L. Korenev,
M. Salewski,
I. A. Akimov,
V. F. Sapega,
L. Langer,
I. V. Kalitukha,
J. Debus,
R. I. Dzhioev,
D. R. Yakovlev,
D. Mueller,
C. Schroeder,
H. Hoevel,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
Yu. G. Kusrayev,
M. Bayer
Abstract:
Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be impl…
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Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wave function overlap and is therefore short-ranged, so that it may be compromised across the interface. Here we study a hybrid structure consisting of a ferromagnetic Co-layer and a semiconducting CdTe quantum well, separated by a thin (Cd,Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wave function overlap of quantum well holes and magnetic Co atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 10 nm. We suggest that the resulting spin polarization of the holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.
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Submitted 18 March, 2015;
originally announced March 2015.
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Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots
Authors:
J. Debus,
T. S. Shamirzaev,
D. Dunker,
V. F. Sapega,
E. L. Ivchenko,
D. R. Yakovlev,
A. I. Toropov,
M. Bayer
Abstract:
The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for st…
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The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $Γ$-X-valley mixing, as evidenced by both experiment and theory.
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Submitted 9 June, 2014;
originally announced June 2014.
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Phase diagrams of magnetopolariton gases
Authors:
V. P. Kochereshko,
M. V. Durnev,
L. Besombes,
H. Mariette,
V. F. Sapega,
A. Axitopoulos,
I. G. Savenko,
T. C. H. Liew,
I. A. Shelykh,
A. V. Platonov,
S. I. Tsintzos,
Z. Hatzopoulos,
P. Lagoudakis,
P. G. Savvidis,
C. Schneider,
M. Amthor,
C. Metzger,
M. Kamp,
S. Hoefling,
A. Kavokin
Abstract:
The magnetic field effect on phase transitions in electrically neutral bosonic systems is much less studied than those in fermionic systems, such as superconducting or ferromagnetic phase transitions. Nevertheless, composite bosons are strongly sensitive to magnetic fields: both their internal structure and motion as whole particles may be affected. A joint effort of ten laboratories has been focu…
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The magnetic field effect on phase transitions in electrically neutral bosonic systems is much less studied than those in fermionic systems, such as superconducting or ferromagnetic phase transitions. Nevertheless, composite bosons are strongly sensitive to magnetic fields: both their internal structure and motion as whole particles may be affected. A joint effort of ten laboratories has been focused on studies of polariton lasers, where non-equilibrium Bose-Einstein condensates of bosonic quasiparticles, exciton-polaritons, may appear or disappear under an effect of applied magnetic fields. Polariton lasers based on pillar or planar microcavities were excited both optically and electrically. In all cases a pronounced dependence of the onset to lasing on the magnetic field has been observed. For the sake of comparison, photon lasing (lasing by an electron-hole plasma) in the presence of a magnetic field has been studied on the same samples as polariton lasing. The threshold to photon lasing is essentially governed by the excitonic Mott transition which appears to be sensitive to magnetic fields too. All the observed experimental features are qualitatively described within a uniform model based on coupled diffusion equations for electrons, holes and excitons and the Gross-Pitaevskii equation for exciton-polariton condensates. Our research sheds more light on the physics of non-equilibrium Bose-Einstein condensates and the results manifest high potentiality of polariton lasers for spin-based quantum logic applications.
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Submitted 26 September, 2013;
originally announced September 2013.
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Spin-flip Raman scattering of the neutral and charged excitons confined in a CdTe/(Cd,Mg)Te quantum well
Authors:
J. Debus,
D. Dunker,
V. F. Sapega,
D. R. Yakovlev,
G. Karczewski,
T. Wojtowicz,
J. Kossut,
M. Bayer
Abstract:
Spin-flip Raman scattering of electrons and heavy-holes is studied for resonant excitation of neutral and charged excitons in a CdTe/Cd$_{0.63}$Mg$_{0.37}$Te quantum well. The spin-flip scattering is characterized by its dependence on the incident and scattered light polarization as well as on the magnetic field strength and orientation. Model schemes of electric-dipole allowed spin-flip Raman pro…
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Spin-flip Raman scattering of electrons and heavy-holes is studied for resonant excitation of neutral and charged excitons in a CdTe/Cd$_{0.63}$Mg$_{0.37}$Te quantum well. The spin-flip scattering is characterized by its dependence on the incident and scattered light polarization as well as on the magnetic field strength and orientation. Model schemes of electric-dipole allowed spin-flip Raman processes in the exciton complexes are compared to the experimental observations, from which we find that lowering of the exciton symmetry, time of carrier spin relaxation, and mixing between electron states and, respectively, light- and heavy-hole states play an essential role in the scattering. At the exciton resonance, anisotropic exchange interaction induces heavy-hole spin-flip scattering, while acoustic phonon interaction is mainly responsible for the electron spin-flip. In resonance with the positively and negatively charged excitons, anisotropic electron-hole exchange as well as mixed electron states allow spin-flip scattering. Variations in the resonant excitation energy and lattice temperature demonstrate that localization of resident electrons and holes controls the Raman process probability and is also responsible for symmetry reduction. We show that the intensity of the electron spin-flip scattering is strongly affected by the lifetime of the exciton complex and in tilted magnetic fields by the angular dependence of the anisotropic electron-hole exchange interaction.
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Submitted 16 March, 2013; v1 submitted 14 January, 2013;
originally announced January 2013.
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Selective spin wave excitation in ferromagnetic (Ga,Mn)As layers by picosecond strain pulses
Authors:
M. Bombeck,
A. S. Salasyuk,
B. A. Glavin,
A. V. Scherbakov,
C. Brüggemann,
D. R. Yakovlev,
V. F. Sapega,
X. Liu,
J. K. Furdyna,
A. V. Akimov,
M. Bayer
Abstract:
We demonstrate selective excitation of a spin wave mode in a ferromagnetic (Ga,Mn)As film by picosecond strain pulses. For a certain range of magnetic fields applied in the layer plane only a single frequency is detected for the magnetization precession. We explain this selectivity of spin mode excitation by the necessity of spatial matching of magnon and phonon eigenfunctions, which represents a…
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We demonstrate selective excitation of a spin wave mode in a ferromagnetic (Ga,Mn)As film by picosecond strain pulses. For a certain range of magnetic fields applied in the layer plane only a single frequency is detected for the magnetization precession. We explain this selectivity of spin mode excitation by the necessity of spatial matching of magnon and phonon eigenfunctions, which represents a selection rule analogous to momentum conservation for magnon-phonon interaction in bulk ferromagnetic materials.
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Submitted 14 December, 2011;
originally announced December 2011.
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Optical orientation of Mn^2+ ions in GaAs
Authors:
I. A. Akimov,
R. I. Dzhioev,
V. L. Korenev,
Yu. G. Kusrayev,
V. F. Sapega,
D. R. Yakovlev,
M. Bayer
Abstract:
We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The dynamical polarization of Mn^2+ occurs due to s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence uncovers n…
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We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The dynamical polarization of Mn^2+ occurs due to s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence uncovers nontrivial electron spin dynamics where the oriented Mn^2+ ions tend to stabilize the electron spin.
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Submitted 7 October, 2010;
originally announced October 2010.
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Coherent magnetization precession in ferromagnetic (Ga,Mn)As induced by picosecond acoustic pulses
Authors:
A. V. Scherbakov,
A. S. Salasyuk,
A. V. Akimov,
X. Liu,
M. Bombeck,
C. Brüggemann,
D. R. Yakovlev,
V. F. Sapega,
J. K. Furdyna,
M. Bayer
Abstract:
We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magneto-crystalline anisotropy induced by t…
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We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magneto-crystalline anisotropy induced by the pulse. A model where only one anisotropy constant is affected by the strain pulse provides a good description of the observed time-dependent response.
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Submitted 21 June, 2010;
originally announced June 2010.
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Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well
Authors:
R. I. Dzhioev,
V. L. Korenev,
M. V. Lazarev,
V. F. Sapega,
D. Gammon,
A. S. Bracker
Abstract:
We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons with…
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We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trap** of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.
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Submitted 14 September, 2006;
originally announced September 2006.
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Large spin splitting of GaN electronic states induced by Gd do**
Authors:
V. F. Sapega,
M. Ramsteiner,
S. Dhar,
O. Brandt,
K. H. Ploog
Abstract:
We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong influence of Gd do** on the electronic states in the GaN matrix. We observe that the spin splitting of the valence band reverses its sign for Gd concentrations as low as 1.6 x 10^{16} cm^{-3}. This re…
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We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong influence of Gd do** on the electronic states in the GaN matrix. We observe that the spin splitting of the valence band reverses its sign for Gd concentrations as low as 1.6 x 10^{16} cm^{-3}. This remarkable result can be understood only in terms of a long range induction of magnetic moments in the surrounding GaN matrix by the Gd ions.
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Submitted 8 September, 2005;
originally announced September 2005.
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GaN:Gd: A superdilute ferromagnetic semiconductor with a Curie temperature above 300 K
Authors:
S. Dhar,
O. Brandt,
M. Ramsteiner,
V. F. Sapega,
K. H. Ploog
Abstract:
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 \mub as compared to its atomic moment of 8 \mub. The long-range spin-polarization of the GaN…
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We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 \mub as compared to its atomic moment of 8 \mub. The long-range spin-polarization of the GaN matrix by Gd is also reflected in the circular polarization of magneto-photoluminescence measurements. Moreover, the materials system is found to be ferromagnetic above room temperature in the entire concentration range under investigation (7$\times10^{15}$ to 2$\times10^{19}$ cm$^{-3}$). We propose a phenomenological model to understand the macroscopic magnetic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd.
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Submitted 19 January, 2005; v1 submitted 21 December, 2004;
originally announced December 2004.
